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Email: sales@sic-components.com
Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F |
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2N7636-GA | - | ![]() |
8687 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Obsolete | -55°C ~ 225°C (TJ) | Surface Mount | TO-276AA | SiC (Silicon Carbide Junction Transistor) | TO-276 | - | RoHS non-compliant | 1 (Unlimited) | 1242-1147 | EAR99 | 8541.29.0095 | 10 | - | 650 V | 4A (Tc) (165°C) | - | 415mOhm @ 4A | - | - | 324 pF @ 35 V | - | 125W (Tc) | ||||||||||||||
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MBRF30080 | - | ![]() |
7730 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Obsolete | Chassis Mount | TO-244AB | MBRF3008 | Schottky | TO-244AB | - | 1 (Unlimited) | EAR99 | 8541.10.0080 | 25 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 80 V | 150A | 840 mV @ 150 A | 1 mA @ 80 V | -55°C ~ 150°C | |||||||||||||||||||
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GA50JT12-263 | - | ![]() |
6024 | 0.00000000 | GeneSiC Semiconductor | * | Tube | Obsolete | - | 1 (Unlimited) | OBSOLETE | 50 | - | - | ||||||||||||||||||||||||||||||
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FR16GR05 | 8.5020 | ![]() |
1907 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis, Stud Mount | DO-203AA, DO-4, Stud | Standard, Reverse Polarity | DO-4 | download | RoHS Compliant | 1 (Unlimited) | FR16GR05GN | EAR99 | 8541.10.0080 | 250 | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | 1.1 V @ 16 A | 500 ns | 25 µA @ 100 V | -65°C ~ 150°C | 16A | - | |||||||||||||||||
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GD10MPS12A | 4.1200 | ![]() |
1 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 1242-GD10MPS12A | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 1200 V | 1.8 V @ 10 A | 0 ns | 5 µA @ 1200 V | -55°C ~ 175°C | 25A | 367pF @ 1V, 1MHz | ||||||||||||||||
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GD10MPS12H | 4.9900 | ![]() |
2 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2 | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 1242-GD10MPS12H | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 175°C | 10A | - | ||||||||||||||||||
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GD2X100MPS06N | 47.9100 | ![]() |
44 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Active | Chassis Mount | SOT-227-4, miniBLOC | GD2X | SiC (Silicon Carbide) Schottky | SOT-227 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 1242-GD2X100MPS06N | EAR99 | 8541.10.0080 | 10 | No Recovery Time > 500mA (Io) | 2 Independent | 650 V | 108A (DC) | 1.8 V @ 100 A | 0 ns | 5 µA @ 650 V | -55°C ~ 175°C | |||||||||||||||
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G3R60MT07D | 10.1400 | ![]() |
1 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | - | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 1242-G3R60MT07D | EAR99 | 8541.29.0095 | 30 | - | 750 V | - | - | - | - | +20V, -10V | - | - | ||||||||||||||
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GD10MPS17H | 8.1700 | ![]() |
7530 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 1242-GD10MPS17H | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1700 V | 1.8 V @ 10 A | 0 ns | 20 µA @ 1700 V | -55°C ~ 175°C | 26A | 721pF @ 1V, 1MHz | ||||||||||||||||
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GD30MPS12J | 10.9900 | ![]() |
119 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Active | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiC (Silicon Carbide) Schottky | TO-263-7 | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 1242-GD30MPS12J | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 175°C | 30A | - | ||||||||||||||||||
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GD02MPS12E | 1.5400 | ![]() |
8853 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tape & Reel (TR) | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252-2 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 2,500 | No Recovery Time > 500mA (Io) | 1200 V | 1.8 V @ 2 A | 0 ns | 5 µA @ 1200 V | -55°C ~ 175°C | 8A | 73pF @ 1V, 1MHz | |||||||||||||||||
