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Discrete Semiconductor Products(2160)

Image Product Number Pricing(USD) Quantity ECAD Quantity Available Weight(Kg) Mfr Series Package Product Status Operating Temperature Mounting Type Package / Case Base Product Number Technology Supplier Device Package DataSheet RoHS Status Moisture Sensitivity Level (MSL) REACH Status Other Names ECCN HTSUS Standard Package Speed FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Diode Configuration Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) (per Diode) Voltage - Forward (Vf) (Max) @ If Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Current - Average Rectified (Io) Capacitance @ Vr, F Diode Type Voltage - Peak Reverse (Max)
MURT40005 GeneSiC Semiconductor MURT40005 -
RFQ
 ECAD 7628 0.00000000 GeneSiC Semiconductor - Bulk Obsolete Chassis Mount Three Tower Standard Three Tower download RoHS Compliant 1 (Unlimited) MURT40005GN EAR99 8541.10.0080 25 Fast Recovery =< 500ns, > 200mA (Io) 1 Pair Common Cathode 50 V 200A 1.3 V @ 200 A 125 ns 25 µA @ 50 V -55°C ~ 150°C
GA03JT12-247 GeneSiC Semiconductor GA03JT12-247 -
RFQ
 ECAD 8291 0.00000000 GeneSiC Semiconductor - Tube Obsolete 175°C (TJ) Through Hole TO-247-3 SiC (Silicon Carbide Junction Transistor) TO-247AB download 1 (Unlimited) EAR99 8541.29.0095 30 - 1200 V 3A (Tc) (95°C) - 460mOhm @ 3A - - - 15W (Tc)
GA06JT12-247 GeneSiC Semiconductor GA06JT12-247 -
RFQ
 ECAD 6492 0.00000000 GeneSiC Semiconductor - Tube Obsolete 175°C (TJ) Through Hole TO-247-3 SiC (Silicon Carbide Junction Transistor) TO-247AB download 1 (Unlimited) EAR99 8541.29.0095 30 - 1200 V 6A (Tc) (90°C) - 220mOhm @ 6A - - - -
G2R1000MT17J GeneSiC Semiconductor G2R1000MT17J 6.4400
RFQ
 ECAD 14 0.00000000 GeneSiC Semiconductor G2R™ Tube Active -55°C ~ 175°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA G2R1000 SiCFET (Silicon Carbide) TO-263-7 download RoHS Compliant 1 (Unlimited) 1242-G2R1000MT17J EAR99 8541.29.0095 50 N-Channel 1700 V 3A (Tc) 20V 1.2Ohm @ 2A, 20V 4V @ 2mA +20V, -10V 139 pF @ 1000 V - 54W (Tc)
G3R160MT17D GeneSiC Semiconductor G3R160MT17D 12.2400
RFQ
 ECAD 9458 0.00000000 GeneSiC Semiconductor G3R™ Tube Active -55°C ~ 175°C (TJ) Through Hole TO-247-3 G3R160 SiCFET (Silicon Carbide) TO-247-3 download RoHS Compliant 1 (Unlimited) 1242-G3R160MT17D EAR99 8541.29.0095 30 N-Channel 1700 V 21A (Tc) 15V 208mOhm @ 12A, 15V 2.7V @ 5mA 51 nC @ 15 V ±15V 1272 pF @ 1000 V - 175W (Tc)
G3R30MT12K GeneSiC Semiconductor G3R30MT12K 22.5300
RFQ
 ECAD 844 0.00000000 GeneSiC Semiconductor G3R™ Tube Active -55°C ~ 175°C (TJ) Through Hole TO-247-4 G3R30 SiCFET (Silicon Carbide) TO-247-4 download RoHS Compliant 1 (Unlimited) 1242-G3R30MT12K EAR99 8541.29.0095 30 N-Channel 1200 V 90A (Tc) 15V 36mOhm @ 50A, 15V 2.69V @ 12mA 155 nC @ 15 V ±15V 3901 pF @ 800 V - 400W (Tc)
GE2X10MPS06D GeneSiC Semiconductor GE2X10MPS06D -
RFQ
