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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Tolerance | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Speed | FET Type | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Voltage - Zener (Nom) (Vz) | Impedance (Max) (Zzt) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Noise Figure (dB Typ @ f) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2SB1457(T6DW,F,M) | - |  |
5222 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SB1457 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 100 V | 2 A | 10µA (ICBO) | PNP | 1.5V @ 1mA, 1A | 2000 @ 1A, 2V | 50MHz | ||||||||||||||||||||||||||||||||
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RN1105MFV,L3F(CT | 0.1800 | |
38 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN1105 | 150 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 500µA, 5mA | 80 @ 10mA, 5V | 2.2 kOhms | 47 kOhms | ||||||||||||||||||||||||||||||||
 |
TK72A08N1,S4X | 2.2300 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Bulk | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK72A08 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 75 V | 80A (Ta) | 10V | 4.5mOhm @ 40A, 10V | 4V @ 1mA | 175 nC @ 10 V | ±20V | 8200 pF @ 10 V | - | 45W (Tc) | |||||||||||||||||||||||||||
 |
TK12P50W,RQ | 2.0000 | |
6704 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 500 V | 11.5A (Ta) | 10V | 340mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 100W (Tc) | ||||||||||||||||||||||||||||
 |
2SK3700(F) | 2.5200 | |
100 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Active | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | 2SK3700 | MOSFET (Metal Oxide) | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 900 V | 5A (Ta) | 2.5Ohm @ 3A, 10V | 4V @ 1mA | 28 nC @ 10 V | 1150 pF @ 25 V | - | 150W (Tc) | |||||||||||||||||||||||||||||
 |
RN2409,LF | 0.1900 | |
9037 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN2409 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200 MHz | 47 kOhms | 22 kOhms | ||||||||||||||||||||||||||||||
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TPC6107(TE85L,F,M) | - | |
1647 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TPC6107 | MOSFET (Metal Oxide) | VS-6 (2.9x2.8) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 4.5A (Ta) | 2V, 4.5V | 55mOhm @ 2.2A, 4.5V | 1.2V @ 200µA | 9.8 nC @ 5 V | ±12V | 680 pF @ 10 V | - | 700mW (Ta) | ||||||||||||||||||||||||||||
 |
CRS15I30A(TE85L,QM | 0.4500 | |
4972 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-123F | CRS15I30 | Schottky | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 460 mV @ 1.5 A | 60 µA @ 30 V | 150°C (Max) | 1.5A | 50pF @ 10V, 1MHz | ||||||||||||||||||||||||||||||||
|
RN1421TE85LF | 0.4200 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1421 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 800 mA | 500nA | NPN - Pre-Biased | 250mV @ 2mA, 50mA | 60 @ 100mA, 1V | 300 MHz | 1 kOhms | 1 kOhms | ||||||||||||||||||||||||||||||
 |
SSM3K361R,LXHF | 0.6400 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | SOT-23-3 Flat Leads | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 100 V | 3.5A (Ta) | 4.5V, 10V | 69mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2 nC @ 4.5 V | ±20V | 430 pF @ 15 V | - | 1.2W (Ta) | ||||||||||||||||||||||||||||
|
CRZ30(TE85L,Q,M) | 0.4900 | |
9098 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | ±10% | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | CRZ30 | 700 mW | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0050 | 3,000 | 1 V @ 200 mA | 10 µA @ 21 V | 30 V | 30 Ohms | |||||||||||||||||||||||||||||||||
 |
2SC5819(TE12L,ZF) | - | |
4711 | 0.00000000 | Toshiba Semiconductor and Storage | - | Box | Active | 150°C (TJ) | Surface Mount | TO-243AA | 1 W | PW-MINI | download | EAR99 | 8541.29.0095 | 1 | 20 V | 1.5 A | 100nA (ICBO) | NPN | 120mV @ 10mA, 500mA | 400 @ 150mA, 2V | - | ||||||||||||||||||||||||||||||||||
|
2SC5171(ONK,Q,M) | - | |
9307 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SC5171 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 180 V | 2 A | 5µA (ICBO) | NPN | 1V @ 100mA, 1A | 100 @ 100mA, 5V | 200MHz | ||||||||||||||||||||||||||||||||
|
CUS10I40A(TE85L,QM | - | |
1671 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-76, SOD-323 | CUS10I40 | Schottky | US-FLAT (1.25x2.5) | download | RoHS Compliant | CUS10I40A(TE85LQM | EAR99 | 8541.10.0080 | 4,000 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 490 mV @ 700 mA | 60 µA @ 40 V | 150°C (Max) | 1A | 35pF @ 10V, 1MHz | ||||||||||||||||||||||||||||||||
