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FETs, MOSFETs(56295)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Frequency | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Voltage - Test |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FQB17P10TM | - |  |
3680 | 0.00000000 | onsemi | QFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | FQB1 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | P-Channel | 100 V | 16.5A (Tc) | 10V | 190mOhm @ 8.25A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 3.75W (Ta), 100W (Tc) | |||||||||||||
 |
NVMJS0D8N04CLTWG | 2.1332 | |
5512 | 0.00000000 | onsemi | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1205, 8-LFPAK56 | NVMJS0 | MOSFET (Metal Oxide) | 8-LFPAK | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 488-NVMJS0D8N04CLTWGTR | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 40 V | 56A (Ta), 368A (Tc) | 4.5V, 10V | 0.72mOhm @ 50A, 10V | 2V @ 250µA | 162 nC @ 10 V | ±20V | 9600 pF @ 25 V | - | 4.2W (Ta), 180W (Tc) | |||||||||||
 |
NVTFS5824NLTAG | - | |
2305 | 0.00000000 | onsemi | Automotive, AEC-Q101 | Tape & Reel (TR) | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerWDFN | NVTFS5 | MOSFET (Metal Oxide) | 8-WDFN (3.3x3.3) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 2832-NVTFS5824NLTAG-488 | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 60 V | 37A (Tc) | 4.5V, 10V | 20.5mOhm @ 10A, 10V | 2.5V @ 250µA | 16 nC @ 10 V | ±20V | 850 pF @ 25 V | - | 3.2W (Ta), 57W (Tc) | |||||||||||
 |
FDA16N50 | - | |
7564 | 0.00000000 | onsemi | UniFET™ | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | FDA16 | MOSFET (Metal Oxide) | TO-3PN | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 500 V | 16.5A (Tc) | 10V | 380mOhm @ 8.3A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 1945 pF @ 25 V | - | 205W (Tc) | |||||||||||||
 |
TK560P60Y,RQ | 1.4700 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK560P60 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 600 V | 7A (Tc) | 10V | 560mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5 nC @ 10 V | ±30V | 380 pF @ 300 V | - | 60W (Tc) | |||||||||||||
 |
IPN80R3K3P7ATMA1 | 0.9600 | |
1990 | 0.00000000 | Infineon Technologies | CoolMOS™ P7 | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | IPN80R3 | MOSFET (Metal Oxide) | PG-SOT223 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 800 V | 1.9A (Tc) | 10V | 3.3Ohm @ 590mA, 10V | 3.5V @ 30µA | 5.8 nC @ 10 V | ±20V | 120 pF @ 500 V | - | 6.1W (Tc) | ||||||||||||
 |
BLL6H1214P2S-250Z | 525.0000 | |
8907 | 0.00000000 | Ampleon USA Inc. | - | Tray | Not For New Designs | 50 V | Module | BLL6 | 1.2GHz ~ 1.4GHz | LDMOS | Module | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 934068602117 | EAR99 | 8541.29.0095 | 2 | Dual | - | 200 mA | 53dBm | 27dB | - | 45 V | |||||||||||||||
 |
IRFD113 | 0.6300 | |
53 | 0.00000000 | Harris Corporation | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | MOSFET (Metal Oxide) | 4-HVMDIP | download | RoHS non-compliant | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 60 V | 800mA (Tc) | 10V | 800mOhm @ 800mA, 10V | 4V @ 250µA | 7 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 1W (Tc) | |||||||||||||||
 |
SIHD1K4N60E-GE3 | 1.1600 | |
5840 | 0.00000000 | Vishay Siliconix | E | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SIHD1 | MOSFET (Metal Oxide) | D-Pak | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 600 V | 4.2A (Tc) | 10V | 1.45Ohm @ 500mA, 10V | 5V @ 250µA | 7.5 nC @ 10 V | ±30V | 172 pF @ 100 V | - | 63W (Tc) | |||||||||||||
 |
SISS26LDN-T1-GE3 | 1.3000 | |
