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FETs, MOSFETs(56295)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Frequency | Technology | Power - Max | Supplier Device Package | DataSheet | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Voltage - Test |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDP12N50NZ | - |  |
9483 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220-3 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 500 V | 11.5A (Tc) | 10V | 520mOhm @ 5.75A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±25V | 1235 pF @ 25 V | - | 170W (Tc) | |||||||||||||
 |
FDB13AN06A0 | - | |
8081 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK (TO-263) | download | 0000.00.0000 | 1 | N-Channel | 60 V | 10.9A (Ta), 62A (Tc) | 6V, 10V | 13.5mOhm @ 62A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±20V | 1350 pF @ 25 V | - | 115W (Tc) | ||||||||||||||
 |
FDMS3600S | - | |
6104 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | FDMS3600 | MOSFET (Metal Oxide) | 2.2W (Ta), 2.5W (Ta) | 8-PQFN (5x6) | download | EAR99 | 8542.39.0001 | 1 | 2 N-Channel (Dual) Asymmetrical | 25V | 15A (Ta), 30A (Tc), 30A (Ta), 40A (Tc) | 5.6mOhm @ 15A, 10V, 1.6mOhm @ 30A, 10V | 2.7V @ 250µA, 3V @ 1mA | 27nC @ 10V, 82nC @ 10V | 1680pF @13V, 5375pF @ 13V | - | ||||||||||||||
|
HUF76407D3ST | - | |
2034 | 0.00000000 | Fairchild Semiconductor | UltraFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252, (D-Pak) | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 60 V | 12A (Tc) | 4.5V, 10V | 92mOhm @ 13A, 10V | 3V @ 250µA | 11.3 nC @ 10 V | ±16V | 350 pF @ 25 V | - | 38W (Tc) | |||||||||||||
|
PHB110NQ08T,118 | 1.0400 | |
750 | 0.00000000 | NXP USA Inc. | TrenchMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | EAR99 | 8541.29.0095 | 290 | N-Channel | 75 V | 75A (Tc) | 10V | 9mOhm @ 25A, 10V | 4V @ 1mA | 113.1 nC @ 10 V | ±20V | 4860 pF @ 25 V | - | 230W (Tc) | |||||||||||||
 |
IRF8327STRPBF | - | |
7296 | 0.00000000 | International Rectifier | - | Bulk | Active | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SQ | MOSFET (Metal Oxide) | DIRECTFET™ SQ | download | EAR99 | 8542.39.0001 | 506 | N-Channel | 30 V | 14A (Ta), 60A (Tc) | 4.5V, 10V | 7.3mOhm @ 14A, 10V | 2.4V @ 25µA | 14 nC @ 4.5 V | ±20V | 1430 pF @ 15 V | - | 2.2W (Ta), 42W (Tc) | |||||||||||||
 |
MRF6VP11KHR5 | - | |
9462 | 0.00000000 | Freescale Semiconductor | - | Bulk | Active | 110 V | Chassis Mount | NI-1230S-4 GW | 130MHz | LDMOS | NI-1230S-4 GULL | download | EAR99 | 8541.29.0075 | 1 | Dual | - | 150 mA | 1000W | 26dB | - | 50 V | ||||||||||||||||
 |
MRF7S24250NR3 | 151.2300 | |
250 | 0.00000000 | Freescale Semiconductor | - | Bulk | Active | 65 V | Surface Mount | OM-780-2 | 2.45GHz | LDMOS | OM-780-2 | download | EAR99 | 8541.29.0075 | 1 | - | 100 mA | 256W | 14.7dB | - | 30 V | |||||||||||||||||
|
RJK1535DPE-LE | 3.2100 | |
7 | 0.00000000 | Renesas Electronics America Inc | * | Bulk | Active | download | EAR99 | 8541.29.0095 | 1 | |||||||||||||||||||||||||||||
