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Transistors(102018)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Frequency | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Voltage - Test |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
R6014YNX3C16 | 3.7100 |  |
9832 | 0.00000000 | Rohm Semiconductor | - | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | R6014 | MOSFET (Metal Oxide) | TO-220AB | download | 1 (Unlimited) | 846-R6014YNX3C16 | 50 | N-Channel | 600 V | 14A (Tc) | 10V, 12V | 260mOhm @ 5A, 12V | 6V @ 1.4mA | 20 nC @ 10 V | ±30V | 890 pF @ 100 V | - | 132W (Tc) | |||||||||||||||
|
IPL60R095CFD7AUMA1 | - | |
8637 | 0.00000000 | Infineon Technologies | * | Bulk | Active | download | Vendor Undefined | REACH Unaffected | 2156-IPL60R095CFD7AUMA1-448 | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||
 |
IRF1407S | - | |
9780 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | *IRF1407S | EAR99 | 8541.29.0095 | 50 | N-Channel | 75 V | 100A (Tc) | 10V | 7.8mOhm @ 78A, 10V | 4V @ 250µA | 250 nC @ 10 V | ±20V | 5600 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | ||||||||||||
 |
IRF6712STRPBF | 1.4900 | |
9103 | 0.00000000 | Infineon Technologies | HEXFET® | Tape & Reel (TR) | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SQ | IRF6712 | MOSFET (Metal Oxide) | DIRECTFET™ SQ | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 4,800 | N-Channel | 25 V | 17A (Ta), 68A (Tc) | 4.5V, 10V | 4.9mOhm @ 17A, 10V | 2.4V @ 50µA | 18 nC @ 4.5 V | ±20V | 1570 pF @ 13 V | - | 2.2W (Ta), 36W (Tc) | ||||||||||||
 |
PJA3471_R1_00001 | 0.4300 | |
14 | 0.00000000 | Panjit International Inc. | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PJA3471 | MOSFET (Metal Oxide) | SOT-23 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 3757-PJA3471_R1_00001TR | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 100 V | 900mA (Ta) | 4.5V, 10V | 650mOhm @ 900mA, 10V | 2.5V @ 250µA | 8 nC @ 10 V | ±20V | 448 pF @ 15 V | - | 1.25W (Ta) | |||||||||||
 |
FQB4N80TM | 1.8900 | |
150 | 0.00000000 | onsemi | QFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | FQB4N80 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | N-Channel | 800 V | 3.9A (Tc) | 10V | 3.6Ohm @ 1.95A, 10V | 5V @ 250µA | 25 nC @ 10 V | ±30V | 880 pF @ 25 V | - | 3.13W (Ta), 130W (Tc) | ||||||||||||
 |
SP8M7TB | - | |
8394 | 0.00000000 | Rohm Semiconductor | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | SP8M7 | MOSFET (Metal Oxide) | 2W | 8-SOP | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N and P-Channel | 30V | 5A, 7A | 51mOhm @ 5A, 10V | 2.5V @ 1mA | 5.5nC @ 5V | 230pF @ 10V | Logic Level Gate | |||||||||||||||
 |
ON5157,127 | - | |
6744 | 0.00000000 | NXP USA Inc. | - | Tube | Active | Through Hole | TO-220-3 | ON5157 | - | - | TO-220AB | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 934057064127 | EAR99 | 8541.29.0095 | 50 | - | - | - | - | - | |||||||||||||||||
 |
FQPF6N80 | - | |
3461 | 0.00000000 | onsemi | QFET® | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | FQPF6 | MOSFET (Metal Oxide) | TO-220F-3 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 800 V | 3.3A (Tc) | 10V | 1.95Ohm @ 1.65A, 10V | 5V @ 250µA | 31 nC @ 10 V | ±30V | 1500 pF @ 25 V | - | 51W (Tc) | |||||||||||||
|
RFG75N05E | 7.0400 | |
18 | 0.00000000 | Harris Corporation | - | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 | download | RoHS non-compliant | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.29.0095 | 1 | N-Channel | 50 V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 400 nC @ 20 V | ±20V | - | 240W (Tc) | ||||||||||||||
