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Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Type | Base Product Number | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Current - Max | Current | Voltage | Voltage - Isolation | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Diode Type | Voltage - Peak Reverse (Max) | Resistance @ If, F |
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2N7639-GA | - | 7360 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Obsolete | -55°C ~ 225°C (TJ) | Through Hole | TO-257-3 | SiC (Silicon Carbide Junction Transistor) | TO-257 | download | RoHS non-compliant | 1 (Unlimited) | 1242-1150 | EAR99 | 8541.29.0095 | 10 | - | 650 V | 15A (Tc) (155°C) | - | 105mOhm @ 15A | - | - | 1534 pF @ 35 V | - | 172W (Tc) | ||||||||||||||||||||||||
GBPC5008W | 4.0155 | 3277 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC5008 | Standard | GBPC-W | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | 1.2 V @ 25 A | 5 µA @ 800 V | 50 A | Single Phase | 800 V | |||||||||||||||||||||||||||||
MBR2X030A060 | 40.2435 | 2253 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis Mount | SOT-227-4, miniBLOC | MBR2X030 | Schottky | SOT-227 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 52 | Fast Recovery =< 500ns, > 200mA (Io) | 2 Independent | 60 V | 30A | 750 mV @ 30 A | 1 mA @ 60 V | -40°C ~ 150°C | ||||||||||||||||||||||||||||
GBPC5001W | 4.0155 | 7784 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC5001 | Standard | GBPC-W | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | 1.2 V @ 25 A | 5 µA @ 100 V | 50 A | Single Phase | 100 V | |||||||||||||||||||||||||||||
GBPC5002W | 4.0155 | 1771 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC5002 | Standard | GBPC-W | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | 1.2 V @ 25 A | 5 µA @ 200 V | 50 A | Single Phase | 200 V | |||||||||||||||||||||||||||||
GKN26/04 | - | 3544 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Obsolete | Chassis, Stud Mount | DO-203AA, DO-4, Stud | Standard | DO-4 | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 5 | Standard Recovery >500ns, > 200mA (Io) | 400 V | 1.55 V @ 60 A | 4 mA @ 400 V | -40°C ~ 180°C | 25A | - | ||||||||||||||||||||||||||||||
1N3214R | 7.0650 | 9573 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis, Stud Mount | DO-203AB, DO-5, Stud | 1N3214R | Standard, Reverse Polarity | DO-5 | download | RoHS Compliant | 1 (Unlimited) | 1242-1003 | EAR99 | 8541.10.0080 | 100 | Standard Recovery >500ns, > 200mA (Io) | 600 V | 1.5 V @ 15 A | 10 µA @ 50 V | -65°C ~ 175°C | 15A | - | |||||||||||||||||||||||||||
GA20SICP12-263 | 53.7500 | 37 | 0.00000000 | GeneSiC Semiconductor | - | Tube | Active | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | - | GA20SICP12 | download | RoHS Compliant | 1 (Unlimited) | 1242-1194 | EAR99 | 8541.29.0095 | 50 | - | 20 A | 1.2 kV | - | |||||||||||||||||||||||||||||||
G3R450MT17J | 8.0400 | 7 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | G3R450 | SiCFET (Silicon Carbide) | TO-263-7 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R450MT17J | EAR99 | 8541.29.0095 | 50 | N-Channel | 1700 V | 9A (Tc) | 15V | 585mOhm @ 4A, 15V | 2.7V @ 2mA | 18 nC @ 15 V | ±15V | 454 pF @ 1000 V | - | 91W (Tc) | ||||||||||||||||||||||
G3R20MT12K | 36.0900 | 3655 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | G3R20 | SiCFET (Silicon Carbide) | TO-247-4 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R20MT12K | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 128A (Tc) | 15V | 24mOhm @ 60A, 15V | 2.69V @ 15mA | 219 nC @ 15 V | ±15V | 5873 pF @ 800 V | - | 542W (Tc) | ||||||||||||||||||||||