4309 | 0.00000000 | Vishay Siliconix | TrenchFET® Gen IV | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | SISS26 | MOSFET (Metal Oxide) | PowerPAK® 1212-8S | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 60 V | 23.7A (Ta), 81.2A (Tc) | 4.5V, 10V | 4.3mOhm @ 15A, 10V | 2.5V @ 250µA | 48 nC @ 10 V | ±20V | 1980 pF @ 30 V | - | 4.8W (Ta), 57W (Tc) | |||||||||||||
 |
NX7002AK215 | - | |
3044 | 0.00000000 | NXP Semiconductors | - | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | SOT-23-3 (TO-236) | - | 2156-NX7002AK215 | 1 | N-Channel | 60 V | 190mA (Ta), 300mA (Tc) | 5V, 10V | 4.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.43 nC @ 4.5 V | ±20V | 20 pF @ 10 V | - | 265mW (Ta), 1.33W (Tc) | |||||||||||||||||
|
TK380P60Y,RQ | 1.6900 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK380P60 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 600 V | 9.7A (Tc) | 10V | 380mOhm @ 4.9A, 10V | 4V @ 360µA | 20 nC @ 10 V | ±30V | 590 pF @ 300 V | - | 30W (Tc) | |||||||||||||
 |
IXFX73N30Q | - | |
3410 | 0.00000000 | IXYS | HiPerFET™, Q Class | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | IXFX73 | MOSFET (Metal Oxide) | PLUS247™-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 300 V | 73A (Tc) | 10V | 45mOhm @ 500mA, 10V | 4V @ 4mA | 195 nC @ 10 V | ±30V | 5400 pF @ 25 V | - | 500W (Tc) | ||||||||||||
 |
TSM60NB900CH C5G | 2.9000 | |
55 | 0.00000000 | Taiwan Semiconductor Corporation | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TSM60 | MOSFET (Metal Oxide) | TO-251 (IPAK) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 75 | N-Channel | 600 V | 4A (Tc) | 10V | 900mOhm @ 1.2A, 10V | 4V @ 250µA | 9.6 nC @ 10 V | ±30V | 315 pF @ 100 V | - | 36.8W (Tc) | ||||||||||||
 |
FCU3400N80Z | - | |
8340 | 0.00000000 | onsemi | SuperFET® II | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | FCU3400 | MOSFET (Metal Oxide) | I-PAK | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | EAR99 | 8541.29.0095 | 1,800 | N-Channel | 800 V | 2A (Tc) | 10V | 3.4Ohm @ 1A, 10V | 4.5V @ 200µA | 9.6 nC @ 10 V | ±20V | 400 pF @ 100 V | - | 32W (Tc) | ||||||||||||
 |
DMT4011LSS-13 | 0.1752 | |
2064 | 0.00000000 | Diodes Incorporated | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | DMT4011 | MOSFET (Metal Oxide) | 8-SOP | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | DMT4011LSS-13DI | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 40 V | 10.8A (Ta) | 4.5V, 10V | 11.5mOhm @ 20A, 10V | 2.4V @ 250µA | 14.3 nC @ 10 V | ±20V | 829 pF @ 20 V | - | 1.31W (Ta) | |||||||||||
 |
IPB60R190C6ATMA1 | 3.7100 | |
1 | 0.00000000 | Infineon Technologies | CoolMOS™ C6 | Tape & Reel (TR) | Not For New Designs | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IPB60R190 | MOSFET (Metal Oxide) | PG-TO263-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 600 V | 20.2A (Tc) | 10V | 190mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63 nC @ 10 V | ±20V | 1400 pF @ 100 V | - | 151W (Tc) | ||||||||||||
 |
DMN3024LSS-13 | 0.6100 | |
2 | 0.00000000 | Diodes Incorporated | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | DMN3024 | MOSFET (Metal Oxide) | 8-SO | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 6.4A (Ta) | 4.5V, 10V | 24mOhm @ 7A, 10V | 3V @ 250µA | 12.9 nC @ 10 V | ±20V | 608 pF @ 15 V | - | 1.6W (Ta) | ||||||||||||
 |
NVMYS2D4N04CTWG | 2.0400 | |
3121 | 0.00000000 | onsemi | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1023, 4-LFPAK | NVMYS2 | MOSFET (Metal Oxide) | LFPAK4 (5x6) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 40 V | 30A (Ta), 138A (Tc) | 10V | 2.3mOhm @ 50A, 10V | 3.5V @ 90µA | 32 nC @ 10 V | ±20V | 2100 pF @ 25 V | - | 3.9W (Ta), 83W (Tc) | ||||||||||||
 |
