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Discrete Semiconductor Products(191)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Mounting Type | Package / Case | Technology | Supplier Device Package | REACH Status | Other Names | Standard Package | Speed | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
G3S06510A | - |  |
4908 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | Vendor Undefined | 4436-G3S06510A | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 35A | 690pF @ 0V, 1MHz | |||
 |
G5S12010D | - | |
2941 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiC (Silicon Carbide) Schottky | TO-263 | Vendor Undefined | 4436-G5S12010D | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 30.9A | 825pF @ 0V, 1MHz | |||
 |
G3S12010B | - | |
1370 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | Vendor Undefined | 4436-G3S12010B | 1 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 39A (DC) | 1.7 V @ 5 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | |||
|
G5S12030BM | - | |
9456 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | Vendor Undefined | 4436-G5S12030BM | 1 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 55A (DC) | 1.7 V @ 15 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | |||
|
G5S06506DT | - | |
9863 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiC (Silicon Carbide) Schottky | TO-263 | Vendor Undefined | 4436-G5S06506DT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 6 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 24A | 395pF @ 0V, 1MHz | |||
 |
G5S12008PM | - | |
2245 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | Vendor Undefined | 4436-G5S12008PM | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 8 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 27.9A | 550pF @ 0V, 1MHz | |||
 |
G3S06508H | - | |
7687 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | Vendor Undefined | 4436-G3S06508H | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 8 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 14A | 550pF @ 0V, 1MHz | |||
|
G5S06510AT | - | |
8322 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | Vendor Undefined | 4436-G5S06510AT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 36A | 645pF @ 0V, 1MHz | |||
|
G5S12015A | - | |
6081 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | Vendor Undefined | 4436-G5S12015A | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 15 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 53A | 1370pF @ 0V, 1MHz | |||
 |
G5S12002C | - | |
6074 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | Vendor Undefined | 4436-G5S12002C | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 2 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 8.8A | 170pF @ 0V, 1MHz | |||
|
G3S12015A | - | |
9773 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | Vendor Undefined | 4436-G3S12015A | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 15 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 57A | 1700pF @ 0V, 1MHz |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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