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Single FETs, MOSFETs(44971)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRFL9110TRPBF-BE3 | 0.8800 |  |
1456 | 0.00000000 | Vishay Siliconix | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | IRFL9110 | MOSFET (Metal Oxide) | SOT-223 | - | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 100 V | 1.1A (Tc) | 10V | 1.2Ohm @ 660mA, 10V | 4V @ 250µA | 8.7 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 2W (Ta), 3.1W (Tc) | ||||
 |
SI3430DV-T1-BE3 | 1.2500 | |
2 | 0.00000000 | Vishay Siliconix | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SI3430 | MOSFET (Metal Oxide) | 6-TSOP | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 100 V | 1.8A (Ta) | 6V, 10V | 170mOhm @ 2.4A, 10V | 4.2V @ 250µA | 8.2 nC @ 10 V | ±20V | - | 1.14W (Ta) | |||||
 |
IPI22N03S4L-15 | 0.2400 | |
3307 | 0.00000000 | Infineon Technologies | * | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | PG-TO262-3-1 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 897 | N-Channel | 30 V | 22A (Tc) | 4.5V, 10V | 14.9mOhm @ 22A, 10V | 2.2V @ 10µA | 14 nC @ 10 V | ±16V | 980 pF @ 25 V | - | 31W (Tc) | |||
 |
SCTWA35N65G2V | 18.6800 | |
5585 | 0.00000000 | STMicroelectronics | - | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SCTWA35 | SiCFET (Silicon Carbide) | TO-247 Long Leads | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 497-SCTWA35N65G2V | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 45A (Tc) | 18V, 20V | 72mOhm @ 20A, 20V | 3.2V @ 1mA | 73 nC @ 20 V | +20V, -5V | 73000 pF @ 400 V | - | 208W (Tc) | |
 |
BSC200P03LSG | 0.4300 | |
13 | 0.00000000 | Infineon Technologies | OptiMOS® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TDSON-8-6 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | P-Channel | 30 V | 9.9A (Ta), 12.5A (Tc) | 10V | 20mOhm @ 12.5A, 10V | 1V @ 100µA | 48.5 nC @ 10 V | ±25V | 2430 pF @ 15 V | - | 2.5W (Ta), 63W (Tc) | |||
 |
RJK0351DPA-01#J0 | 0.9200 | |
2 | 0.00000000 | Renesas Electronics America Inc | * | Bulk | Active | - | Not applicable | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.29.0095 | 2,500 | |||||||||||||||||||
 |
2SK3278-E | 0.6400 | |
12 | 0.00000000 | onsemi | * | Bulk | Active | - | Not applicable | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.29.0095 | 1 | |||||||||||||||||||
|
IPI60R385CP | 1.0300 | |
78 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | PG-TO262-3-1 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 600 V | 9A (Tc) | 10V | 385mOhm @ 5.2A, 10V | 3.5V @ 340µA | 22 nC @ 10 V | ±20V | 790 pF @ 100 V | - | 83W (Tc) | |||
|
2SK680A-T2-AZ | 0.4600 | |
28 | 0.00000000 | Renesas Electronics America Inc | * | Bulk | Active | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | |||||||||||||||||||
 |
HAT1142R02-EL-E | 0.4100 | |
2 | 0.00000000 | Renesas Electronics America Inc | * | Bulk | Active | - | Not applicable | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.29.0095 | 2,500 | |||||||||||||||||||
|
PSMN1RS-40ES127 | - | |
7331 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | - | Not applicable | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.29.0075 | 1 | |||||||||||||||||||
|
NDS9435 | 0.9500 | |
37 | 0.00000000 | Fairchild Semiconductor | SI9xxx | Bulk | Active | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | 8-SOIC | download | Not applicable | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 5.3A | - | - | - | - | - | 2W | ||||||
|
SPI20N65C3 | - | |
6796 | 0.00000000 | Infineon Technologies | * | Bulk | Active | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | |||||||||||||||||||
|
2SJ245L-E | 2.0200 | |
242 | 0.00000000 | Renesas Electronics America Inc | * | Bulk | Active | - | Not applicable | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.29.0095 | 1 | |||||||||||||||||||
|
2SJ208-T1-AZ | - | |
3489 | 0.00000000 | Renesas Electronics America Inc | * | Bulk | Active | download | ROHS3 Compliant | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.29.0095 | 1,000 | |||||||||||||||||||
 |
CPH6614-TL-E | 0.1400 | |
84 | 0.00000000 | onsemi | * | Bulk | Active | - | Not applicable | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.21.0095 | 1 | |||||||||||||||||||
 |
SPB10N10LG | 0.4200 | |
