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Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Frequency | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Voltage - Test |
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SIR680LDP-T1-RE3 | 2.3400 | 6 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | SIR680 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | - | 1 (Unlimited) | 742-SIR680LDP-T1-RE3TR | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 80 V | 31.8A (Ta), 130A (Tc) | 4.5V, 10V | 2.8mOhm @ 20A, 10V | 2.5V @ 250µA | 135 nC @ 10 V | ±20V | 7250 pF @ 40 V | - | 6.25W (Ta), 104W (Tc) | ||||||||||||||
EPC2059 | 4.4500 | 32 | 0.00000000 | EPC | eGaN® | Tape & Reel (TR) | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | EPC20 | GaNFET (Gallium Nitride) | Die | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0040 | 2,500 | N-Channel | 170 V | 24A (Ta) | 5V | 9mOhm @ 10A, 5V | 2.5V @ 3mA | 7.4 nC @ 5 V | +6V, -4V | 836 pF @ 85 V | - | - | |||||||||||||
IPW65R041CFD7XKSA1 | 12.3700 | 160 | 0.00000000 | Infineon Technologies | CoolMOS™ CFD7 | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IPW65R041 | MOSFET (Metal Oxide) | PG-TO247-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 50A (Tc) | 10V | 41mOhm @ 24.8A, 10V | 4.5V @ 1.24mA | 102 nC @ 10 V | ±20V | 4975 pF @ 400 V | - | 227W (Tc) | |||||||||||||
IPZA65R029CFD7XKSA1 | 15.4500 | 230 | 0.00000000 | Infineon Technologies | CoolMOS™ CFD7 | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | IPZA65 | MOSFET (Metal Oxide) | PG-TO247-4-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 69A (Tc) | 10V | 29mOhm @ 35.8A, 10V | 4.5V @ 1.79mA | 145 nC @ 10 V | ±20V | 7149 pF @ 400 V | - | 305W (Tc) | |||||||||||||
IQE013N04LM6CGATMA1 | 2.8200 | 2 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerTDFN | IQE013 | MOSFET (Metal Oxide) | PG-TTFN-9-1 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 40 V | 31A (Ta), 205A (Tc) | 4.5V, 10V | 1.35mOhm @ 20A, 10V | 2V @ 51µA | 55 nC @ 10 V | ±20V | 3900 pF @ 20 V | - | 2.5W (Ta), 107W (Tc) | |||||||||||||
IPP65R060CFD7XKSA1 | 9.0200 | 532 | 0.00000000 | Infineon Technologies | CoolMOS™ CFD7 | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | IPP65R060 | MOSFET (Metal Oxide) | PG-TO220-3-1 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 36A (Tc) | 10V | 60mOhm @ 16.4A, 10V | 4.5V @ 860µA | 68 nC @ 10 V | ±20V | 3288 pF @ 400 V | - | 171W (Tc) | |||||||||||||
BLM9D2022-08AMZ | 20.0900 | 1 | 0.00000000 | Ampleon USA Inc. | - | Tape & Reel (TR) | Active | 65 V | Surface Mount | 20-VLGA Exposed Pad | BLM9 | 2.11GHz ~ 2.17GHz | LDMOS | 20-LGA (7x7) | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8542.39.0001 | 1,000 | - | - | - | 26.6dB | - | ||||||||||||||||||
NVMFS5C404NWFT1G-M | - | 1346 | 0.00000000 | onsemi | Automotive, AEC-Q101 | Tape & Reel (TR) | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | MOSFET (Metal Oxide) | 5-DFN (5x6) (8-SOFL) | - | ROHS3 Compliant | REACH Unaffected | 488-NVMFS5C404NWFT1G-MTR | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 40 V | 53A (Ta), 378A (Tc) | 10V | 0.7mOhm @ 50A, 10V | 4V @ 250µA | 128 nC @ 10 V | ±20V | 8400 pF @ 25 V | - | 3.9W (Ta), 200W (Tc) | ||||||||||||||
