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Discrete Semiconductor Products(184)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Mounting Type | Package / Case | Technology | Supplier Device Package | DataSheet | Moisture Sensitivity Level (MSL) | REACH Status | ECCN | HTSUS | Standard Package | Speed | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
G3S06503A | 2.7300 |  |
400 | 0.00000000 | Global Power Technology-GPT | - | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 3 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 11.5A | 181pF @ 0V, 1MHz | |||
 |
G5S06510HT | 5.7300 | |
7291 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 23.8A | - | ||||
 |
G3S06508D | 4.8000 | |
9492 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiC (Silicon Carbide) Schottky | TO-263 | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 8 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 25.5A | 550pF @ 0V, 1MHz | |||
 |
G5S06506CT | 4.8300 | |
2358 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 6 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 24A | 395pF @ 0V, 1MHz | |||
|
G5S12020H | 26.0000 | |
3136 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 20 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 24.6A | 1320pF @ 0V, 1MHz | |||
|
G3S06506C | 4.0700 | |
4536 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 6 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 22.5A | 424pF @ 0V, 1MHz | |||
 |
G3S12010P | 13.9300 | |
3811 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 110 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 37A | 765pF @ 0V, 1MHz | |||
|
G3S12015P | 20.6800 | |
6095 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 15 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 42A | 1379pF @ 0V, 1MHz | |||
 |
G5S12020BM | 21.7500 | |
2082 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | download | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 33A (DC) | 1.7 V @ 10 A | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | ||||
|
G5S06508AT | 5.3200 | |
9245 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 8 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 30.5A | 550pF @ 0V, 1MHz | |||
 |
G3S06508J | 6.2800 | |
4678 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 Isolated Tab | SiC (Silicon Carbide) Schottky | TO-220ISO | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 8 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 23A | 550pF @ 0V, 1MHz | |||
|
G5S06508CT | 5.3200 | |
5536 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 8 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 31A | 550pF @ 0V, 1MHz | |||
|
G3S17005A | 25.7200 | |
1837 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1700 V | 1.7 V @ 5 A | 0 ns | 50 µA @ 1700 V | -55°C ~ 175°C | 28A | 800pF @ 0V, 1MHz | |||
|
G3S12005A | 7.6200 | |
3236 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 5 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 22A | 475pF @ 0V, 1MHz | |||
|
G4S06530BT | 16.1800 | |
4468 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 39A (DC) | 1.7 V @ 15 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | |||
|
G3S12003H | 4.5600 | |
4100 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 3 A | 0 ns | 100 µA @ 1200 V | -55°C ~ 175°C | 9A | 260pF @ 0V, 1MHz | |||
|
GAS06520P | 11.1000 | |
4087 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 20 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 66.5A | 1390pF @ 0V, 1MHz | |||
|
G3S12003C | 4.5600 | |
8435 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 3 A | 0 ns | 100 µA @ 1200 V | -55°C ~ 175°C | 12A | 260pF @ 0V, 1MHz | |||
|
G3S12010A | 17.2000 | |
2786 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 34.8A | 770pF @ 0V, 1MHz | |||
|
G5S12002A | 2.8400 | |
9027 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 2 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 10A | 170pF @ 0V, 1MHz | |||
|
G4S12020A | 33.5600 | |
8244 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | - | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 120 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 73A | 2600pF @ 0V, 1MHz | |||
|
G5S12010A | 12.6300 | |
5409 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | download | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 37A | - | |||||
|
G4S06510CT | 4.8600 | |
9621 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 31A | 550pF @ 0V, 1MHz | |||
|
G4S06506CT | 3.9000 | |
2101 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.8 V @ 6 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 13.8A | 181pF @ 0V, 1MHz | |||
 |
G5S6504Z | 3.1900 | |
1707 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | 8-PowerTDFN | SiC (Silicon Carbide) Schottky | 8-DFN (4.9x5.75) | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.6 V @ 4 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 15.45A | 181pF @ 0V, 1MHz | |||
|
G4S06510AT | 4.8600 | |
7642 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 30.5A | 550pF @ 0V, 1MHz | |||
|
G3S06510P | 8.2400 | |
9429 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 32.8A | 690pF @ 0V, 1MHz | |||
|
G5S06508DT | 5.3200 | |
7962 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiC (Silicon Carbide) Schottky | TO-263 | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 8 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 32A | 550pF @ 0V, 1MHz | |||
|
G5S06505CT | 4.6400 | |
7560 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 5 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 24A | 395pF @ 0V, 1MHz | |||
 |
G5S06506QT | 5.5400 | |
4125 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | 4-PowerTSFN | SiC (Silicon Carbide) Schottky | 4-DFN (8x8) | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 6 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 34A | 395pF @ 0V, 1MHz |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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