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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TPN11006PL,LQ | 0.6400 |  |
18 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPN11006 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 60 V | 26A (Tc) | 4.5V, 10V | 11.4mOhm @ 13A, 10V | 2.5V @ 200µA | 17 nC @ 10 V | ±20V | 1625 pF @ 30 V | - | 610mW (Ta), 61W (Tc) | ||||||||||||||||||||
 |
TK28V65W,LQ | 5.2600 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 4-VSFN Exposed Pad | TK28V65 | MOSFET (Metal Oxide) | 4-DFN-EP (8x8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 650 V | 27.6A (Ta) | 10V | 120mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 75 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 240W (Tc) | |||||||||||||||||||
 |
TK31Z60X,S1F | 12.4300 | |
11 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-247-4 | TK31Z60 | MOSFET (Metal Oxide) | TO-247-4L(T) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 9.4A, 10V | 3.5V @ 1.5mA | 65 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | |||||||||||||||||||
 |
TK20J60W,S1VE | 5.3600 | |
24 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-3P-3, SC-65-3 | TK20J60 | MOSFET (Metal Oxide) | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 600 V | 20A (Ta) | 10V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 48 nC @ 10 V | ±30V | 1680 pF @ 300 V | - | 165W (Tc) | |||||||||||||||||||
 |
TPH3R70APL,L1Q | 1.6400 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPH3R70 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 100 V | 90A (Tc) | 4.5V, 10V | 3.7mOhm @ 45A, 10V | 2.5V @ 1mA | 67 nC @ 10 V | ±20V | 6300 pF @ 50 V | - | 960mW (Ta), 170W (Tc) | ||||||||||||||||||||
|
TPH1R306PL,L1Q | 2.0800 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPH1R306 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 100A (Tc) | 4.5V, 10V | 1.34mOhm @ 50A, 10V | 2.5V @ 1mA | 91 nC @ 10 V | ±20V | 8100 pF @ 30 V | - | 960mW (Ta), 170W (Tc) | ||||||||||||||||||||
 |
TK110E10PL,S1X | 1.3400 | |
78 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-220-3 | TK110E10 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 42A (Tc) | 4.5V, 10V | 10.7mOhm @ 21A, 10V | 2.5V @ 300µA | 33 nC @ 10 V | ±20V | 2040 pF @ 50 V | - | 87W (Tc) | |||||||||||||||||||
|
TPH1500CNH,L1Q | 1.9800 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerVDFN | TPH1500 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 150 V | 38A (Tc) | 10V | 15.4mOhm @ 19A, 10V | 4V @ 1mA | 22 nC @ 10 V | ±20V | 2200 pF @ 75 V | - | 1.6W (Ta), 78W (Tc) | ||||||||||||||||||||
 |
TK10A50W,S5X | 1.9200 | |
144 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK10A50 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 9.7A (Ta) | 10V | 380mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20 nC @ 10 V | ±30V | 700 pF @ 300 V | - | 30W (Tc) | |||||||||||||||||||
 |
TK110A10PL,S4X | 1.0900 | |
328 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-220-3 Full Pack | TK110A10 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 36A (Tc) | 4.5V, 10V | 10.8mOhm @ 18A, 10V | 2.5V @ 300µA | 33 nC @ 10 V | ±20V | 2040 pF @ 50 V | - | 36W (Tc) | |||||||||||||||||||
|
TK28V65W5,LQ | 5.5700 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 4-VSFN Exposed Pad | TK28V65 | MOSFET (Metal Oxide) | 4-DFN-EP (8x8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 650 V | 27.6A (Ta) | 10V | 140mOhm @ 13.8A, 10V | 4.5V @ 1.6mA | 90 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 240W (Tc) | |||||||||||||||||||
|
TK17A65W5,S5X | 3.1400 | |
100 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK17A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 17.3A (Ta) | 10V | 230mOhm @ 8.7A, 10V | 4.5V @ 900µA | 50 nC @ 10 V | ±30V | 1800 pF @ 300 V | - | 45W (Tc) | |||||||||||||||||||
 |
TK60F10N1L,LXGQ | 2.3200 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TK60F10 | MOSFET (Metal Oxide) | TO-220SM(W) | - | 3 (168 Hours) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 100 V | 60A (Ta) | 6V, 10V | 6.11mOhm @ 30A, 10V | 3.5V @ 500µA | 60 nC @ 10 V | ±20V | 4320 pF @ 10 V | - | 205W (Tc) | ||||||||||||||||||||
|
XPH6R30ANB,L1XHQ | 1.8400 | |
9 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-SOIC (0.197", 5.00mm Width) | XPH6R30 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | - | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 100 V | 45A (Ta) | 6V, 10V | 6.3mOhm @ 22.5A, 10V | 3.5V @ 500µA | 52 nC @ 10 V | ±20V | 3240 pF @ 10 V | - | 960mW (Ta), 132W (Tc) | ||||||||||||||||||||