IRL40S212ARMA1 | 1.1938 | 6751 | 0.00000000 | Infineon Technologies | HEXFET®, StrongIRFET™ | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IRL40S212 | MOSFET (Metal Oxide) | PG-TO263-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | N-Channel | 40 V | 195A (Tc) | 4.5V, 10V | 1.9mOhm @ 100A, 10V | 2.4V @ 150µA | 137 nC @ 4.5 V | ±20V | 8320 pF @ 25 V | - | 231W (Tc) | |||||||||||||
AUIRF7207Q | - | 2173 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | 8-SO | download | EAR99 | 8541.29.0095 | 1 | P-Channel | 20 V | 5.4A (Ta) | 2.7V, 4.5V | 60mOhm @ 5.4A, 4.5V | 1.6V @ 250µA | 22 nC @ 4.5 V | ±12V | 780 pF @ 15 V | - | 2.5W (Ta) | |||||||||||||||||
AUIRFS8409TRL | - | 3374 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | PG-TO263-3 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 40 V | 195A (Tc) | 10V | 1.2mOhm @ 100A, 10V | 3.9V @ 250µA | 450 nC @ 10 V | ±20V | 14240 pF @ 25 V | - | 375W (Tc) | |||||||||||||||||
BUK9Y11-30B,115 | - | 7160 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | BUK9 | - | ROHS3 Compliant | REACH Unaffected | EAR99 | 8541.29.0095 | 1,500 | ||||||||||||||||||||||||||||||
FCPF380N60E | 1.0000 | 3434 | 0.00000000 | Fairchild Semiconductor | SuperFET® II | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | FCPF380 | MOSFET (Metal Oxide) | TO-220F | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 600 V | 10.2A (Tc) | 10V | 380mOhm @ 5A, 10V | 3.5V @ 250µA | 45 nC @ 10 V | ±20V | 1770 pF @ 25 V | - | 31W (Tc) | ||||||||||||||||
AUIRFZ24NSTRL | 1.1000 | 92 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | D-PAK (TO-252AA) | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 55 V | 17A (Tc) | 10V | 70mOhm @ 10A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 370 pF @ 25 V | - | 3.8W (Ta), 45W (Tc) | |||||||||||||||||
FCU850N80Z | 1.1700 | 1 | 0.00000000 | Fairchild Semiconductor | SuperFET® II | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | I-PAK | download | EAR99 | 8542.39.0001 | 257 | N-Channel | 800 V | 6A (Tc) | 10V | 850mOhm @ 3A, 10V | 4.5V @ 600µA | 29 nC @ 10 V | ±20V | 1315 pF @ 100 V | - | 75W (Tc) | |||||||||||||||||
BSZ12DN20NS3G | 1.0000 | 1363 | 0.00000000 | Infineon Technologies | OptiMOS™ 3 | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 200 V | 11.3A (Tc) | 10V | 125mOhm @ 5.7A, 10V | 4V @ 25µA | 8.7 nC @ 10 V | ±20V | 680 pF @ 100 V | - | 50W (Tc) | |||||||||||||||||
BUK7610-100B,118 | - | 4013 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | BUK76 | - | ROHS3 Compliant | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | ||||||||||||||||||||||||||||||
FDP6030BL | 0.6300 | 2 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -65°C ~ 175°C (TJ) | Through Hole | TO-220-3 | FDP60 | MOSFET (Metal Oxide) | TO-220-3 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 30 V | 40A (Tc) | 4.5V, 10V | 18mOhm @ 20A, 10V | 3V @ 250µA | 17 nC @ 5 V | ±20V | 1160 pF @ 15 V | - | 60W (Tc) | ||||||||||||||||
BUK763R8-80E118 | 1.0000 | 4080 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | download | EAR99 | 8541.29.0095 | 1 | |||||||||||||||||||||||||||||||||