G3R350MT12D | 4.7400 | 3 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | G3R350 | SiCFET (Silicon Carbide) | TO-247-3 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R350MT12D | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 11A (Tc) | 15V | 420mOhm @ 4A, 15V | 2.69V @ 2mA | 12 nC @ 15 V | ±15V | 334 pF @ 800 V | - | 74W (Tc) | ||||||||||||||||||||||
2N7635-GA | - | 9225 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Obsolete | -55°C ~ 225°C (TJ) | Through Hole | TO-257-3 | SiC (Silicon Carbide Junction Transistor) | TO-257 | - | RoHS non-compliant | 1 (Unlimited) | 1242-1146 | EAR99 | 8541.29.0095 | 10 | - | 650 V | 4A (Tc) (165°C) | - | 415mOhm @ 4A | - | - | 324 pF @ 35 V | - | 47W (Tc) | ||||||||||||||||||||||||
FST160200 | 75.1110 | 3080 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis Mount | TO-249AB | Schottky | TO-249AB | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 40 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 200 V | 80A | 920 mV @ 80 A | 1 mA @ 200 V | -55°C ~ 150°C | |||||||||||||||||||||||||||||
KBPC2504W | 2.2995 | 3961 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, KBPC-W | KBPC2504 | Standard | KBPC-W | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | 1.1 V @ 12.5 A | 5 µA @ 400 V | 25 A | Single Phase | 400 V | |||||||||||||||||||||||||||||
GBPC2506W | 4.2000 | 8886 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC2506 | Standard | GBPC-W | download | RoHS Compliant | 1 (Unlimited) | 1242-1291 | EAR99 | 8541.10.0080 | 50 | 1.1 V @ 12.5 A | 5 µA @ 600 V | 25 A | Single Phase | 600 V | ||||||||||||||||||||||||||||
MBR2X050A200 | 43.6545 | 4119 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis Mount | SOT-227-4, miniBLOC | MBR2X050 | Schottky | SOT-227 | download | RoHS Compliant | 1 (Unlimited) | 1242-1299 | EAR99 | 8541.10.0080 | 52 | Fast Recovery =< 500ns, > 200mA (Io) | 2 Independent | 200 V | 100A | 920 mV @ 50 A | 3 mA @ 200 V | -40°C ~ 150°C | |||||||||||||||||||||||||||
MBR200150CTR | 90.1380 | 1591 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis Mount | Twin Tower | MBR200150 | Schottky | Twin Tower | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 40 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Anode | 150 V | 100A | 880 mV @ 100 A | 3 mA @ 150 V | -55°C ~ 150°C | ||||||||||||||||||||||||||||
KBPC3510T | 2.4750 | 6256 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, KBPC-T | KBPC3510 | Standard | KBPC-T | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | 1.1 V @ 17.5 A | 5 µA @ 1000 V | 35 A | Single Phase | 1 kV | |||||||||||||||||||||||||||||
MBRTA60020RL | - | 7830 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Obsolete | Chassis Mount | Three Tower | Schottky | Three Tower | - | 1 (Unlimited) | EAR99 | 8541.10.0080 | 18 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Anode | 20 V | 300A | 580 mV @ 300 A | 3 mA @ 20 V | -55°C ~ 150°C | ||||||||||||||||||||||||||||||
GA10JT12-263 | - | 5630 | 0.00000000 | GeneSiC Semiconductor | - | Tube | Obsolete | 175°C (TJ) | Surface Mount | - | GA10JT12 | SiC (Silicon Carbide Junction Transistor) | - | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | - | 1200 V | 25A (Tc) | - | 120mOhm @ 10A | - | - | 1403 pF @ 800 V | - | 170W (Tc) | ||||||||||||||||||||||||
