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FETs, MOSFETs(56295)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Frequency | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Voltage - Test |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
WPGM0206012 | 558.6000 |  |
4 | 0.00000000 | WAVEPIA.,Co.Ltd | - | Bulk | Active | 50 V | Die | 2GHz ~ 6GHz | GaN | Die | download | ROHS3 Compliant | 1 (Unlimited) | 3140-WPGM0206012 | EAR99 | 8541.29.0040 | 1 | - | - | 610 mA | 41dBm | 9.6dB | - | 48 V | |||||||||||||||||
 |
TJ10S04M3L,LXHQ | 0.9500 | |
4099 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ10S04 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 40 V | 10A (Ta) | 6V, 10V | 44mOhm @ 5A, 10V | 3V @ 1mA | 19 nC @ 10 V | +10V, -20V | 930 pF @ 10 V | - | 27W (Tc) | ||||||||||||||
 |
TPH3206PSB | 9.8100 | |
1 | 0.00000000 | Transphorm | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TPH3206 | GaNFET (Gallium Nitride) | TO-220AB | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 16A (Tc) | 10V | 180mOhm @ 10A, 8V | 2.6V @ 500µA | 6.2 nC @ 4.5 V | ±18V | 720 pF @ 480 V | - | 81W (Tc) | ||||||||||||||
 |
ZDM4206NTA | - | |
3690 | 0.00000000 | Diodes Incorporated | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-8 | ZDM4206N | MOSFET (Metal Oxide) | 2.75W | SM8 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | 2 N-Channel (Dual) | 60V | 1A | 1Ohm @ 1.5A, 10V | 3V @ 1mA | - | 100pF @ 25V | Logic Level Gate | |||||||||||||||
 |
IRFS7540TRLPBF | 1.0000 | |
5138 | 0.00000000 | International Rectifier | HEXFET®, StrongIRFET™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | PG-TO263-3 | download | EAR99 | 8542.39.0001 | 212 | N-Channel | 60 V | 110A (Tc) | 6V, 10V | 5.1mOhm @ 65A, 10V | 3.7V @ 100µA | 130 nC @ 10 V | ±20V | 4555 pF @ 25 V | - | 160W (Tc) | ||||||||||||||||
|
IRLR3114ZPBF | 1.0000 | |
2739 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | D-Pak | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 40 V | 42A (Tc) | 4.5V, 10V | 4.9mOhm @ 42A, 10V | 2.5V @ 100µA | 56 nC @ 4.5 V | ±16V | 3810 pF @ 25 V | - | 140W (Tc) | |||||||||||||
 |
MCP90N06Y-BP | 1.1100 | |
4 | 0.00000000 | Micro Commercial Co | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MCP90 | MOSFET (Metal Oxide) | TO-220AB (H) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 353-MCP90N06Y-BP | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 60 V | 90A | 4.5V, 10V | 7.5mOhm @ 20A, 10V | 2.5V @ 250µA | 34 nC @ 10 V | ±20V | 2000 pF @ 35 V | - | 83W | |||||||||||
|
AUIRF1404ZS | 1.5300 | |
993 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 40 V | 160A (Tc) | 10V | 3.7mOhm @ 75A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±20V | 4340 pF @ 25 V | - | 200W (Tc) | ||||||||||||||||
 |
IPB017N08N5ATMA1 | 6.8200 | |
483 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IPB017 | MOSFET (Metal Oxide) | PG-TO263-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 80 V | 120A (Tc) | 6V, 10V | 1.7mOhm @ 100A, 10V | 3.8V @ 280µA | 223 nC @ 10 V | ±20V | 16900 pF @ 40 V | - | 375W (Tc) | ||||||||||||
 |
IXFA4N100Q-TRL | 4.3052 | |
9053 | 0.00000000 | IXYS | HiPerFET™, Q Class | Tape & Reel (TR) | Not For New Designs | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IXFA4N100 | MOSFET (Metal Oxide) | TO-263AA (IXFA) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | N-Channel | 1000 V | 4A (Tc) | 10V | 3Ohm @ 2A, 10V | 4.5V @ 1.5mA | 39 nC @ 10 V | ±20V | 1050 pF @ 25 V | - | 150W (Tc) | ||||||||||||
