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Single FETs, MOSFETs(44971)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPD60R2K0C6BTMA1 | - |  |
8023 | 0.00000000 | Infineon Technologies | CoolMOS™ C6 | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IPD60R | MOSFET (Metal Oxide) | PG-TO252-3 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 600 V | 2.4A (Tc) | 10V | 2Ohm @ 760mA, 10V | 3.5V @ 60µA | 6.7 nC @ 10 V | ±20V | 140 pF @ 100 V | - | 22.3W (Tc) | |||
 |
NTD20N03L27G | - | |
8688 | 0.00000000 | onsemi | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | NTD20 | MOSFET (Metal Oxide) | DPAK | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 75 | N-Channel | 30 V | 20A (Ta) | 4V, 5V | 27mOhm @ 10A, 5V | 2V @ 250µA | 18.9 nC @ 10 V | ±20V | 1260 pF @ 25 V | - | 1.75W (Ta), 74W (Tc) | |||
 |
APT12057JLL | - | |
2549 | 0.00000000 | Microsemi Corporation | POWER MOS 7® | Bulk | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | APT12057 | MOSFET (Metal Oxide) | SOT-227 | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 1200 V | 19A (Tc) | 10V | 570mOhm @ 10A, 10V | 5V @ 2.5mA | 290 nC @ 10 V | ±30V | 6200 pF @ 25 V | - | 520W (Tc) | ||
 |
IPP120N08S403AKSA1 | 5.9900 | |
8 | 0.00000000 | Infineon Technologies | Automotive, AEC-Q101, OptiMOS™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | IPP120 | MOSFET (Metal Oxide) | PG-TO220-3-1 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 80 V | 120A (Tc) | 10V | 2.8mOhm @ 100A, 10V | 4V @ 223µA | 167 nC @ 10 V | ±20V | 11550 pF @ 25 V | - | 278W (Tc) | ||
 |
IXTA4N65X2 | 3.0400 | |
35 | 0.00000000 | IXYS | Ultra X2 | Tube | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IXTA4 | MOSFET (Metal Oxide) | TO-263 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 4A (Tc) | 10V | 850mOhm @ 2A, 10V | 5V @ 250µA | 8.3 nC @ 10 V | ±30V | 455 pF @ 25 V | - | 80W (Tc) | ||
 |
TSM10NC65CF C0G | 3.3400 | |
2 | 0.00000000 | Taiwan Semiconductor Corporation | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TSM10 | MOSFET (Metal Oxide) | ITO-220S | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 10A (Tc) | 10V | 900mOhm @ 2A, 10V | 4.5V @ 250µA | 34 nC @ 10 V | ±30V | 1650 pF @ 50 V | - | 45W (Tc) | ||
 |
AOWF160A60 | 1.6199 | |
9824 | 0.00000000 | Alpha & Omega Semiconductor Inc. | aMOS5™ | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | AOWF160 | MOSFET (Metal Oxide) | TO-262F | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 785-AOWF160A60 | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 24A (Tc) | 10V | 160mOhm @ 12A, 10V | 3V @ 250µA | 46 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 27.7W (Tc) | |
 |
NTD50N03RT4 | - | |
8448 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | NTD50 | MOSFET (Metal Oxide) | DPAK | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 25 V | 7.8A (Ta), 45A (Tc) | 4.5V, 11.5V | 12mOhm @ 30A, 11.5V | 2V @ 250µA | 15 nC @ 11.5 V | ±20V | 750 pF @ 12 V | - | 1.5W (Ta), 50W (Tc) | ||
 |
RJK03E3DNS-00#J5 | - | |
1777 | 0.00000000 | Renesas Electronics America Inc | - | Bulk | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerWDFN | MOSFET (Metal Oxide) | 8-HWSON (3.3x3.3) | download | ROHS3 Compliant | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 30 V | 14A (Ta) | 11.6mOhm @ 7A, 10V | - | 5.7 nC @ 4.5 V | 1050 pF @ 10 V | - | 10W (Tc) | |||||||
 |
2SJ196-T-AZ | 0.3600 | |
9 | 0.00000000 | Renesas Electronics America Inc | * | Bulk | Active | - | Not applicable | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.21.0095 | 1 | |||||||||||||||||||
