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Transistors(102018)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | ECCN | HTSUS | Standard Package | FET Type | Test Condition | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Reverse Recovery Time (trr) | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Gate Charge | Td (on/off) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RTL035N03TR | 0.6400 |  |
5 | 0.00000000 | Rohm Semiconductor | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | RTL035 | MOSFET (Metal Oxide) | TUMT6 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 3.5A (Ta) | 2.5V, 4.5V | 56mOhm @ 3.5A, 4.5V | 1.5V @ 1mA | 6.4 nC @ 4.5 V | ±12V | 350 pF @ 10 V | - | 1W (Ta) | |||||||||||||
 |
US5U2TR | 0.2512 | |
6259 | 0.00000000 | Rohm Semiconductor | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-SMD (5 Leads), Flat Lead | US5U2 | MOSFET (Metal Oxide) | TUMT5 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 1.4A (Ta) | 4V, 10V | 240mOhm @ 1.4A, 10V | 2.5V @ 1mA | 2 nC @ 5 V | ±20V | 70 pF @ 10 V | Schottky Diode (Isolated) | 1W (Ta) | |||||||||||||
 |
STW11NM80 | 5.8800 | |
6851 | 0.00000000 | STMicroelectronics | MDmesh™ | Tube | Active | -65°C ~ 150°C (TJ) | Through Hole | TO-247-3 | STW11 | MOSFET (Metal Oxide) | TO-247-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 800 V | 11A (Tc) | 10V | 400mOhm @ 5.5A, 10V | 5V @ 250µA | 43.6 nC @ 10 V | ±30V | 1630 pF @ 25 V | - | 150W (Tc) | |||||||||||||
 |
APT20GT60BRG | - | |
7819 | 0.00000000 | Microchip Technology | Thunderbolt IGBT® | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | APT20GT60 | Standard | 174 W | TO-247 [B] | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | 400V, 20A, 5Ohm, 15V | NPT | 600 V | 43 A | 80 A | 2.5V @ 15V, 20A | 215µJ (on), 245µJ (off) | 100 nC | 8ns/80ns | ||||||||||||||
 |
APT20M38SVRG | 14.3500 | |
9107 | 0.00000000 | Microchip Technology | POWER MOS V® | Tube | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | APT20M38 | MOSFET (Metal Oxide) | D3 [S] | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 200 V | 67A (Tc) | 10V | 38mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | ±30V | 6120 pF @ 25 V | - | 370W (Tc) | |||||||||||||
|
APT20N60BC3G | - | |
3471 | 0.00000000 | Microsemi Corporation | CoolMOS™ | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 600 V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114 nC @ 10 V | ±20V | 2440 pF @ 25 V | - | 208W (Tc) | |||||||||||||||
 |
APT29F100L | 13.8000 | |
5969 | 0.00000000 | Microchip Technology | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | APT29F100 | MOSFET (Metal Oxide) | TO-264 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 1000 V | 30A (Tc) | 10V | 460mOhm @ 16A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8500 pF @ 25 V | - | 1040W (Tc) | |||||||||||||
|
APT33GF120LRDQ2G | - | |
7682 | 0.00000000 | Microchip Technology | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | APT33GF120 | Standard | 357 W | TO-264 [L] | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 25 | 800V, 25A, 4.3Ohm, 15V | NPT | 1200 V | 64 A | 75 A | 3V @ 15V, 25A | 1.315mJ (on), 1.515mJ (off) | 170 nC | 14ns/185ns | |||||||||||||||
 |
APT35GP120B2DQ2G | - | |
2948 | 0.00000000 | Microchip Technology | POWER MOS 7® | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | APT35GP120 | Standard | 543 W | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | 600V, 35A, 4.3Ohm, 15V | PT | 1200 V | 96 A | 140 A | 3.9V @ 15V, 35A | 750µJ (on), 680µJ (off) | 150 nC | 16ns/95ns | |||||||||||||||
|
APT41M80L | 14.2700 | |
9074 | 0.00000000 | Microchip Technology | POWER MOS 8™ | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | APT41M80 | MOSFET (Metal Oxide) | TO-264 [L] | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 800 V | 43A (Tc) | 10V | 210mOhm @ 20A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8070 pF @ 25 V | - | 1040W (Tc) | |||||||||||||
|
APT43M60B2 | 12.7400 | |
7066 | 0.00000000 | Microchip Technology | POWER MOS 8™ | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | APT43M60 | MOSFET (Metal Oxide) | T-MAX™ [B2] | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 600 V | 45A (Tc) | 10V | 150mOhm @ 21A, 10V | 5V @ 2.5mA | 215 nC @ 10 V | ±30V | 8590 pF @ 25 V | - | 780W (Tc) | |||||||||||||
|
APT44F80B2 | 22.5900 | |
9224 | 0.00000000 | Microchip Technology | POWER MOS 8™ | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | APT44F80 | MOSFET (Metal Oxide) | T-MAX™ [B2] | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 800 V | 47A (Tc) | 10V | 210mOhm @ 24A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9330 pF @ 25 V | - | 1135W (Tc) | |||||||||||||
|
APT5016BFLLG | 16.4800 | |
1814 | 0.00000000 | Microchip Technology | POWER MOS 7® | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | APT5016 | MOSFET (Metal Oxide) | TO-247 [B] | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 500 V | 30A (Tc) | 10V | 160mOhm @ 15A, 10V | 5V @ 1mA | 72 nC @ 10 V | ±30V | 2833 pF @ 25 V | - | 329W (Tc) | |||||||||||||