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GD25MPS17H | 18.0100 | ![]() |
5751 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 1242-GD25MPS17H | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1700 V | 1.8 V @ 25 A | 0 ns | 20 µA @ 1700 V | -55°C ~ 175°C | 56A | 1083pF @ 1V, 1MHz | ||||||||||||||||
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GC50MPS33H | 244.8500 | ![]() |
275 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2 | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 1242-GC50MPS33H | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 3300 V | 0 ns | 175°C | 50A | - | ||||||||||||||||||
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MSRT20080D | 110.1030 | ![]() |
2563 | 0.00000000 | GeneSiC Semiconductor | * | Bulk | Active | MSRT200 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 40 | |||||||||||||||||||||||||||||
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GC2X100MPS06-227 | - | ![]() |
5810 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Discontinued at SIC | Chassis Mount | SOT-227-4, miniBLOC | GC2X100 | SiC (Silicon Carbide) Schottky | SOT-227 | download | RoHS Compliant | 1 (Unlimited) | REACH Unaffected | 1242-1349 | EAR99 | 8541.10.0080 | 10 | No Recovery Time > 500mA (Io) | 2 Independent | 650 V | 209A (DC) | 1.8 V @ 50 A | 0 ns | 20 µA @ 650 V | -55°C ~ 175°C | |||||||||||||||
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GB2X50MPS17-227 | 98.1200 | ![]() |
116 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Active | Chassis Mount | SOT-227-4, miniBLOC | GB2X50 | SiC (Silicon Carbide) Schottky | SOT-227 | download | RoHS Compliant | 1 (Unlimited) | REACH Unaffected | 1242-1350 | EAR99 | 8541.10.0080 | 10 | No Recovery Time > 500mA (Io) | 2 Independent | 1700 V | 136A (DC) | 1.8 V @ 50 A | 0 ns | 50 µA @ 1700 V | -55°C ~ 175°C | |||||||||||||||
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GC2X50MPS06-227 | 54.0960 | ![]() |
5230 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Active | Chassis Mount | SOT-227-4, miniBLOC | GC2X50 | SiC (Silicon Carbide) Schottky | SOT-227 | download | RoHS Compliant | 1 (Unlimited) | REACH Unaffected | 1242-1348 | EAR99 | 8541.10.0080 | 10 | No Recovery Time > 500mA (Io) | 2 Independent | 650 V | 104A (DC) | 1.8 V @ 50 A | 0 ns | 10 µA @ 650 V | -55°C ~ 175°C | |||||||||||||||
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G2R1000MT17J | 6.4400 | ![]() |
14 | 0.00000000 | GeneSiC Semiconductor | G2R™ | Tube | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | G2R1000 | SiCFET (Silicon Carbide) | TO-263-7 | download | RoHS Compliant | 1 (Unlimited) | 1242-G2R1000MT17J | EAR99 | 8541.29.0095 | 50 | N-Channel | 1700 V | 3A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 4V @ 2mA | +20V, -10V | 139 pF @ 1000 V | - | 54W (Tc) | |||||||||||||
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G3R160MT17D | 12.2400 | ![]() |
9458 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | G3R160 | SiCFET (Silicon Carbide) | TO-247-3 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R160MT17D | EAR99 | 8541.29.0095 | 30 | N-Channel | 1700 V | 21A (Tc) | 15V | 208mOhm @ 12A, 15V | 2.7V @ 5mA | 51 nC @ 15 V | ±15V | 1272 pF @ 1000 V | - | 175W (Tc) | ||||||||||||
G3R30MT12K | 22.5300 | ![]() |
844 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | G3R30 | SiCFET (Silicon Carbide) | TO-247-4 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R30MT12K | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 90A (Tc) | 15V | 36mOhm @ 50A, 15V | 2.69V @ 12mA | 155 nC @ 15 V | ±15V | 3901 pF @ 800 V | - | 400W (Tc) | |||||||||||||
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GE2X10MPS06D | - | ![]() |
8002 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Obsolete | Through Hole | TO-247-3 | GE2X10 | SiC (Silicon Carbide) Schottky | TO-247-3 | download | RoHS Compliant | 1 (Unlimited) | REACH Unaffected | 1242-GE2X10MPS06D | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 23A (DC) | -55°C ~ 175°C | ||||||||||||||||||
