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Single FETs, MOSFETs(44971)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
AOSS21311C | 0.4600 |  |
105 | 0.00000000 | Alpha & Omega Semiconductor Inc. | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 3-SMD, SOT-23-3 Variant | AOSS213 | MOSFET (Metal Oxide) | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 30 V | 4.3A (Ta) | 4.5V, 10V | 45mOhm @ 4.3A, 10V | 2.2V @ 250µA | 23 nC @ 10 V | ±20V | 720 pF @ 15 V | - | 1.3W (Ta) | ||
 |
RS1E350BNTB1 | 3.1300 | |
2 | 0.00000000 | Rohm Semiconductor | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerTDFN | RS1E | MOSFET (Metal Oxide) | 8-HSOP | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 35A (Ta), 80A (Tc) | 4.5V, 10V | 1.7mOhm @ 35A, 10V | 2.5V @ 1mA | 185 nC @ 10 V | ±20V | 7900 pF @ 15 V | - | 3W (Ta), 35W (Tc) | ||
 |
IRF7809AVTRPBF-1 | - | |
9279 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | 8-SOIC | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 30 V | 13.3A (Ta) | 4.5V | 9mOhm @ 15A, 4.5V | 1V @ 250µA | 62 nC @ 5 V | ±12V | 3780 pF @ 16 V | - | 2.5W (Ta) | ||||||
 |
CPH3355-TL-H | - | |
3833 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | CPH335 | MOSFET (Metal Oxide) | 3-CPH | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 30 V | 2.5A (Ta) | 4V, 10V | 156mOhm @ 1A, 10V | 2.6V @ 1mA | 3.9 nC @ 10 V | ±20V | 172 pF @ 10 V | - | 1W (Ta) | |||
 |
FDD6688 | - | |
6491 | 0.00000000 | onsemi | PowerTrench® | Tape & Reel (TR) | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | FDD668 | MOSFET (Metal Oxide) | TO-252AA | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 84A (Ta) | 4.5V, 10V | 5mOhm @ 18A, 10V | 3V @ 250µA | 56 nC @ 10 V | ±20V | 3845 pF @ 15 V | - | 83W (Ta) | ||
 |
IRFR9010TRPBF | 1.0600 | |
2 | 0.00000000 | Vishay Siliconix | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IRFR9010 | MOSFET (Metal Oxide) | D-Pak | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 50 V | 5.3A (Tc) | 10V | 500mOhm @ 2.8A, 10V | 4V @ 250µA | 9.1 nC @ 10 V | ±20V | 240 pF @ 25 V | - | 25W (Tc) | |||
 |
VN2410LZL1G | - | |
7394 | 0.00000000 | onsemi | - | Cut Tape (CT) | Obsolete | - | Through Hole | TO-226-3, TO-92-3 Long Body (Formed Leads) | VN2410 | MOSFET (Metal Oxide) | TO-92 (TO-226) | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 2,000 | N-Channel | 240 V | 200mA (Ta) | 2.5V, 10V | 10Ohm @ 500mA, 10V | 2V @ 1mA | ±20V | 125 pF @ 25 V | - | 350mW (Tc) | ||||
 |
BUK9610-100B,118 | - | |
4937 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | BUK96 | - | ROHS3 Compliant | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | |||||||||||||||||||
 |
FDS7066ASN3 | - | |
4838 | 0.00000000 | onsemi | PowerTrench® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | FDS70 | MOSFET (Metal Oxide) | 8-SO FLMP | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 19A (Ta) | 4.5V, 10V | 4.8mOhm @ 19A, 10V | 3V @ 1mA | 62 nC @ 10 V | ±20V | 2460 pF @ 15 V | - | 3W (Ta) | |||
 |
IPT012N06NATMA1 | 6.2800 | |
1 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerSFN | IPT012 | MOSFET (Metal Oxide) | PG-HSOF-8-1 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 60 V | 240A (Tc) | 6V, 10V | 1.2mOhm @ 100A, 10V | 3.3V @ 143µA | 124 nC @ 10 V | ±20V | 9750 pF @ 30 V | - | 214W (Tc) | ||