|
A2T21H100-25SR3 | 94.1572 | |
1176 | 0.00000000 | NXP USA Inc. | - | Tape & Reel (TR) | Active | A2T21 | MOSFET | - | ROHS3 Compliant | Not Applicable | REACH Unaffected | 935320549128 | EAR99 | 8541.29.0075 | 250 | N-Channel | |||||||||||||||||||||||||
 |
FDB8160 | 1.7000 | |
17 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | FDB816 | MOSFET (Metal Oxide) | TO-263AB | - | Not applicable | 1 (Unlimited) | Vendor Undefined | EAR99 | 8542.39.0001 | 800 | N-Channel | 30 V | 80A (Tc) | 10V | 1.8mOhm @ 80A, 10V | 4V @ 250µA | 243 nC @ 10 V | ±20V | 11825 pF @ 15 V | - | 254W (Tc) | ||||||||||||
 |
FDAF69N25 | 2.4400 | |
1 | 0.00000000 | Fairchild Semiconductor | UniFET™ | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3 Full Pack | MOSFET (Metal Oxide) | TO-3PF | download | ROHS3 Compliant | EAR99 | 8541.29.0095 | 30 | N-Channel | 250 V | 34A (Tc) | 10V | 41mOhm @ 17A, 10V | 5V @ 250µA | 100 nC @ 10 V | ±30V | 4640 pF @ 25 V | - | 115W (Tc) | |||||||||||||||
 |
FDMS3610S | - | |
3566 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | FDMS3610 | MOSFET (Metal Oxide) | 1W | Power56 | download | EAR99 | 8542.39.0001 | 1 | 2 N-Channel (Dual) Asymmetrical | 25V | 17.5A, 30A | 5mOhm @ 17.5A, 10V | 2V @ 250µA | 26nC @ 10V | 1570pF @ 13V | Logic Level Gate | |||||||||||||||||
 |
RF1S9640 | 1.2000 | |
4 | 0.00000000 | Harris Corporation | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | RoHS non-compliant | 1 (Unlimited) | Vendor Undefined | EAR99 | 0000.00.0000 | 1 | P-Channel | 200 V | 11A (Tc) | 500mOhm @ 6A, 10V | 4V @ 250µA | 90 nC @ 10 V | ±20V | 1100 pF @ 25 V | - | 125W (Tc) | ||||||||||||||
|
DMT3020LFCL-7 | 0.1562 | |
2224 | 0.00000000 | Diodes Incorporated | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFDFN Exposed Pad | DMT3020 | MOSFET (Metal Oxide) | U-DFN1616-6 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 7.6A (Ta) | 4.5V, 10V | 20mOhm @ 9A, 10V | 3V @ 250µA | 7 nC @ 10 V | ±20V | 393 pF @ 15 V | - | 1.7W (Ta) | ||||||||||||
 |
IXFT60N25Q | - | |
1624 | 0.00000000 | IXYS | HiPerFET™ | Tube | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | IXFT60 | MOSFET (Metal Oxide) | TO-268AA | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 250 V | 60A (Tc) | 10V | 47mOhm @ 500mA, 10V | 4V @ 4mA | 180 nC @ 10 V | ±20V | 5100 pF @ 25 V | - | 360W (Tc) | ||||||||||||||
 |
FDMD85100 | - | |
1644 | 0.00000000 | onsemi | PowerTrench® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | FDMD85 | MOSFET (Metal Oxide) | 2.2W | Power56 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Half Bridge) | 100V | 10.4A | 9.9mOhm @ 10.4A, 10V | 4V @ 250µA | 31nC @ 10V | 2230pF @ 50V | - | ||||||||||||||
 |
IXFH94N30P3 | 12.8000 | |
5 | 0.00000000 | IXYS | HiPerFET™, Polar3™ | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IXFH94 | MOSFET (Metal Oxide) | TO-247 (IXTH) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | -IXFH94N30P3 | EAR99 | 8541.29.0095 | 30 | N-Channel | 300 V | 94A (Tc) | 10V | 36mOhm @ 47A, 10V | 5V @ 4mA | 102 nC @ 10 V | ±20V | 5510 pF @ 25 V | - | 1040W (Tc) | |||||||||||
|
NP110N055PUG(1)-E1-AY | - | |
3551 | 0.00000000 | Renesas Electronics America Inc | - | Tape & Reel (TR) | Obsolete | - | ROHS3 Compliant | Vendor Undefined | OBSOLETE | 0000.00.0000 | 3,000 | 110A (Tc) | |||||||||||||||||||||||||||||