 ECAD 8002 0.00000000 GeneSiC Semiconductor SiC Schottky MPS™ Tube Obsolete Through Hole TO-247-3 GE2X10 SiC (Silicon Carbide) Schottky TO-247-3 download RoHS Compliant 1 (Unlimited) REACH Unaffected 1242-GE2X10MPS06D EAR99 8541.10.0080 30 No Recovery Time > 500mA (Io) 1 Pair Common Cathode 650 V 23A (DC) -55°C ~ 175°C
GD2X30MPS12N GeneSiC Semiconductor GD2X30MPS12N 33.8900
RFQ
 ECAD 246 0.00000000 GeneSiC Semiconductor SiC Schottky MPS™ Tube Active Chassis Mount SOT-227-4, miniBLOC GD2X SiC (Silicon Carbide) Schottky SOT-227 download RoHS Compliant 1 (Unlimited) REACH Unaffected 1242-GD2X30MPS12N EAR99 8541.10.0080 10 No Recovery Time > 500mA (Io) 2 Independent 1200 V 52A (DC) -55°C ~ 175°C
G3R20MT17N GeneSiC Semiconductor G3R20MT17N 135.4600
RFQ
 ECAD 47 0.00000000 GeneSiC Semiconductor G3R™ Tube Active -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC G3R20 SiCFET (Silicon Carbide) SOT-227 download RoHS Compliant 1 (Unlimited) 1242-G3R20MT17N EAR99 8541.29.0095 10 N-Channel 1700 V 100A (Tc) 15V 26mOhm @ 75A, 15V 2.7V @ 15mA 400 nC @ 15 V ±15V 10187 pF @ 1000 V - 523W (Tc)
G3R450MT17D GeneSiC Semiconductor G3R450MT17D 7.2100
RFQ
 ECAD 3 0.00000000 GeneSiC Semiconductor G3R™ Tube Active -55°C ~ 175°C (TJ) Through Hole TO-247-3 G3R450 SiCFET (Silicon Carbide) TO-247-3 download RoHS Compliant 1 (Unlimited) 1242-G3R450MT17D EAR99 8541.29.0095 30 N-Channel 1700 V 9A (Tc) 15V 585mOhm @ 4A, 15V 2.7V @ 2mA 18 nC @ 15 V ±15V 454 pF @ 1000 V - 88W (Tc)
GD30MPS06J GeneSiC Semiconductor GD30MPS06J 6.4200
RFQ
 ECAD 733 0.00000000 GeneSiC Semiconductor SiC Schottky MPS™ Tube Active Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA GD30MPS06 SiC (Silicon Carbide) Schottky TO-263-7 download RoHS Compliant 1 (Unlimited) REACH Unaffected 1242-GD30MPS06J EAR99 8541.10.0080 50 No Recovery Time > 500mA (Io) 650 V -55°C ~ 175°C 51A 735pF @ 1V, 1MHz
G2R1000MT17D GeneSiC Semiconductor G2R1000MT17D 5.4400
RFQ
 ECAD 717 0.00000000 GeneSiC Semiconductor G2R™ Tube Active -55°C ~ 175°C (TJ) Through Hole TO-247-3 G2R1000 SiCFET (Silicon Carbide) TO-247-3 download RoHS Compliant 1 (Unlimited) 1242-G2R1000MT17D EAR99 8541.29.0095 30 N-Channel 1700 V 5A (Tc) 20V 1.2Ohm @ 2A, 20V 5.5V @ 500µA 11 nC @ 20 V +25V, -10V 111 pF @ 1000 V - 44W (Tc)
GD2X75MPS17N GeneSiC Semiconductor GD2X75MPS17N 111.7100
RFQ
 ECAD 199 0.00000000 GeneSiC Semiconductor SiC Schottky MPS™ Tube Active Chassis Mount SOT-227-4, miniBLOC GD2X SiC (Silicon Carbide) Schottky SOT-227 download RoHS Compliant 1 (Unlimited) REACH Unaffected 1242-GD2X75MPS17N EAR99 8541.10.0080 10 No Recovery Time > 500mA (Io) 2 Independent 1700 V 115A (DC) -55°C ~ 175°C
GE08MPS06E GeneSiC Semiconductor GE08MPS06E 2.4000
RFQ
 ECAD 4567 0.00000000 GeneSiC Semiconductor SiC Schottky MPS™ Cut Tape (CT) Discontinued at SIC Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 GE08MPS06 SiC (Silicon Carbide) Schottky TO-252-2 download RoHS Compliant 1 (Unlimited) REACH Unaffected EAR99 8541.10.0080 2,500 No Recovery Time > 500mA (Io) 650 V -55°C ~ 175°C 21A 373pF @ 1V, 1MHz
GD10MPS12A GeneSiC Semiconductor GD10MPS12A 4.1200