 |
BUZ73AE3046XK | - | |
9304 | 0.00000000 | Infineon Technologies | SIPMOS® | Tube | Discontinued at SIC | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | BUZ73 | MOSFET (Metal Oxide) | PG-TO220-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 500 | N-Channel | 200 V | 5.5A (Tc) | 10V | 600mOhm @ 4.5A, 10V | 4V @ 1mA | ±20V | 530 pF @ 25 V | - | 40W (Tc) | |||
 |
IPB156N22NFDATMA1 | 8.2400 | |
726 | 0.00000000 | Infineon Technologies | OptiMOS™FD | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IPB156 | MOSFET (Metal Oxide) | PG-TO263-3-2 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 220 V | 72A (Tc) | 10V | 15.6mOhm @ 50A, 10V | 4V @ 270µA | 87 nC @ 10 V | ±20V | 6930 pF @ 110 V | - | 300W (Tc) | ||
 |
STP5NK52ZD | 2.2300 | |
1 | 0.00000000 | STMicroelectronics | SuperMESH™ | Tube | Not For New Designs | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | STP5NK52 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 520 V | 4.4A (Tc) | 10V | 1.5Ohm @ 2.2A, 10V | 4.5V @ 50µA | 16.9 nC @ 10 V | ±30V | 529 pF @ 25 V | - | 25W (Tc) | ||
|
IRF630NSTRLPBF | 1.6400 | |
2675 | 0.00000000 | Infineon Technologies | HEXFET® | Tape & Reel (TR) | Not For New Designs | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IRF630 | MOSFET (Metal Oxide) | D2PAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | N-Channel | 200 V | 9.3A (Tc) | 10V | 300mOhm @ 5.4A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±20V | 575 pF @ 25 V | - | 82W (Tc) | ||
 |
BSC032NE2LSATMA1 | 0.9800 | |
24 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | BSC032 | MOSFET (Metal Oxide) | PG-TDSON-8-6 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 25 V | 22A (Ta), 84A (Tc) | 4.5V, 10V | 3.2mOhm @ 30A, 10V | 2V @ 250µA | 16 nC @ 10 V | ±20V | 1200 pF @ 12 V | - | 2.8W (Ta), 78W (Tc) | ||
 |
H5N2513PL-E | 16.0300 | |
1 | 0.00000000 | Renesas Electronics America Inc | * | Bulk | Active | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | |||||||||||||||||||
 |
SSM6K406TU,LF | 0.5200 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6K406 | MOSFET (Metal Oxide) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 4.4A (Ta) | 4.5V, 10V | 25mOhm @ 2A, 10V | 2.5V @ 1mA | 12.4 nC @ 10 V | ±20V | 490 pF @ 15 V | - | 500mW (Ta) | |||
 |
IRF530PBF | 1.4000 | |
8 | 0.00000000 | Vishay Siliconix | - | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | IRF530 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | *IRF530PBF | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 14A (Tc) | 10V | 160mOhm @ 8.4A, 10V | 4V @ 250µA | 26 nC @ 10 V | ±20V | 670 pF @ 25 V | - | 88W (Tc) | ||
 |
BSZ067N06LS3GATMA1 | 1.5500 | |
39 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | BSZ067 | MOSFET (Metal Oxide) | PG-TSDSON-8 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 14A (Ta), 20A (Tc) | 4.5V, 10V | 6.7mOhm @ 20A, 10V | 2.2V @ 35µA | 67 nC @ 10 V | ±20V | 5100 pF @ 30 V | - | 2.1W (Ta), 69W (Tc) | ||
 |
IPI65R310CFD | 0.8900 | |
10 | 0.00000000 | Infineon Technologies | CoolMOS CFD2™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | PG-TO262-3-1 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 650 V | 11.4A (Tc) | 10V | 310mOhm @ 4.4A, 10V | 4.5V @ 440µA | 41 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 104.2W (Tc) | |||
