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FETs, MOSFETs(55612)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TPC8223-H,LQ(S | - |  |
5007 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | TPC8223 | MOSFET (Metal Oxide) | 450mW | 8-SOP | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 2,500 | 2 N-Channel (Dual) | 30V | 9A | 17mOhm @ 4.5A, 10V | 2.3V @ 100µA | 17nC @ 10V | 1190pF @ 10V | Logic Level Gate | |||||||
 |
TPC8A05-H(TE12L,QM | - | |
6243 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSV-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8A05 | MOSFET (Metal Oxide) | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 10A (Ta) | 4.5V, 10V | 13.3mOhm @ 5A, 10V | 2.3V @ 1mA | 15 nC @ 10 V | ±20V | 1700 pF @ 10 V | Schottky Diode (Body) | 1W (Ta) | ||||||
|
TPC8A06-H(TE12LQM) | - | |
8606 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | - | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8A06 | MOSFET (Metal Oxide) | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | TPC8A06HTE12LQM | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 12A (Ta) | 4.5V, 10V | 10.1mOhm @ 6A, 10V | 2.3V @ 1mA | 19 nC @ 10 V | ±20V | 1800 pF @ 10 V | Schottky Diode (Body) | - | |||||
 |
TPCA8062-H,LQ(CM | - | |
4497 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCA8062 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 28A (Ta) | 4.5V, 10V | 5.6mOhm @ 14A, 10V | 2.3V @ 300µA | 34 nC @ 10 V | ±20V | 2900 pF @ 10 V | - | 1.6W (Ta), 42W (Tc) | |||||
 |
TPCC8065-H,LQ(S | - | |
2198 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCC8065 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 13A (Ta) | 4.5V, 10V | 11.4mOhm @ 6.5A, 10V | 2.3V @ 200µA | 20 nC @ 10 V | ±20V | 1350 pF @ 10 V | - | 700mW (Ta), 18W (Tc) | |||||
 |
SIHP22N60E-E3 | 2.1315 | |
5738 | 0.00000000 | Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | SIHP22 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | SIHP22N60EE3 | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 600 V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±30V | 1920 pF @ 100 V | - | 227W (Tc) | ||||
 |
AOT290L | 5.4200 | |
8761 | 0.00000000 | Alpha & Omega Semiconductor Inc. | - | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | AOT290 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 785-1271-5 | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 18A (Ta), 140A (Tc) | 10V | 3.5mOhm @ 20A, 10V | 4.1V @ 250µA | 126 nC @ 10 V | ±20V | 9550 pF @ 50 V | - | 2.1W (Ta), 500W (Tc) | |||
|
AOT2918L | - | |
9257 | 0.00000000 | Alpha & Omega Semiconductor Inc. | - | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | AOT2918 | MOSFET (Metal Oxide) | TO-220 | download | 1 (Unlimited) | REACH Unaffected | 785-1274-5 | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 100 V | 13A (Ta), 90A (Tc) | 10V | 7mOhm @ 20A, 10V | 3.9V @ 250µA | 53 nC @ 10 V | ±20V | 3430 pF @ 50 V | - | 2.1W (Ta), 267W (Tc) | ||||
|
AOT240L | 1.9500 | |
9699 | 0.00000000 | Alpha & Omega Semiconductor Inc. | - | Tube | Not For New Designs | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | AOT240 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 785-1270-5 | EAR99 | 8541.29.0095 | 50 | N-Channel | 40 V | 20A (Ta), 105A (Tc) | 4.5V, 10V | 2.9mOhm @ 20A, 10V | 2.2V @ 250µA | 72 nC @ 10 V | ±20V | 4300 pF @ 20 V | - | 1.9W (Ta), 176W (Tc) | |||
|
AOT260L | 3.1700 | |
2 | 0.00000000 | Alpha & Omega Semiconductor Inc. | - | Tube | Not For New Designs | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | AOT260 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 785-1273-5 | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 20A (Ta), 140A (Tc) | 6V, 10V | 2.5mOhm @ 20A, 10V | 3.2V @ 250µA | 180 nC @ 10 V | ±20V | 14200 pF @ 30 V | - | 1.9W (Ta), 330W (Tc) | |||
 |
TJ15P04M3,RQ(S | 0.8700 | |
878 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ15P04 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 40 V | 15A (Ta) | 4.5V, 10V | 36mOhm @ 7.5A, 10V | 2V @ 100µA | 26 nC @ 10 V | ±20V | 1100 pF @ 10 V | - | 29W (Tc) | |||||
 |
TJ20S04M3L(T6L1,NQ | 1.3300 | |
9822 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ20S04 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 40 V | 20A (Ta) | 6V, 10V | 22.2mOhm @ 10A, 10V | 3V @ 1mA | 37 nC @ 10 V | +10V, -20V | 1850 pF @ 10 V | - | 41W (Tc) | |||||
|
TJ30S06M3L(T6L1,NQ | 0.7102 | |
2570 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ30S06 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 60 V | 30A (Ta) | 6V, 10V | 21.8mOhm @ 15A, 10V | 3V @ 1mA | 80 nC @ 10 V | +10V, -20V | 3950 pF @ 10 V | - | 68W (Tc) | |||||
 |
TK11A45D(STA4,Q,M) | 1.8600 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK11A45 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 450 V | 11A (Ta) | 10V | 620mOhm @ 5.5A, 10V | 4V @ 1mA | 20 nC @ 10 V | ±30V | 1050 pF @ 25 V | - | 40W (Tc) | |||||