G3R160MT17J | 12.9800 | 1161 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | G3R160 | SiCFET (Silicon Carbide) | TO-263-7 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R160MT17J | EAR99 | 8541.29.0095 | 50 | N-Channel | 1700 V | 22A (Tc) | 15V | 208mOhm @ 12A, 15V | 2.7V @ 5mA | 51 nC @ 15 V | ±15V | 1272 pF @ 1000 V | - | 187W (Tc) | ||||||||||||||||||||||
GA10SICP12-263 | 29.3250 | 9279 | 0.00000000 | GeneSiC Semiconductor | - | Tube | Active | 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | GA10SICP12 | SiC (Silicon Carbide Junction Transistor) | TO-263-7 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | - | 1200 V | 25A (Tc) | - | 100mOhm @ 10A | - | - | 1403 pF @ 800 V | - | 170W (Tc) | ||||||||||||||||||||||||
MBR2X050A080 | 43.6545 | 5522 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis Mount | SOT-227-4, miniBLOC | MBR2X050 | Schottky | SOT-227 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 52 | Fast Recovery =< 500ns, > 200mA (Io) | 2 Independent | 80 V | 50A | 840 mV @ 50 A | 1 mA @ 80 V | -40°C ~ 150°C | ||||||||||||||||||||||||||||
MUR2X100A04 | 52.2000 | 21 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis Mount | SOT-227-4, miniBLOC | MUR2X100 | Standard | SOT-227 | download | RoHS Compliant | 1 (Unlimited) | 1242-1313 | EAR99 | 8541.10.0080 | 52 | Fast Recovery =< 500ns, > 200mA (Io) | 2 Independent | 400 V | 100A | 1.3 V @ 100 A | 90 ns | 25 µA @ 400 V | -55°C ~ 175°C | ||||||||||||||||||||||||||
MBR120150CT | - | 9573 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Obsolete | Chassis Mount | Twin Tower | Schottky | Twin Tower | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 25 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 150 V | 60A | 880 mV @ 60 A | 1 mA @ 150 V | -55°C ~ 150°C | |||||||||||||||||||||||||||||
GBPC1510W | 2.4180 | 8311 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC1510 | Standard | GBPC-W | download | RoHS Compliant | 1 (Unlimited) | GBPC1510WGS | EAR99 | 8541.10.0080 | 50 | 1.1 V @ 7.5 A | 5 µA @ 1000 V | 15 A | Single Phase | 1 kV | ||||||||||||||||||||||||||||
MBR30030CTRL | - | 5353 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Obsolete | Chassis Mount | Twin Tower | Schottky | Twin Tower | - | 1 (Unlimited) | EAR99 | 8541.10.0080 | 25 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Anode | 30 V | 150A | 580 mV @ 150 A | 3 mA @ 30 V | -55°C ~ 150°C | ||||||||||||||||||||||||||||||
GA01PNS80-220 | 349.8000 | 6920 | 0.00000000 | GeneSiC Semiconductor | - | Tube | Active | -55°C ~ 175°C (TJ) | Axial | GA01PNS80 | - | download | RoHS Compliant | 1 (Unlimited) | 1242-1259 | EAR99 | 8541.10.0080 | 10 | 2 A | 4pF @ 1000V, 1MHz | PIN - Single | 8000V | - | ||||||||||||||||||||||||||||||
FST16035L | - | 7782 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Obsolete | Chassis Mount | TO-249AB | Schottky | TO-249AB | - | 1 (Unlimited) | EAR99 | 8541.10.0080 | 40 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 35 V | 80A | 600 mV @ 80 A | 1 mA @ 35 V | -55°C ~ 150°C | ||||||||||||||||||||||||||||||
1N3297A | 33.8130 | 7080 | 0.00000000 | GeneSiC Semiconductor | - | Bulk | Active | Chassis, Stud Mount | DO-205AA, DO-8, Stud | 1N3297 | Standard | DO-205AA (DO-8) | download | RoHS Compliant | 1 (Unlimited) | 1N3297AGN | EAR99 | 8541.10.0080 | 10 | Standard Recovery >500ns, > 200mA (Io) | 1400 V | 1.5 V @ 100 A | 7 mA @ 1400 V | -40°C ~ 200°C | 100A | - |
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