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GD2X30MPS12N | 33.8900 | ![]() |
246 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Active | Chassis Mount | SOT-227-4, miniBLOC | GD2X | SiC (Silicon Carbide) Schottky | SOT-227 | download | RoHS Compliant | 1 (Unlimited) | REACH Unaffected | 1242-GD2X30MPS12N | EAR99 | 8541.10.0080 | 10 | No Recovery Time > 500mA (Io) | 2 Independent | 1200 V | 52A (DC) | -55°C ~ 175°C | ||||||||||||||||||
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G3R20MT17N | 135.4600 | ![]() |
47 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | G3R20 | SiCFET (Silicon Carbide) | SOT-227 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R20MT17N | EAR99 | 8541.29.0095 | 10 | N-Channel | 1700 V | 100A (Tc) | 15V | 26mOhm @ 75A, 15V | 2.7V @ 15mA | 400 nC @ 15 V | ±15V | 10187 pF @ 1000 V | - | 523W (Tc) | ||||||||||||
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G3R450MT17D | 7.2100 | ![]() |
3 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | G3R450 | SiCFET (Silicon Carbide) | TO-247-3 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R450MT17D | EAR99 | 8541.29.0095 | 30 | N-Channel | 1700 V | 9A (Tc) | 15V | 585mOhm @ 4A, 15V | 2.7V @ 2mA | 18 nC @ 15 V | ±15V | 454 pF @ 1000 V | - | 88W (Tc) | ||||||||||||
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GD30MPS06J | 6.4200 | ![]() |
733 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Active | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | GD30MPS06 | SiC (Silicon Carbide) Schottky | TO-263-7 | download | RoHS Compliant | 1 (Unlimited) | REACH Unaffected | 1242-GD30MPS06J | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | -55°C ~ 175°C | 51A | 735pF @ 1V, 1MHz | ||||||||||||||||||
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G2R1000MT17D | 5.4400 | ![]() |
717 | 0.00000000 | GeneSiC Semiconductor | G2R™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | G2R1000 | SiCFET (Silicon Carbide) | TO-247-3 | download | RoHS Compliant | 1 (Unlimited) | 1242-G2R1000MT17D | EAR99 | 8541.29.0095 | 30 | N-Channel | 1700 V | 5A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 5.5V @ 500µA | 11 nC @ 20 V | +25V, -10V | 111 pF @ 1000 V | - | 44W (Tc) | ||||||||||||
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GD2X75MPS17N | 111.7100 | ![]() |
199 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Active | Chassis Mount | SOT-227-4, miniBLOC | GD2X | SiC (Silicon Carbide) Schottky | SOT-227 | download | RoHS Compliant | 1 (Unlimited) | REACH Unaffected | 1242-GD2X75MPS17N | EAR99 | 8541.10.0080 | 10 | No Recovery Time > 500mA (Io) | 2 Independent | 1700 V | 115A (DC) | -55°C ~ 175°C | ||||||||||||||||||
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GE08MPS06E | 2.4000 | ![]() |
4567 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Cut Tape (CT) | Discontinued at SIC | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | GE08MPS06 | SiC (Silicon Carbide) Schottky | TO-252-2 | download | RoHS Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 2,500 | No Recovery Time > 500mA (Io) | 650 V | -55°C ~ 175°C | 21A | 373pF @ 1V, 1MHz | |||||||||||||||||||
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MURT20060 | 104.4930 | ![]() |
5897 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis Mount | Three Tower | Standard | Three Tower | download | RoHS Compliant | 1 (Unlimited) | MURT20060GN | EAR99 | 8541.10.0080 | 40 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 600 V | 100A | 1.7 V @ 100 A | 160 ns | 25 µA @ 50 V | -55°C ~ 150°C | |||||||||||||||||
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MURTA30020R | 159.9075 | ![]() |
6270 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis Mount | Three Tower | MURTA30020 | Standard | Three Tower | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 24 | Standard Recovery >500ns, > 200mA (Io) | 1 Pair Common Anode | 200 V | 150A | 1 V @ 150 A | 25 µA @ 200 V | -55°C ~ 150°C |
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