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Image Product Number Pricing(USD) Quantity ECAD Quantity Available Weight(Kg) Mfr Series Package Product Status Operating Temperature Mounting Type Package / Case Technology Supplier Device Package DataSheet RoHS Status Moisture Sensitivity Level (MSL) Other Names ECCN HTSUS Standard Package FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max)
IV1Q12050T4 Inventchip IV1Q12050T4 38.5000
RFQ
ECAD 4491 0.00000000 Inventchip - Tube Active -55°C ~ 175°C (TJ) Through Hole TO-247-4 SiCFET (Silicon Carbide) TO-247-4 download ROHS3 Compliant 1 (Unlimited) 4084-IV1Q12050T4 EAR99 8541.29.0095 30 N-Channel 1200 V 58A (Tc) 20V 65mOhm @ 20A, 20V 3.2V @ 6mA 120 nC @ 20 V +20V, -5V 2750 pF @ 800 V - 344W (Tc)
IV1Q12050T3 Inventchip IV1Q12050T3 37.4900
RFQ
ECAD 3 0.00000000 Inventchip - Tube Active -55°C ~ 175°C (TJ) Through Hole TO-247-3 SiCFET (Silicon Carbide) TO-247-3 download ROHS3 Compliant 1 (Unlimited) 4084-IV1Q12050T3 EAR99 8541.29.0095 30 N-Channel 1200 V 58A (Tc) 20V 65mOhm @ 20A, 20V 3.2V @ 6mA 120 nC @ 20 V +20V, -5V 2770 pF @ 800 V - 327W (Tc)
IV1Q12160T4 Inventchip IV1Q12160T4 18.7400
RFQ
ECAD 106 0.00000000 Inventchip - Tube Active -55°C ~ 175°C (TJ) Through Hole TO-247-4 SiCFET (Silicon Carbide) TO-247-4 download ROHS3 Compliant 1 (Unlimited) 4084-IV1Q12160T4 EAR99 30 N-Channel 1200 V 20A (Tc) 20V 195mOhm @ 10A, 20V 2.9V @ 1.9mA 43 nC @ 20 V +20V, -5V 885 pF @ 800 V - 138W (Tc)
  • Daily average RFQ Volume

    2000+

    Daily average RFQ Volume

  • Standard Product Unit

    30,000,000

    Standard Product Unit

  • Worldwide Manufacturers

    2800+

    Worldwide Manufacturers

  • In-stock Warehouse

    15,000 m2

    In-stock Warehouse