|
TK160F10N1L,LXGQ | 3.7000 | |
4476 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TK160F10 | MOSFET (Metal Oxide) | TO-220SM(W) | - | 3 (168 Hours) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 100 V | 160A (Ta) | 6V, 10V | 2.4mOhm @ 80A, 10V | 3.5V @ 1mA | 122 nC @ 10 V | ±20V | 10100 pF @ 10 V | - | 375W (Tc) | ||||||||||||||||||||
 |
SSM6K518NU,LF | 0.4100 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-WDFN Exposed Pad | SSM6K518 | MOSFET (Metal Oxide) | 6-UDFNB (2x2) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 20 V | 6A (Ta) | 1.5V, 4.5V | 33mOhm @ 4A, 4.5V | 1V @ 1mA | 3.6 nC @ 4.5 V | ±8V | 410 pF @ 10 V | - | 1.25W (Ta) | |||||||||||||||||||
 |
CUHS15S40,H3F | 0.4800 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 2-SMD, Flat Lead | CUHS15 | Schottky | US2H | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 510 mV @ 1.5 A | 200 µA @ 40 V | 150°C (Max) | 1.5A | 170pF @ 0V, 1MHz | ||||||||||||||||||||||||
|
SSM6K516NU,LF | 0.4100 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-WDFN Exposed Pad | SSM6K516 | MOSFET (Metal Oxide) | 6-UDFNB (2x2) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 6A (Ta) | 4.5V, 10V | 46mOhm @ 4A, 10V | 2.5V @ 100µA | 2.5 nC @ 4.5 V | +20V, -12V | 280 pF @ 15 V | - | 1.25W (Ta) | |||||||||||||||||||
 |
RN1101MFV,L3F | 0.0261 | |
9895 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Not For New Designs | Surface Mount | SOT-723 | RN1101 | 150 mW | VESM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 500µA, 5mA | 30 @ 10mA, 5V | 4.7 kOhms | 4.7 kOhms | |||||||||||||||||||||||
 |
2SA1242-Y(Q) | - | |
3646 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | 150°C (TJ) | Surface Mount | TO-251-3 Short Leads, IPak, TO-251AA | 2SA1242 | 1 W | PW-MOLD | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 200 | 20 V | 5 A | 100nA (ICBO) | PNP | 1V @ 100mA, 4A | 160 @ 500mA, 2V | 170MHz | ||||||||||||||||||||||||
|
RN2111MFV,L3F | 0.2000 | |
1153 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN2111 | 150 mW | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 10 kOhms | ||||||||||||||||||||||||
 |
2SD2695(T6CNO,A,F) | - | |
5381 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SD2695 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 60 V | 2 A | 10µA (ICBO) | NPN | 1.5V @ 1mA, 1A | 2000 @ 1A, 2V | 100MHz | ||||||||||||||||||||||||
 |
2SA1931,KEHINQ(M | - | |
8804 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SA1931 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 50 V | 5 A | 1µA (ICBO) | PNP | 400mV @ 200mA, 2A | 100 @ 1A, 1V | 60MHz | ||||||||||||||||||||||||
 |
RN4904FE,LXHF(CT | 0.3800 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4904 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz, 250MHz | 47kOhms | 47kOhms | |||||||||||||||||||||||
|
2SA1020-Y(T6CANOFM | - | |
6361 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1020 | 900 mW | TO-92MOD | download | 1 (Unlimited) | 2SA1020YT6CANOFM | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | |||||||||||||||||||||||
 |
2SA1987-O(Q) | 3.4500 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Active | 150°C (TJ) | Through Hole | TO-3PL | 2SA1987 | 180 W | TO-3P(L) | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0075 | 100 | 230 V | 15 A | 5µA (ICBO) | PNP | 3V @ 800mA, 8A | 80 @ 1A, 5V | 30MHz | |||||||||||||||||||||||
 |
RN2410,LXHF | 0.0645 | |
7556 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN2410 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200 MHz | 4.7 kOhms | ||||||||||||||||||||||||
|
2SB1457(T6DW,F,M) | - | |
5222 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SB1457 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 100 V | 2 A | 10µA (ICBO) | PNP | 1.5V @ 1mA, 1A | 2000 @ 1A, 2V | 50MHz | ||||||||||||||||||||||||
 |
RN1907,LXHF(CT | 0.3600 | |
5768 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN1907 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 10kOhms | 47kOhms | |||||||||||||||||||||||
 |
2SA1955FVATPL3Z | 0.2000 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SC-101, SOT-883 | 2SA1955 | 100 mW | CST3 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 8,000 | 12 V | 400 mA | 100nA (ICBO) | PNP | 250mV @ 10mA, 200mA | 300 @ 10mA, 2V | 130MHz |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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