 |
IRF3205ZLPBF | 1.6900 | |
4 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Not For New Designs | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | IRF3205 | MOSFET (Metal Oxide) | TO-262 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 55 V | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 3450 pF @ 25 V | - | 170W (Tc) | ||
 |
STL10LN80K5 | 1.6121 | |
8278 | 0.00000000 | STMicroelectronics | MDmesh™ K5 | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | STL10 | MOSFET (Metal Oxide) | PowerFlat™ (5x6) VHV | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 800 V | 6A (Tc) | 10V | 660mOhm @ 4A, 10V | 5V @ 100µA | 15 nC @ 10 V | ±30V | 427 pF @ 100 V | - | 42W (Tc) | ||
|
IRLR3802TRPBF | 1.0000 | |
9668 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | D-Pak | download | Not applicable | 1 (Unlimited) | REACH Unaffected | EAR99 | 0000.00.0000 | 1 | N-Channel | 12 V | 84A (Tc) | 2.8V, 4.5V | 8.5mOhm @ 15A, 4.5V | 1.9V @ 250µA | 41 nC @ 5 V | ±12V | 2490 pF @ 6 V | - | 88W (Tc) | |||
 |
SCT3040KW7TL | 38.8000 | |
8346 | 0.00000000 | Rohm Semiconductor | - | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SCT3040 | SiCFET (Silicon Carbide) | TO-263-7 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 1200 V | 56A (Tc) | 52mOhm @ 20A, 18V | 5.6V @ 10mA | 107 nC @ 18 V | +22V, -4V | 1337 pF @ 800 V | - | 267W | |||
|
SIHG33N60E-E3 | 4.1309 | |
3921 | 0.00000000 | Vishay Siliconix | E | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | SIHG33 | MOSFET (Metal Oxide) | TO-247AC | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 500 | N-Channel | 600 V | 33A (Tc) | 10V | 99mOhm @ 16.5A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±30V | 3508 pF @ 100 V | - | 278W (Tc) | ||||
 |
PSMN2R0-25MLD,115 | - | |
1642 | 0.00000000 | Nexperia USA Inc. | * | Bulk | Active | PSMN2R0 | - | 0000.00.0000 | 1 | ||||||||||||||||||||||
 |
IPU10N03LA | - | |
2304 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPU10N | MOSFET (Metal Oxide) | P-TO251-3-1 | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | SP000014984 | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 25 V | 30A (Tc) | 4.5V, 10V | 10.4mOhm @ 30A, 10V | 2V @ 20µA | 11 nC @ 5 V | ±20V | 1358 pF @ 15 V | - | 52W (Tc) | |
 |
STD96N3LLH6 | 1.3200 | |
2983 | 0.00000000 | STMicroelectronics | DeepGATE™, STripFET™ VI | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | STD96 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 80A (Tc) | 5.5V, 10V | 4.2mOhm @ 40A, 10V | 2.5V @ 250µA | 20 nC @ 4.5 V | ±20V | 2200 pF @ 25 V | - | 70W (Tc) | ||
 |
SIHG30N60E-E3 | - | |
6920 | 0.00000000 | Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | SIHG30 | MOSFET (Metal Oxide) | TO-247AC | download | ROHS3 Compliant | 1 (Unlimited) | SIHG30N60EE3 | EAR99 | 8541.29.0095 | 500 | N-Channel | 600 V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±30V | 2600 pF @ 100 V | - | 250W (Tc) | ||
|
AUIRFR2905Z | 1.6100 | |
3 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | AUIRFR2905 | MOSFET (Metal Oxide) | D-Pak | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | SP001518150 | EAR99 | 8541.29.0095 | 75 | N-Channel | 55 V | 42A (Tc) | 10V | 14.5mOhm @ 36A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±20V | 1380 pF @ 25 V | - | 110W (Tc) | |
 |
TPC8A05-H(TE12L,QM | - | |
