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Discrete Semiconductor Products(191)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Mounting Type | Package / Case | Technology | Supplier Device Package | REACH Status | Other Names | Standard Package | Speed | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
G5S12010BM | - |  |
4658 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | Vendor Undefined | 4436-G5S12010BM | 1 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 19.35A (DC) | 1.7 V @ 5 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | |||
 |
G3S06502D | - | |
9151 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiC (Silicon Carbide) Schottky | TO-263 | Vendor Undefined | 4436-G3S06502D | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 2 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 9A | 123pF @ 0V, 1MHz | |||
|
G4S06510DT | - | |
7817 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiC (Silicon Carbide) Schottky | TO-263 | Vendor Undefined | 4436-G4S06510DT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 32A | 550pF @ 0V, 1MHz | |||
 |
G3S06504H | - | |
1905 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | Vendor Undefined | 4436-G3S06504H | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 4 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 10A | 181pF @ 0V, 1MHz | |||
 |
G51XT | - | |
3988 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | SOD-123F | SiC (Silicon Carbide) Schottky | SOD-123FL | Vendor Undefined | 4436-G51XT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.6 V @ 1 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 1.84A | 57.5pF @ 0V, 1MHz | |||
|
G3S06560B | - | |
5543 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | Vendor Undefined | 4436-G3S06560B | 1 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 95A (DC) | 1.7 V @ 30 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | |||
 |
G5S06520AT | - | |
6350 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | Vendor Undefined | 4436-G5S06520AT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 20 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 68.8A | 1600pF @ 0V, 1MHz | |||
|
G5S12005H | - | |
1788 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | Vendor Undefined | 4436-G5S12005H | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 5 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 13.5A | 424pF @ 0V, 1MHz | |||
|
G5S06510DT | - | |
2481 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiC (Silicon Carbide) Schottky | TO-263 | Vendor Undefined | 4436-G5S06510DT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 38A | 645pF @ 0V, 1MHz | |||
 |
G3S06503C | - | |
3687 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | Vendor Undefined | 4436-G3S06503C | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 3 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 11.5A | 181pF @ 0V, 1MHz | |||
|
G4S06530BT | - | |
8456 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | Vendor Undefined | 4436-G4S06530BT | 1 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 39A (DC) | 1.7 V @ 15 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | |||
|
G5S12040B | - | |
8630 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | Vendor Undefined | 4436-G5S12040B | 1 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 62A (DC) | 1.7 V @ 20 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | |||
|
G3S06503A | - | |
1550 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | Vendor Undefined | 4436-G3S06503A | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 3 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 11.5A | 181pF @ 0V, 1MHz | |||
|
G5S06510HT | - | |
1209 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | Vendor Undefined | 4436-G5S06510HT | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | -55°C ~ 175°C | 23.8A | - | |||||
 |
G3S12015P | - | |
5432 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | Vendor Undefined | 4436-G3S12015P | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 15 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 42A | 1379pF @ 0V, 1MHz | |||
|
G4S06510CT | - | |
7640 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | Vendor Undefined | 4436-G4S06510CT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 31A | 550pF @ 0V, 1MHz | |||
|
G4S12040BM | - | |
1055 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | Vendor Undefined | 4436-G4S12040BM | 1 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 64.5A (DC) | 1.6 V @ 20 A | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | |||
|
G3S17005A | - | |
9312 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | Vendor Undefined | 4436-G3S17005A | 1 | No Recovery Time > 500mA (Io) | 1700 V | 1.7 V @ 5 A | 0 ns | 50 µA @ 1700 V | -55°C ~ 175°C | 28A | 780pF @ 0V, 1MHz | |||
|
G3S06510C | - | |
3213 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | Vendor Undefined | 4436-G3S06510C | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 34A | 690pF @ 0V, 1MHz | |||
|
G5S12015L | - | |
7402 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | Vendor Undefined | 4436-G5S12015L | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 15 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 55A | 1370pF @ 0V, 1MHz | |||
|
G5S06510PT | - | |
4718 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | Vendor Undefined | 4436-G5S06510PT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 39A | 645pF @ 0V, 1MHz | |||
|
G5S12008PM | - | |
2245 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | Vendor Undefined | 4436-G5S12008PM | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 8 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 27.9A | 550pF @ 0V, 1MHz | |||
|
G3S065100P | - | |
2794 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | Vendor Undefined | 4436-G3S065100P | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 40 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 40A | 13500pF @ 0V, 1MHz | |||
|
G5S12002C | - | |
6074 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | Vendor Undefined | 4436-G5S12002C | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 2 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 8.8A | 170pF @ 0V, 1MHz | |||
|
G3S12002D | - | |
1785 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiC (Silicon Carbide) Schottky | TO-263 | Vendor Undefined | 4436-G3S12002D | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 2 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 7A | 136pF @ 0V, 1MHz | |||
|
G5S12020B | - | |
1876 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | Vendor Undefined | 4436-G5S12020B | 1 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 33A (DC) | 1.7 V @ 10 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | |||
 |
G4S06510QT | - | |
7248 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | 4-PowerTSFN | SiC (Silicon Carbide) Schottky | 4-DFN (8x8) | Vendor Undefined | 4436-G4S06510QT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 44.9A | 550pF @ 0V, 1MHz | |||
|
G3S12010B | - | |
1370 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | Vendor Undefined | 4436-G3S12010B | 1 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 39A (DC) | 1.7 V @ 5 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | |||
|
G5S12030BM | - | |
9456 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | Vendor Undefined | 4436-G5S12030BM | 1 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 55A (DC) | 1.7 V @ 15 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | |||
|
G3S06510P | - | |
9563 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | Vendor Undefined | 4436-G3S06510P | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 32.8A | 690pF @ 0V, 1MHz |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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