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FETs, MOSFETs(56295)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TK11A60D(STA4,Q,M) | - |  |
6517 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK11A60 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 11A (Ta) | 10V | 650mOhm @ 5.5A, 10V | 4V @ 1mA | 28 nC @ 10 V | ±30V | 1550 pF @ 25 V | - | 45W (Tc) | |||||
|
TK12A50D(STA4,Q,M) | 2.4700 | |
40 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK12A50 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 12A (Ta) | 10V | 520mOhm @ 6A, 10V | 4V @ 1mA | 25 nC @ 10 V | ±30V | 1350 pF @ 25 V | - | 45W (Tc) | |||||
|
TK12A55D(STA4,Q,M) | 2.8400 | |
5060 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK12A55 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 550 V | 12A (Ta) | 10V | 570mOhm @ 6A, 10V | 4V @ 1mA | 28 nC @ 10 V | ±30V | 1550 pF @ 25 V | - | 45W (Tc) | |||||
|
TK14A45DA(STA4,QM) | 2.7100 | |
3625 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | - | Through Hole | TO-220-3 Full Pack | TK14A45 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 450 V | 13.5A | 410mOhm @ 6.8A, 10V | - | - | - | |||||||||
|
TK16A55D(STA4,Q,M) | - | |
3760 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK16A55 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 550 V | 16A (Ta) | 330mOhm @ 8A, 10V | 4V @ 1mA | 45 nC @ 10 V | 2600 pF @ 25 V | - | - | |||||||
|
TK2A65D(STA4,Q,M) | 1.4400 | |
6893 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK2A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 2A (Ta) | 10V | 3.26Ohm @ 1A, 10V | 4.4V @ 1mA | 9 nC @ 10 V | ±30V | 380 pF @ 25 V | - | 30W (Tc) | |||||
 |
TK2Q60D(Q) | 0.9400 | |
6036 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Bulk | Active | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | TK2Q60 | MOSFET (Metal Oxide) | PW-MOLD2 | download | ROHS3 Compliant | 1 (Unlimited) | TK2Q60DQ | EAR99 | 8541.29.0095 | 200 | N-Channel | 600 V | 2A (Ta) | 10V | 4.3Ohm @ 1A, 10V | 4.4V @ 1mA | 7 nC @ 10 V | ±30V | 280 pF @ 25 V | - | 60W (Tc) | ||||
 |
TK30S06K3L(T6L1,NQ | - | |
1314 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Obsolete | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK30S06 | MOSFET (Metal Oxide) | DPAK+ | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 60 V | 30A (Ta) | 6V, 10V | 18Ohm @ 15A, 10V | 3V @ 1mA | 28 nC @ 10 V | ±20V | 1350 pF @ 10 V | - | 58W (Tc) | |||||
|
TK3A60DA(STA4,Q,M) | 1.2100 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK3A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 2.5A (Ta) | 10V | 2.8Ohm @ 1.3A, 10V | 4.4V @ 1mA | 9 nC @ 10 V | ±30V | 380 pF @ 25 V | - | 30W (Tc) | |||||
 |
TK3P50D,RQ(S | 1.1700 | |
6966 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK3P50 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 500 V | 3A (Ta) | 10V | 3Ohm @ 1.5A, 10V | 4.4V @ 1mA | 7 nC @ 10 V | ±30V | 280 pF @ 25 V | - | 60W (Tc) | |||||
|
TK5A45DA(STA4,Q,M) | 1.0600 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK5A45 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 450 V | 4.5A (Ta) | 10V | 1.75Ohm @ 2.3A, 10V | 4.4V @ 1mA | 9 nC @ 10 V | ±30V | 380 pF @ 25 V | - | 30W (Tc) | |||||
|
TK5A65DA(STA4,Q,M) | 1.5900 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK5A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 4.5A (Ta) | 10V | 1.67Ohm @ 2.3A, 10V | 4.4V @ 1mA | 16 nC @ 10 V | ±30V | 700 pF @ 25 V | - | 35W (Tc) | |||||
 |
TK60E08K3,S1X(S | - | |
6639 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | - | Through Hole | TO-220-3 | TK60E08 | MOSFET (Metal Oxide) | TO-220-3 | - | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 75 V | 60A | 9mOhm @ 30A, 10V | - | 75 nC @ 10 V | - | 128W | ||||||||
|
TK7P50D(T6RSS-Q) | 1.4300 | |
9717 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK7P50 | MOSFET (Metal Oxide) | D-Pak | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 500 V | 7A (Ta) | 10V | 1.22Ohm @ 3.5A, 10V | 4.4V @ 1mA | 12 nC @ 10 V | ±30V | 600 pF @ 25 V | - | 100W (Tc) | |||||
|
TK8A50DA(STA4,Q,M) | 1.6000 | |
2557 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK8A50 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 7.5A (Ta) | 10V | 1.04Ohm @ 3.8A, 10V | 4.4V @ 1mA | 16 nC @ 10 V | ±30V | 700 pF @ 25 V | - | 35W (Tc) | |||||
|
TK8A60DA(STA4,Q,M) | - | |
1362 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK8A60 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 7.5A (Ta) | 10V | 1Ohm @ 4A, 10V | 4V @ 1mA | 20 nC @ 10 V | ±30V | 1050 pF @ 25 V | - | 45W (Tc) | |||||