6243 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSV-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8A05 | MOSFET (Metal Oxide) | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 10A (Ta) | 4.5V, 10V | 13.3mOhm @ 5A, 10V | 2.3V @ 1mA | 15 nC @ 10 V | ±20V | 1700 pF @ 10 V | Schottky Diode (Body) | 1W (Ta) | ||||
 |
PSMN021-100YLX | 1.0000 | |
2749 | 0.00000000 | NXP USA Inc. | - | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | MOSFET (Metal Oxide) | LFPAK56, Power-SO8 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 100 V | 49A (Tc) | 5V, 10V | 21.5mOhm @ 15A, 10V | 2.1V @ 1mA | 65.6 nC @ 10 V | ±20V | 4640 pF @ 25 V | - | 147W (Tc) | ||||||
 |
RJK1002DPN-A0#T2 | 3.2838 | |
3531 | 0.00000000 | Renesas Electronics America Inc | - | Tube | Last Time Buy | 150°C | Through Hole | TO-220-3 | RJK1002 | MOSFET (Metal Oxide) | TO-220ABA | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 25 | N-Channel | 100 V | 70A (Ta) | 10V | 7.6mOhm @ 35A, 10V | 4V @ 1mA | 94 nC @ 10 V | ±20V | 6450 pF @ 10 V | - | 150W (Ta) | ||
|
IPB110N20N3LFATMA1 | 9.7000 | |
5194 | 0.00000000 | Infineon Technologies | OptiMOS™ 3 | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IPB110 | MOSFET (Metal Oxide) | PG-TO263-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 200 V | 88A (Tc) | 10V | 11mOhm @ 88A, 10V | 4.2V @ 260µA | 76 nC @ 10 V | ±20V | 650 pF @ 100 V | - | 250W (Tc) | ||
 |
RCD075N20TL | 0.6045 | |
4169 | 0.00000000 | Rohm Semiconductor | - | Tape & Reel (TR) | Not For New Designs | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | RCD075 | MOSFET (Metal Oxide) | CPT3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 200 V | 7.5A (Tc) | 10V | 325mOhm @ 3.75A, 10V | 5.25V @ 1mA | 15 nC @ 10 V | ±30V | 755 pF @ 25 V | - | 850mW (Ta), 20W (Tc) | ||
 |
SIHB150N60E-GE3 | 3.8500 | |
9880 | 0.00000000 | Vishay Siliconix | E | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | ROHS3 Compliant | 1 (Unlimited) | 1,000 | N-Channel | 600 V | 22A (Tc) | 10V | 158mOhm @ 10A, 10V | 5V @ 250µA | 36 nC @ 10 V | ±30V | 1514 pF @ 100 V | - | 179W (Tc) | ||||||
 |
HUF76409D3ST | - | |
8446 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252-3 (DPAK) | download | RoHS non-compliant | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.29.0095 | 1 | N-Channel | 60 V | 18A (Tc) | 4.5V, 10V | 63mOhm @ 18A, 10V | 3V @ 250µA | 15 nC @ 10 V | ±16V | 485 pF @ 25 V | - | 49W (Tc) | |||
 |
TK80S04K3L(T6L1,NQ | - | |
4801 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Obsolete | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK80S04 | MOSFET (Metal Oxide) | DPAK+ | - | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 40 V | 80A (Ta) | 6V, 10V | 3.1mOhm @ 40A, 10V | 3V @ 1mA | 87 nC @ 10 V | ±20V | 4340 pF @ 10 V | - | 100W (Tc) | |||
 |
SI7104DN-T1-E3 | 0.9923 | |
9071 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | SI7104 | MOSFET (Metal Oxide) | PowerPAK® 1212-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 12 V | 35A (Tc) | 2.5V, 4.5V | 3.7mOhm @ 26.1A, 4.5V | 1.8V @ 250µA | 70 nC @ 10 V | ±12V | 2800 pF @ 6 V | - | 3.8W (Ta), 52W (Tc) | |||
 |
STP25N60M2-EP | 2.8900 | |
23 | 0.00000000 | STMicroelectronics | MDmesh™ M2-EP | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | STP25 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 497-15892-5 | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 18A (Tc) | 10V | 188mOhm @ 9A, 10V | 4.75V @ 250µA | 29 nC @ 10 V | ±25V | 1090 pF @ 100 V | - | 150W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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