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Single FETs, MOSFETs(44971)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
MTW32N20E | - |  |
9350 | 0.00000000 | onsemi | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MTW32 | MOSFET (Metal Oxide) | TO-247 | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | MTW32N20EOS | EAR99 | 8541.29.0095 | 30 | N-Channel | 200 V | 32A (Tc) | 10V | 75mOhm @ 16A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 5000 pF @ 25 V | - | 180W (Tc) | |
 |
IPW65R145CFD7AXKSA1 | 6.4300 | |
4517 | 0.00000000 | Infineon Technologies | Automotive, AEC-Q101, CoolMOS™ | Tube | Active | -40°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IPW65R145 | MOSFET (Metal Oxide) | PG-TO247-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 17A (Tc) | 145mOhm @ 8.5A, 10V | 4.5V @ 420µA | 36 nC @ 10 V | ±20V | 1694 pF @ 400 V | - | 98W (Tc) | |||
 |
DMS3012SFG-13 | - | |
3584 | 0.00000000 | Diodes Incorporated | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | PowerDI3333-8 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 12A (Ta) | 4.5V, 10V | 10mOhm @ 13.5A, 10V | 2.5V @ 250µA | 14.7 nC @ 10 V | ±20V | 4310 pF @ 15 V | Schottky Diode (Body) | 890mW (Ta) | |||
 |
NTF3055L108T1G | 0.9000 | |
2204 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-261-4, TO-261AA | NTF3055 | MOSFET (Metal Oxide) | SOT-223 (TO-261) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 60 V | 3A (Ta) | 5V | 120mOhm @ 1.5A, 5V | 2V @ 250µA | 15 nC @ 5 V | ±15V | 440 pF @ 25 V | - | 1.3W (Ta) | ||
 |
RZR040P01TL | 0.7500 | |
1 | 0.00000000 | Rohm Semiconductor | - | Tape & Reel (TR) | Not For New Designs | 150°C (TJ) | Surface Mount | SC-96 | RZR040 | MOSFET (Metal Oxide) | TSMT3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 12 V | 4A (Ta) | 1.5V, 4.5V | 30mOhm @ 4A, 4.5V | 1V @ 1mA | 30 nC @ 4.5 V | ±10V | 2350 pF @ 6 V | - | 1W (Ta) | ||
 |
IPB100N08S207ATMA1 | 2.3255 | |
3979 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tape & Reel (TR) | Not For New Designs | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IPB100 | MOSFET (Metal Oxide) | PG-TO263-3-2 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 75 V | 100A (Tc) | 10V | 6.8mOhm @ 80A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 4700 pF @ 25 V | - | 300W (Tc) | ||
 |
DMP2022LSSQ-13 | 0.9400 | |
2 | 0.00000000 | Diodes Incorporated | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | -55°C ~ 155°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | DMP2022 | MOSFET (Metal Oxide) | 8-SO | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 20 V | 9.3A (Ta) | 2.5V, 10V | 13mOhm @ 10A, 10V | 1.1V @ 250µA | 60.2 nC @ 10 V | ±12V | 2575 pF @ 10 V | - | 1.6W (Ta) | ||
 |
APT20M18LVRG | 21.5900 | |
1786 | 0.00000000 | Microchip Technology | POWER MOS V® | Tube | Active | Through Hole | TO-264-3, TO-264AA | APT20M18 | MOSFET (Metal Oxide) | TO-264 [L] | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 200 V | 100A (Tc) | 18mOhm @ 50A, 10V | 4V @ 2.5mA | 330 nC @ 10 V | 9880 pF @ 25 V | - | ||||||
 |
IPU60R2K0C6BKMA1 | - | |
7215 | 0.00000000 | Infineon Technologies | CoolMOS™ | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPU60R | MOSFET (Metal Oxide) | PG-TO251-3 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 75 | N-Channel | 600 V | 2.4A (Tc) | 10V | 2Ohm @ 760mA, 10V | 3.5V @ 60µA | 6.7 nC @ 10 V | ±20V | 140 pF @ 100 V | - | 22.3W (Tc) | |||
|
2SK4177-E | - | |