|
TK12A45D(STA4,Q,M) | 2.2300 | |
1473 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK12A45 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 450 V | 12A (Ta) | 10V | 520mOhm @ 6A, 10V | 4V @ 1mA | 24 nC @ 10 V | ±30V | 1200 pF @ 25 V | - | 45W (Tc) | |||||
|
TK13A45D(STA4,Q,M) | 2.4700 | |
9513 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK13A45 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 450 V | 13A (Ta) | 10V | 460mOhm @ 6.5A, 10V | 4V @ 1mA | 25 nC @ 10 V | ±30V | 1350 pF @ 25 V | - | 45W (Tc) | |||||
|
TK13A55DA(STA4,QM) | 2.8600 | |
3819 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK13A55 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 550 V | 12.5A (Ta) | 10V | 480mOhm @ 6.3A, 10V | 4V @ 1mA | 38 nC @ 10 V | ±30V | 1800 pF @ 25 V | - | 45W (Tc) | |||||
 |
TK13E25D,S1X(S | 2.2900 | |
4902 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK13E25 | MOSFET (Metal Oxide) | TO-220-3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 250 V | 13A (Ta) | 10V | 250mOhm @ 6.5A, 10V | 3.5V @ 1mA | 25 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 102W (Tc) | |||||
|
TK14A55D(STA4,Q,M) | 3.1600 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK14A55 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 550 V | 14A (Ta) | 10V | 370mOhm @ 7A, 10V | 4V @ 1mA | 40 nC @ 10 V | ±30V | 2300 pF @ 25 V | - | 50W (Tc) | |||||
|
TK15A50D(STA4,Q,M) | 3.2300 | |
29 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK15A50 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 15A (Ta) | 10V | 300mOhm @ 7.5A, 10V | 4V @ 1mA | 40 nC @ 10 V | ±30V | 2300 pF @ 25 V | - | 50W (Tc) | |||||
|
TK16A45D(STA4,Q,M) | - | |
9568 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | - | Through Hole | TO-220-3 Full Pack | TK16A45 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 450 V | 16A | 270mOhm @ 8A, 10V | - | - | - | |||||||||
|
TK20A25D,S5Q(M | - | |
8354 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK20A25 | MOSFET (Metal Oxide) | TO-220SIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 250 V | 20A (Ta) | 10V | 100mOhm @ 10A, 10V | 3.5V @ 1mA | 55 nC @ 10 V | ±20V | 2550 pF @ 100 V | - | 45W (Tc) | ||||||
|
TK20P04M1,RQ(S | - | |
3613 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK20P04 | MOSFET (Metal Oxide) | DPAK | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 40 V | 20A (Ta) | 4.5V, 10V | 29mOhm @ 10A, 10V | 2.3V @ 100µA | 15 nC @ 10 V | ±20V | 985 pF @ 10 V | - | 27W (Tc) | |||||
|
TK20S04K3L(T6L1,NQ | - | |
2714 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Obsolete | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK20S04 | MOSFET (Metal Oxide) | DPAK+ | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 40 V | 20A (Ta) | 6V, 10V | 14mOhm @ 10A, 10V | 3V @ 1mA | 18 nC @ 10 V | ±20V | 820 pF @ 10 V | - | 38W (Tc) | |||||
|
TK25E06K3,S1X(S | - | |
4655 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 | TK25E06 | MOSFET (Metal Oxide) | TO-220-3 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 25A (Ta) | 18mOhm @ 12.5A, 10V | - | 29 nC @ 10 V | - | 60W (Tc) | ||||||||
|
TK3A65D(STA4,Q,M) | 1.6100 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK3A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 3A (Ta) | 10V | 2.25Ohm @ 1.5A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 540 pF @ 25 V | - | 35W (Tc) | |||||
|
TK45P03M1,RQ(S | - | |
5821 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK45P03 | MOSFET (Metal Oxide) | DPAK | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 30 V | 45A (Ta) | 4.5V, 10V | 9.7mOhm @ 22.5A, 10V | 2.3V @ 200µA | 25 nC @ 10 V | ±20V | 1500 pF @ 10 V | - | - | |||||
|
TK4A55D(STA4,Q,M) | - | |
6988 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK4A55 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 550 V | 4A (Ta) | 10V | 1.88Ohm @ 2A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 490 pF @ 25 V | - | 35W (Tc) | |||||
|
TK4P55D(T6RSS-Q) | - | |
5025 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK4P55 | MOSFET (Metal Oxide) | D-Pak | download | RoHS Compliant | 1 (Unlimited) | TK4P55DT6RSSQ | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 550 V | 4A (Ta) | 10V | 1.88Ohm @ 2A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 490 pF @ 25 V | - | 80W (Tc) | ||||
|
TK4P60DB(T6RSS-Q) | - | |
1320 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK4P60 | MOSFET (Metal Oxide) | D-Pak | download | RoHS Compliant | 1 (Unlimited) | TK4P60DBT6RSSQ | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 600 V | 3.7A (Ta) | 10V | 2Ohm @ 1.9A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 540 pF @ 25 V | - | 80W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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