- RFQ
- BOM
-
Contact Us
Tel: +86-0755-83501315
Email: sales@sic-components.com
- Chinese
- English
- French
- German
- Portuguese
- Spanish
- Russian
- Japanese
- Korean
- Arabic
- Irish
- Greek
- Turkish
- Italian
- Danish
- Romanian
- Indonesian
- Czech
- Afrikaans
- Swedish
- Polish
- Basque
- Catalan
- Esperanto
- Hindi
- Lao
- Albanian
- Amharic
- Armenian
- Azerbaijani
- Belarusian
- Bengali
- Bosnian
- Bulgarian
- Cebuano
- Chichewa
- Corsican
- Croatian
- Dutch
- Estonian
- Filipino
- Finnish
- Frisian
- Galician
- Georgian
- Gujarati
- Haitian
- Hausa
- Hawaiian
- Hebrew
- Hmong
- Hungarian
- Icelandic
- Igbo
- Javanese
- Kannada
- Kazakh
- Khmer
- Kurdish
- Kyrgyz
- Latin
- Latvian
- Lithuanian
- Luxembou..
- Macedonian
- Malagasy
- Malay
- Malayalam
- Maltese
- Maori
- Marathi
- Mongolian
- Burmese
- Nepali
- Norwegian
- Pashto
- Persian
- Punjabi
- Serbian
- Sesotho
- Sinhala
- Slovak
- Slovenian
- Somali
- Samoan
- Scots Gaelic
- Shona
- Sindhi
- Sundanese
- Swahili
- Tajik
- Tamil
- Telugu
- Thai
- Ukrainian
- Urdu
- Uzbek
- Vietnamese
- Welsh
- Xhosa
- Yiddish
- Yoruba
- Zulu
- Kinyarwanda
- Tatar
- Oriya
- Turkmen
- Uyghur
Transistors(102018)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Input | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Test Condition | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Current - Collector Cutoff (Max) | NTC Thermistor | Input Capacitance (Cies) @ Vce | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRF9333PBF | - |  |
1732 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Discontinued at SIC | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | 8-SO | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | SP001554504 | EAR99 | 8541.29.0095 | 95 | P-Channel | 30 V | 9.2A (Ta) | 4.5V, 10V | 19.4mOhm @ 9.2A, 10V | 2.4V @ 25µA | 38 nC @ 10 V | ±20V | 1110 pF @ 25 V | - | 2.5W (Ta) | |||||||||||||||||||||||
 |
IPD30N03S2L07ATMA1 | - | |
1531 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tape & Reel (TR) | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IPD30N | MOSFET (Metal Oxide) | PG-TO252-3-11 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 30A (Tc) | 4.5V, 10V | 6.7mOhm @ 30A, 10V | 2V @ 85µA | 68 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 136W (Tc) | ||||||||||||||||||||||||
 |
AON6406 | - | |
8796 | 0.00000000 | Alpha & Omega Semiconductor Inc. | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSMD, Flat Leads | AON640 | MOSFET (Metal Oxide) | 8-DFN (5x6) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 25A (Ta), 170A (Tc) | 4.5V, 10V | 2.3mOhm @ 20A, 10V | 2.4V @ 250µA | 100 nC @ 10 V | ±20V | 5200 pF @ 15 V | - | 2.3W (Ta), 110W (Tc) | |||||||||||||||||||||||
 |
TPCA8A01-H(TE12L,Q | - | |
3926 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCA8A01 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 36A (Ta) | 4.5V, 10V | 5.6mOhm @ 18A, 10V | 2.3V @ 1mA | 35 nC @ 10 V | ±20V | 1970 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | |||||||||||||||||||||||||
 |
YJS8205B | 0.0670 | |
300 | 0.00000000 | Yangjie Technology | - | Tape & Reel (TR) | Active | - | RoHS Compliant | REACH Unaffected | 4617-YJS8205BTR | EAR99 | 3,000 | |||||||||||||||||||||||||||||||||||||||||
 |
RN4987,LXHF(CT | 0.4400 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4987 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz, 200MHz | 10kOhms | 47kOhms | ||||||||||||||||||||||||||||
 |
2SD1766-Q | 0.0400 | |
100 | 0.00000000 | Yangjie Technology | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | 500 mW | SOT-89 | - | RoHS Compliant | REACH Unaffected | 4617-2SD1766-QTR | EAR99 | 1,000 | 32 V | 1 A | 1µA (ICBO) | NPN | 800mV @ 200mA, 2A | 120 @ 500mA, 3V | 100MHz | |||||||||||||||||||||||||||||
