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Single FETs, MOSFETs(44971)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RFP18N08 | 1.1000 |  |
4 | 0.00000000 | Harris Corporation | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | RoHS non-compliant | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.29.0095 | 1 | N-Channel | 80 V | 18A (Tc) | 10V | 100mOhm @ 9A, 10V | 4V @ 1mA | ±20V | 1700 pF @ 25 V | - | 75W (Tc) | ||||
 |
SI4401DY-T1-E3 | - | |
1280 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | SI4401 | MOSFET (Metal Oxide) | 8-SOIC | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 40 V | 8.7A (Ta) | 4.5V, 10V | 15.5mOhm @ 10.5A, 10V | 1V @ 250µA (Min) | 50 nC @ 5 V | ±20V | - | 1.5W (Ta) | |||
 |
SFU9230BTU | 0.3400 | |
5 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | I-PAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | EAR99 | 8541.29.0095 | 1 | P-Channel | 200 V | 5.4A (Tc) | 10V | 800mOhm @ 2.7A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±30V | 1000 pF @ 25 V | - | 2.5W (Ta), 49W (Tc) | |||
 |
IPA60R600C6XKSA1 | 1.1203 | |
6754 | 0.00000000 | Infineon Technologies | CoolMOS™ | Tube | Not For New Designs | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | IPA60R600 | MOSFET (Metal Oxide) | PG-TO220-FP | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 500 | N-Channel | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 28W (Tc) | ||
 |
CZDM1003N BK | - | |
5706 | 0.00000000 | Central Semiconductor Corp | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | SOT-223 | download | 1 (Unlimited) | CZDM1003NBK | EAR99 | 8541.29.0095 | 1 | N-Channel | 100 V | 3A (Ta) | 10V | 150mOhm @ 2A, 10V | 4V @ 250µA | 15 nC @ 10 V | 20V | 975 pF @ 25 V | - | 2W (Ta) | ||||
 |
RTQ020N03TR | 0.5800 | |
8 | 0.00000000 | Rohm Semiconductor | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | RTQ020 | MOSFET (Metal Oxide) | TSMT6 (SC-95) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 2A (Ta) | 2.5V, 4.5V | 125mOhm @ 2A, 4.5V | 1.5V @ 1mA | 3.3 nC @ 4.5 V | ±12V | 135 pF @ 10 V | - | 1.25W (Ta) | ||
 |
TK49N65W5,S1F | 11.8200 | |
45 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-247-3 | TK49N65 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 49.2A (Ta) | 10V | 57mOhm @ 24.6A, 10V | 4.5V @ 2.5mA | 185 nC @ 10 V | ±30V | 6500 pF @ 300 V | - | 400W (Tc) | |||
 |
EPC2204 | 2.5300 | |
24 | 0.00000000 | EPC | eGaN® | Tape & Reel (TR) | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0040 | 2,500 | N-Channel | 100 V | 29A (Ta) | 5V | 6mOhm @ 16A, 5V | 2.5V @ 4mA | 7.4 nC @ 5 V | +6V, -4V | 851 pF @ 50 V | - | - | |||
 |
SQ3481EV-T1_GE3 | 0.6900 | |
1 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SQ3481 | MOSFET (Metal Oxide) | 6-TSOP | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 30 V | 7.5A (Tc) | 4.5V, 10V | 43mOhm @ 5.3A, 10V | 2.5V @ 250µA | 23.5 nC @ 10 V | ±20V | 870 pF @ 15 V | - | 4W (Tc) | ||||
 |
DIW120SIC023-AQ | 78.9400 | |
1384 | 0.00000000 | Diotec Semiconductor | Automotive, AEC-Q101 | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247 | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 4878-DIW120SIC023-AQ | 30 | N-Channel | 1200 V | 125A (Tc) | 18V | 23mOhm @ 75A, 18V | 2.9V @ 250µA | 45 nC @ 18 V | 6150 pF @ 1000 V | - | 600W (Tc) | |||||
 |
DI080N06PQ-AQ | 1.8349 | |
