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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Tolerance | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Voltage - Zener (Nom) (Vz) | Impedance (Max) (Zzt) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Noise Figure (dB Typ @ f) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TJ20S04M3L(T6L1,NQ | 1.3300 |  |
9822 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ20S04 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 40 V | 20A (Ta) | 6V, 10V | 22.2mOhm @ 10A, 10V | 3V @ 1mA | 37 nC @ 10 V | +10V, -20V | 1850 pF @ 10 V | - | 41W (Tc) | |||||||||||||||||||||||||||
 |
TK60F10N1L,LXGQ | 2.3200 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TK60F10 | MOSFET (Metal Oxide) | TO-220SM(W) | - | 3 (168 Hours) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 100 V | 60A (Ta) | 6V, 10V | 6.11mOhm @ 30A, 10V | 3.5V @ 500µA | 60 nC @ 10 V | ±20V | 4320 pF @ 10 V | - | 205W (Tc) | ||||||||||||||||||||||||||||
 |
RN1405,LXHF | 0.3400 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1405 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250 MHz | 2.2 kOhms | 47 kOhms | |||||||||||||||||||||||||||||||
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RN1962TE85LF | - | |
5519 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN1962 | 500mW | US6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250MHz | 10kOhms | 10kOhms | ||||||||||||||||||||||||||||||
 |
2SC4738-GR,LXHF | 0.3300 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | - | Surface Mount | SC-75, SOT-416 | 120 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 150 mA | 100nA (ICBO) | NPN | 250mV @ 10mA, 100mA | 200 @ 2mA, 6V | 80MHz | |||||||||||||||||||||||||||||||||
 |
RN2109,LF(CT | 0.2000 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN2109 | 100 mW | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200 MHz | 47 kOhms | 22 kOhms | ||||||||||||||||||||||||||||||
 |
TPCP8001-H(TE85LFM | - | |
4459 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TPCP8001 | MOSFET (Metal Oxide) | PS-8 (2.9x2.4) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 7.2A (Ta) | 4.5V, 10V | 16mOhm @ 3.6A, 10V | 2.3V @ 1mA | 11 nC @ 10 V | ±20V | 640 pF @ 10 V | - | 1W (Ta), 30W (Tc) | ||||||||||||||||||||||||||||
 |
TPH1400ANH,L1Q | 1.5000 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPH1400 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 100 V | 24A (Tc) | 10V | 13.6mOhm @ 12A, 10V | 4V @ 300µA | 22 nC @ 10 V | ±20V | 1900 pF @ 50 V | - | 1.6W (Ta), 48W (Tc) | |||||||||||||||||||||||||||
 |
2SC4207-GR(TE85L,F | 0.3500 | |
41 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-74A, SOT-753 | 2SC4207 | 300mW | SMV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 150mA | 100nA (ICBO) | 2 NPN (Dual) Common Emitter | 250mV @ 10mA, 100mA | 200 @ 2mA, 6V | 80MHz | |||||||||||||||||||||||||||||||
 |
TP89R103NL,LQ | 0.6600 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | TP89R103 | MOSFET (Metal Oxide) | 8-SOP | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 15A (Tc) | 4.5V, 10V | 9.1mOhm @ 7.5A, 10V | 2.3V @ 100µA | 9.8 nC @ 10 V | ±20V | 820 pF @ 15 V | - | 1W (Tc) | |||||||||||||||||||||||||||
 |
2SC4793,HFEF(M | - | |
4903 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SC4793 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 230 V | 1 A | 1µA (ICBO) | NPN | 1.5V @ 50mA, 500mA | 100 @ 100mA, 5V | 100MHz | ||||||||||||||||||||||||||||||||
 |
TK380P65Y,RQ | 1.7300 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK380P65 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 650 V | 9.7A (Tc) | 10V | 380mOhm @ 4.9A, 10V | 4V @ 360µA | 20 nC @ 10 V | ±30V | 590 pF @ 300 V | - | 80W (Tc) | |||||||||||||||||||||||||||
 |
CRH01(TE85L) | - | |
9197 | 0.00000000 | Toshiba Semiconductor and Storage | - | Cut Tape (CT) | Obsolete | Surface Mount | SOD-123F | CRH01 | Standard | S-FLAT (1.6x3.5) | download | RoHS non-compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | 980 mV @ 1 A | 35 ns | 10 µA @ 200 V | -40°C ~ 150°C | 1A | - | |||||||||||||||||||||||||||||||
 |
2SC5087R(TE85L,F) | 0.1270 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-61AA | 2SC5087 | 150mW | SMQ | - | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | - | 12V | 80mA | NPN | 120 @ 20mA, 10V | 8GHz | 1.1dB ~ 2dB @ 1GHz | |||||||||||||||||||||||||||||||
 |
SSM6N17FU(TE85L,F) | 0.4900 | |