5018 | 0.00000000 | onsemi | - | Bulk | Obsolete | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 2SK4177 | MOSFET (Metal Oxide) | SMP-FD | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 100 | N-Channel | 1500 V | 2A (Ta) | 10V | 13Ohm @ 1A, 10V | 3.5V @ 1mA | 37.5 nC @ 10 V | ±20V | 380 pF @ 30 V | - | 80W (Tc) | |||
 |
C3M0065090D | 15.9100 | |
2 | 0.00000000 | Wolfspeed, Inc. | C3M™ | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | C3M0065090 | SiCFET (Silicon Carbide) | TO-247-3 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 900 V | 36A (Tc) | 15V | 78mOhm @ 20A, 15V | 2.1V @ 5mA | 30.4 nC @ 15 V | +18V, -8V | 660 pF @ 600 V | - | 125W (Tc) | |||
 |
IPI60R299CPXKSA1 | - | |
8573 | 0.00000000 | Infineon Technologies | CoolMOS™ | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | IPI60R | MOSFET (Metal Oxide) | PG-TO262-3 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 500 | N-Channel | 600 V | 11A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 29 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 96W (Tc) | |||
 |
IRFU7746PBF | - | |
9065 | 0.00000000 | Infineon Technologies | HEXFET®, StrongIRFET™ | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IRFU7746 | MOSFET (Metal Oxide) | IPAK (TO-251AA) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | SP001552464 | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 75 V | 56A (Tc) | 6V, 10V | 11.2mOhm @ 35A, 10V | 3.7V @ 100µA | 89 nC @ 10 V | ±20V | 3107 pF @ 25 V | - | 99W (Tc) | |
 |
MFT2N3A0S23 | - | |
2585 | 0.00000000 | Meritek | - | Tape & Reel (TR) | Active | -55°C ~ 150°C | Surface Mount | MOSFET (Metal Oxide) | download | RoHS Compliant | 1 (Unlimited) | 2997-MFT2N3A0S23TR | EAR99 | 8532.25.0020 | 10 | N-Channel | ±12V | 280 pF @ 10 V | 500mW | ||||||||||||
 |
SI4378DY-T1-E3 | - | |
8021 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | SI4378 | MOSFET (Metal Oxide) | 8-SOIC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 20 V | 19A (Ta) | 2.5V, 4.5V | 2.7mOhm @ 25A, 4.5V | 1.8V @ 250µA | 55 nC @ 4.5 V | ±12V | 8500 pF @ 10 V | - | 1.6W (Ta) | |||
 |
DMTH61M5SPSW-13 | 0.8999 | |
8138 | 0.00000000 | Diodes Incorporated | - | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PowerDI5060-8 (SWP) | download | REACH Unaffected | 31-DMTH61M5SPSW-13TR | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 60 V | 225A (Tc) | 10V | 1.5mOhm @ 30A, 10V | 4V @ 250µA | 130.6 nC @ 10 V | ±20V | 8306 pF @ 30 V | - | 3.2W (Ta), 167W (Tc) | ||||
 |
SIHG73N60AEL-GE3 | 12.0500 | |
40 | 0.00000000 | Vishay Siliconix | EL | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | SIHG73 | MOSFET (Metal Oxide) | TO-247AC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 600 V | 69A (Tc) | 10V | 42mOhm @ 36.5A, 10V | 4V @ 250µA | 342 nC @ 10 V | ±30V | 6709 pF @ 100 V | - | 520W (Tc) | |||
 |
SPA11N80C3XKSA1 | 3.3200 | |
7 | 0.00000000 | Infineon Technologies | CoolMOS™ | Tube | Not For New Designs | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | SPA11N80 | MOSFET (Metal Oxide) | PG-TO220-3-31 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 800 V | 11A (Tc) | 10V | 450mOhm @ 7.1A, 10V | 3.9V @ 680µA | 85 nC @ 10 V | ±20V | 1600 pF @ 100 V | - | 34W (Tc) | ||
 |
TK31N60W,S1VF | 9.2900 | |
1508 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-247-3 | TK31N60 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | |||
 |
BSZ086P03NS3GATMA1 | 0.9400 | |