5 | 0.00000000 | Diotec Semiconductor | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | DI080N06 | MOSFET (Metal Oxide) | 8-QFN (5x6) | download | RoHS non-compliant | 1 (Unlimited) | Vendor Undefined | 2796-DI080N06PQ-AQTR | 8541.21.0000 | 5,000 | N-Channel | 65 V | 80A (Tc) | 4.5V, 10V | 4mOhm @ 30A, 10V | 3V @ 250µA | 56 nC @ 10 V | ±20V | 4128 pF @ 30 V | - | 80W (Tc) | ||
|
UPA1722G-E2-A | - | |
6348 | 0.00000000 | Renesas | - | Bulk | Obsolete | 150°C | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | MOSFET (Metal Oxide) | 8-SOP | - | 2156-UPA1722G-E2-A | 1 | N-Channel | 30 V | 9A (Ta) | 4V, 10V | 21mOhm @ 4.5A, 10V | 2.5V @ 1mA | 20 nC @ 10 V | ±20V | 980 pF @ 10 V | - | 2W (Ta) | |||||||
 |
AUIRF2804L-313 | - | |
6852 | 0.00000000 | Infineon Technologies | Automotive, AEC-Q101, HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | TO-262 | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 40 V | 195A (Tc) | 10V | 2.3mOhm @ 75A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 6450 pF @ 25 V | - | 300W (Tc) | |||
 |
IRFS17N20D | - | |
8329 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 200 V | 16A (Tc) | 10V | 170mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 3.8W (Ta), 140W (Tc) | |||
 |
SI7141DP-T1-GE3 | 2.3200 | |
41 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | SI7141 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 60A (Tc) | 4.5V, 10V | 1.9mOhm @ 25A, 10V | 2.3V @ 250µA | 400 nC @ 10 V | ±20V | 14300 pF @ 10 V | - | 6.25W (Ta), 104W (Tc) | |||
 |
IRF7807VD2TR | - | |
5994 | 0.00000000 | Infineon Technologies | FETKY™ | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | 8-SO | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 4,000 | N-Channel | 30 V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 14 nC @ 4.5 V | ±20V | Schottky Diode (Isolated) | 2.5W (Ta) | ||||
|
AUIRF1404STRL | - | |
2703 | 0.00000000 | Infineon Technologies | HEXFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | AUIRF1404 | MOSFET (Metal Oxide) | D2PAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | SP001517298 | EAR99 | 8541.29.0095 | 800 | N-Channel | 40 V | 75A (Tc) | 10V | 4mOhm @ 95A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 7360 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | |
|
IPB180N04S4L01ATMA1 | 1.9606 | |
9871 | 0.00000000 | Infineon Technologies | Automotive, AEC-Q101, OptiMOS™ | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | IPB180 | MOSFET (Metal Oxide) | PG-TO263-7-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 40 V | 180A (Tc) | 4.5V, 10V | 1.2mOhm @ 100A, 10V | 2.2V @ 140µA | 245 nC @ 10 V | +20V, -16V | 19100 pF @ 25 V | - | 188W (Tc) | ||
 |
IRFBC40ASTRRPBF | 2.7871 | |
1953 | 0.00000000 | Vishay Siliconix | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IRFBC40 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 800 | N-Channel | 600 V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±30V | 1036 pF @ 25 V | - | 125W (Tc) | |||
|
SI3458BDV-T1-GE3 | 0.9100 | |
8 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SI3458 | MOSFET (Metal Oxide) | 6-TSOP | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 60 V | 4.1A (Tc) | 4.5V, 10V | 100mOhm @ 3.2A, 10V | 3V @ 250µA | 11 nC @ 10 V | ±20V | 350 pF @ 30 V | - | 2W (Ta), 3.3W (Tc) | |||
 |
GPIHV10DK | 7.5000 | |