 |
NDS8936 | - | |
3558 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | NDS893 | MOSFET (Metal Oxide) | 900mW | 8-SOIC | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 2,500 | 2 N-Channel (Dual) | 30V | 5.3A | 35mOhm @ 5.3A, 10V | 2.8V @ 250µA | 30nC @ 10V | 720pF @ 15V | Logic Level Gate | |||||||||||||||
|
NDS8435 | - | |
5967 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Obsolete | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | NDS843 | MOSFET (Metal Oxide) | 8-SOIC | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 30 V | 7A (Ta) | 28mOhm @ 7A, 10V | 3V @ 250µA | 60 nC @ 10 V | 1500 pF @ 15 V | - | ||||||||||||||||
|
NDS8434 | - | |
2155 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | NDS843 | MOSFET (Metal Oxide) | 8-SOIC | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 20 V | 6.5A (Ta) | 2.7V, 4.5V | 35mOhm @ 6.5A, 4.5V | 1V @ 250µA | 80 nC @ 4.5 V | ±8V | 2330 pF @ 10 V | - | 2.5W (Ta) | ||||||||||||
 |
NDT452P | - | |
6414 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Obsolete | Surface Mount | TO-261-4, TO-261AA | NDT452 | MOSFET (Metal Oxide) | SOT-223-4 | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 30 V | 3A (Ta) | 180mOhm @ 3A, 10V | 3V @ 250µA | 25 nC @ 10 V | 525 pF @ 10 V | - | ||||||||||||||||
 |
IRFH7194TRPBF | - | |
5509 | 0.00000000 | International Rectifier | FASTIRFET™, HEXFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 8-PQFN (5x6) | download | Not applicable | 1 (Unlimited) | REACH Unaffected | EAR99 | 0000.00.0000 | 1 | N-Channel | 100 V | 11A (Ta), 35A (Tc) | 10V | 16.4mOhm @ 21A, 10V | 3.6V @ 50µA | 19 nC @ 10 V | ±20V | 733 pF @ 50 V | - | 3.6W (Ta), 39W (Tc) | |||||||||||||
 |
WPGM1517050 | 1.0000 | |
4 | 0.00000000 | WAVEPIA.,Co.Ltd | - | Bulk | Active | 32 V | Die | 15GHz ~ 17GHz | GaN | Die | download | ROHS3 Compliant | 1 (Unlimited) | 3140-WPGM1517050 | DISC 3A001B3 | 8541.29.0040 | 1 | - | - | 720 mA | 46.65dBm | 19dB | - | 28 V | |||||||||||||||||
 |
TPCA8008-H(TE12L,Q | - | |
6043 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCA8008 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 250 V | 4A (Ta) | 10V | 580mOhm @ 2A, 10V | 4V @ 1mA | 10 nC @ 10 V | ±20V | 600 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | ||||||||||||||
 |
SI2302CDS-T1-E3 | 0.4100 | |
137 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SI2302 | MOSFET (Metal Oxide) | SOT-23-3 (TO-236) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 2.6A (Ta) | 2.5V, 4.5V | 57mOhm @ 3.6A, 4.5V | 850mV @ 250µA | 5.5 nC @ 4.5 V | ±8V | - | 710mW (Ta) | |||||||||||||
 |
IRFI840G | - | |
4585 | 0.00000000 | Vishay Siliconix | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | IRFI840 | MOSFET (Metal Oxide) | TO-220-3 | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | *IRFI840G | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 500 V | 4.6A (Tc) | 10V | 850mOhm @ 2.8A, 10V | 4V @ 250µA | 67 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 40W (Tc) | |||||||||||
 |
IRF7102 | - | |
4981 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Obsolete | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | IRF71 | MOSFET (Metal Oxide) | 2W | 8-SO | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 95 | 2 N-Channel (Dual) | 50V | 2A | 300mOhm @ 1.5A, 10V | 3V @ 250µA | 6.6nC @ 10V | 120pF @ 25V | - | |||||||||||||||
|
AUIRL1404STRL | 1.7900 | |