 |
RM5N40S2 | 0.0690 | |
2036 | 0.00000000 | Rectron USA | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | SOT-23 | download | ROHS3 Compliant | 1 (Unlimited) | 2516-RM5N40S2TR | 8541.10.0080 | 30,000 | N-Channel | 40 V | 5A (Ta) | 4.5V, 10V | 32mOhm @ 4A, 10V | 2.5V @ 250µA | ±20V | 593 pF @ 15 V | - | 1.25W (Ta) | ||||||||||||||||||||||||||
 |
NTR4502PT3 | - | |
4687 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | NTR450 | MOSFET (Metal Oxide) | SOT-23-3 (TO-236) | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 10,000 | P-Channel | 30 V | 1.13A (Ta) | 4.5V, 10V | 200mOhm @ 1.95A, 10V | 3V @ 250µA | 10 nC @ 10 V | ±20V | 200 pF @ 15 V | - | 400mW (Tj) | |||||||||||||||||||||||
 |
APT40GF120JRD | 42.4400 | |
19 | 0.00000000 | Microchip Technology | - | Tube | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | APT40 | 390 W | Standard | SOT-227 (ISOTOP®) | - | 1 (Unlimited) | REACH Unaffected | 150-APT40GF120JRD | EAR99 | 8541.29.0095 | 1 | Single | - | 1200 V | 60 A | 3.4V @ 15V, 50A | 500 µA | No | 3.45 nF @ 25 V | |||||||||||||||||||||||||
 |
RM135N100HD | 0.9400 | |
5381 | 0.00000000 | Rectron USA | - | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | TO-263-2 | download | ROHS3 Compliant | 1 (Unlimited) | 2516-RM135N100HDTR | 8541.10.0080 | 8,000 | N-Channel | 100 V | 135A (Tc) | 10V | 4.6mOhm @ 60A, 10V | 4.5V @ 250µA | ±20V | 6400 pF @ 50 V | - | 210W (Tc) | ||||||||||||||||||||||||||
 |
SIHA155N60EF-GE3 | 3.6600 | |
8042 | 0.00000000 | Vishay Siliconix | EF | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | SIHA155 | MOSFET (Metal Oxide) | TO-220 Full Pack | download | 1 (Unlimited) | 742-SIHA155N60EF-GE3 | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 600 V | 9A (Tc) | 10V | 89mOhm @ 3.7A, 10V | 5V @ 250µA | 38 nC @ 10 V | ±20V | 1465 pF @ 100 V | - | 33W (Tc) | ||||||||||||||||||||||||
|
RAQ045P01MGTCR | 0.1693 | |
7544 | 0.00000000 | Rohm Semiconductor | * | Tape & Reel (TR) | Not For New Designs | RAQ045 | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | |||||||||||||||||||||||||||||||||||||||
 |
IRFR7746TRPBF | - | |
8932 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | 176-LQFP | MOSFET (Metal Oxide) | 176-LQFP (24x24) | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 75 V | 56A (Tc) | 6V, 10V | 11.2mOhm @ 35A, 10V | 3.7V @ 100µA | 89 nC @ 10 V | ±20V | 3107 pF @ 25 V | - | 99W (Tc) | |||||||||||||||||||||||||||
 |
STP26N60M2 | 1.5973 | |
4829 | 0.00000000 | STMicroelectronics | MDmesh™ M2 | Tube | Active | - | Through Hole | TO-220-3 | STP26 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 600 V | 20A (Tc) | 10V | - | - | ±25V | - | 169W (Tc) | |||||||||||||||||||||||||
 |
DMC2710UDW-13 | 0.0565 | |
2152 | 0.00000000 | Diodes Incorporated | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | DMC2710 | MOSFET (Metal Oxide) | 290mW (Ta) | SOT-363 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | DMC2710UDW-13DI | EAR99 | 8541.21.0095 | 10,000 | N and P-Channel Complementary | 20V | 750mA (Ta), 600mA (Ta) | 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V | 1V @ 250µA | 0.6nC @ 4.5V, 0.7nC @ 4.5V | 42pF @ 16V, 49pF @ 16V | - | ||||||||||||||||||||||||
 |
R6004ENXC7G | 2.5300 | |
1 | 0.00000000 | Rohm Semiconductor | - | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | R6004 | MOSFET (Metal Oxide) | TO-220FM | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 846-R6004ENXC7G | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 4A (Tc) | 10V | 980mOhm @ 1.5A, 10V | 4V @ 1mA | 15 nC @ 10 V | ±20V | 250 pF @ 25 V | - | 40W (Tc) | ||||||||||||||||||||||
