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Transistors(102018)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Frequency | Technology | Power - Max | Input | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Test Condition | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Reverse Recovery Time (trr) | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Voltage - Test | Current - Collector Cutoff (Max) | NTC Thermistor | Input Capacitance (Cies) @ Vce | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Noise Figure (dB Typ @ f) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
JANSL2N3440UA | - |  |
9350 | 0.00000000 | Microchip Technology | Military, MIL-PRF-19500/368 | Bulk | Active | -65°C ~ 200°C (TJ) | Surface Mount | 4-SMD, No Lead | 800 mW | UA | - | ROHS3 Compliant | REACH Unaffected | 150-JANSL2N3440UA | EAR99 | 8541.21.0095 | 1 | 250 V | 1 A | 2µA | NPN | 500mV @ 4mA, 50mA | 40 @ 20mA, 10V | - | |||||||||||||||||||||||||||||||||||||
 |
SIGC14T60NCX7SA2 | - | |
7782 | 0.00000000 | Infineon Technologies | - | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | Die | SIGC14 | Standard | Die | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | OBSOLETE | 1 | 300V, 15A, 18Ohm, 15V | NPT | 600 V | 15 A | 45 A | 2.5V @ 15V, 15A | - | 21ns/110ns | ||||||||||||||||||||||||||||||||||||
 |
MJD44H11J | 0.6500 | |
4 | 0.00000000 | Nexperia USA Inc. | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MJD44H11 | 1.75 W | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0075 | 2,500 | 80 V | 8 A | 1µA | NPN | 1V @ 400mA, 8A | 60 @ 2A, 1V | 160MHz | ||||||||||||||||||||||||||||||||||||
 |
SSM6P40TU,LF | 0.4800 | |
3853 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6P40 | MOSFET (Metal Oxide) | 500mW (Ta) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 P-Channel (Dual) | 30V | 1.4A (Ta) | 226mOhm @ 1A, 10V | 2V @ 1mA | 2.9nC @ 10V | 120pF @ 15V | Logic Level Gate, 4V Drive | |||||||||||||||||||||||||||||||||||
 |
FQD3N40TF | 0.3700 | |
26 | 0.00000000 | Fairchild Semiconductor | QFET® | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252, (D-Pak) | download | ROHS3 Compliant | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 400 V | 2A (Tc) | 10V | 3.4Ohm @ 1A, 10V | 5V @ 250µA | 7.5 nC @ 10 V | ±30V | 230 pF @ 25 V | - | 2.5W (Ta), 30W (Tc) | |||||||||||||||||||||||||||||||||||
 |
TIP115 | 1.0000 | |
4881 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Active | 150°C (TJ) | Through Hole | TO-220-3 | TIP115 | 2 W | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | 60 V | 2 A | 2mA | PNP - Darlington | 2.5V @ 8mA, 2A | 1000 @ 1A, 4V | - | ||||||||||||||||||||||||||||||||||||
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KSC1008GTA | - | |
6383 | 0.00000000 | onsemi | - | Cut Tape (CT) | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | KSC1008 | 800 mW | TO-92-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 2,000 | 60 V | 700 mA | 100nA (ICBO) | NPN | 400mV @ 50mA, 500mA | 200 @ 500mA, 2V | 50MHz | ||||||||||||||||||||||||||||||||||||
 |
NTE395 | 4.5500 | |
104 | 0.00000000 | NTE Electronics, Inc | - | Bag | Active | 200°C (TJ) | Through Hole | TO-206AF, TO-72-4 Metal Can | 225mW | TO-72 | download | RoHS non-compliant | 2368-NTE395 | EAR99 | 8541.21.0095 | 1 | 16dB | 25V | 50mA | PNP | 20 @ 10mA, 10V | 2.3GHz | 2.5dB ~ 4dB @ 200MHz ~ 800MHz | ||||||||||||||||||||||||||||||||||||||
 |
CGHV22100F | - | |
9014 | 0.00000000 | Wolfspeed, Inc. | GaN | Tube | Obsolete | 125 V | 440162 | 1.8GHz ~ 2.2GHz | HEMT | 440162 | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1 | 6A | 500 mA | 100W | 20dB | - | 50 V | ||||||||||||||||||||||||||||||||||||||||
