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FETs, MOSFETs(56295)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRF3305PBF | - |  |
5819 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 55 V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±20V | 3650 pF @ 25 V | - | 330W (Tc) | ||||
 |
IRF4104SPBF | 2.2100 | |
1059 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Not For New Designs | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IRF4104 | MOSFET (Metal Oxide) | D2PAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 40 V | 75A (Tc) | 10V | 5.5mOhm @ 75A, 10V | 4V @ 250µA | 100 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 140W (Tc) | ||
 |
IRFI9634GPBF | 3.0900 | |
2 | 0.00000000 | Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | IRFI9634 | MOSFET (Metal Oxide) | TO-220-3 | download | ROHS3 Compliant | 1 (Unlimited) | *IRFI9634GPBF | EAR99 | 8541.29.0095 | 50 | P-Channel | 250 V | 4.1A (Tc) | 10V | 1Ohm @ 2.5A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 680 pF @ 25 V | - | 35W (Tc) | ||
|
IRFI9530GPBF | 2.3000 | |
4 | 0.00000000 | Vishay Siliconix | - | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | IRFI9530 | MOSFET (Metal Oxide) | TO-220-3 | download | ROHS3 Compliant | 1 (Unlimited) | *IRFI9530GPBF | EAR99 | 8541.29.0095 | 50 | P-Channel | 100 V | 7.7A (Tc) | 10V | 300mOhm @ 4.6A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 42W (Tc) | ||
 |
IRL540SPBF | 2.7000 | |
215 | 0.00000000 | Vishay Siliconix | - | Tube | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IRL540 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | ROHS3 Compliant | 1 (Unlimited) | *IRL540SPBF | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 28A (Tc) | 4V, 5V | 77mOhm @ 17A, 5V | 2V @ 250µA | 64 nC @ 5 V | ±10V | 2200 pF @ 25 V | - | 3.7W (Ta), 150W (Tc) | ||
|
IRFS17N20DPBF | - | |
2520 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 200 V | 16A (Tc) | 10V | 170mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 3.8W (Ta), 140W (Tc) | ||||
|
IRF740ASPBF | 2.6000 | |
4674 | 0.00000000 | Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IRF740 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | ROHS3 Compliant | 1 (Unlimited) | *IRF740ASPBF | EAR99 | 8541.29.0095 | 50 | N-Channel | 400 V | 10A (Tc) | 10V | 550mOhm @ 6A, 10V | 4V @ 250µA | 36 nC @ 10 V | ±30V | 1030 pF @ 25 V | - | 3.1W (Ta), 125W (Tc) | ||
 |
IRFBC30PBF | 1.7300 | |
17 | 0.00000000 | Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | IRFBC30 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | *IRFBC30PBF | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 4V @ 250µA | 31 nC @ 10 V | ±20V | 660 pF @ 25 V | - | 74W (Tc) | ||
|
IRFI630GPBF | 2.9500 | |
2 | 0.00000000 | Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | IRFI630 | MOSFET (Metal Oxide) | TO-220-3 | download | ROHS3 Compliant | 1 (Unlimited) | *IRFI630GPBF | EAR99 | 8541.29.0095 | 50 | N-Channel | 200 V | 5.9A (Tc) | 10V | 400mOhm @ 3.5A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±20V | 800 pF @ 25 V | - | 35W (Tc) | ||
 |
IRF840ALPBF | 2.7800 | |
475 | 0.00000000 | Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | IRF840 | MOSFET (Metal Oxide) | I2PAK | download | ROHS3 Compliant | 1 (Unlimited) | *IRF840ALPBF | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±30V | 1018 pF @ 25 V | - | 3.1W (Ta), 125W (Tc) | ||
|
IRFB4215PBF | - | |
4684 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 115A (Tc) | 10V | 9mOhm @ 54A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 4080 pF @ 25 V | - | 270W (Tc) | ||||
|
IRF3315SPBF | - | |
4629 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Discontinued at SIC | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 150 V | 21A (Tc) | 10V | 82mOhm @ 12A, 10V | 4V @ 250µA | 95 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.8W (Ta), 94W (Tc) | |||
 |
IRF3315LPBF | - | |
5636 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | TO-262 | download | 1 (Unlimited) | REACH Unaffected | *IRF3315LPBF | EAR99 | 8541.29.0095 | 50 | N-Channel | 150 V | 21A (Tc) | 10V | 82mOhm @ 12A, 10V | 4V @ 250µA | 95 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.8W (Ta), 94W (Tc) | |||
|
IRFB33N15DPBF | - | |
1284 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 150 V | 33A (Tc) | 10V | 56mOhm @ 20A, 10V | 5.5V @ 250µA | 90 nC @ 10 V | ±30V | 2020 pF @ 25 V | - | 3.8W (Ta), 170W (Tc) | |||
|
IRL1104SPBF | - | |
7675 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 40 V | 104A (Tc) | 4.5V, 10V | 8mOhm @ 62A, 10V | 1V @ 250µA | 68 nC @ 4.5 V | ±16V | 3445 pF @ 25 V | - | 2.4W (Ta), 167W (Tc) | ||||
|
IRF4905PBF | 2.8100 | |
