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FETs, MOSFETs(56295)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Supplier Device Package | DataSheet | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PMPB23XNEAX | 0.1000 |  |
11 | 0.00000000 | Nexperia USA Inc. | Automotive, AEC-Q101, TrenchMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | MOSFET (Metal Oxide) | DFN2020MD-6 | download | Vendor Undefined | Vendor Undefined | 2156-PMPB23XNEAX-1727 | 1 | N-Channel | 20 V | 7A (Ta) | 1.8V, 4.5V | 22mOhm @ 7A, 4.5V | 900mV @ 250µA | 17 nC @ 4.5 V | ±12V | 1136 pF @ 10 V | - | 1.7W (Ta), 12.5W (Tc) | ||||
 |
NVB5405NT4G | 1.4100 | |
5 | 0.00000000 | onsemi | - | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D²PAK | download | Vendor Undefined | REACH Unaffected | 2156-NVB5405NT4G-488 | 1 | N-Channel | 40 V | 16.5A (Ta), 116A (Tc) | 5V, 10V | 5.8mOhm @ 40A, 10V | 3.5V @ 250µA | 88 nC @ 10 V | ±20V | 4000 pF @ 32 V | - | 3W (Ta), 150W (Tc) | ||||
 |
MMBFJ305 | 0.1400 | |
107 | 0.00000000 | Fairchild Semiconductor | * | Bulk | Active | download | Vendor Undefined | REACH Unaffected | 2156-MMBFJ305-600039 | EAR99 | 8541.21.0095 | 1 | ||||||||||||||||||
 |
NTF3055L108T3G | - | |
5850 | 0.00000000 | onsemi | - | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | SOT-223 (TO-261) | download | Vendor Undefined | REACH Unaffected | 2156-NTF3055L108T3G-488 | 1 | N-Channel | 60 V | 3A (Ta) | 5V | 120mOhm @ 1.5A, 5V | 2V @ 250µA | 15 nC @ 5 V | ±15V | 440 pF @ 25 V | - | 1.3W (Ta) | ||||
|
AUIRFR8401TRL | - | |
5614 | 0.00000000 | Infineon Technologies | Automotive, AEC-Q101, HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | D-Pak | download | 1 (Unlimited) | REACH Unaffected | 2156-AUIRFR8401TRL-448 | 1 | N-Channel | 40 V | 100A (Tc) | 10V | 4.25mOhm @ 60A, 10V | 3.9V @ 50µA | 63 nC @ 10 V | ±20V | 2200 pF @ 25 V | - | 79W (Tc) | ||||
 |
IPL65R650C6SE8211ATMA1 | - | |
4688 | 0.00000000 | Infineon Technologies | * | Bulk | Active | download | Vendor Undefined | REACH Unaffected | 2156-IPL65R650C6SE8211ATMA1-448 | 1 | ||||||||||||||||||||
|
FDD2572 | - | |
9407 | 0.00000000 | onsemi | PowerTrench® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252AA | download | 1 (Unlimited) | REACH Unaffected | 2156-FDD2572-488 | EAR99 | 8541.29.0095 | 1 | N-Channel | 150 V | 4A (Ta), 29A (Tc) | 6V, 10V | 54mOhm @ 9A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±20V | 1770 pF @ 25 V | - | 135W (Tc) | ||
|
NVD3055L170T4G | - | |
5544 | 0.00000000 | onsemi | - | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | DPAK | download | Vendor Undefined | REACH Unaffected | 2156-NVD3055L170T4G-488 | 1 | N-Channel | 60 V | 9A (Ta) | 5V | 170mOhm @ 4.5A, 5V | 2V @ 250µA | 10 nC @ 5 V | ±15V | 275 pF @ 25 V | - | 1.5W (Ta), 28.5W (Tj) | ||||
 |
AUIRF9540N | 0.9600 | |
3536 | 0.00000000 | Infineon Technologies | Automotive, AEC-Q101 | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | Vendor Undefined | REACH Unaffected | 2156-AUIRF9540N-448 | 1 | P-Channel | 100 V | 23A (Tc) | 10V | 117mOhm @ 11A, 10V | 4V @ 250µA | 97 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 140W (Tc) | ||||
|
FD1400R12IP4DBOSA1 | 633.1300 | |