|
TK8S06K3L(T6L1,NQ) | 1.2600 | |
4739 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK8S06 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 60 V | 8A (Ta) | 6V, 10V | 54mOhm @ 4A, 10V | 3V @ 1mA | 10 nC @ 10 V | ±20V | 400 pF @ 10 V | - | 25W (Tc) | |||||
 |
TPC6009-H(TE85L,FM | - | |
2245 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TPC6009 | MOSFET (Metal Oxide) | VS-6 (2.9x2.8) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 40 V | 5.3A (Ta) | 4.5V, 10V | 81mOhm @ 2.7A, 10V | 2.3V @ 100µA | 4.7 nC @ 10 V | ±20V | 290 pF @ 10 V | - | 700mW (Ta) | |||||
 |
TPC8132,LQ(S | 0.9600 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | TPC8132 | MOSFET (Metal Oxide) | 8-SOP | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 40 V | 7A (Ta) | 4.5V, 10V | 25mOhm @ 3.5A, 10V | 2V @ 200µA | 34 nC @ 10 V | +20V, -25V | 1580 pF @ 10 V | - | 1W (Ta) | |||||
|
TPC8407,LQ(S | - | |
5590 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | TPC8407 | MOSFET (Metal Oxide) | 450mW | 8-SOP | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 2,500 | N and P-Channel | 30V | 9A, 7.4A | 17mOhm @ 4.5A, 10V | 2.3V @ 100µA | 17nC @ 10V | 1190pF @ 10V | Logic Level Gate | |||||||
 |
TPCA8065-H,LQ(S | - | |
3579 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCA8065 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 16A (Ta) | 4.5V, 10V | 11.4mOhm @ 8A, 10V | 2.3V @ 200µA | 20 nC @ 10 V | ±20V | 1600 pF @ 10 V | - | 1.6W (Ta), 25W (Tc) | |||||
 |
TPCC8009,LQ(O | - | |
6494 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCC8009 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 24A (Ta) | 7mOhm @ 12A, 10V | 3V @ 200µA | 26 nC @ 10 V | 1270 pF @ 10 V | - | - | ||||||||
 |
TPCL4201(TE85L,F) | - | |
1167 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 4-XFLGA | TPCL4201 | MOSFET (Metal Oxide) | 500mW | 4-Chip LGA (1.59x1.59) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 2 N-Channel (Half Bridge) | - | - | - | 1.2V @ 200µA | - | 720pF @ 10V | - | ||||||||
|
TPCL4202(TE85L,F) | - | |
3500 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 4-XFLGA | TPCL4202 | MOSFET (Metal Oxide) | 500mW | 4-Chip LGA (1.59x1.59) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 2 N-Channel (Half Bridge) | - | - | - | 1.2V @ 200µA | - | 780pF @ 10V | - | ||||||||
 |
IXFH70N20Q3 | 13.5700 | |
30 | 0.00000000 | IXYS | HiPerFET™, Q3 Class | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IXFH70 | MOSFET (Metal Oxide) | TO-247AD (IXFH) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 200 V | 70A (Tc) | 10V | 40mOhm @ 35A, 10V | 6.5V @ 4mA | 67 nC @ 10 V | ±20V | 3150 pF @ 25 V | - | 690W (Tc) | ||||
|
IXFH50N30Q3 | 13.5700 | |
1 | 0.00000000 | IXYS | HiPerFET™, Q3 Class | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IXFH50 | MOSFET (Metal Oxide) | TO-247AD (IXFH) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 300 V | 50A (Tc) | 10V | 80mOhm @ 25A, 10V | 6.5V @ 4mA | 65 nC @ 10 V | ±20V | 3160 pF @ 25 V | - | 690W (Tc) | ||||
 |
IXFX64N60Q3 | 24.7800 | |
17 | 0.00000000 | IXYS | HiPerFET™ | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | IXFX64 | MOSFET (Metal Oxide) | PLUS247™-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | -IXFX64N60Q3 | EAR99 | 8541.29.0095 | 30 | N-Channel | 600 V | 64A (Tc) | 10V | 95mOhm @ 32A, 10V | 6.5V @ 4mA | 190 nC @ 10 V | ±30V | 9930 pF @ 25 V | - | 1250W (Tc) | |||
 |
IXFN82N60Q3 | 60.1900 | |
5538 | 0.00000000 | IXYS | HiPerFET™, Q3 Class | Tube | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | IXFN82 | MOSFET (Metal Oxide) | SOT-227B | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 10 | N-Channel | 600 V | 66A (Tc) | 10V | 75mOhm @ 41A, 10V | 6.5V @ 8mA | 275 nC @ 10 V | ±30V | 13500 pF @ 25 V | - | 960W (Tc) | ||||
|
IXFX44N80Q3 | 32.0425 | |
4814 | 0.00000000 | IXYS | HiPerFET™, Q3 Class | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | IXFX44 | MOSFET (Metal Oxide) | PLUS247™-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 800 V | 44A (Tc) | 10V | 190mOhm @ 22A, 10V | 6.5V @ 8mA | 185 nC @ 10 V | ±30V | 9840 pF @ 25 V | - | 1250W (Tc) | ||||
 |
IXFR24N100Q3 | 32.9000 | |
150 | 0.00000000 | IXYS | HiPerFET™, Q3 Class | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IXFR24 | MOSFET (Metal Oxide) | ISOPLUS247™ | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 1000 V | 18A (Tc) | 10V | 490mOhm @ 12A, 10V | 6.5V @ 4mA | 140 nC @ 10 V | ±30V | 7200 pF @ 25 V | - | 500W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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