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Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Type | Base Product Number | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Current | Voltage | Voltage - Isolation | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Diode Type | Voltage - Peak Reverse (Max) |
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GD60MPS06H | 12.7400 | 1 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Active | Through Hole | TO-247-2 | GD60 | SiC (Silicon Carbide) Schottky | TO-247-2 | download | 1 (Unlimited) | 1242-GD60MPS06H | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.8 V @ 60 A | 0 ns | 10 µA @ 650 V | -55°C ~ 175°C | 82A | 1463pF @ 1V, 1MHz | ||||||||||||||||||||||||||
S320MR | 62.2080 | 7290 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis, Stud Mount | DO-205AB, DO-9, Stud | S320 | Standard, Reverse Polarity | DO-205AB (DO-9) | download | RoHS Compliant | 1 (Unlimited) | S320MRGN | EAR99 | 8541.10.0080 | 8 | Standard Recovery >500ns, > 200mA (Io) | 1000 V | 1.2 V @ 300 A | 10 µA @ 600 V | -60°C ~ 180°C | 320A | - | ||||||||||||||||||||||||||
MBRT50060R | - | 8392 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Obsolete | Chassis Mount | Three Tower | Schottky | Three Tower | download | RoHS Compliant | 1 (Unlimited) | MBRT50060RGN | EAR99 | 8541.10.0080 | 25 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Anode | 60 V | 250A | 800 mV @ 250 A | 1 mA @ 20 V | -55°C ~ 150°C | |||||||||||||||||||||||||||
FST12080 | 70.4280 | 5683 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis Mount | TO-249AB | Schottky | TO-249AB | download | RoHS Compliant | 1 (Unlimited) | FST12080GN | EAR99 | 8541.10.0080 | 40 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 80 V | 120A (DC) | 840 mV @ 120 A | 2 mA @ 20 V | -55°C ~ 150°C | |||||||||||||||||||||||||||
M3P100A-60 | - | 4378 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Obsolete | - | Chassis Mount | Module | Standard | Module | - | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 25 | 1.15 V @ 100 A | 10 mA @ 600 V | 100 A | Three Phase | 600 V | |||||||||||||||||||||||||||||
KBPC3506W | 2.4720 | 2086 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, KBPC-W | KBPC3506 | Standard | KBPC-W | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | 1.1 V @ 17.5 A | 5 µA @ 600 V | 35 A | Single Phase | 600 V | ||||||||||||||||||||||||||||
150KR20A | 35.5695 | 3386 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis, Stud Mount | DO-205AA, DO-8, Stud | Standard, Reverse Polarity | DO-205AA (DO-8) | download | RoHS Compliant | 1 (Unlimited) | 150KR20AGN | EAR99 | 8541.10.0080 | 10 | Standard Recovery >500ns, > 200mA (Io) | 200 V | 1.33 V @ 150 A | 35 mA @ 200 V | -40°C ~ 200°C | 150A | - | |||||||||||||||||||||||||||
MBR8035R | 22.1985 | 9491 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis, Stud Mount | DO-203AB, DO-5, Stud | MBR8035 | Schottky, Reverse Polarity | DO-5 | download | RoHS Compliant | 1 (Unlimited) | MBR8035RGN | EAR99 | 8541.10.0080 | 100 | Fast Recovery =< 500ns, > 200mA (Io) | 35 V | 750 mV @ 80 A | 1 mA @ 35 V | -65°C ~ 150°C | 80A | - | ||||||||||||||||||||||||||
MSRT20080AD | 80.4872 | 1220 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis Mount | Three Tower | MSRT200 | Standard | Three Tower | - | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 25 | Standard Recovery >500ns, > 200mA (Io) | 1 Pair Series Connection | 800 V | 200A | 1.1 V @ 200 A | 10 µA @ 800 V | -55°C ~ 150°C | |||||||||||||||||||||||||||