993 | 0.00000000 | Infineon Technologies | SIPMOS® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | PG-TO263-3-2 | - | ROHS3 Compliant | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 100 V | 10.3A (Tc) | 10V | 154mOhm @ 8.1A, 10V | 2V @ 21µA | 22 nC @ 10 V | ±20V | 444 pF @ 25 V | - | 50W (Tc) | |||
|
RF1S540 | 1.1100 | |
4 | 0.00000000 | Harris Corporation | - | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | download | RoHS non-compliant | 1 (Unlimited) | REACH Affected | EAR99 | 0000.00.0000 | 1 | N-Channel | 100 V | 28A (Tc) | 10V | 77mOhm @ 17A, 10V | 4V @ 250µA | 59 nC @ 10 V | ±20V | 1450 pF @ 25 V | - | 150W (Tc) | |||
 |
PSMNR70-40SSHJ | 6.5100 | |
4 | 0.00000000 | Nexperia USA Inc. | - | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | SOT-1235 | PSMNR70 | MOSFET (Metal Oxide) | LFPAK88 (SOT1235) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 40 V | 425A (Ta) | 10V | 0.7mOhm @ 25A, 10V | 3.6V @ 1mA | 202 nC @ 10 V | ±20V | 15719 pF @ 25 V | Schottky Diode (Body) | 375W (Ta) | ||
 |
FCHD125N65S3R0-F155 | 7.0100 | |
2707 | 0.00000000 | onsemi | SuperFET® III | Tube | Last Time Buy | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | FCHD125 | MOSFET (Metal Oxide) | TO-247-3 | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 24A (Tc) | 10V | 125mOhm @ 12A, 10V | 4.5V @ 590µA | 46 nC @ 10 V | ±30V | 1940 pF @ 400 V | - | 181W (Tc) | ||
 |
NTHL027N65S3HF | 21.5700 | |
334 | 0.00000000 | onsemi | FRFET®, SuperFET® III | Tube | Not For New Designs | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | NTHL027 | MOSFET (Metal Oxide) | TO-247-3 | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 75A (Tc) | 10V | 27.4mOhm @ 35A, 10V | 5V @ 3mA | 225 nC @ 10 V | ±30V | 7630 pF @ 400 V | - | 595W (Tc) | ||
 |
NTHLD040N65S3HF | 17.3700 | |
28 | 0.00000000 | onsemi | FRFET®, SuperFET® III | Tube | Last Time Buy | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | NTHLD040 | MOSFET (Metal Oxide) | TO-247-3 | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 65A (Tc) | 10V | 40mOhm @ 32.5A, 10V | 5V @ 2.1mA | 159 nC @ 10 V | ±30V | 5945 pF @ 400 V | - | 446W (Tc) | ||
|
SIHFL110TR-GE3 | 0.6300 | |
2 | 0.00000000 | Vishay Siliconix | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SIHFL110 | MOSFET (Metal Oxide) | SOT-223 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 100 V | 1.5A (Tc) | 10V | 540mOhm @ 900mA, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 2W (Ta), 3.1W (Tc) | |||
 |
SIHB6N80E-GE3 | 1.3550 | |
1217 | 0.00000000 | Vishay Siliconix | E | Tube | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SIHB6 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 800 V | 5.4A (Tc) | 10V | 940mOhm @ 3A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±30V | 827 pF @ 100 V | - | 78W (Tc) | |||
|
SIHF530STRL-GE3 | 1.0700 | |
800 | 0.00000000 | Vishay Siliconix | - | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SIHF530 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 800 | N-Channel | 100 V | 14A (Tc) | 10V | 160mOhm @ 8.4A, 10V | 4V @ 250µA | 26 nC @ 10 V | ±20V | 670 pF @ 25 V | - | 3.7W (Ta), 88W (Tc) | |||
|
RJK1053DPB-WS#J5 | - | |
7203 | 0.00000000 | Renesas Electronics America Inc | * | Tray | Obsolete | - | 559-RJK1053DPB-WS#J5 | OBSOLETE | 1 | ||||||||||||||||||||||
|
RJK0456DPB-WS#J5 | - | |
8779 | 0.00000000 | Renesas Electronics America Inc | * | Tray | Obsolete | download | 559-RJK0456DPB-WS#J5 | OBSOLETE | 1 | ||||||||||||||||||||||
 |
NVMFS015N10MCLT1G | 1.3200 | |
8810 | 0.00000000 | onsemi | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | NVMFS015 | MOSFET (Metal Oxide) | 5-DFN (5x6) (8-SOFL) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 100 V | 10.5A (Ta), 54A (Tc) | 4.5V, 10V | 12.2mOhm @ 14A, 10V | 2.2V @ 282µA | 19 nC @ 10 V | ±20V | 1338 pF @ 50 V | - | 3W (Ta), 79W (Tc) | ||
 |
TK22A65X,S5X | 3.8400 | |
188 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK22A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 22A (Ta) | 10V | 150mOhm @ 11A, 10V | 3.5V @ 1.1mA | 50 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 45W (Tc) | |||
 |
TK380A65Y,S4X | 1.8300 | |
95 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK380A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 9.7A (Tc) | 10V | 380mOhm @ 4.9A, 10V | 4V @ 360µA | 20 nC @ 10 V | ±30V | 590 pF @ 300 V | - | 30W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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