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Discrete Semiconductor Products(191)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Mounting Type | Package / Case | Technology | Supplier Device Package | REACH Status | Other Names | Standard Package | Speed | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
G3S12002C | - |  |
5481 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | Vendor Undefined | 4436-G3S12002C | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 2 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 8.8A | 170pF @ 0V, 1MHz | |||
 |
G3S06550P | - | |
8226 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | Vendor Undefined | 4436-G3S06550P | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 50 A | 0 ns | 100 µA @ 650 V | -55°C ~ 175°C | 105A | 4400pF @ 0V, 1MHz | |||
 |
G3S12010A | - | |
3289 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | Vendor Undefined | 4436-G3S12010A | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 34.8A | 770pF @ 0V, 1MHz | |||
|
G3S17005P | - | |
4173 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | Vendor Undefined | 4436-G3S17005P | 1 | No Recovery Time > 500mA (Io) | 1700 V | 1.7 V @ 5 A | 0 ns | 50 µA @ 1700 V | -55°C ~ 175°C | 29.5A | 780pF @ 0V, 1MHz | |||
|
G3S17010A | - | |
5569 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | Vendor Undefined | 4436-G3S17010A | 1 | No Recovery Time > 500mA (Io) | 1700 V | 1.7 V @ 10 A | 0 ns | 100 µA @ 1700 V | -55°C ~ 175°C | 24A | 1500pF @ 0V, 1MHz | |||
|
G4S12020P | - | |
4931 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Vendor Undefined | 4436-G4S12020P | 1 | |||||||||||||||
|
G4S12010PM | - | |
8391 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | Vendor Undefined | 4436-G4S12010PM | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | -55°C ~ 175°C | 33.2A | - | |||||
 |
G5S12020BM | - | |
5996 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | Vendor Undefined | 4436-G5S12020BM | 1 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 33A (DC) | 1.7 V @ 10 A | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | |||
|
GAS06520L | - | |
2459 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | Vendor Undefined | 4436-GAS06520L | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 20 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 66.5A | 1390pF @ 0V, 1MHz | |||
 |
G3S06503D | - | |
1675 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiC (Silicon Carbide) Schottky | TO-263 | Vendor Undefined | 4436-G3S06503D | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 3 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 11.5A | 181pF @ 0V, 1MHz | |||
 |
G3S12015H | - | |
9480 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | Vendor Undefined | 4436-G3S12015H | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 15 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 21A | 1700pF @ 0V, 1MHz | |||
|
G3S06550PM | - | |
4844 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | Vendor Undefined | 4436-G3S06550PM | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 50 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 130A | 4400pF @ 0V, 1MHz | |||
|
G4S06506CT | - | |
2464 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | Vendor Undefined | 4436-G4S06506CT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.8 V @ 6 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 13.8A | 181pF @ 0V, 1MHz | |||
|
G3S12020B | - | |
4697 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | Vendor Undefined | 4436-G3S12020B | 1 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 37A (DC) | 1.7 V @ 10 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | |||
|
G3S06508A | - | |
8478 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | Vendor Undefined | 4436-G3S06508A | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 8 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 25.5A | 550pF @ 0V, 1MHz | |||
|
G3S12010D | - | |
7559 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiC (Silicon Carbide) Schottky | TO-263 | Vendor Undefined | 4436-G3S12010D | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 33.2A | 765pF @ 0V, 1MHz | |||
|
G4S06508DT | - | |
1344 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiC (Silicon Carbide) Schottky | TO-263 | Vendor Undefined | 4436-G4S06508DT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 8 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 24A | 395pF @ 0V, 1MHz | |||
|
GAS06520A | - | |
3596 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | Vendor Undefined | 4436-GAS06520A | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 20 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 66A | 1390pF @ 0V, 1MHz | |||
|
G5S06505AT | - | |
3018 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | Vendor Undefined | 4436-G5S06505AT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 5 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 24.5A | 395pF @ 0V, 1MHz | |||
|
G3S06506D | - | |
8845 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiC (Silicon Carbide) Schottky | TO-263 | Vendor Undefined | 4436-G3S06506D | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 6 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 22.5A | 424pF @ 0V, 1MHz | |||
|
G3S12015L | - | |
4372 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | Vendor Undefined | 4436-G3S12015L | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 15 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 55A | 1700pF @ 0V, 1MHz | |||
|
G3S06508B | - | |
7094 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | Vendor Undefined | 4436-G3S06508B | 1 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 14A (DC) | 1.7 V @ 8 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | |||
|
G5S12002A | - | |
7926 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | Vendor Undefined | 4436-G5S12002A | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 2 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 10A | 170pF @ 0V, 1MHz | |||
|
G3S06504A | - | |
5918 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | Vendor Undefined | 4436-G3S06504A | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 4 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 11.5A | 181pF @ 0V, 1MHz | |||
|
G3S12005C | - | |
6880 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | Vendor Undefined | 4436-G3S12005C | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 5 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 34A | 475pF @ 0V, 1MHz | |||
|
G3S17020B | - | |
7595 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | Vendor Undefined | 4436-G3S17020B | 1 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1700 V | 24A (DC) | 1.7 V @ 10 A | 0 ns | 100 µA @ 1700 V | -55°C ~ 175°C | |||
|
G3S06530A | - | |
5431 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | Vendor Undefined | 4436-G3S06530A | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 30 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 110A | 2150pF @ 0V, 1MHz | |||
|
G4S06515DT | - | |
1010 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiC (Silicon Carbide) Schottky | TO-263 | Vendor Undefined | 4436-G4S06515DT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 15 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 38A | 645pF @ 0V, 1MHz | |||
|
G5S06508HT | - | |
1465 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | Vendor Undefined | 4436-G5S06508HT | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 8 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 20A | 550pF @ 0V, 1MHz | |||
|
G3S12005D | - | |
7521 | 0.00000000 | Global Power Technology Co. Ltd | - | Bulk | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiC (Silicon Carbide) Schottky | TO-263 | Vendor Undefined | 4436-G3S12005D | 1 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 5 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 34A | 475pF @ 0V, 1MHz |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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