MBRF500150 | - | 3678 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Obsolete | Chassis Mount | TO-244AB | Schottky | TO-244AB | - | 1 (Unlimited) | EAR99 | 8541.10.0080 | 25 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 150 V | 250A | 880 mV @ 250 A | 1 mA @ 150 V | -55°C ~ 150°C | |||||||||||||||||||||||||||||
MURT20010R | 104.4930 | 2806 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis Mount | Three Tower | MURT20010 | Standard | Three Tower | download | RoHS Compliant | 1 (Unlimited) | MURT20010RGN | EAR99 | 8541.10.0080 | 40 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Anode | 100 V | 100A | 1.3 V @ 100 A | 75 ns | 25 µA @ 50 V | -55°C ~ 150°C | |||||||||||||||||||||||||
MBR50040CT | - | 4431 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Obsolete | Chassis Mount | Twin Tower | Schottky | Twin Tower | download | RoHS Compliant | 1 (Unlimited) | MBR50040CTGN | EAR99 | 8541.10.0080 | 25 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 40 V | 250A | 750 mV @ 250 A | 1 mA @ 20 V | -55°C ~ 150°C | |||||||||||||||||||||||||||
MBRF20020 | - | 4219 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Obsolete | Chassis Mount | TO-244AB | Schottky | TO-244AB | - | 1 (Unlimited) | EAR99 | 8541.10.0080 | 25 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 20 V | 100A | 700 mV @ 100 A | 1 mA @ 20 V | -55°C ~ 150°C | |||||||||||||||||||||||||||||
GD10MPS17H | 8.1700 | 7530 | 0.00000000 | GeneSiC Semiconductor | SiC Schottky MPS™ | Tube | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 1242-GD10MPS17H | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1700 V | 1.8 V @ 10 A | 0 ns | 20 µA @ 1700 V | -55°C ~ 175°C | 26A | 721pF @ 1V, 1MHz | |||||||||||||||||||||||||
1N3881R | 7.3900 | 592 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis, Stud Mount | DO-203AA, DO-4, Stud | 1N3881R | Standard, Reverse Polarity | DO-4 | download | RoHS Compliant | 1 (Unlimited) | 1242-1086 | EAR99 | 8541.10.0080 | 250 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | 1.4 V @ 6 A | 200 ns | 15 µA @ 50 V | -65°C ~ 150°C | 6A | - | |||||||||||||||||||||||||
150K60A | 35.5695 | 9550 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis, Stud Mount | DO-205AA, DO-8, Stud | 150K60 | Standard | DO-205AA (DO-8) | download | RoHS Compliant | 1 (Unlimited) | 150K60AGN | EAR99 | 8541.10.0080 | 10 | Standard Recovery >500ns, > 200mA (Io) | 600 V | 1.33 V @ 150 A | 35 mA @ 600 V | -40°C ~ 200°C | 150A | - | ||||||||||||||||||||||||||
MURT10060 | 93.0525 | 9508 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis Mount | Three Tower | Standard | Three Tower | download | RoHS Compliant | 1 (Unlimited) | MURT10060GN | EAR99 | 8541.10.0080 | 40 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 600 V | 50A | 1.7 V @ 100 A | 75 ns | 25 µA @ 50 V | -55°C ~ 150°C | ||||||||||||||||||||||||||
MBRH12080 | 60.0375 | 6952 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis Mount | D-67 | Schottky | D-67 | download | RoHS Compliant | 1 (Unlimited) | MBRH12080GN | EAR99 | 8541.10.0080 | 36 | Fast Recovery =< 500ns, > 200mA (Io) | 80 V | 840 mV @ 120 A | 4 mA @ 20 V | 120A | - | ||||||||||||||||||||||||||||
GA100SICP12-227 | - | 1902 | 0.00000000 | GeneSiC Semiconductor | - | Tube | Obsolete | Chassis Mount | SOT-227-4, miniBLOC | - | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 10 | - | 100 A | 1.2 kV | - | |||||||||||||||||||||||||||||||||
G2R50MT33K | 295.6700 | 78 | 0.00000000 | GeneSiC Semiconductor | G2R™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4 | download | RoHS Compliant | 1 (Unlimited) | 1242-G2R50MT33K | EAR99 | 8541.29.0095 | 30 | N-Channel | 3300 V | 63A (Tc) | 20V | 50mOhm @ 40A, 20V | 3.5V @ 10mA (Typ) | 340 nC @ 20 V | +25V, -10V | 7301 pF @ 1000 V | Standard | 536W (Tc) | ||||||||||||||||||||||