|
APTGT100DDA60T3G | - | |
5509 | 0.00000000 | Microsemi Corporation | - | Bulk | Obsolete | -40°C ~ 175°C (TJ) | Chassis Mount | SP3 | 340 W | Standard | SP3 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | Dual Boost Chopper | Trench Field Stop | 600 V | 150 A | 1.9V @ 15V, 100A | 250 µA | Yes | 6.1 nF @ 25 V | ||||||||||||||||||||||||||||||||||||
|
NXH80T120L2Q0PG | - | |
5569 | 0.00000000 | onsemi | - | Tray | Obsolete | Press Fit | Module | NXH80T | 146 W | Standard | Q0Pack180AA | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | NXH80T120L2Q0PGOS | EAR99 | 8541.29.0095 | 24 | T-Type | Trench Field Stop | 1200 V | 65 A | 2.8V @ 15V, 80A | 100 µA | Yes | 1.99 nF @ 20 V | ||||||||||||||||||||||||||||||||||
 |
2N2907AL | 3.9368 | |
9887 | 0.00000000 | Microchip Technology | - | Bulk | Active | -65°C ~ 200°C (TJ) | Through Hole | TO-206AA, TO-18-3 Metal Can | 2N2907 | 500 mW | TO-18 | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 1 | 60 V | 600 mA | 50nA | PNP | 1.6V @ 50mA, 500mA | 100 @ 150mA, 10V | - | ||||||||||||||||||||||||||||||||||||
|
APTM120DDA57T3G | - | |
9838 | 0.00000000 | Microsemi Corporation | - | Bulk | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | APTM120 | MOSFET (Metal Oxide) | 390W | SP3 | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1 | 2 N-Channel (Dual) | 1200V (1.2kV) | 17A | 684mOhm @ 8.5A, 10V | 5V @ 2.5mA | 187nC @ 10V | 5155pF @ 25V | - | ||||||||||||||||||||||||||||||||||||
 |
NX138BKMYL | 0.2800 | |
21 | 0.00000000 | Nexperia USA Inc. | TrenchMOS™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | SC-101, SOT-883 | NX138 | MOSFET (Metal Oxide) | SOT-883 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 10,000 | N-Channel | 60 V | 380mA (Ta) | 2.3Ohm @ 380mA, 10V | 1.5V @ 250µA | 0.7 nC @ 10 V | ±20V | 20 pF @ 30 V | - | 380mW (Ta), 2.8W (Tc) | |||||||||||||||||||||||||||||||||
 |
FQA13N80 | - | |
2810 | 0.00000000 | onsemi | QFET® | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | FQA1 | MOSFET (Metal Oxide) | TO-3PN | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 800 V | 12.6A (Tc) | 10V | 750mOhm @ 6.3A, 10V | 5V @ 250µA | 88 nC @ 10 V | ±30V | 3500 pF @ 25 V | - | 300W (Tc) | |||||||||||||||||||||||||||||||||
|
RGW80TS65EHRC11 | 8.0200 | |
8016 | 0.00000000 | Rohm Semiconductor | - | Tube | Active | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | RGW80 | Standard | 214 W | TO-247N | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 846-RGW80TS65EHRC11 | EAR99 | 8541.29.0095 | 450 | 400V, 20A, 10Ohm, 15V | 86 ns | Trench Field Stop | 650 V | 80 A | 160 A | 1.9V @ 15V, 40A | 110 nC | 43ns/148ns | ||||||||||||||||||||||||||||||||
 |
APT5010JFLL | - | |
1166 | 0.00000000 | Microchip Technology | POWER MOS 7® | Tube | Obsolete | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | download | RoHS Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 20 | N-Channel | 500 V | 41A (Tc) | 100mOhm @ 20.5A, 10V | 5V @ 2.5mA | 95 nC @ 10 V | 4360 pF @ 25 V | - | |||||||||||||||||||||||||||||||||||||
 |
G09P02L | 0.4900 | |
8 | 0.00000000 | Goford Semiconductor | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | SOT-23-3 | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 9A (Tc) | 2.5V, 4.5V | 23mOhm @ 1A, 4.5V | 1.2V @ 250µA | 15 nC @ 4.5 V | ±12V | 620 pF @ 10 V | - | 2.2W (Tc) | |||||||||||||||||||||||||||||||||
|
IRFU024ATU | - | |
1398 | 0.00000000 | Fairchild Semiconductor | * | Bulk | Active | IRFU024 | - | - | Not applicable | 1 (Unlimited) | Vendor Undefined | 1 | - | ||||||||||||||||||||||||||||||||||||||||||||||||