820 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | D-PAK (TO-252AA) | download | Not applicable | 1 (Unlimited) | REACH Unaffected | EAR99 | 0000.00.0000 | 1 | N-Channel | 40 V | 160A (Tc) | 4.3V, 10V | 4mOhm @ 95A, 10V | 3V @ 250µA | 140 nC @ 5 V | ±20V | 6600 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | |||||||||||||
|
IXTY1R6N50D2 | 3.0700 | |
16 | 0.00000000 | IXYS | Depletion | Tube | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IXTY1 | MOSFET (Metal Oxide) | TO-252AA | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 70 | N-Channel | 500 V | 1.6A (Tc) | - | 2.3Ohm @ 800mA, 0V | - | 23.7 nC @ 5 V | ±20V | 645 pF @ 25 V | Depletion Mode | 100W (Tc) | ||||||||||||
 |
IRF6668TRPBF | 0.9400 | |
59 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | MOSFET (Metal Oxide) | DIRECTFET™ MZ | download | EAR99 | 8541.29.0095 | 318 | N-Channel | 80 V | 55A (Tc) | 10V | 15mOhm @ 12A, 10V | 4.9V @ 100µA | 31 nC @ 10 V | ±20V | 1320 pF @ 25 V | - | 2.8W (Ta), 89W (Tc) | ||||||||||||||||
 |
IXTH52P10P | 8.4800 | |
301 | 0.00000000 | IXYS | PolarP™ | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IXTH52 | MOSFET (Metal Oxide) | TO-247 (IXTH) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | P-Channel | 100 V | 52A (Tc) | 10V | 50mOhm @ 52A, 10V | 4.5V @ 250µA | 60 nC @ 10 V | ±20V | 2845 pF @ 25 V | - | 300W (Tc) | ||||||||||||
 |
RW1C025ZPT2CR | 0.4700 | |
5 | 0.00000000 | Rohm Semiconductor | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | RW1C025 | MOSFET (Metal Oxide) | 6-WEMT | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 8,000 | P-Channel | 20 V | 2.5A (Ta) | 1.5V, 4.5V | 65mOhm @ 2.5A, 4.5V | 1V @ 1mA | 21 nC @ 4.5 V | ±10V | 1300 pF @ 10 V | - | 700mW (Ta) | ||||||||||||
 |
IPD65R420CFDATMA2 | 1.0650 | |
8558 | 0.00000000 | Infineon Technologies | CoolMOS™ CFD2 | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-251-3 Short Leads, IPak, TO-251AA | IPD65R420 | MOSFET (Metal Oxide) | PG-TO251-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 650 V | 8.7A (Tc) | 10V | 420mOhm @ 3.4A, 10V | 4.5V @ 300µA | 31.5 nC @ 10 V | ±20V | 870 pF @ 100 V | - | 83.3W (Tc) | ||||||||||||
|
IXTY01N80 | - | |
2283 | 0.00000000 | IXYS | - | Tube | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IXTY01 | MOSFET (Metal Oxide) | TO-252AA | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 800 V | 100mA (Tc) | 10V | 50Ohm @ 100mA, 10V | 4.5V @ 25µA | 8 nC @ 10 V | ±20V | 60 pF @ 25 V | - | 25W (Tc) | ||||||||||||
|
LSIC1MO120T0080-TU | 15.9640 | |
8494 | 0.00000000 | IXYS | - | Tube | Active | - | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | LSIC1MO120 | SiC (Silicon Carbide Junction Transistor) | TO-263-7 | download | 238-LSIC1MO120T0080-TU | EAR99 | 8541.29.0095 | 400 | N-Channel | 1200 V | 39A (Tc) | - | - | - | - | - | - | ||||||||||||||||
|
TJ30S06M3L,LXHQ | 1.2000 | |
137 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ30S06 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 60 V | 30A (Ta) | 6V, 10V | 21.8mOhm @ 15A, 10V | 3V @ 1mA | 80 nC @ 10 V | +10V, -20V | 3950 pF @ 10 V | - | 68W (Tc) | ||||||||||||||
|
UPA2650T1E-E2-AT | 0.4900 | |
270 | 0.00000000 | Renesas Electronics America Inc | - | Bulk | Obsolete | Surface Mount | 6-VDFN Exposed Pad | UPA2650 | MOSFET (Metal Oxide) | 1.1W | 6-MLP (3x3) | download | ROHS3 Compliant | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Dual) | 20V | 3.8A | 65mOhm @ 3A, 10V | 2V @ 250µA | 2.9nC @ 4.5V | 220pF @ 10V | Logic Level Gate |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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