14 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SSM6N17 | MOSFET (Metal Oxide) | 200mW (Ta) | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 50V | 100mA (Ta) | 20Ohm @ 10mA, 4V | 1.5V @ 1µA | - | 7pF @ 3V | - | |||||||||||||||||||||||||||||
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TPCF8402(TE85L,F,M | - | |
3491 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TPCF8402 | MOSFET (Metal Oxide) | 330mW | VS-8 (2.9x1.5) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | N and P-Channel | 30V | 4A, 3.2A | 50mOhm @ 2A, 10V | 2V @ 1mA | 10nC @ 10V | 470pF @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||
 |
RN2103CT(TPL3) | - | |
1846 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-101, SOT-883 | RN2103 | 50 mW | CST3 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 20 V | 50 mA | 500nA | PNP - Pre-Biased | 150mV @ 250µA, 5mA | 100 @ 10mA, 5V | 22 kOhms | 22 kOhms | ||||||||||||||||||||||||||||||||
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TK7A60W5,S5VX | 1.6400 | |
100 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK7A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 7A (Ta) | 10V | 650mOhm @ 3.5A, 10V | 4.5V @ 350µA | 16 nC @ 10 V | ±30V | 490 pF @ 300 V | - | 30W (Tc) | |||||||||||||||||||||||||||
|
RN2106(T5L,F,T) | - | |
3234 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN2106 | 100 mW | SSM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200 MHz | 4.7 kOhms | 47 kOhms | ||||||||||||||||||||||||||||||
 |
RN1966FE(TE85L,F) | 0.3800 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SOT-563, SOT-666 | RN1966 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 4.7kOhms | 47kOhms | |||||||||||||||||||||||||||||||
 |
RN2301,LXHF | 0.3900 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN2301 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 200 MHz | 4.7 kOhms | 4.7 kOhms | |||||||||||||||||||||||||||||||
 |
SSM6J507NU,LF | 0.4600 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | SSM6J507 | MOSFET (Metal Oxide) | 6-UDFNB (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 30 V | 10A (Ta) | 4V, 10V | 20mOhm @ 4A, 10V | 2.2V @ 250µA | 20.4 nC @ 4.5 V | +20V, -25V | 1150 pF @ 15 V | - | 1.25W (Ta) | |||||||||||||||||||||||||||
 |
HN1D02F(TE85L,F) | 0.4700 | |
9292 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74, SOT-457 | HN1D02 | Standard | SM6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 2 Pair Common Cathode | 80 V | 100mA | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | -55°C ~ 125°C | |||||||||||||||||||||||||||||||
|
CRS20I30B(TE85L,QM | 0.4900 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-123F | CRS20I30 | Schottky | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 450 mV @ 2 A | 100 µA @ 30 V | 150°C (Max) | 2A | 82pF @ 10V, 1MHz | ||||||||||||||||||||||||||||||||
|
1SS319(TE85L,F) | 0.4000 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-61AA | 1SS319 | Schottky | SC-61B | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 2 Independent | 40 V | 100mA | 600 mV @ 100 mA | 5 µA @ 40 V | 125°C (Max) | ||||||||||||||||||||||||||||||||
|
TJ40S04M3L,LXHQ | 1.0800 | |
9632 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ40S04 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 40 V | 40A (Ta) | 6V, 10V | 9.1mOhm @ 20A, 10V | 3V @ 1mA | 83 nC @ 10 V | +10V, -20V | 4140 pF @ 10 V | - | 68W (Tc) | ||||||||||||||||||||||||||||
 |
TPCA8009-H(TE12L,Q | - | |
7100 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCA8009 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 150 V | 7A (Ta) | 10V | 350mOhm @ 3.5A, 10V | 4V @ 1mA | 10 nC @ 10 V | ±20V | 600 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | ||||||||||||||||||||||||||||
|
CRZ12(TE85L,Q,M) | 0.4900 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | ±10% | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | CRZ12 | 700 mW | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0050 | 3,000 | 1 V @ 200 mA | 10 µA @ 8 V | 12 V | 30 Ohms | |||||||||||||||||||||||||||||||||
|
RN4984,LF(CT | 0.3500 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4984 | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz, 200MHz | 47kOhms | 47kOhms | ||||||||||||||||||||||||||||||
|
RN2965(TE85L,F) | 0.4800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2965 | 200mW | US6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 2.2kOhms | 47kOhms |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
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15,000 m2
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