 |
NDS8936 | 0.7800 | |
8 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | NDS893 | MOSFET (Metal Oxide) | 900mW | 8-SOIC | download | ROHS3 Compliant | EAR99 | 8541.21.0095 | 2,500 | 2 N-Channel (Dual) | 30V | 5.3A | 35mOhm @ 5.3A, 10V | 2.8V @ 250µA | 30nC @ 10V | 720pF @ 15V | Logic Level Gate | ||||||||||||||||
 |
SI8451DB-T2-E1 | - | |
7660 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFBGA | SI8451 | MOSFET (Metal Oxide) | 6-Micro Foot™ (1.5x1) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 10.8A (Tc) | 1.5V, 4.5V | 80mOhm @ 1A, 4.5V | 1V @ 250µA | 24 nC @ 8 V | ±8V | 750 pF @ 10 V | - | 2.77W (Ta), 13W (Tc) | ||||||||||||
 |
SIR570DP-T1-RE3 | 2.4700 | |
3731 | 0.00000000 | Vishay Siliconix | TrenchFET® Gen V | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 150 V | 19A (Ta), 77.4A (Tc) | 7.5V, 10V | 7.9mOhm @ 20A, 10V | 4V @ 250µA | 71 nC @ 10 V | ±20V | 3740 pF @ 75 V | - | 6.25W (Ta), 104W (Tc) | ||||||||||||||
 |
BSH111BKR | 0.2800 | |
53 | 0.00000000 | Nexperia USA Inc. | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | BSH111 | MOSFET (Metal Oxide) | TO-236AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 55 V | 210mA (Ta) | 4.5V | 4Ohm @ 200mA, 4.5V | 1.3V @ 250µA | 0.5 nC @ 4.5 V | ±10V | 30 pF @ 30 V | - | 302mW (Ta) | ||||||||||||
 |
IRF7210TRPBF | - | |
1310 | 0.00000000 | Infineon Technologies | HEXFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | 8-SO | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 4,000 | P-Channel | 12 V | 16A (Ta) | 2.5V, 4.5V | 7mOhm @ 16A, 4.5V | 600mV @ 500µA (Min) | 212 nC @ 5 V | ±12V | 17179 pF @ 10 V | - | 2.5W (Ta) | ||||||||||||||
 |
RMW200N03TB | 0.8400 | |
3 | 0.00000000 | Rohm Semiconductor | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | RMW200 | MOSFET (Metal Oxide) | 8-PSOP | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 20A (Ta) | 4.5V, 10V | 4.2mOhm @ 20A, 10V | 2.5V @ 1mA | 29 nC @ 10 V | ±20V | 1780 pF @ 15 V | - | 3W (Ta) | ||||||||||||
 |
BLP05M7200Y | 39.2000 | |
82 | 0.00000000 | Ampleon USA Inc. | - | Tape & Reel (TR) | Obsolete | 65 V | Surface Mount | 4-HSOPF, SOT-1138 | BLP05 | 440MHz | LDMOS | 4-HSOP | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8542.39.0001 | 100 | Dual, Common Source | - | 2 mA | 210W | 21dB | - | 28 V | |||||||||||||||
 |
FDP8D5N10C | 2.8900 | |
1777 | 0.00000000 | onsemi | PowerTrench® | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | FDP8D5 | MOSFET (Metal Oxide) | TO-220-3 | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | 2156-FDP8D5N10C-488 | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 76A (Tc) | 10V | 8.5mOhm @ 76A, 10V | 4V @ 130µA | 34 nC @ 10 V | ±20V | 2475 pF @ 50 V | - | 2.4W (Ta), 107W (Tc) | |||||||||||
|
CGH35060P2 | 185.1202 | |
7457 | 0.00000000 | Wolfspeed, Inc. | - | Tray | Not For New Designs | 120 V | Surface Mount | 440206 | 3.1GHz ~ 3.5GHz | GaN HEMT | 440206 | - | 1697-CGH35060P2 | 50 | N-Channel | - | 200 mA | 60W | 11.5dB | - | 28 V | ||||||||||||||||||||
 |
2SK4151TZ-E | - | |
1291 | 0.00000000 | Renesas Electronics America Inc | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | MOSFET (Metal Oxide) | TO-92 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 2,500 | N-Channel | 150 V | 1A (Ta) | 2.5V, 4V | 1.95Ohm @ 500mA, 4V | - | 3.5 nC @ 4 V | ±10V | 98 pF @ 10 V | - | 750mW (Ta) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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