340 | 0.00000000 | GaNPower | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | GaNFET (Gallium Nitride) | download | RoHS Compliant | 3 (168 Hours) | REACH Unaffected | 4025-GPIHV10DKTR | 3A001 | 8541.49.7000 | 1 | N-Channel | 1200 V | 10A | 6V | 1.7V @ 3.5mA | 3.5 nC @ 6 V | +7.5V, -12V | 105 pF @ 700 V | |||||||
 |
FQD4N20TF | - | |
1120 | 0.00000000 | onsemi | QFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | FQD4 | MOSFET (Metal Oxide) | TO-252AA | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 200 V | 3A (Tc) | 10V | 1.4Ohm @ 1.5A, 10V | 5V @ 250µA | 6.5 nC @ 10 V | ±30V | 220 pF @ 25 V | - | 2.5W (Ta), 30W (Tc) | |||
 |
SPA03N60C3XKSA1 | - | |
9911 | 0.00000000 | Infineon Technologies | CoolMOS™ | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | SPA03N | MOSFET (Metal Oxide) | PG-TO220-3-31 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 500 | N-Channel | 650 V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 3.9V @ 135µA | 17 nC @ 10 V | ±20V | 400 pF @ 25 V | - | 29.7W (Tc) | |||
 |
IPW65R190E6FKSA1 | - | |
5902 | 0.00000000 | Infineon Technologies | CoolMOS™ | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IPW65R | MOSFET (Metal Oxide) | PG-TO247-3-1 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 240 | N-Channel | 650 V | 20.2A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73 nC @ 10 V | ±20V | 1620 pF @ 100 V | - | 151W (Tc) | |||
 |
RQ5C030TPTL | 0.6000 | |
17 | 0.00000000 | Rohm Semiconductor | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SC-96 | RQ5C030 | MOSFET (Metal Oxide) | TSMT3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 3A (Ta) | 2.5V, 4.5V | 75mOhm @ 3A, 4.5V | 2V @ 1mA | 9.3 nC @ 4.5 V | ±12V | 840 pF @ 10 V | - | 700mW (Ta) | ||
|
IPB50N10S3L16ATMA1 | 2.4200 | |
4701 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IPB50N10 | MOSFET (Metal Oxide) | PG-TO263-3-2 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 100 V | 50A (Tc) | 4.5V, 10V | 15.4mOhm @ 50A, 10V | 2.4V @ 60µA | 64 nC @ 10 V | ±20V | 4180 pF @ 25 V | - | 100W (Tc) | ||
|
DMTH10H025LPS-13 | 0.3335 | |
2692 | 0.00000000 | Diodes Incorporated | - | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | DMTH10 | MOSFET (Metal Oxide) | PowerDI5060-8 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | DMTH10H025LPS-13DI | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 100 V | 9.3A (Ta), 45A (Tc) | 6V, 10V | 23mOhm @ 20A, 10V | 3V @ 250µA | 21 nC @ 10 V | ±20V | 1477 pF @ 50 V | - | 3.2W (Ta), 79W (Tc) | |
 |
IXFR40N50Q2 | - | |
6387 | 0.00000000 | IXYS | HiPerFET™ | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IXFR40 | MOSFET (Metal Oxide) | ISOPLUS247™ | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 500 V | 29A (Tc) | 10V | 170mOhm @ 20A, 10V | 5V @ 4mA | 110 nC @ 10 V | ±30V | 4200 pF @ 25 V | - | 320W (Tc) | |||
 |
NTE490 | 0.9300 | |
673 | 0.00000000 | NTE Electronics, Inc | - | Bag | Active | -55°C ~ 150°C (TJ) | Through Hole | Axial | MOSFET (Metal Oxide) | Axial | download | ROHS3 Compliant | 2368-NTE490 | EAR99 | 8541.21.0095 | 1 | N-Channel | 60 V | 500mA (Tj) | 10V | 5Ohm @ 200mA, 10V | 3V @ 1mA | ±20V | 60 pF @ 10 V | - | 350mW (Ta) | |||||
 |
IRFL024NTRPBF | - | |
8798 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | SOT-223 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 55 V | 2.8A (Ta) | 10V | 75mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3 nC @ 10 V | ±20V | 400 pF @ 25 V | - | 1W (Ta) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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