20 | 0.00000000 | Infineon Technologies | * | Bulk | Active | FD1400R | - | download | Vendor Undefined | REACH Unaffected | 2156-FD1400R12IP4DBOSA1-448 | 1 | - | |||||||||||||||||
 |
PMV42ENE215 | - | |
1454 | 0.00000000 | NXP Semiconductors | * | Bulk | Active | download | Vendor Undefined | Vendor Undefined | 2156-PMV42ENE215-954 | 1 | ||||||||||||||||||||
|
FDMA410NZT | - | |
6910 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | MOSFET (Metal Oxide) | 6-UDFN (2.05x2.05) | download | Vendor Undefined | REACH Unaffected | 2156-FDMA410NZT-600039 | 1 | N-Channel | 20 V | 9.5A (Ta) | 1.5V, 4.5V | 23mOhm @ 9.5A, 4.5V | 1V @ 250µA | 14 nC @ 4.5 V | ±8V | 1310 pF @ 10 V | - | 2.4W (Ta) | ||||
 |
PSMN9R5-100PS,127 | 1.0700 | |
42 | 0.00000000 | NXP Semiconductors | * | Bulk | Active | download | Not Applicable | REACH Unaffected | 2156-PSMN9R5-100PS,127-954 | EAR99 | 8541.29.0075 | 280 | ||||||||||||||||||
 |
PSMN9R1-30YL,115 | - | |
6114 | 0.00000000 | Nexperia USA Inc. | * | Bulk | Active | download | 1 (Unlimited) | REACH Unaffected | 2156-PSMN9R1-30YL,115-1727 | EAR99 | 8541.29.0075 | 1 | ||||||||||||||||||
 |
CPH6355-TL-H | 0.1400 | |
224 | 0.00000000 | onsemi | - | Bulk | Active | 150°C (TJ) | Surface Mount | SOT-23-6 | MOSFET (Metal Oxide) | 6-CPH | download | Vendor Undefined | REACH Unaffected | 2156-CPH6355-TL-H-488 | 1 | P-Channel | 30 V | 3A (Ta) | 4V, 10V | 169mOhm @ 1.5A, 10V | - | 3.9 nC @ 10 V | ±20V | 172 pF @ 10 V | - | 1.6W (Ta) | ||||
 |
SPI11N60C3XKSA1 | 1.4700 | |
2 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | PG-TO262-3-1 | download | Vendor Undefined | REACH Unaffected | 2156-SPI11N60C3XKSA1-448 | 1 | N-Channel | 650 V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 60 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | ||||
|
PSMN6R0-25YLD115 | 0.2200 | |
9 | 0.00000000 | NXP Semiconductors | * | Bulk | Active | download | Vendor Undefined | REACH Unaffected | 2156-PSMN6R0-25YLD115-954 | 1,340 | ||||||||||||||||||||
|
PSMN7R0-100BS,118 | 1.0000 | |
9608 | 0.00000000 | NXP Semiconductors | - | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | 1 (Unlimited) | REACH Unaffected | 2156-PSMN7R0-100BS,118-954 | EAR99 | 8541.29.0095 | 1 | N-Channel | 100 V | 100A (Tc) | 10V | 6.8mOhm @ 15A, 10V | 4V @ 1mA | 125 nC @ 10 V | ±20V | 6686 pF @ 50 V | - | 269W (Tc) | ||
|
AUIRFS4115-7P | 3.1400 | |
35 | 0.00000000 | Infineon Technologies | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | MOSFET (Metal Oxide) | D2PAK (7-Lead) | - | Vendor Undefined | REACH Unaffected | 2156-AUIRFS4115-7P-448 | 1 | N-Channel | 150 V | 105A (Tc) | 10V | 11.8mOhm @ 63A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±20V | 5320 pF @ 50 V | - | 380W (Tc) | ||||
|
PSMN8R0-40PS,127 | - | |
2848 | 0.00000000 | NXP Semiconductors | - | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | Not Applicable | REACH Unaffected | 2156-PSMN8R0-40PS,127-954 | 1 | N-Channel | 40 V | 77A (Tc) | 10V | 7.6mOhm @ 25A, 10V | 4V @ 1mA | 21 nC @ 10 V | ±20V | 1262 pF @ 12 V | - | 86W (Tc) | ||||
|
NTP6413ANG | 1.1300 | |
