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Discrete Semiconductor Products(16965)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
BSM100GD120DLCBOSA1 | 316.1000 |  |
5 | 0.00000000 | Infineon Technologies | * | Bulk | Active | BSM100 | download | Vendor Undefined | REACH Unaffected | 2156-BSM100GD120DLCBOSA1-448 | 1 | |||||||||||||||||||||||||||||||||||
|
IRAMS06UP60A-2 | 15.2600 | |
1 | 0.00000000 | Infineon Technologies | * | Bulk | Active | download | Vendor Undefined | REACH Affected | 2156-IRAMS06UP60A-2-448 | 1 | ||||||||||||||||||||||||||||||||||||
 |
BAT1704E6583HTSA1 | 0.0600 | |
21 | 0.00000000 | Infineon Technologies | * | Bulk | Active | download | Vendor Undefined | REACH Unaffected | 2156-BAT1704E6583HTSA1-448 | 1 | ||||||||||||||||||||||||||||||||||||
 |
IRF9Z34NLPBF | 1.0400 | |
335 | 0.00000000 | Infineon Technologies | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | TO-262 | - | Vendor Undefined | REACH Unaffected | 2156-IRF9Z34NLPBF-448 | 335 | P-Channel | 55 V | 19A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±20V | 620 pF @ 25 V | - | 3.8W (Ta), 68W (Tc) | ||||||||||||||||||||
|
FD1200R17KE3KNOSA1 | 1.0000 | |
1 | 0.00000000 | Infineon Technologies | * | Bulk | Active | download | Vendor Undefined | REACH Affected | 2156-FD1200R17KE3KNOSA1-448 | 1 | ||||||||||||||||||||||||||||||||||||
|
AUIRFN8458TR | - | |
4462 | 0.00000000 | Infineon Technologies | * | Bulk | Active | download | Vendor Undefined | REACH Unaffected | 2156-AUIRFN8458TR-448 | 1 | ||||||||||||||||||||||||||||||||||||
 |
SPP08N50C3XKSA1 | 0.9200 | |
22 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | PG-TO220-3-1 | download | Vendor Undefined | REACH Unaffected | 2156-SPP08N50C3XKSA1-448 | 1 | N-Channel | 560 V | 7.6A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 32 nC @ 10 V | ±20V | 750 pF @ 25 V | - | 83W (Tc) | ||||||||||||||||||||
|
IPS70R2K0CEE8211AKMA1 | 0.2300 | |
40 | 0.00000000 | Infineon Technologies | * | Bulk | Active | download | Vendor Undefined | REACH Unaffected | 2156-IPS70R2K0CEE8211AKMA1-448 | 1 | ||||||||||||||||||||||||||||||||||||
|
FS150R12KT4PB11BPSA1 | - | |
2725 | 0.00000000 | Infineon Technologies | * | Bulk | Active | FS150R12 | download | Vendor Undefined | REACH Unaffected | 2156-FS150R12KT4PB11BPSA1-448 | EAR99 | 8541.10.0080 | 1 | |||||||||||||||||||||||||||||||||
|
IRF6218PBF | - | |
4637 | 0.00000000 | Infineon Technologies | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | Vendor Undefined | REACH Unaffected | 2156-IRF6218PBF-448 | 1 | P-Channel | 150 V | 27A (Tc) | 10V | 150mOhm @ 16A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±20V | 2210 pF @ 25 V | - | 250W (Tc) | ||||||||||||||||||||
 |
IM393S6EXKLA1 | 7.1000 | |
550 | 0.00000000 | Infineon Technologies | * | Bulk | Active | download | Vendor Undefined | REACH Unaffected | 2156-IM393S6EXKLA1-448 | 1 | ||||||||||||||||||||||||||||||||||||
|
AUIRF1404 | 6.3400 | |
16 | 0.00000000 | Infineon Technologies | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | Not Applicable | REACH Unaffected | 2156-AUIRF1404-448 | EAR99 | 8541.29.0095 | 52 | N-Channel | 40 V | 160A (Tc) | 10V | 4mOhm @ 121A, 10V | 4V @ 250µA | 196 nC @ 10 V | ±20V | 5669 pF @ 25 V | - | 333W (Tc) | ||||||||||||||||||
|
DD800S17K3B2NOSA1 | 842.7200 | |
86 | 0.00000000 | Infineon Technologies | * | Bulk | Active | download | Vendor Undefined | REACH Affected | 2156-DD800S17K3B2NOSA1-448 | 1 | ||||||||||||||||||||||||||||||||||||
|
FS100R17KE3BOSA1 | 212.3300 | |
4 | 0.00000000 | Infineon Technologies | * | Bulk | Active | download | Vendor Undefined | REACH Unaffected | 2156-FS100R17KE3BOSA1-448 | 2 | ||||||||||||||||||||||||||||||||||||
|
FS50R06KE3BOSA1 | 51.9500 | |
22 | 0.00000000 | Infineon Technologies | * | Bulk | Active | download | Vendor Undefined | REACH Unaffected | 2156-FS50R06KE3BOSA1-448 | 1 | ||||||||||||||||||||||||||||||||||||
 |
IRF7410GTRPBF | - | |
3897 | 0.00000000 | Infineon Technologies | HEXFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | 8-SO | download | Vendor Undefined | REACH Unaffected | 2156-IRF7410GTRPBF-448 | 1 | P-Channel | 12 V | 16A (Ta) | 1.8V, 4.5V | 7mOhm @ 16A, 4.5V | 900mV @ 250µA | 91 nC @ 4.5 V | ±8V | 8676 pF @ 10 V | - | 2.5W (Ta) | ||||||||||||||||||||