 |
S8550-D-BP | - | |
3501 | 0.00000000 | Micro Commercial Co | - | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | S8050 | 625 mW | TO-92 | download | RoHS Compliant | 1 (Unlimited) | 353-S8550-D-BP | EAR99 | 8541.21.0075 | 1,000 | 25 V | 500 mA | 200nA | PNP | 600mV @ 50mA, 500mA | 160 @ 50mA, 1V | 150MHz | ||||||||||||||||||||||||||||||||||||
 |
MCH3383-TL-H | 0.1800 | |
47 | 0.00000000 | Sanyo | - | Bulk | Active | 150°C (TJ) | Surface Mount | 3-SMD, Flat Lead | MOSFET (Metal Oxide) | SC-70FL/MCPH3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | EAR99 | 0000.00.0000 | 1 | P-Channel | 12 V | 3.5A (Ta) | 69mOhm @ 1.5A, 2.5V | 800mV @ 1mA | 6.2 nC @ 2.5 V | ±5V | 1010 pF @ 6 V | - | 1W (Ta) | ||||||||||||||||||||||||||||||||||
 |
NSV60200DMTWTBG | - | |
8310 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | NSV60200 | 6-WDFN (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0075 | 3,000 | 100nA (ICBO) | 2 PNP (Dual) | 450mV @ 200mA, 2A | 150 @ 100mA, 2V | 155MHz | |||||||||||||||||||||||||||||||||||||||
 |
BC549BBK | 0.0241 | |
5126 | 0.00000000 | Diotec Semiconductor | - | Box | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | 500 mW | TO-92 | download | ROHS3 Compliant | Not Applicable | 2796-BC549BBK | 8541.21.0000 | 5,000 | 30 V | 100 mA | 15nA | NPN | 600mV @ 5mA, 100mA | 200 @ 2mA, 5V | 300MHz | ||||||||||||||||||||||||||||||||||||||
|
2C5238 | 11.8769 | |
8421 | 0.00000000 | Microchip Technology | - | Tape & Reel (TR) | Active | - | ROHS3 Compliant | REACH Unaffected | 150-2C5238 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||
|
2SC3576 | 0.0800 | |
35 | 0.00000000 | onsemi | * | Bulk | Active | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0075 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||
|
2SC5201,T6MURAF(J | - | |
3172 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC5201 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 600 V | 50 mA | 1µA (ICBO) | NPN | 1V @ 500mA, 20mA | 100 @ 20mA, 5V | - | ||||||||||||||||||||||||||||||||||||||
 |
NTTFS020N06CTAG | 1.3700 | |
3251 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerWDFN | NTTFS020 | MOSFET (Metal Oxide) | 8-WDFN (3.3x3.3) | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 60 V | 7A (Ta), 27A (Tc) | 10V | 20.3mOhm @ 4A, 10V | 4V @ 20µA | 5.8 nC @ 10 V | ±20V | 355 pF @ 30 V | - | 2.5W (Ta), 31W (Tc) | ||||||||||||||||||||||||||||||||
|
VS-GB200NH120N | - | |
3076 | 0.00000000 | Vishay General Semiconductor - Diodes Division | - | Bulk | Obsolete | -40°C ~ 150°C (TJ) | Chassis Mount | Double INT-A-PAK (3 + 4) | GB200 | 1562 W | Standard | Double INT-A-PAK | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | VSGB200NH120N | EAR99 | 8541.29.0095 | 12 | Single | - | 1200 V | 420 A | 1.8V @ 15V, 200A (Typ) | 5 mA | No | 18 nF @ 25 V | |||||||||||||||||||||||||||||||||
 |
2N7002KDW_R1_00001 | 0.2500 | |
8 | 0.00000000 | Panjit International Inc. | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | 2N7002 | MOSFET (Metal Oxide) | 200mW (Ta) | SOT-363 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 60V | 115mA (Ta) | 3Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.8nC @ 4.5V | 35pF @ 25V | - | ||||||||||||||||||||||||||||||||||
 |
GT50JR21(STA1,E,S) | 4.7900 | |
6501 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | Standard | 230 W | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | 264-GT50JR21(STA1ES) | EAR99 | 8541.29.0095 | 25 | - | - | 600 V | 50 A | 100 A | 2V @ 15V, 50A | - | - |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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