BTS244ZE3062ANTMA1 | 0.4500 | 24 | 0.00000000 | Infineon Technologies | * | Bulk | Active | -40°C ~ 175°C (TJ) | Surface Mount | TO-263-5, D²Pak (4 Leads + Tab), TO-263BB | MOSFET (Metal Oxide) | PG-TO263-5-2 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 55 V | 35A (Tc) | 4.5V, 10V | 13mOhm @ 19A, 10V | 2V @ 130µA | 130 nC @ 10 V | ±20V | 2660 pF @ 25 V | - | 170W (Tc) | |||||||||||||||||
FCH077N65F-F155 | 6.0400 | 66 | 0.00000000 | Fairchild Semiconductor | FRFET®, SuperFET® II | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | download | EAR99 | 8542.39.0001 | 66 | N-Channel | 650 V | 54A (Tc) | 10V | 77mOhm @ 27A, 10V | 5V @ 5.4mA | 164 nC @ 10 V | ±20V | 7109 pF @ 100 V | - | 481W (Tc) | |||||||||||||||||
A2T20H160W04NR3528 | 94.8200 | 3 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | download | EAR99 | 8541.29.0075 | 1 | |||||||||||||||||||||||||||||||||
1IRF3710PBF | 1.0000 | 4010 | 0.00000000 | Infineon Technologies | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | 0000.00.0000 | 1 | N-Channel | 100 V | 57A (Tc) | 10V | 23mOhm @ 28A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 3130 pF @ 25 V | - | 200W (Tc) | ||||||||||||||||||
AUIRFS4310ZTRL | 3.1700 | 79 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | AUIRFS4310 | MOSFET (Metal Oxide) | D2PAK | download | EAR99 | 8541.29.0095 | 95 | N-Channel | 100 V | 120A (Tc) | 10V | 6mOhm @ 75A, 10V | 4V @ 150µA | 170 nC @ 10 V | ±20V | 6860 pF @ 50 V | - | 250W (Tc) | ||||||||||||||||
AUIRFSL8407 | 1.0000 | 7931 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | TO-262 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 40 V | 195A (Tc) | 10V | 2mOhm @ 100A, 10V | 4V @ 150µA | 225 nC @ 10 V | ±20V | 7330 pF @ 25 V | - | 230W (Tc) | |||||||||||||||||
BLF8G27LS-100V,112 | 52.4000 | 50 | 0.00000000 | NXP USA Inc. | - | Bulk | Active | 65 V | Chassis Mount | SOT-1244B | 2.5GHz ~ 2.7GHz | LDMOS | CDFM6 | download | EAR99 | 8541.29.0075 | 6 | - | 900 mA | 25W | 17dB | - | 28 V | |||||||||||||||||||||
FDB024N06 | - | 8933 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 60 V | 120A (Tc) | 10V | 2.4mOhm @ 75A, 10V | 4.5V @ 250µA | 226 nC @ 10 V | ±20V | 14885 pF @ 25 V | - | 395W (Tc) | |||||||||||||||||
FCPF7N60NT | 1.4900 | 6 | 0.00000000 | Fairchild Semiconductor | SupreMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F-3 | download | EAR99 | 8541.29.0095 | 202 | N-Channel | 600 V | 6.8A (Tc) | 10V | 520mOhm @ 3.4A, 10V | 4V @ 250µA | 35.6 nC @ 10 V | ±30V | 960 pF @ 100 V | - | 30.5W (Tc) | |||||||||||||||||
FQPF9N25C | - | 5673 | 0.00000000 | Fairchild Semiconductor | QFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F-3 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 250 V | 8.8A (Tc) | 10V | 430mOhm @ 4.4A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±30V | 710 pF @ 25 V | - | 38W (Tc) | |||||||||||||||||
IRFB3307ZPBF | 1.0000 | 2506 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | PG-TO220-3-904 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 75 V | 120A (Tc) | 10V | 5.8mOhm @ 75A, 10V | 4V @ 1.037mA | 110 nC @ 10 V | ±20V | 4750 pF @ 50 V | - | 230W (Tc) |
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