1 | 0.00000000 | onsemi | - | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | Vendor Undefined | REACH Unaffected | 2156-NTP6413ANG-488 | 1 | N-Channel | 100 V | 42A (Tc) | 10V | 28mOhm @ 42A, 10V | 4V @ 250µA | 51 nC @ 10 V | ±20V | 1800 pF @ 25 V | - | 136W (Tc) | ||||
 |
FDSS2407_SB82086 | 0.7300 | |
1 | 0.00000000 | Fairchild Semiconductor | * | Bulk | Active | download | Vendor Undefined | Vendor Undefined | 2156-FDSS2407_SB82086-600039 | 1 | ||||||||||||||||||||
 |
NTHL080N120SC1 | - | |
4440 | 0.00000000 | onsemi | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3 | download | Vendor Undefined | REACH Unaffected | 2156-NTHL080N120SC1-488 | 1 | N-Channel | 1200 V | 44A (Tc) | 20V | 110mOhm @ 20A, 20V | 4.3V @ 5mA | 56 nC @ 20 V | +25V, -15V | 1670 pF @ 800 V | - | 348W (Tc) | ||||
|
IRFB38N20DPBF | - | |
8902 | 0.00000000 | Infineon Technologies | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | Not Applicable | REACH Unaffected | 2156-IRFB38N20DPBF-448 | EAR99 | 8541.29.0095 | 1 | N-Channel | 200 V | 43A (Tc) | 10V | 54mOhm @ 26A, 10V | 5V @ 250µA | 91 nC @ 10 V | ±20V | 2900 pF @ 25 V | - | 3.8W (Ta), 300W (Tc) | ||
|
AUIRFP2907 | 4.7100 | |
450 | 0.00000000 | Infineon Technologies | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247AC | download | Vendor Undefined | REACH Affected | 2156-AUIRFP2907-448 | 1 | N-Channel | 75 V | 90A (Tc) | 10V | 4.5mOhm @ 125A, 10V | 4V @ 250µA | 620 nC @ 10 V | ±20V | 13000 pF @ 25 V | - | 470W (Tc) | ||||
 |
IRF6617TRPBF | 0.8000 | |
7 | 0.00000000 | Infineon Technologies | HEXFET® | Bulk | Active | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric ST | MOSFET (Metal Oxide) | DIRECTFET™ ST | download | REACH Unaffected | 2156-IRF6617TRPBF-448 | EAR99 | 8541.29.0095 | 1 | N-Channel | 30 V | 14A (Ta), 55A (Tc) | 4.5V, 10V | 8.1mOhm @ 15A, 10V | 2.35V @ 250µA | 17 nC @ 4.5 V | ±20V | 1300 pF @ 15 V | - | 2.1W (Ta), 42W (Tc) | |||
|
IPP70N10S3L12AKSA1 | - | |
6830 | 0.00000000 | Infineon Technologies | OptiMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | PG-TO220-3-1 | download | Vendor Undefined | REACH Unaffected | 2156-IPP70N10S3L12AKSA1-448 | 0000.00.0000 | 1 | N-Channel | 100 V | 70A (Tc) | 4.5V, 10V | 12.1mOhm @ 70A, 10V | 2.4V @ 83µA | 80 nC @ 10 V | ±20V | 5550 pF @ 25 V | - | 125W (Tc) | |||
|
MMBF5458 | 1.0000 | |
2183 | 0.00000000 | onsemi | * | Bulk | Active | download | Vendor Undefined | REACH Unaffected | 2156-MMBF5458-488 | 1 | ||||||||||||||||||||
|
IPL60R285P7AUMA1 | - | |
1148 | 0.00000000 | Infineon Technologies | CoolMOS™ P7 | Bulk | Active | -40°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | MOSFET (Metal Oxide) | PG-VSON-4 | download | Vendor Undefined | REACH Unaffected | 2156-IPL60R285P7AUMA1-448 | 1 | N-Channel | 600 V | 13A (Tc) | 10V | 285mOhm @ 3.8A, 10V | 4V @ 190µA | 18 nC @ 10 V | ±20V | 761 pF @ 400 V | - | 59W (Tc) | ||||
 |
MCH6331-TL-H | 0.1700 | |
1 | 0.00000000 | onsemi | - | Bulk | Active | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | MOSFET (Metal Oxide) | 6-MCPH | download | Vendor Undefined | REACH Unaffected | 2156-MCH6331-TL-H-488 | 0000.00.0000 | 1 | P-Channel | 30 V | 3.5A (Ta) | 4V, 10V | 98mOhm @ 1.5A, 10V | - | 5 nC @ 10 V | ±20V | 250 pF @ 10 V | - | 1.5W (Ta) |
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