G3R60MT07D | 10.1400 | 1 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | - | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 1242-G3R60MT07D | EAR99 | 8541.29.0095 | 30 | - | 750 V | - | - | - | - | +20V, -10V | - | - | |||||||||||||||||||||||
FR20M05 | 9.2895 | 8771 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis, Stud Mount | DO-203AB, DO-5, Stud | Standard | DO-5 | download | RoHS Compliant | 1 (Unlimited) | FR20M05GN | EAR99 | 8541.10.0080 | 100 | Fast Recovery =< 500ns, > 200mA (Io) | 1000 V | 1 V @ 20 A | 500 ns | 25 µA @ 800 V | -40°C ~ 125°C | 20A | - | ||||||||||||||||||||||||||
2N7636-GA | - | 8687 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Obsolete | -55°C ~ 225°C (TJ) | Surface Mount | TO-276AA | SiC (Silicon Carbide Junction Transistor) | TO-276 | - | RoHS non-compliant | 1 (Unlimited) | 1242-1147 | EAR99 | 8541.29.0095 | 10 | - | 650 V | 4A (Tc) (165°C) | - | 415mOhm @ 4A | - | - | 324 pF @ 35 V | - | 125W (Tc) | |||||||||||||||||||||||
G2R1000MT17J | 6.4400 | 14 | 0.00000000 | GeneSiC Semiconductor | G2R™ | Tube | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | G2R1000 | SiCFET (Silicon Carbide) | TO-263-7 | download | RoHS Compliant | 1 (Unlimited) | 1242-G2R1000MT17J | EAR99 | 8541.29.0095 | 50 | N-Channel | 1700 V | 3A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 4V @ 2mA | +20V, -10V | 139 pF @ 1000 V | - | 54W (Tc) | ||||||||||||||||||||||
G3R75MT12K | 10.7700 | 1 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | G3R75 | SiCFET (Silicon Carbide) | TO-247-4 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R75MT12K | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 41A (Tc) | 15V | 90mOhm @ 20A, 15V | 2.69V @ 7.5mA | 54 nC @ 15 V | ±15V | 1560 pF @ 800 V | - | 207W (Tc) | |||||||||||||||||||||
GA20SICP12-247 | - | 4247 | 0.00000000 | GeneSiC Semiconductor | - | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiC (Silicon Carbide Junction Transistor) | TO-247AB | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | - | 1200 V | 45A (Tc) | - | 50mOhm @ 20A | - | - | 3091 pF @ 800 V | - | 282W (Tc) | |||||||||||||||||||||||||
G3R20MT12N | 56.2000 | 9403 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | G3R20 | SiCFET (Silicon Carbide) | SOT-227 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R20MT12N | EAR99 | 8541.29.0095 | 10 | N-Channel | 1200 V | 105A (Tc) | 15V | 24mOhm @ 60A, 15V | 2.69V @ 15mA | 219 nC @ 15 V | +20V, -10V | 5873 pF @ 800 V | - | 365W (Tc) | |||||||||||||||||||||
G2R1000MT17D | 5.4400 | 717 | 0.00000000 | GeneSiC Semiconductor | G2R™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | G2R1000 | SiCFET (Silicon Carbide) | TO-247-3 | download | RoHS Compliant | 1 (Unlimited) | 1242-G2R1000MT17D | EAR99 | 8541.29.0095 | 30 | N-Channel | 1700 V | 5A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 5.5V @ 500µA | 11 nC @ 20 V | +25V, -10V | 111 pF @ 1000 V | - | 44W (Tc) | |||||||||||||||||||||
MBR7540 | 20.8845 | 8902 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis, Stud Mount | DO-203AB, DO-5, Stud | Schottky | DO-5 | download | RoHS Compliant | 1 (Unlimited) | MBR7540GN | EAR99 | 8541.10.0080 | 100 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 650 mV @ 75 A | 5 mA @ 20 V | -65°C ~ 150°C | 75A | - | |||||||||||||||||||||||||||
FR6A05 | 8.1330 | 8895 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis, Stud Mount | DO-203AA, DO-4, Stud | Standard | DO-4 | download | RoHS Compliant | 1 (Unlimited) | FR6A05GN | EAR99 | 8541.10.0080 | 250 | Fast Recovery =< 500ns, > 200mA (Io) | 50 V | 1.4 V @ 6 A | 500 ns | 25 µA @ 50 V | -65°C ~ 150°C | 16A | - |
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