15 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | BSZ086 | MOSFET (Metal Oxide) | PG-TSDSON-8 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 5,000 | P-Channel | 30 V | 13.5A (Ta), 40A (Tc) | 6V, 10V | 8.6mOhm @ 20A, 10V | 3.1V @ 105µA | 57.5 nC @ 10 V | ±25V | 4785 pF @ 15 V | - | 2.1W (Ta), 69W (Tc) | ||
|
SI4842BDY-T1-GE3 | 2.4500 | |
1 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | SI4842 | MOSFET (Metal Oxide) | 8-SOIC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 28A (Tc) | 4.5V, 10V | 4.2mOhm @ 20A, 10V | 3V @ 250µA | 100 nC @ 10 V | ±20V | 3650 pF @ 15 V | - | 3W (Ta), 6.25W (Tc) | |||
 |
DMP21D6UFB4-7B | 0.0892 | |
3679 | 0.00000000 | Diodes Incorporated | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | DMP21 | MOSFET (Metal Oxide) | X2-DFN1006-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 10,000 | P-Channel | 20 V | 580mA (Ta) | 1.8V, 4.5V | 1Ohm @ 100mA, 4.5V | 1V @ 250µA | 0.8 nC @ 8 V | ±8V | 46.1 pF @ 10 V | - | 510mW (Ta) | ||
 |
2SK2425-E | 2.2600 | |
1 | 0.00000000 | Renesas Electronics America Inc | * | Bulk | Active | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | |||||||||||||||||||
|
IPI80N06S3L-08 | - | |
7403 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | IPI80N | MOSFET (Metal Oxide) | PG-TO262-3 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 500 | N-Channel | 55 V | 80A (Tc) | 5V, 10V | 7.9mOhm @ 43A, 10V | 2.2V @ 55µA | 134 nC @ 10 V | ±16V | 6475 pF @ 25 V | - | 105W (Tc) | |||
 |
AUIRFZ44NS | 1.1100 | |
9 | 0.00000000 | International Rectifier | Automotive, AEC-Q101, HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | Not applicable | 1 (Unlimited) | REACH Unaffected | EAR99 | 0000.00.0000 | 1 | N-Channel | 55 V | 49A (Tc) | 17.5mOhm @ 25A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1470 pF @ 25 V | - | 3.8W (Ta), 94W (Tc) | ||||
 |
BSP89,115 | 0.5800 | |
2 | 0.00000000 | Nexperia USA Inc. | - | Tape & Reel (TR) | Not For New Designs | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | BSP89 | MOSFET (Metal Oxide) | SOT-223 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 240 V | 375mA (Ta) | 4.5V, 10V | 5Ohm @ 340mA, 10V | 2V @ 1mA | ±20V | 120 pF @ 25 V | - | 1.5W (Ta) | |||
 |
STP19NM65N | - | |
9968 | 0.00000000 | STMicroelectronics | MDmesh™ II | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 | STP19N | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 15.5A (Tc) | 10V | 270mOhm @ 7.75A, 10V | 4V @ 250µA | 55 nC @ 10 V | ±25V | 1900 pF @ 50 V | - | 150W (Tc) | ||
|
IGO60R042D1AUMA2 | 16.1506 | |
2406 | 0.00000000 | Infineon Technologies | CoolGaN™ | Tape & Reel (TR) | Active | - | Surface Mount | 20-PowerSOIC (0.433", 11.00mm Width) | GaNFET (Gallium Nitride) | PG-DSO-20-85 | - | ROHS3 Compliant | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | - | 600 V | - | - | - | - | - | - | - | ||||||
 |
BS170G | - | |
9741 | 0.00000000 | onsemi | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | BS170 | MOSFET (Metal Oxide) | TO-92 (TO-226) | - | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 1,000 | N-Channel | 60 V | 500mA (Ta) | 10V | 5Ohm @ 200mA, 10V | 3V @ 1mA | ±20V | 60 pF @ 10 V | - | 350mW (Ta) | ||||
|
NE5550779A-T1A-A | 3.9100 | |
20 | 0.00000000 | Renesas Electronics America Inc | * | Bulk | Active | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 5,000 |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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