RFQ
 ECAD 1 0.00000000 GeneSiC Semiconductor SiC Schottky MPS™ Tube Active Through Hole TO-220-2 SiC (Silicon Carbide) Schottky TO-220-2 download ROHS3 Compliant 1 (Unlimited) REACH Unaffected 1242-GD10MPS12A EAR99 8541.10.0080 50 No Recovery Time > 500mA (Io) 1200 V 1.8 V @ 10 A 0 ns 5 µA @ 1200 V -55°C ~ 175°C 25A 367pF @ 1V, 1MHz
GD10MPS12H GeneSiC Semiconductor GD10MPS12H 4.9900
RFQ
 ECAD 2 0.00000000 GeneSiC Semiconductor SiC Schottky MPS™ Tube Active Through Hole TO-247-2 SiC (Silicon Carbide) Schottky TO-247-2 - ROHS3 Compliant 1 (Unlimited) REACH Unaffected 1242-GD10MPS12H EAR99 8541.10.0080 30 No Recovery Time > 500mA (Io) 1200 V 0 ns 175°C 10A -
GD2X100MPS06N GeneSiC Semiconductor GD2X100MPS06N 47.9100
RFQ
 ECAD 44 0.00000000 GeneSiC Semiconductor SiC Schottky MPS™ Tube Active Chassis Mount SOT-227-4, miniBLOC GD2X SiC (Silicon Carbide) Schottky SOT-227 download ROHS3 Compliant 1 (Unlimited) REACH Unaffected 1242-GD2X100MPS06N EAR99 8541.10.0080 10 No Recovery Time > 500mA (Io) 2 Independent 650 V 108A (DC) 1.8 V @ 100 A 0 ns 5 µA @ 650 V -55°C ~ 175°C
G3R60MT07D GeneSiC Semiconductor G3R60MT07D 10.1400
RFQ
 ECAD 1 0.00000000 GeneSiC Semiconductor G3R™ Tube Active - Through Hole TO-247-3 SiCFET (Silicon Carbide) TO-247-3 download ROHS3 Compliant 1 (Unlimited) REACH Unaffected 1242-G3R60MT07D EAR99 8541.29.0095 30 - 750 V - - - - +20V, -10V - -
GD10MPS17H GeneSiC Semiconductor GD10MPS17H 8.1700
RFQ
 ECAD 7530 0.00000000 GeneSiC Semiconductor SiC Schottky MPS™ Tube Active Through Hole TO-247-2 SiC (Silicon Carbide) Schottky TO-247-2 download ROHS3 Compliant 1 (Unlimited) REACH Unaffected 1242-GD10MPS17H EAR99 8541.10.0080 30 No Recovery Time > 500mA (Io) 1700 V 1.8 V @ 10 A 0 ns 20 µA @ 1700 V -55°C ~ 175°C 26A 721pF @ 1V, 1MHz
GD30MPS12J GeneSiC Semiconductor GD30MPS12J 10.9900
RFQ
 ECAD 119 0.00000000 GeneSiC Semiconductor SiC Schottky MPS™ Tube Active Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA SiC (Silicon Carbide) Schottky TO-263-7 - ROHS3 Compliant 1 (Unlimited) REACH Unaffected 1242-GD30MPS12J EAR99 8541.10.0080 50 No Recovery Time > 500mA (Io) 1200 V 0 ns 175°C 30A -
GD02MPS12E GeneSiC Semiconductor GD02MPS12E 1.5400
RFQ
 ECAD 8853 0.00000000 GeneSiC Semiconductor SiC Schottky MPS™ Tape & Reel (TR) Active Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 SiC (Silicon Carbide) Schottky TO-252-2 download ROHS3 Compliant 1 (Unlimited) REACH Unaffected EAR99 8541.10.0080 2,500 No Recovery Time > 500mA (Io) 1200 V 1.8 V @ 2 A 0 ns 5 µA @ 1200 V -55°C ~ 175°C 8A 73pF @ 1V, 1MHz
GD25MPS17H GeneSiC Semiconductor GD25MPS17H 18.0100
RFQ
 ECAD 5751 0.00000000 GeneSiC Semiconductor SiC Schottky MPS™ Tube Active Through Hole TO-247-2 SiC (Silicon Carbide) Schottky TO-247-2 download ROHS3 Compliant 1 (Unlimited) REACH Unaffected 1242-GD25MPS17H EAR99 8541.10.0080 30 No Recovery Time > 500mA (Io) 1700 V 1.8 V @ 25 A 0 ns 20 µA @ 1700 V -55°C ~ 175°C 56A 1083pF @ 1V, 1MHz
GC50MPS33H GeneSiC Semiconductor GC50MPS33H 244.8500
