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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SSM6N15AFU,LF | 0.3500 |  |
39 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SSM6N15 | MOSFET (Metal Oxide) | 300mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 30V | 100mA | 3.6Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 13.5pF @ 3V | Logic Level Gate | |||||||||||||||||||||||
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TK46E08N1,S1X | 1.2400 | |
6212 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK46E08 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 80 V | 80A (Tc) | 10V | 8.4mOhm @ 23A, 10V | 4V @ 500µA | 37 nC @ 10 V | ±20V | 2500 pF @ 40 V | - | 103W (Tc) | |||||||||||||||||||||
|
TK34E10N1,S1X | 1.5900 | |
1876 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK34E10 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 75A (Tc) | 10V | 9.5mOhm @ 17A, 10V | 4V @ 500µA | 38 nC @ 10 V | ±20V | 2600 pF @ 50 V | - | 103W (Tc) | |||||||||||||||||||||
 |
TK10A60W,S4X | 1.6339 | |
3281 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | Through Hole | TO-220-3 Full Pack | TK10A60 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | TK10A60WS4X | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 9.7A (Ta) | 10V | 380mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20 nC @ 10 V | ±30V | 720 pF @ 300 V | - | 30W (Tc) | |||||||||||||||||||||
|
TK22E10N1,S1X | 1.5000 | |
6064 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK22E10 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 52A (Tc) | 10V | 13.8mOhm @ 11A, 10V | 4V @ 300µA | 28 nC @ 10 V | ±20V | 1800 pF @ 50 V | - | 72W (Tc) | |||||||||||||||||||||
 |
CTS05S30,L3F | 0.3400 | |
15 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-882 | CTS05S30 | Schottky | CST2 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 10,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 340 mV @ 100 mA | 150 µA @ 10 V | 125°C (Max) | 500mA | 55pF @ 0V, 1MHz | ||||||||||||||||||||||||||
|
CTS05S40,L3F | 0.3400 | |
62 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-882 | CTS05S40 | Schottky | CST2 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 10,000 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 350 mV @ 100 mA | 30 µA @ 10 V | 125°C (Max) | 500mA | 42pF @ 0V, 1MHz | ||||||||||||||||||||||||||
 |
CUS10S40,H3F | 0.3500 | |
33 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-76, SOD-323 | CUS10S40 | Schottky | USC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 400 mV @ 500 mA | 150 µA @ 40 V | 125°C (Max) | 1A | 120pF @ 0V, 1MHz | ||||||||||||||||||||||||||
 |
CBS10S40,L3F | 0.4300 | |
10 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 2-SMD, No Lead | CBS10S40 | Schottky | CST2B | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 10,000 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 550 mV @ 1 A | 150 µA @ 40 V | 125°C (Max) | 1A | 120pF @ 0V, 1MHz | ||||||||||||||||||||||||||
 |
SSM3J327R,LF | 0.4000 | |
35 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SSM3J327 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 3.9A (Ta) | 1.5V, 4.5V | 93mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | ±8V | 290 pF @ 10 V | - | 1W (Ta) | |||||||||||||||||||||
 |
SSM3K2615R,LF | 0.4600 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SSM3K2615 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 60 V | 2A (Ta) | 3.3V, 10V | 300mOhm @ 1A, 10V | 2V @ 1mA | ±20V | 150 pF @ 10 V | - | 1W (Ta) | ||||||||||||||||||||||
 |
TBAV99,LM | 0.2000 | |
25 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TBAV99 | Standard | SOT-23-3 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 1 Pair Series Connection | 80 V | 100mA | 1.25 V @ 150 mA | 4 ns | 500 nA @ 80 V | 125°C (Max) | |||||||||||||||||||||||||
 |
TMBT3904,LM | 0.1800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TMBT3904 | 320 mW | SOT-23-3 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 150 mA | 100nA (ICBO) | NPN | 300mV @ 5mA, 50mA | 100 @ 10mA, 1V | 300MHz | |||||||||||||||||||||||||
 |
DSF01S30SL,L3F | 0.3500 | |
62 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 2-SMD, No Lead | DSF01S30 | Schottky | SL2 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 10,000 | Small Signal =< 200mA (Io), Any Speed | 30 V | 500 mV @ 100 mA | 50 µA @ 30 V | 125°C (Max) | 100mA | 9.02pF @ 2V, 1MHz | ||||||||||||||||||||||||||
 |
TK14G65W,RQ | 2.4800 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TK14G65 | MOSFET (Metal Oxide) | D2PAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 650 V | 13.7A (Ta) | 10V | 250mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35 nC @ 10 V | ±30V | 1300 pF @ 300 V | - | 130W (Tc) | |||||||||||||||||||||