|
IRFR024TRR | - | |
7181 | 0.00000000 | Vishay Siliconix | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IRFR024 | MOSFET (Metal Oxide) | D-Pak | download | RoHS non-compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 60 V | 14A (Tc) | 10V | 100mOhm @ 8.4A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 640 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | |||
|
IRF540ZSTRR | - | |
8531 | 0.00000000 | Infineon Technologies | HEXFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | N-Channel | 100 V | 36A (Tc) | 10V | 26.5mOhm @ 22A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1770 pF @ 25 V | - | 92W (Tc) | |||
 |
TK40P03M1(T6RDS-Q) | - | |
6022 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK40P03 | MOSFET (Metal Oxide) | DPAK | download | RoHS Compliant | 1 (Unlimited) | TK40P03M1T6RDSQ | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 30 V | 40A (Ta) | 4.5V, 10V | 10.8mOhm @ 20A, 10V | 2.3V @ 100µA | 17.5 nC @ 10 V | ±20V | 1150 pF @ 10 V | - | - | ||
 |
IRFB33N15D | - | |
1966 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | *IRFB33N15D | EAR99 | 8541.29.0095 | 50 | N-Channel | 150 V | 33A (Tc) | 10V | 56mOhm @ 20A, 10V | 5.5V @ 250µA | 90 nC @ 10 V | ±30V | 2020 pF @ 25 V | - | 3.8W (Ta), 170W (Tc) | ||
 |
STF12NM50ND | - | |
9454 | 0.00000000 | STMicroelectronics | FDmesh™ II | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | STF12 | MOSFET (Metal Oxide) | TO-220FP | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±25V | 850 pF @ 50 V | - | 25W (Tc) | ||
 |
PSMN1R7-25YLC,115 | - | |
1319 | 0.00000000 | NXP USA Inc. | - | Tape & Reel (TR) | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | PSMN1 | MOSFET (Metal Oxide) | LFPAK56, Power-SO8 | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 25 V | 100A (Tc) | 4.5V, 10V | 1.9mOhm @ 25A, 10V | 1.95V @ 1mA | 59 nC @ 10 V | ±20V | 3735 pF @ 12 V | - | 164W (Tc) | ||
 |
IXTP5N60P | - | |
9853 | 0.00000000 | IXYS | PolarHV™ | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | IXTP5 | MOSFET (Metal Oxide) | TO-220-3 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 5A (Tc) | 10V | 1.7Ohm @ 2.5A, 10V | 5.5V @ 50µA | 14.2 nC @ 10 V | ±30V | 750 pF @ 25 V | - | 100W (Tc) | |||
|
STP11N52K3 | 2.7800 | |
581 | 0.00000000 | STMicroelectronics | SuperMESH3™ | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | STP11N | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 525 V | 10A (Tc) | 10V | 510mOhm @ 5A, 10V | 4.5V @ 50µA | 51 nC @ 10 V | ±30V | 1400 pF @ 50 V | - | 125W (Tc) | ||
 |
IRFS730B | 0.2900 | |
23 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | EAR99 | 8541.29.0095 | 1 | N-Channel | 400 V | 5.5A (Tj) | 10V | 1Ohm @ 2.75A, 10V | 4V @ 250µA | 33 nC @ 10 V | ±30V | 1000 pF @ 25 V | - | 38W (Tc) | |||
 |
SIHB120N60E-GE3 | 5.2400 | |
984 | 0.00000000 | Vishay Siliconix | E | Tube | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SIHB120 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 600 V | 25A (Tc) | 10V | 120mOhm @ 12A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 1562 pF @ 100 V | - | 179W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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