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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Test Condition | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Td (on/off) @ 25°C | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
2SC2873-Y(TE12L,ZC | 0.4200 |  |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-243AA | 500 mW | PW-MINI | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1,000 | 50 V | 2 A | 100nA (ICBO) | NPN | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 120MHz | ||||||||||||||||||||||||||||||||
|
TPW2R508NH,L1Q | 2.8100 | |
1661 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerWDFN | MOSFET (Metal Oxide) | 8-DSOP Advance | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 75 V | 150A (Ta) | 10V | 2.5mOhm @ 50A, 10V | 4V @ 1mA | 72 nC @ 10 V | ±20V | 6000 pF @ 37.5 V | - | 800mW (Ta), 142W (Tc) | |||||||||||||||||||||||||||||
 |
TTA1452B,S4X | 1.9800 | |
9235 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2 W | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | 80 V | 12 A | 5µA (ICBO) | PNP | 400mV @ 300mA, 6A | 120 @ 1A, 1V | 50MHz | ||||||||||||||||||||||||||||||||
|
TPH2R805PL,LQ | 1.2000 | |
9118 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 45 V | 100A (Tc) | 4.5V, 10V | 2.8mOhm @ 50A, 10V | 2.4V @ 500µA | 73 nC @ 10 V | ±20V | 5175 pF @ 22.5 V | - | 830mW (Ta), 116W (Tc) | |||||||||||||||||||||||||||||
|
TK25A20D,S5X | 1.7900 | |
40 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 200 V | 25A (Ta) | 10V | 70mOhm @ 12.5A, 10V | 3.5V @ 1mA | 60 nC @ 10 V | ±20V | 2550 pF @ 100 V | - | 45W (Tc) | ||||||||||||||||||||||||||||
|
2SA1943-O(S1,F | 2.9200 | |
20 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C (TJ) | Through Hole | TO-3PL | 150 W | TO-3P(L) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | 230 V | 15 A | 5µA (ICBO) | PNP | 3V @ 800mA, 8A | 80 @ 1A, 5V | 30MHz | ||||||||||||||||||||||||||||||||
 |
2SA2059(TE12L,F) | 0.6300 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-243AA | 1 W | PW-MINI | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | 20 V | 3 A | 100nA (ICBO) | PNP | 190mV @ 53mA, 1.6A | 200 @ 500mA, 2V | - | ||||||||||||||||||||||||||||||||
|
TK22V65X5,LQ | 5.6600 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 4-VSFN Exposed Pad | MOSFET (Metal Oxide) | 4-DFN-EP (8x8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 650 V | 22A (Ta) | 10V | 170mOhm @ 11A, 10V | 4.5V @ 1.1mA | 50 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 180W (Tc) | ||||||||||||||||||||||||||||
|
SSM3K16FS,LF | 0.2300 | |
6974 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | SC-75, SOT-416 | MOSFET (Metal Oxide) | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 100mA (Ta) | 1.5V, 4V | 3Ohm @ 10mA, 4V | 1.1V @ 100µA | ±10V | 9.3 pF @ 3 V | - | 100mW (Ta) | |||||||||||||||||||||||||||||
 |
GT40RR21(STA1,E | 3.6500 | |
1369 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | GT40RR21 | Standard | 230 W | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | 280V, 40A, 10Ohm, 20V | 600 ns | - | 1200 V | 40 A | 200 A | 2.8V @ 15V, 40A | -, 540µJ (off) | - | ||||||||||||||||||||||||||||
|
TK25V60X5,LQ | 5.0300 | |
8257 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C | Surface Mount | 4-VSFN Exposed Pad | MOSFET (Metal Oxide) | 4-DFN-EP (8x8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 600 V | 25A (Ta) | 10V | 150mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 180W (Tc) | ||||||||||||||||||||||||||||
|
TTA008B,Q | 0.6600 | |
250 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tray | Active | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | 1.5 W | TO-126N | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 250 | 80 V | 2 A | 100nA (ICBO) | PNP | 500mV @ 100mA, 1A | 100 @ 500mA, 2V | 100MHz | |||||||||||||||||||||||||||||||||
 |
SSM3J16FU(TE85L,F) | 0.3700 | |
9188 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | SC-70, SOT-323 | MOSFET (Metal Oxide) | USM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 100mA (Ta) | 1.5V, 4V | 8Ohm @ 10mA, 4V | 1.1V @ 100µA | ±10V | 11 pF @ 3 V | - | 150mW (Ta) | |||||||||||||||||||||||||||||
|
CUHS20S60,H3F | 0.3600 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 2-SMD, Flat Lead | Schottky | US2H | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 530 mV @ 2 A | 650 µA @ 60 V | 150°C | 2A | 290pF @ 0V, 1MHz | |||||||||||||||||||||||||||||||||
|
TK62N60W5,S1VF | 11.3800 | |
