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Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Technology | Supplier Device Package | DataSheet | RoHS Status | REACH Status | Other Names | ECCN | HTSUS | Standard Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Vgs (Max) | FET Feature | Power Dissipation (Max) |
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P3M06120T3 | 9.0500 | 8880 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-2 | SiCFET (Silicon Carbide) | TO-220-2L | download | ROHS3 Compliant | REACH Affected | 4237-P3M06120T3 | 1 | N-Channel | 650 V | 29A | 15V | 158mOhm @ 10A, 15V | 2.2V @ 5mA (Typ) | +20V, -8V | - | 153W | |||||
P3M06060G7 | 10.3800 | 7390 | 0.00000000 | PN Junction Semiconductor | P3M | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiCFET (Silicon Carbide) | D2PAK-7 | download | ROHS3 Compliant | REACH Affected | 4237-P3M06060G7TR | EAR99 | 8541.29.0095 | 1 | N-Channel | 650 V | 44A | 15V | 79mOhm @ 20A, 15V | 2.2V @ 20mA (Typ) | +20V, -8V | - | 159W | |||
P3M06060T3 | 10.3800 | 8146 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-2 | SiCFET (Silicon Carbide) | TO-220-2L | download | ROHS3 Compliant | REACH Affected | 4237-P3M06060T3 | 1 | N-Channel | 650 V | 46A | 15V | 79mOhm @ 20A, 15V | 2.2V @ 20mA (Typ) | +20V, -8V | - | 170W | |||||
P3M173K0F3 | 5.0800 | 8624 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220F-2 | SiCFET (Silicon Carbide) | TO-220F-2L | download | ROHS3 Compliant | REACH Affected | 4237-P3M173K0F3 | 1 | N-Channel | 1700 V | 1.97A | 15V | 3.6Ohm @ 0.25A, 15V | 2.2V @ 1.5mA (Typ) | +19V, -8V | - | 19W | |||||
P3M06040K4 | 12.1700 | 2233 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4L | download | ROHS3 Compliant | REACH Affected | 4237-P3M06040K4 | 1 | N-Channel | 650 V | 68A | 15V | 50mOhm @ 40A, 15V | 2.4V @ 7.5mA (Typ) | +20V, -8V | - | 254W | |||||
P3M17040K3 | 35.8600 | 3652 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3L | download | ROHS3 Compliant | REACH Affected | 4237-P3M17040K3 | 1 | N-Channel | 1700 V | 73A | 15V | 60mOhm @ 50A, 15V | 2.2V @ 50mA (Typ) | +19V, -8V | - | 536W | |||||
P3M171K0K3 | 6.1000 | 5311 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3L | download | ROHS3 Compliant | REACH Affected | 4237-P3M171K0K3 | 1 | N-Channel | 1700 V | 6A | 15V | 1.4Ohm @ 2A, 15V | 2.2V @ 2mA (Typ) | +19V, -8V | - | 68W | |||||
P3M12080K3 | 11.9000 | 1973 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3L | download | ROHS3 Compliant | REACH Affected | 4237-P3M12080K3 | 1 | N-Channel | 1200 V | 47A | 15V | 96mOhm @ 20A, 15V | 2.4V @ 5mA (Typ) | +21V, -8V | - | 221W | |||||
P3M06025K4 | 15.9000 | 5048 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4L | download | ROHS3 Compliant | REACH Affected | 4237-P3M06025K4 | 1 | N-Channel | 650 V | 97A | 15V | 34mOhm @ 50A, 15V | 2.2V @ 50mA (Typ) | +20V, -8V | - | 326W |
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