 |
2PC4081R/ZL115 | 0.0200 | |
1 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | download | Not applicable | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.21.0075 | 3,000 | ||||||||||||||||||||||||||||||||||||||||
 |
IPB60R600P6ATMA1 | - | |
4354 | 0.00000000 | Infineon Technologies | CoolMOS™ P6 | Tape & Reel (TR) | Discontinued at SIC | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IPB60R | MOSFET (Metal Oxide) | PG-TO263-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | SP001313874 | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 4.5V @ 200µA | 12 nC @ 10 V | ±20V | 557 pF @ 100 V | - | 63W (Tc) | ||||||||||||||||||||||
|
MCH6631-TL-E | - | |
4966 | 0.00000000 | Sanyo | * | Bulk | Obsolete | - | RoHS non-compliant | Vendor Undefined | 2156-MCH6631-TL-E-600057 | 1 | ||||||||||||||||||||||||||||||||||||||||||
 |
UMB9N | 0.0300 | |
300 | 0.00000000 | Yangjie Technology | - | Tape & Reel (TR) | Active | - | RoHS Compliant | REACH Unaffected | 4617-UMB9NTR | EAR99 | 3,000 | |||||||||||||||||||||||||||||||||||||||||
|
BC556B-BP | - | |
4265 | 0.00000000 | Micro Commercial Co | - | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | BC556 | 625 mW | TO-92 | download | ROHS3 Compliant | 353-BC556B-BP | EAR99 | 8541.21.0075 | 1 | 65 V | 100 mA | 100nA | PNP | 650mV @ 5mA, 100mA | 180 @ 2mA, 5V | 150MHz | ||||||||||||||||||||||||||||
 |
RJP65T43DPQ-A0#T2 | 3.6300 | |
878 | 0.00000000 | Renesas Electronics America Inc | - | Tube | Active | 175°C (TJ) | Through Hole | TO-247-3 | RJP65T43 | Standard | 150 W | TO-247A | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | -1161-RJP65T43DPQ-A0#T2 | EAR99 | 8541.29.0095 | 25 | 400V, 20A, 10Ohm, 15V | Trench | 650 V | 60 A | 2.4V @ 15V, 20A | 170µJ (on), 130µJ (off) | 69 nC | 35ns/105ns | ||||||||||||||||||||||||
 |
2N4125RLRA | 0.0200 | |
9160 | 0.00000000 | onsemi | * | Bulk | Active | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 1,000 | ||||||||||||||||||||||||||||||||||||||||
 |
RJH3047DPK-80#T2 | 4.9700 | |
4 | 0.00000000 | Renesas Electronics America Inc | * | Bulk | Active | download | Not applicable | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.29.0095 | 1 | ||||||||||||||||||||||||||||||||||||||||
 |
IPP80P04P407AKSA1 | - | |
8186 | 0.00000000 | Infineon Technologies | Automotive, AEC-Q101, OptiMOS™ | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | IPP80P | MOSFET (Metal Oxide) | PG-TO220-3-1 | download | 1 (Unlimited) | REACH Unaffected | SP000842044 | EAR99 | 8541.29.0095 | 500 | P-Channel | 40 V | 80A (Tc) | 10V | 7.7mOhm @ 80A, 10V | 4V @ 150µA | 89 nC @ 10 V | ±20V | 6085 pF @ 25 V | - | 88W (Tc) | |||||||||||||||||||||||
|
EFC4622R-R-W-E-TR | - | |
8486 | 0.00000000 | onsemi | - | Bulk | Obsolete | - | - | - | EFC4622 | - | - | - | - | Not Applicable | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | - | - | - | - | - | - | - | - | ||||||||||||||||||||||||||
 |
JANS2N3501L | 63.4204 | |
6109 | 0.00000000 | Microchip Technology | Military, MIL-PRF-19500/366 | Bulk | Active | -65°C ~ 200°C (TJ) | Through Hole | TO-205AA, TO-5-3 Metal Can | 1 W | TO-5 | - | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | 150 V | 300 mA | 10µA (ICBO) | NPN | 400mV @ 15mA, 150mA | 100 @ 150mA, 10V | - | ||||||||||||||||||||||||||||||
 |
BUK9E04-40A,127 | - | |
7608 | 0.00000000 | NXP USA Inc. | Automotive, AEC-Q101, TrenchMOS™ | Bulk | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK | download | EAR99 | 8541.29.0095 | 84 | N-Channel | 40 V | 75A (Tc) | 4.3V, 10V | 4mOhm @ 25A, 10V | 2V @ 1mA | 128 nC @ 5 V | ±15V | 8260 pF @ 25 V | - | 300W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
Wishlist (0 Items)