 |
FDS6692A | 0.5200 | |
1 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | 8-SOIC | download | EAR99 | 8542.39.0001 | 582 | N-Channel | 30 V | 9A (Ta) | 4.5V, 10V | 11.5mOhm @ 9A, 10V | 2.5V @ 250µA | 29 nC @ 10 V | ±20V | 1610 pF @ 15 V | - | 1.47W (Ta) | |||||||||||||
|
AUIRFS8407 | - | |
2797 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 40 V | 195A (Tc) | 10V | 1.8mOhm @ 100A, 10V | 4V @ 150µA | 225 nC @ 10 V | ±20V | 7330 pF @ 25 V | - | 230W (Tc) | |||||||||||||
|
BSS84AKV115 | - | |
5534 | 0.00000000 | Nexperia USA Inc. | * | Bulk | Active | BSS84 | - | download | 2156-BSS84AKV115-NEX | 0000.00.0000 | 1 | - | ||||||||||||||||||||||||||
|
AUIRFZ44ZS | - | |
7450 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 55 V | 51A (Tc) | 10V | 13.9mOhm @ 31A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±20V | 1420 pF @ 25 V | - | 80W (Tc) | |||||||||||||
|
64-2084PBF | - | |
8500 | 0.00000000 | International Rectifier | * | Bulk | Active | - | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||
|
IRFR13N15DPBF | 1.0000 | |
6627 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | D-Pak | download | 0000.00.0000 | 1 | N-Channel | 150 V | 14A (Tc) | 10V | 180mOhm @ 8.3A, 10V | 5.5V @ 250µA | 29 nC @ 10 V | ±30V | 620 pF @ 25 V | - | 86W (Tc) | ||||||||||||||
 |
FDS5670 | 1.0000 | |
5582 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | 8-SOIC | download | 0000.00.0000 | 1 | N-Channel | 60 V | 10A (Ta) | 6V, 10V | 14mOhm @ 10A, 10V | 4V @ 250µA | 70 nC @ 10 V | ±20V | 2900 pF @ 15 V | - | 2.5W (Ta) | ||||||||||||||
 |
UPA602T-T2-A | 0.1600 | |
51 | 0.00000000 | Renesas Electronics America Inc | - | Bulk | Obsolete | 150°C (TJ) | Surface Mount | SC-59-6 | UPA602 | MOSFET (Metal Oxide) | 300mW | SC-59 | download | EAR99 | 8541.21.0095 | 1 | 2 N-Channel (Dual) | 50V | 100mA | 25Ohm @ 10mA, 10V | 1.8V @ 1µA | - | 16pF @ 5V | Logic Level Gate | ||||||||||||||
 |
FDY1002PZ | - | |
1950 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | FDY1002 | MOSFET (Metal Oxide) | 446mW | SOT-563F | download | EAR99 | 8542.39.0001 | 20 | 2 P-Channel (Dual) | 20V | 830mA | 500mOhm @ 830mA, 4.5V | 1V @ 250µA | 3.1nC @ 4.5V | 135pF @ 10V | Logic Level Gate | ||||||||||||||
|
FQB19N20LTM | 1.0000 | |
5433 | 0.00000000 | Fairchild Semiconductor | QFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK (TO-263) | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 200 V | 21A (Tc) | 5V, 10V | 140mOhm @ 10.5A, 10V | 2V @ 250µA | 35 nC @ 5 V | ±20V | 2200 pF @ 25 V | - | 3.13W (Ta), 140W (Tc) | |||||||||||||
|
IRF40H210 | - | |
9970 | 0.00000000 | International Rectifier | HEXFET®, StrongIRFET™ | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | 8-PQFN (5x6) | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 40 V | 100A (Tc) | 6V, 10V | 1.7mOhm @ 100A, 10V | 3.7V @ 150µA | 152 nC @ 10 V | ±20V | 5406 pF @ 25 V | - | 125W (Tc) | |||||||||||||
|