|
APT30GT60BRDQ2G | - | |
5717 | 0.00000000 | Microchip Technology | Thunderbolt IGBT® | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | APT30GT60 | Standard | 250 W | TO-247 [B] | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | 400V, 30A, 10Ohm, 15V | 22 ns | NPT | 600 V | 64 A | 110 A | 2.5V @ 15V, 30A | 80µJ (on), 605µJ (off) | 7.5 nC | 12ns/225ns | |||||||||||||
|
APT6010B2LLG | 27.1800 | |
5738 | 0.00000000 | Microchip Technology | POWER MOS 7® | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | APT6010 | MOSFET (Metal Oxide) | T-MAX™ [B2] | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 600 V | 54A (Tc) | 10V | 100mOhm @ 27A, 10V | 5V @ 2.5mA | 150 nC @ 10 V | ±30V | 6710 pF @ 25 V | - | 690W (Tc) | |||||||||||||
 |
APT6013JFLL | 40.3900 | |
9012 | 0.00000000 | Microchip Technology | POWER MOS 7® | Tube | Active | Chassis Mount | SOT-227-4, miniBLOC | APT6013 | MOSFET (Metal Oxide) | ISOTOP® | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 600 V | 39A (Tc) | 130mOhm @ 19.5A, 10V | 5V @ 2.5mA | 130 nC @ 10 V | 5630 pF @ 25 V | - | |||||||||||||||||
|
APT60M75L2FLLG | 50.6400 | |
3148 | 0.00000000 | Microchip Technology | POWER MOS 7® | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | APT60M75 | MOSFET (Metal Oxide) | 264 MAX™ [L2] | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 600 V | 73A (Tc) | 10V | 75mOhm @ 36.5A, 10V | 5V @ 5mA | 195 nC @ 10 V | ±30V | 8930 pF @ 25 V | - | 893W (Tc) | |||||||||||||
|
APT60M75L2LLG | 50.6400 | |
1545 | 0.00000000 | Microchip Technology | POWER MOS 7® | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | APT60M75 | MOSFET (Metal Oxide) | 264 MAX™ [L2] | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 600 V | 73A (Tc) | 10V | 75mOhm @ 36.5A, 10V | 5V @ 5mA | 195 nC @ 10 V | ±30V | 8930 pF @ 25 V | - | 893W (Tc) | |||||||||||||
|
APT65GP60L2DQ2G | 20.7000 | |
2283 | 0.00000000 | Microchip Technology | POWER MOS 7® | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | APT65GP60 | Standard | 833 W | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | 400V, 65A, 5Ohm, 15V | PT | 600 V | 198 A | 250 A | 2.7V @ 15V, 65A | 605µJ (on), 895µJ (off) | 210 nC | 30ns/90ns | |||||||||||||||
 |
BUK6D43-60E,115 | - | |
5310 | 0.00000000 | Nexperia USA Inc. | * | Bulk | Active | download | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||||
 |
AUIRFZ48Z | 0.9100 | |
5 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 55 V | 61A (Tc) | 10V | 11mOhm @ 37A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±20V | 1720 pF @ 25 V | - | 91W (Tc) | |||||||||||||||||
 |
AUIRF1010EZS | - | |
5742 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | PG-TO263-3 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 60 V | 75A (Tc) | 10V | 8.5mOhm @ 51A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±20V | 2810 pF @ 25 V | - | 140W (Tc) | |||||||||||||||||
|
BUK962R5-60E118 | 1.0000 | |
6166 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | download | EAR99 | 8541.29.0095 | 1 | |||||||||||||||||||||||||||||||||
 |
IRFH7004TRPBF | - | |
3280 | 0.00000000 | International Rectifier | HEXFET®, StrongIRFET™ | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-VQFN Exposed Pad | MOSFET (Metal Oxide) | 8-PQFN (5x6) | - | 0000.00.0000 | 1 | N-Channel | 40 V | 100A (Tc) | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.9V @ 150µA | 194 nC @ 10 V | ±20V | 6419 pF @ 25 V | - | 156W (Tc) | ||||||||||||||||||
|
IRFB4310PBF | 1.0000 | |
8280 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 100 V | 130A (Tc) | 10V | 7mOhm @ 75A, 10V | 4V @ 250µA | 250 nC @ 10 V | ±20V | 7670 pF @ 50 V | - | 300W (Tc) | |||||||||||||||||
 |
CSD18503KCS | 0.8300 | |
740 | 0.00000000 | National Semiconductor | NexFET™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220-3 | download | EAR99 | 8541.29.0095 | 353 | N-Channel | 40 V | 100A (Tc) | 4.5V, 10V | 4.5mOhm @ 75A, 10V | 2.3V @ 250µA | 36 nC @ 10 V | ±20V | 3150 pF @ 20 V | - | 188W (Tc) | |||||||||||||||||
|
AUIRF1404S | 3.3600 | |
25 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 40 V | 75A (Tc) | 10V | 4mOhm @ 95A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 7360 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | |||||||||||||||||
|
IRFB4615PBF | - | |
8373 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 150 V | 35A (Tc) | 10V | 39mOhm @ 21A, 10V | 5V @ 100µA | 26 nC @ 10 V | ±20V | 1750 pF @ 50 V | - | 144W (Tc) | |||||||||||||||||
|
IRFF333 | - | |
8970 | 0.00000000 | International Rectifier | - | Bulk | Active | - | Through Hole | TO-205AF Metal Can | MOSFET (Metal Oxide) | TO-205AF (TO-39) | download | EAR99 | 8542.39.0001 | 64 | N-Channel | 350 V | 3A | - | - | - | - | - | 25W | |||||||||||||||||||
 |
IRFP4368PBF | - | |
6132 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247AC | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 75 V | 195A (Tc) | 10V | 1.85mOhm @ 195A, 10V | 4V @ 250µA | 570 nC @ 10 V | ±20V | 19230 pF @ 50 V | - | 520W (Tc) |
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