|
TK14G65W5,RQ | 1.5362 | |
7882 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TK14G65 | MOSFET (Metal Oxide) | D2PAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 650 V | 13.7A (Ta) | 10V | 300mOhm @ 6.9A, 10V | 4.5V @ 690µA | 40 nC @ 10 V | ±30V | 1300 pF @ 300 V | - | 130W (Tc) | |||||||||||||||||||||
|
TK25E60X,S1X | 4.4100 | |
13 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK25E60 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 25A (Ta) | 10V | 125mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 180W (Tc) | |||||||||||||||||||||
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TK28N65W,S1F | 6.3000 | |
30 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-247-3 | TK28N65 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 27.6A (Ta) | 10V | 110mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 75 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | |||||||||||||||||||||
 |
TK25A60X5,S5X | 4.6100 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK25A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 25A (Ta) | 10V | 140mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 45W (Tc) | |||||||||||||||||||||
|
SSM3J338R,LF | 0.3700 | |
121 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SSM3J338 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 12 V | 6A (Ta) | 1.8V, 8V | 17.6mOhm @ 6A, 8V | 1V @ 1mA | 19.5 nC @ 4.5 V | ±10V | 1400 pF @ 6 V | - | 1W (Ta) | |||||||||||||||||||||
 |
SSM3K72CTC,L3F | 0.3000 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SC-101, SOT-883 | SSM3K72 | MOSFET (Metal Oxide) | CST3C | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | N-Channel | 60 V | 150mA (Ta) | 4.5V, 10V | 3.9Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35 nC @ 4.5 V | ±20V | 17 pF @ 10 V | - | 500mW (Ta) | |||||||||||||||||||||
 |
1SS184S,LF(D | - | |
3056 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 1SS184 | Standard | S-Mini | download | 1 (Unlimited) | 1SS184SLF(D | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 1 Pair Common Cathode | 80 V | 100mA | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | 125°C (Max) | |||||||||||||||||||||||||
 |
TBAS16,LM | 0.2100 | |
30 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-23-3 Flat Leads | TBAS16 | Standard | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Standard Recovery >500ns, > 200mA (Io) | 80 V | - | 215mA | - | ||||||||||||||||||||||||||||
 |
TPW1R306PL,L1Q | 3.0600 | |
10 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerWDFN | TPW1R306 | MOSFET (Metal Oxide) | 8-DSOP Advance | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 260A (Tc) | 4.5V, 10V | 1.29mOhm @ 50A, 10V | 2.5V @ 1mA | 91 nC @ 10 V | ±20V | 8100 pF @ 30 V | - | 960mW (Ta), 170W (Tc) | |||||||||||||||||||||
 |
1SS393,LF | 0.3800 | |
347 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | 1SS393 | Schottky | SC-70 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 40 V | 100mA | 600 mV @ 100 mA | 5 µA @ 40 V | -40°C ~ 100°C | ||||||||||||||||||||||||||
 |
SSM3K56CT,L3F | 0.4600 | |
16 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | 150°C (TA) | Surface Mount | SC-101, SOT-883 | SSM3K56 | MOSFET (Metal Oxide) | CST3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | N-Channel | 20 V | 800mA (Ta) | 1.5V, 4.5V | 235mOhm @ 800mA, 4.5V | 1V @ 1mA | 1 nC @ 4.5 V | ±8V | 55 pF @ 10 V | - | 500mW (Ta) | |||||||||||||||||||||
|
TK10A80W,S4X | 2.8400 | |
4462 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK10A80 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0095 | 50 | N-Channel | 800 V | 9.5A (Ta) | 10V | 550mOhm @ 4.8A, 10V | 4V @ 450µA | 19 nC @ 10 V | ±20V | 1150 pF @ 300 V | - | 40W (Tc) | |||||||||||||||||||||
|
CLS01,LFJFQ(O | - | |
1100 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Surface Mount | L-FLAT™ | CLS01 | Schottky | L-FLAT™ (4x5.5) | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 470 mV @ 10 A | 1 mA @ 30 V | -40°C ~ 125°C | 10A | 530pF @ 10V, 1MHz | |||||||||||||||||||||||||||
|
CLS02(T6L,CANO-O,Q | - | |
4848 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Surface Mount | L-FLAT™ | CLS02 | Schottky | L-FLAT™ (4x5.5) | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 550 mV @ 10 A | 1 mA @ 40 V | -40°C ~ 125°C | 10A | 420pF @ 10V, 1MHz | |||||||||||||||||||||||||||
|
CLS03(TE16R,Q) | - | |
7771 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Surface Mount | L-FLAT™ | CLS03 | Schottky | L-FLAT™ (4x5.5) | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 580 mV @ 10 A | 1 mA @ 60 V | -40°C ~ 125°C | 10A | 345pF @ 10V, 1MHz |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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