 |
AUIRF1324STRL | 2.7200 | |
466 | 0.00000000 | Infineon Technologies | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | 1 (Unlimited) | REACH Unaffected | 2156-AUIRF1324STRL-448 | EAR99 | 8541.29.0095 | 1 | N-Channel | 24 V | 195A (Tc) | 10V | 1.65mOhm @ 195A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 7590 pF @ 24 V | - | 300W (Tc) | ||||||||||||||||||
|
FF600R12ME4B11BPSA1 | - | |
2613 | 0.00000000 | Infineon Technologies | * | Bulk | Active | FF600R12 | download | Vendor Undefined | REACH Unaffected | 2156-FF600R12ME4B11BPSA1-448 | EAR99 | 0000.00.0000 | 1 | |||||||||||||||||||||||||||||||||
|
DF450R17N2E4PB11BDLA1 | 103.6600 | |
84 | 0.00000000 | Infineon Technologies | * | Bulk | Active | DF450 | - | Vendor Undefined | Vendor Undefined | 2156-DF450R17N2E4PB11BDLA1-448 | 1 | |||||||||||||||||||||||||||||||||||
|
FF400R33KF2CNOSA1 | 2.0000 | |
4 | 0.00000000 | Infineon Technologies | * | Bulk | Active | download | Vendor Undefined | REACH Affected | 2156-FF400R33KF2CNOSA1-448 | 1 | ||||||||||||||||||||||||||||||||||||
 |
IDH05G65C5XKSA1 | 1.0000 | |
1623 | 0.00000000 | Infineon Technologies | CoolSiC™+ | Bulk | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | PG-TO220-2-2 | download | Vendor Undefined | REACH Unaffected | 2156-IDH05G65C5XKSA1-448 | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 5 A | 0 ns | 170 µA @ 650 V | -55°C ~ 175°C | 5A | 160pF @ 1V, 1MHz | ||||||||||||||||||||||||
|
IRG4BC40FPBF | - | |
5316 | 0.00000000 | Infineon Technologies | * | Bulk | Active | download | Vendor Undefined | REACH Unaffected | 2156-IRG4BC40FPBF-448 | EAR99 | 8541.29.0095 | 1 | ||||||||||||||||||||||||||||||||||
|
IRGS8B60KPBF | 0.8500 | |
550 | 0.00000000 | Infineon Technologies | * | Bulk | Active | download | Vendor Undefined | REACH Unaffected | 2156-IRGS8B60KPBF-448 | 1 | ||||||||||||||||||||||||||||||||||||
|
F475R12KS4B11BOSA1 | - | |
7173 | 0.00000000 | Infineon Technologies | * | Bulk | Active | download | Vendor Undefined | REACH Unaffected | 2156-F475R12KS4B11BOSA1-448 | 1 | ||||||||||||||||||||||||||||||||||||
|
IPD60R750E6ATMA1 | 1.0000 | |
3750 | 0.00000000 | Infineon Technologies | CoolMOS™ E6 | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IPD60R | MOSFET (Metal Oxide) | PG-TO252-3 | download | Vendor Undefined | REACH Unaffected | 2156-IPD60R750E6ATMA1-448 | EAR99 | 0000.00.0000 | 1 | N-Channel | 600 V | 5.7A (Tc) | 10V | 750mOhm @ 2A, 10V | 3.5V @ 170µA | 17.2 nC @ 10 V | ±20V | 373 pF @ 100 V | - | 48W (Tc) | |||||||||||||||||
 |
BCP51H6327XTSA1 | 0.1100 | |
105 | 0.00000000 | Infineon Technologies | - | Bulk | Active | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | 2 W | PG-SOT223-4 | download | Vendor Undefined | REACH Unaffected | 2156-BCP51H6327XTSA1-448 | 1 | 45 V | 1 A | 100nA (ICBO) | PNP | 500mV @ 50mA, 500mA | 40 @ 150mA, 2V | 125MHz | ||||||||||||||||||||||||
|
FF150R12YT3BOMA1 | - | |
3566 | 0.00000000 | Infineon Technologies | * | Bulk | Active | download | Vendor Undefined | REACH Unaffected | 2156-FF150R12YT3BOMA1-448 | 1 | ||||||||||||||||||||||||||||||||||||
 |
IRF6894MTRPBF | 1.0400 | |
1 | 0.00000000 | Infineon Technologies | HEXFET® | Bulk | Active | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | MOSFET (Metal Oxide) | DIRECTFET™ MX | download | Vendor Undefined | REACH Unaffected | 2156-IRF6894MTRPBF-448 | 1 | N-Channel | 25 V | 32A (Ta), 160A (Tc) | 4.5V, 10V | 1.3mOhm @ 33A, 10V | 2.1V @ 100µA | 39 nC @ 4.5 V | ±16V | 4160 pF @ 13 V | Schottky Diode (Body) | 2.1W (Ta), 54W (Tc) | ||||||||||||||||||||
 |
BB545E7904HTSA1 | 0.0400 | |
303 | 0.00000000 | Infineon Technologies | * | Bulk | Active | download | Vendor Undefined | REACH Unaffected | 2156-BB545E7904HTSA1-448 | 1 | ||||||||||||||||||||||||||||||||||||
|
IDH16S60CAKSA1 | 3.3800 | |
12 | 0.00000000 | Infineon Technologies | CoolSiC™+ | Bulk | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | PG-TO220-2-2 | download | Vendor Undefined | REACH Unaffected | 2156-IDH16S60CAKSA1-448 | EAR99 | 8541.10.0080 | 1 | No Recovery Time > 500mA (Io) | 600 V | 1.7 V @ 16 A | 0 ns | 200 µA @ 600 V | -55°C ~ 175°C | 16A | 650pF @ 1V, 1MHz |
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Daily average RFQ Volume
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