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Discrete Semiconductor Products(184)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Mounting Type | Package / Case | Technology | Supplier Device Package | DataSheet | Moisture Sensitivity Level (MSL) | REACH Status | ECCN | HTSUS | Standard Package | Speed | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
G3S12010A | 17.2000 |  |
2786 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 34.8A | 770pF @ 0V, 1MHz | |||
 |
G3S06520P | 11.9400 | |
5761 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 20 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 60A | 1170pF @ 0V, 1MHz | |||
 |
G4S06508CT | 4.6900 | |
1563 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 8 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 24A | 395pF @ 0V, 1MHz | |||
|
G5S06504AT | 3.6600 | |
4724 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.6 V @ 4 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 11.6A | 181pF @ 0V, 1MHz | |||
 |
G4S06515QT | 8.6300 | |
2458 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | 4-PowerTSFN | SiC (Silicon Carbide) Schottky | 4-DFN (8x8) | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 15 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 53A | 645pF @ 0V, 1MHz | |||
 |
G5S12020BM | 21.7500 | |
2082 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | download | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 33A (DC) | 1.7 V @ 10 A | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | ||||
|
G3S17020B | 48.6200 | |
1387 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1700 V | 24A (DC) | 1.7 V @ 10 A | 0 ns | 100 µA @ 1700 V | -55°C ~ 175°C | |||
 |
G5S6506Z | 5.5400 | |
8309 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | 8-PowerTDFN | SiC (Silicon Carbide) Schottky | 8-DFN (4.9x5.75) | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 6 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 30.5A | 395pF @ 0V, 1MHz | |||
 |
G5S06508DT | 5.3200 | |
7962 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiC (Silicon Carbide) Schottky | TO-263 | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 8 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 32A | 550pF @ 0V, 1MHz | |||
|
G5S12015PM | 16.5000 | |
6923 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | download | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 15 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 55A | 1370pF @ 0V, 1MHz | ||||
|
G3S12020P | 25.0100 | |
4068 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 20 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 64.5A | 2600pF @ 0V, 1MHz | |||
|
G4S06530BT | 16.1800 | |
4468 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 39A (DC) | 1.7 V @ 15 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | |||
|
G3S12005A | 7.6200 | |
3236 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 5 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 22A | 475pF @ 0V, 1MHz | |||
|
G5S12008D | 8.0700 | |
8712 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiC (Silicon Carbide) Schottky | TO-263 | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 8 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 26.1A | 550pF @ 0V, 1MHz | |||
|
G4S12020P | 33.5600 | |
3260 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | - | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 20 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 64.5A | 2600pF @ 0V, 1MHz | |||
|
G4S06510PT | 4.8600 | |
7075 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 31.2A | 550pF @ 0V, 1MHz | |||
|
G3S12010P | 13.9300 | |
3811 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 110 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 37A | 765pF @ 0V, 1MHz | |||
|
G4S12020PM | 30.5100 | |
4007 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.6 V @ 20 A | 0 ns | 30 µA @ 1700 V | -55°C ~ 175°C | 64.5A | 2600pF @ 0V, 1MHz | |||
|
GAS06520P | 11.1000 | |
4087 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 20 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 66.5A | 1390pF @ 0V, 1MHz | |||
 |
G51XT | 2.1900 | |
1897 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | SOD-123F | SiC (Silicon Carbide) Schottky | SOD-123FL | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.6 V @ 1 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 1.84A | 57.5pF @ 0V, 1MHz | |||
|
G5S12002A | 2.8400 | |
9027 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 2 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 10A | 170pF @ 0V, 1MHz | |||
|
G5S06508AT | 5.3200 | |
9245 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 8 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 30.5A | 550pF @ 0V, 1MHz | |||
|
G3S17010B | 33.3200 | |
2827 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1700 V | 29.5A (DC) | 1.7 V @ 5 A | 0 ns | 50 µA @ 1700 V | -55°C ~ 175°C | |||
|
G4S06510AT | 4.8600 | |
7642 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 30.5A | 550pF @ 0V, 1MHz | |||
 |
G5S12002H | 3.0000 | |
6277 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 2 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 7.5A | 170pF @ 0V, 1MHz | |||
|
G5S12010A | 12.6300 | |
5409 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | download | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 37A | - | |||||
|
G4S06510CT | 4.8600 | |
9621 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 31A | 550pF @ 0V, 1MHz | |||
|
G3S06540B | 30.6100 | |
9682 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 60A (DC) | 1.7 V @ 20 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | |||
|
G4S06515HT | 8.3300 | |
1776 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 15 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 23.8A | 645pF @ 0V, 1MHz | |||
|
G5S12015L | 15.2900 | |
4965 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 15 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 55A | 1370pF @ 0V, 1MHz |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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