FDS6690AS | - | |
7110 | 0.00000000 | onsemi | PowerTrench®, SyncFET™ | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | FDS6690 | MOSFET (Metal Oxide) | 8-SOIC | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 10A (Ta) | 4.5V, 10V | 12mOhm @ 10A, 10V | 3V @ 1mA | 23 nC @ 10 V | ±20V | 910 pF @ 15 V | - | 2.5W (Ta) | ||||||||||||
 |
SIHG16N50C-E3 | 4.5900 | |
5230 | 0.00000000 | Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | SIHG16 | MOSFET (Metal Oxide) | TO-247AC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 500 | N-Channel | 500 V | 16A (Tc) | 10V | 380mOhm @ 8A, 10V | 5V @ 250µA | 68 nC @ 10 V | ±30V | 1900 pF @ 25 V | - | 250W (Tc) | |||||||||||||
 |
IXTH200N075T | - | |
6808 | 0.00000000 | IXYS | - | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | IXTH200 | MOSFET (Metal Oxide) | TO-247 (IXTH) | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 75 V | 200A (Tc) | 10V | 5mOhm @ 25A, 10V | 4V @ 250µA | 160 nC @ 10 V | ±20V | 6800 pF @ 25 V | - | 430W (Tc) | |||||||||||||
 |
SSM3J355R,LF | 0.4200 | |
51 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SSM3J355 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 6A (Ta) | 1.8V, 4.5V | 30.1mOhm @ 4A, 4.5V | 1V @ 1mA | 16.6 nC @ 4.5 V | ±10V | 1030 pF @ 10 V | - | 1W (Ta) | |||||||||||||
|
IXTH48N15 | - | |
4222 | 0.00000000 | IXYS | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IXTH48 | MOSFET (Metal Oxide) | TO-247 (IXTH) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 150 V | 48A (Tc) | 10V | 32mOhm @ 500mA, 10V | - | 140 nC @ 10 V | ±20V | 3200 pF @ 25 V | - | 180W (Tc) | ||||||||||||
 |
IRFBF20PBF | 2.4100 | |
996 | 0.00000000 | Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | IRFBF20 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | *IRFBF20PBF | EAR99 | 8541.29.0095 | 50 | N-Channel | 900 V | 1.7A (Tc) | 10V | 8Ohm @ 1A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 490 pF @ 25 V | - | 54W (Tc) | ||||||||||||
 |
ATF-38143-TR1G | - | |
9918 | 0.00000000 | Broadcom Limited | - | Tape & Reel (TR) | Obsolete | 4.5 V | SC-82A, SOT-343 | ATF-38143 | 2GHz | pHEMT FET | SOT-343, SC70 4-Lead | - | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0075 | 3,000 | 145mA | 10 mA | 12dBm | 16dB | 0.4dB | 2 V | ||||||||||||||||||
|
ATF-58143-TR1G | - | |
1545 | 0.00000000 | Broadcom Limited | - | Tape & Reel (TR) | Obsolete | 5 V | SC-82A, SOT-343 | ATF-58143 | 2GHz | pHEMT FET | SOT-343 | - | 1 (Unlimited) | REACH Unaffected | 5A991G | 8541.21.0075 | 3,000 | 100mA | 30 mA | 19dBm | 16.5dB | 0.5dB | 3 V | ||||||||||||||||||
 |
ZVN4106FTA | 0.6000 | |
8 | 0.00000000 | Diodes Incorporated | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | ZVN4106 | MOSFET (Metal Oxide) | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 60 V | 200mA (Ta) | 5V, 10V | 2.5Ohm @ 500mA, 10V | 3V @ 1mA | ±20V | 35 pF @ 25 V | - | 350mW (Ta) | |||||||||||||
 |
IXFK44N80P | 21.2900 | |
6754 | 0.00000000 | IXYS | HiPerFET™, Polar | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | IXFK44 | MOSFET (Metal Oxide) | TO-264AA (IXFK) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 25 | N-Channel | 800 V | 44A (Tc) | 10V | 190mOhm @ 22A, 10V | 5V @ 8mA | 198 nC @ 10 V | ±30V | 12000 pF @ 25 V | - | 1040W (Tc) | ||||||||||||
 |
SSM6N44FU,LF | 0.3600 | |
15 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SSM6N44 | MOSFET (Metal Oxide) | 200mW (Ta) | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 30V | 100mA (Ta) | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 8.5pF @ 3V | - |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
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