18 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 600 V | 61.8A (Ta) | 10V | 45mOhm @ 30.9A, 10V | 4.5V @ 3.1mA | 205 nC @ 10 V | ±30V | 6500 pF @ 300 V | - | 400W (Tc) | ||||||||||||||||||||||||||||
|
TK3P80E,RQ | 1.1500 | |
4414 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 800 V | 3A (Ta) | 10V | 4.9Ohm @ 1.5A, 10V | 4V @ 300µA | 12 nC @ 10 V | ±30V | 500 pF @ 25 V | - | 80W (Tc) | ||||||||||||||||||||||||||||
|
HN4B102J(TE85L,F) | 0.6100 | |
6062 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SC-74A, SOT-753 | HN4B102 | 750mW | SMV | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 30V | 1.8A, 2A | 100nA (ICBO) | NPN, PNP | 140mV @ 20mA, 600mA / 200mV @ 20mA, 600mA | 200 @ 200mA, 2V | - | |||||||||||||||||||||||||||||||
|
TPCP8407,LF | 0.7400 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-SMD, Flat Lead | TPCP8407 | MOSFET (Metal Oxide) | 690mW (Ta) | PS-8 | download | ROHS3 Compliant | 1 (Unlimited) | 264-TPCP8407LFCT | EAR99 | 8541.21.0095 | 3,000 | N and P-Channel | 40V | 5A (Ta), 4A (Ta) | 36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V | 3V @ 1mA | 11.8nC @ 10V, 18nC @ 10V | 505pF @ 10V, 810pF @ 10V | - | ||||||||||||||||||||||||||||
|
TK12P50W,RQ | 2.0000 | |
6704 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 500 V | 11.5A (Ta) | 10V | 340mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 100W (Tc) | ||||||||||||||||||||||||||||
 |
TPN1200APL,L1Q | 0.8500 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 100 V | 40A (Tc) | 4.5V, 10V | 11.5mOhm @ 20A, 10V | 2.5V @ 300µA | 24 nC @ 10 V | ±20V | 1855 pF @ 50 V | - | 630mW (Ta), 104W (Tc) | ||||||||||||||||||||||||||||
|
TK14V65W,LQ | 3.4800 | |
2719 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C | Surface Mount | 4-VSFN Exposed Pad | MOSFET (Metal Oxide) | 4-DFN-EP (8x8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 650 V | 13.7A (Ta) | 10V | 280mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35 nC @ 10 V | ±30V | 1300 pF @ 300 V | - | 139W (Tc) | ||||||||||||||||||||||||||||
|
TPCC8105,L1Q | 0.8200 | |
3350 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-VDFN Exposed Pad | MOSFET (Metal Oxide) | 8-TSON Advance (3.3x3.3) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | P-Channel | 30 V | 23A (Ta) | 4.5V, 10V | 7.8mOhm @ 11.5A, 10V | 2V @ 500µA | 76 nC @ 10 V | +20V, -25V | 3240 pF @ 10 V | - | 700mW (Ta), 30W (Tc) | |||||||||||||||||||||||||||||
 |
2SC5200-O(S1,F | 3.0100 | |
21 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C (TJ) | Through Hole | TO-3PL | 150 W | TO-3P(L) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | 230 V | 15 A | 5µA (ICBO) | NPN | 3V @ 800mA, 8A | 55 @ 1A, 5V | 30MHz | ||||||||||||||||||||||||||||||||
|
GT50JR21(STA1,E,S) | 4.7900 | |
6501 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | Standard | 230 W | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | 264-GT50JR21(STA1ES) | EAR99 | 8541.29.0095 | 25 | - | - | 600 V | 50 A | 100 A | 2V @ 15V, 50A | - | - | |||||||||||||||||||||||||||||
|
SSM3J15CT,L3F | 0.3100 | |
9 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | SC-101, SOT-883 | MOSFET (Metal Oxide) | CST3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | P-Channel | 30 V | 100mA (Ta) | 2.5V, 4V | 12Ohm @ 10mA, 4V | 1.7V @ 100µA | ±20V | 9.1 pF @ 3 V | - | 100mW (Ta) | |||||||||||||||||||||||||||||
|
RN2313,LF | 0.1800 | |
4580 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN2313 | 100 mW | SC-70 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200 MHz | 47 kOhms | |||||||||||||||||||||||||||||||
|
TDTC143Z,LM | 0.1800 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TDTC143 | 320 mW | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 500µA, 10mA | 80 @ 10mA, 5V | 250 MHz | 4.7 kOhms | |||||||||||||||||||||||||||||||
|
CUHS20F60,H3F | 0.3600 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 2-SMD, Flat Lead | Schottky | US2H | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 590 mV @ 2 A | 70 µA @ 60 V | 150°C | 2A | 300pF @ 0V, 1MHz | |||||||||||||||||||||||||||||||||
|
TK8A25DA,S4X | 0.9000 | |
40 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 250 V | 7.5A (Ta) | 10V | 500mOhm @ 3.8A, 10V | 3.5V @ 1mA | 16 nC @ 10 V | ±20V | 550 pF @ 100 V | - | 30W (Tc) | ||||||||||||||||||||||||||||
|
TK5P65W,RQ | 1.3700 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | DPAK | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 650 V | 5.2A (Ta) | 10V | 1.22Ohm @ 2.6A, 10V | 3.5V @ 170µA | 10.5 nC @ 10 V | ±30V | 380 pF @ 300 V | - | 60W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
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