FDS8949-F085 | - | |
8513 | 0.00000000 | Fairchild Semiconductor | Automotive, AEC-Q101, PowerTrench® | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | FDS89 | MOSFET (Metal Oxide) | 2W | 8-SOIC | download | EAR99 | 8542.39.0001 | 1 | 2 N-Channel (Dual) | 40V | 6A | 29mOhm @ 6A, 10V | 3V @ 250µA | 11nC @ 5V | 955pF @ 20V | Logic Level Gate | ||||||||||||||
 |
IPP60R600C6 | - | |
9047 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | PG-TO220-3-1 | download | 0000.00.0000 | 1 | N-Channel | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 63W (Tc) | ||||||||||||||
|
FDMS3600AS | 1.0100 | |
15 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | FDMS3600 | MOSFET (Metal Oxide) | 2.2W, 2.5W | 8-PQFN (5x6) | download | EAR99 | 8542.39.0001 | 1 | 2 N-Channel (Dual) Asymmetrical | 25V | 15A, 30A | 5.6mOhm @ 15A, 10V | 2.7V @ 250µA | 27nC @ 10V | 1770pF @ 13V | Logic Level Gate | ||||||||||||||
 |
FDZ1905PZ | 0.3400 | |
2 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-UFBGA, WLCSP | FDZ1905 | MOSFET (Metal Oxide) | 900mW | 6-WLCSP (1x1.5) | download | EAR99 | 8542.39.0001 | 1 | 2 P-Channel (Dual) | - | - | 126mOhm @ 1A, 4.5V | 1V @ 250µA | - | - | Logic Level Gate | ||||||||||||||
|
IPA65R280C6 | 1.0000 | |
5174 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | PG-TO220-3-111 | download | 0000.00.0000 | 1 | N-Channel | 650 V | 13.8A (Tc) | 10V | 280mOhm @ 4.4A, 10V | 3.5V @ 440µA | 45 nC @ 10 V | ±20V | 950 pF @ 100 V | - | 32W (Tc) | ||||||||||||||
|
RFP10N15101 | 1.0000 | |
4788 | 0.00000000 | Harris Corporation | * | Bulk | Active | - | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||
|
IPP048N04NG | - | |
9166 | 0.00000000 | Infineon Technologies | OptiMOS® 3 | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | PG-TO220-3-1 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 40 V | 70A (Tc) | 10V | 4.8mOhm @ 70A, 10V | 4V @ 200µA | 41 nC @ 10 V | ±20V | 3300 pF @ 25 V | - | 79W (Tc) | |||||||||||||
|
IRLS3036PBF | - | |
4499 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | EAR99 | 8542.39.0001 | 48 | N-Channel | 60 V | 195A (Tc) | 4.5V, 10V | 2.4mOhm @ 165A, 10V | 2.5V @ 250µA | 140 nC @ 4.5 V | ±16V | 11210 pF @ 50 V | - | 380W (Tc) | |||||||||||||
 |
PSMN009-100P,127 | - | |
9171 | 0.00000000 | Nexperia USA Inc. | TrenchMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PSMN009 | MOSFET (Metal Oxide) | TO-220AB | download | 0000.00.0000 | 1 | N-Channel | 100 V | 75A (Tc) | 10V | 8.8mOhm @ 25A, 10V | 4V @ 1mA | 156 nC @ 10 V | ±20V | 8250 pF @ 25 V | - | 230W (Tc) | |||||||||||||
 |
PMN48XP,125 | 0.1300 | |
3 | 0.00000000 | NXP Semiconductors | - | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | SC-74, SOT-457 | MOSFET (Metal Oxide) | 6-TSOP | download | 0000.00.0000 | 1 | P-Channel | 20 V | 4.1A (Ta) | 2.5V, 4.5V | 55mOhm @ 2.4A, 4.5V | 1.25V @ 250µA | 13 nC @ 4.5 V | ±12V | 1000 pF @ 10 V | - | 530mW (Ta), 6.25W (Tc) |
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