76 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | IRF4905 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | P-Channel | 55 V | 74A (Tc) | 10V | 20mOhm @ 38A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 3400 pF @ 25 V | - | 200W (Tc) | ||
|
IRFI740GPBF | 2.9300 | |
5 | 0.00000000 | Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | IRFI740 | MOSFET (Metal Oxide) | TO-220-3 | download | ROHS3 Compliant | 1 (Unlimited) | *IRFI740GPBF | EAR99 | 8541.29.0095 | 50 | N-Channel | 400 V | 5.4A (Tc) | 10V | 550mOhm @ 3.2A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±20V | 1370 pF @ 25 V | - | 40W (Tc) | ||
|
IRFS11N50APBF | 2.9400 | |
445 | 0.00000000 | Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IRFS11 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 75 | N-Channel | 500 V | 11A (Tc) | 10V | 520mOhm @ 6.6A, 10V | 4V @ 250µA | 52 nC @ 10 V | ±30V | 1423 pF @ 25 V | - | 170W (Tc) | |||
|
IRFBC30LPBF | - | |
7674 | 0.00000000 | Vishay Siliconix | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | IRFBC30 | MOSFET (Metal Oxide) | TO-262-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | *IRFBC30LPBF | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 600 V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 4V @ 250µA | 31 nC @ 10 V | ±20V | 660 pF @ 25 V | - | 3.1W (Ta), 74W (Tc) | |
|
IRFBC30SPBF | 1.6155 | |
1175 | 0.00000000 | Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IRFBC30 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | ROHS3 Compliant | 1 (Unlimited) | *IRFBC30SPBF | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 600 V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 4V @ 250µA | 31 nC @ 10 V | ±20V | 660 pF @ 25 V | - | 3.1W (Ta), 74W (Tc) | ||
|
IRL1404ZPBF | 2.5300 | |
1 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | IRL1404 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 40 V | 75A (Tc) | 4.5V, 10V | 3.1mOhm @ 75A, 10V | 2.7V @ 250µA | 110 nC @ 5 V | ±16V | 5080 pF @ 25 V | - | 230W (Tc) | ||
|
IRF840ASPBF | 2.5500 | |
940 | 0.00000000 | Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IRF840 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | ROHS3 Compliant | 1 (Unlimited) | *IRF840ASPBF | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±30V | 1018 pF @ 25 V | - | 3.1W (Ta), 125W (Tc) | ||
|
IRL3502SPBF | - | |
8861 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 20 V | 110A (Tc) | 4.5V, 7V | 7mOhm @ 64A, 7V | 700mV @ 250µA (Min) | 110 nC @ 4.5 V | ±10V | 4700 pF @ 15 V | - | 140W (Tc) | ||||
|
IRFI840GLCPBF | 2.9600 | |
725 | 0.00000000 | Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | IRFI840 | MOSFET (Metal Oxide) | TO-220-3 | download | ROHS3 Compliant | 1 (Unlimited) | *IRFI840GLCPBF | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 4.5A (Tc) | 10V | 850mOhm @ 2.7A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 40W (Tc) | ||
|
IRFIZ48GPBF | 3.0500 | |
3 | 0.00000000 | Vishay Siliconix | - | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | IRFIZ48 | MOSFET (Metal Oxide) | TO-220-3 | download | ROHS3 Compliant | 1 (Unlimited) | *IRFIZ48GPBF | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 37A (Tc) | 10V | 18mOhm @ 22A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 50W (Tc) | ||
|
64-2092PBF | - | |
3805 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IRF3205 | MOSFET (Metal Oxide) | D2PAK | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 55 V | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 3450 pF @ 25 V | - | 170W (Tc) | |||
|
IRLI640GPBF | 3.3400 | |
4 | 0.00000000 | Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | IRLI640 | MOSFET (Metal Oxide) | TO-220-3 | download | ROHS3 Compliant | 1 (Unlimited) | *IRLI640GPBF | EAR99 | 8541.29.0095 | 50 | N-Channel | 200 V | 9.9A (Tc) | 4V, 5V | 180mOhm @ 5.9A, 5V | 2V @ 250µA | 66 nC @ 10 V | ±10V | 1800 pF @ 25 V | - | 40W (Tc) | ||
|
IRFB23N20DPBF | - | |
7283 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 200 V | 24A (Tc) | 10V | 100mOhm @ 14A, 10V | 5.5V @ 250µA | 86 nC @ 10 V | ±30V | 1960 pF @ 25 V | - | 3.8W (Ta), 170W (Tc) | |||
|
IRL1404PBF | - | |
3492 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 40 V | 160A (Tc) | 4.3V, 10V | 4mOhm @ 95A, 10V | 3V @ 250µA | 140 nC @ 5 V | ±20V | 6590 pF @ 25 V | - | 200W (Tc) | |||
|
IRF1405PBF | 3.0500 | |
15 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | IRF1405 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 55 V | 169A (Tc) | 10V | 5.3mOhm @ 101A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 5480 pF @ 25 V | - | 330W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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