RFQ
 ECAD 275 0.00000000 GeneSiC Semiconductor SiC Schottky MPS™ Tube Active Through Hole TO-247-2 SiC (Silicon Carbide) Schottky TO-247-2 - ROHS3 Compliant 1 (Unlimited) REACH Unaffected 1242-GC50MPS33H EAR99 8541.10.0080 30 No Recovery Time > 500mA (Io) 3300 V 0 ns 175°C 50A -
MSRT20080D GeneSiC Semiconductor MSRT20080D 110.1030
RFQ
 ECAD 2563 0.00000000 GeneSiC Semiconductor * Bulk Active MSRT200 download RoHS Compliant 1 (Unlimited) EAR99 8541.10.0080 40
GD20MPS12H GeneSiC Semiconductor GD20MPS12H 9.6100
RFQ
 ECAD 3 0.00000000 GeneSiC Semiconductor SiC Schottky MPS™ Tube Active Through Hole TO-247-2 GD20 SiC (Silicon Carbide) Schottky TO-247-2 download 1 (Unlimited) 1242-GD20MPS12H EAR99 8541.10.0080 30 No Recovery Time > 500mA (Io) 1200 V 1.8 V @ 20 A 0 ns 10 µA @ 1200 V -55°C ~ 175°C 39A 737pF @ 1V, 1MHz
GD2X20MPS12D GeneSiC Semiconductor GD2X20MPS12D 15.2500
RFQ
 ECAD 576 0.00000000 GeneSiC Semiconductor SiC Schottky MPS™ Tube Active Through Hole TO-247-3 GD2X SiC (Silicon Carbide) Schottky TO-247-3 download 1 (Unlimited) 1242-GD2X20MPS12D EAR99 8541.10.0080 30 No Recovery Time > 500mA (Io) 1 Pair Common Cathode 1200 V 39A (DC) 1.8 V @ 20 A 0 ns 10 µA @ 1200 V -55°C ~ 175°C
GD60MPS06H GeneSiC Semiconductor GD60MPS06H 12.7400
RFQ
 ECAD 1 0.00000000 GeneSiC Semiconductor SiC Schottky MPS™ Tube Active Through Hole TO-247-2 GD60 SiC (Silicon Carbide) Schottky TO-247-2 download 1 (Unlimited) 1242-GD60MPS06H EAR99 8541.10.0080 30 No Recovery Time > 500mA (Io) 650 V 1.8 V @ 60 A 0 ns 10 µA @ 650 V -55°C ~ 175°C 82A 1463pF @ 1V, 1MHz
MSRTA200100D GeneSiC Semiconductor MSRTA200100D 142.3575
RFQ
 ECAD 4542 0.00000000 GeneSiC Semiconductor - Bulk Active Chassis Mount Module MSRTA200 Standard - download ROHS3 Compliant 1242-MSRTA200100D EAR99 8541.10.0080 24 Standard Recovery >500ns, > 200mA (Io) 1 Pair Series Connection 1000 V 200A 1.1 V @ 200 A 10 µA @ 1000 V -55°C ~ 150°C
GBJ10K GeneSiC Semiconductor GBJ10K 0.7470
RFQ
 ECAD 2810 0.00000000 GeneSiC Semiconductor - Bulk Active -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBJ GBJ10 Standard GBJ download ROHS3 Compliant 1242-GBJ10K EAR99 8541.10.0080 200 1.05 V @ 5 A 10 µA @ 800 V 10 A Single Phase 800 V
MSRT15060D GeneSiC Semiconductor MSRT15060D 98.8155
RFQ
 ECAD 6147 0.00000000 GeneSiC Semiconductor - Bulk Active Chassis Mount Three Tower MSRT150 Standard Three Tower download ROHS3 Compliant 1242-MSRT15060D EAR99 8541.10.0080 40 Standard Recovery >500ns, > 200mA (Io) 1 Pair Series Connection 600 V 150A 1.1 V @ 150 A 10 µA @ 600 V -55°C ~ 150°C
  • Daily average RFQ Volume

    2000+

    Daily average RFQ Volume

  • Standard Product Unit

    30,000,000

    Standard Product Unit

  • Worldwide Manufacturers

    2800+

    Worldwide Manufacturers

  • In-stock Warehouse

    15,000 m2

    In-stock Warehouse

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AD9208BBPZ-3000

196-LFBGA Exposed Pad

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