|
XPJR6604PB,LXHQ | 2.7700 | |
1489 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 5-PowerSFN | MOSFET (Metal Oxide) | S-TOGL™ | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 40 V | 200A (Ta) | 6V, 10V | 0.66mOhm @ 100A, 10V | 3V @ 1mA | 128 nC @ 10 V | ±20V | 11380 pF @ 10 V | - | 375W (Tc) | ||||||||||||||||||||||||||||
 |
HN2D02FU,LF | 0.4000 | |
310 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | HN2D02 | Standard | US6 | download | RoHS non-compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 3 Independent | 80 V | 80mA | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | 125°C (Max) | |||||||||||||||||||||||||||||||
 |
RN4904FE,LXHF(CT | 0.3800 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4904 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz, 250MHz | 47kOhms | 47kOhms | |||||||||||||||||||||||||||||||
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2SA1244-Y(Q) | - | |
1152 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | 150°C (TJ) | Surface Mount | TO-251-3 Short Leads, IPak, TO-251AA | 2SA1244 | 1 W | PW-MOLD | - | 1 (Unlimited) | EAR99 | 8541.29.0075 | 200 | 50 V | 5 A | 1µA (ICBO) | PNP | 400mV @ 150mA, 3A | 120 @ 1A, 1V | 60MHz | ||||||||||||||||||||||||||||||||
 |
TRS4A65F,S1Q | 2.3700 | |
24 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-220-2 Full Pack | TRS4A65 | SiC (Silicon Carbide) Schottky | TO-220F-2L | - | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.6 V @ 4 A | 0 ns | 20 µA @ 650 V | 175°C (Max) | 4A | 16pF @ 650V, 1MHz | |||||||||||||||||||||||||||||||||
|
RN2908FE,LXHF(CT | 0.3800 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN2908 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 22kOhms | 47kOhms | |||||||||||||||||||||||||||||||
|
2SD2257(Q,M) | - | |
9334 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SD2257 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1 | 100 V | 3 A | 10µA (ICBO) | NPN | 1.5V @ 1.5mA, 1.5A | 2000 @ 2A, 2V | - | ||||||||||||||||||||||||||||||||
|
2SB1375,CLARIONF(M | - | |
5769 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SB1375 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1 | 60 V | 3 A | 10µA (ICBO) | PNP | 1.5V @ 200mA, 2A | 100 @ 500mA, 5V | 9MHz | ||||||||||||||||||||||||||||||||
 |
2SC5095-R(TE85L,F) | - | |
9694 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SC5095 | 100mW | SC-70 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 13dB ~ 7.5dB | 10V | 15mA | NPN | 50 @ 7mA, 6V | 10GHz | 1.8dB @ 2GHz | |||||||||||||||||||||||||||||||
|
RN1101MFV,L3F | 0.0261 | |
9895 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Not For New Designs | Surface Mount | SOT-723 | RN1101 | 150 mW | VESM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 500µA, 5mA | 30 @ 10mA, 5V | 4.7 kOhms | 4.7 kOhms | |||||||||||||||||||||||||||||||
|
2SA1930,CKQ(J | - | |
9881 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SA1930 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 180 V | 2 A | 5µA (ICBO) | PNP | 1V @ 100mA, 1A | 100 @ 100mA, 5V | 200MHz | ||||||||||||||||||||||||||||||||
 |
RN1968(TE85L,F) | 0.4700 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN1968 | 200mW | US6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 22kOhms | 47kOhms | ||||||||||||||||||||||||||||||
 |
1SS367,H3F | 0.2000 | |
63 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-76, SOD-323 | 1SS367 | Schottky | USC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 10 V | 500 mV @ 100 mA | 20 µA @ 10 V | 125°C (Max) | 100mA | 40pF @ 0V, 1MHz | ||||||||||||||||||||||||||||||||
|
RN2905,LXHF(CT | 0.4400 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2905 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 2.2kOhms | 47kOhms | |||||||||||||||||||||||||||||||
 |
2SC3665-Y(T2NSW,FM | - | |
1068 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | SC-71 | 2SC3665 | 1 W | MSTM | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 120 V | 800 mA | 100nA (ICBO) | NPN | 1V @ 50mA, 500mA | 80 @ 100mA, 5V | 120MHz | ||||||||||||||||||||||||||||||||
 |
TK40E06N1,S1X | 1.0400 | |
9091 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK40E06 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 40A (Ta) | 10V | 10.4mOhm @ 20A, 10V | 4V @ 300µA | 23 nC @ 10 V | ±20V | 1700 pF @ 30 V | - | 67W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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