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Single FETs, MOSFETs(44971)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STW13NK60Z | 3.0949 |  |
8017 | 0.00000000 | STMicroelectronics | SuperMESH™ | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | STW13 | MOSFET (Metal Oxide) | TO-247-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 600 V | 13A (Tc) | 10V | 550mOhm @ 4.5A, 10V | 4.5V @ 100µA | 92 nC @ 10 V | ±30V | 2030 pF @ 25 V | - | 150W (Tc) | ||
 |
STQ1HNK60R-AP | 0.6700 | |
3 | 0.00000000 | STMicroelectronics | SuperMESH™ | Cut Tape (CT) | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | STQ1HNK60 | MOSFET (Metal Oxide) | TO-92-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 600 V | 400mA (Tc) | 10V | 8.5Ohm @ 500mA, 10V | 3.7V @ 250µA | 10 nC @ 10 V | ±30V | 156 pF @ 25 V | - | 3W (Tc) | ||
 |
GPIHV14DF | - | |
5412 | 0.00000000 | GaNPower | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | GaNFET (Gallium Nitride) | download | RoHS Compliant | 3 (168 Hours) | REACH Unaffected | 4025-GPIHV14DFTR | 3A001 | 8541.49.7000 | 1 | N-Channel | 1200 V | 14A | 6V | 1.7V @ 3.5mA | 4 nC @ 6 V | +7.5V, -12V | 60 pF @ 700 V | |||||||
 |
IV1Q12160T4 | 18.7400 | |
106 | 0.00000000 | Inventchip | - | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4 | download | ROHS3 Compliant | 1 (Unlimited) | 4084-IV1Q12160T4 | EAR99 | 30 | N-Channel | 1200 V | 20A (Tc) | 20V | 195mOhm @ 10A, 20V | 2.9V @ 1.9mA | 43 nC @ 20 V | +20V, -5V | 885 pF @ 800 V | - | 138W (Tc) | ||||
 |
SI7404DN-T1-GE3 | - | |
6093 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | SI7404 | MOSFET (Metal Oxide) | PowerPAK® 1212-8 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 8.5A (Ta) | 2.5V, 10V | 13mOhm @ 13.3A, 10V | 1.5V @ 250µA | 30 nC @ 4.5 V | ±12V | - | 1.5W (Ta) | |||
 |
NTMFS4C905NAT3G | 0.5769 | |
4006 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Active | NTMFS4 | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 488-NTMFS4C905NAT3GTR | EAR99 | 8541.29.0095 | 5,000 | |||||||||||||||||
 |
IRFU214BTU_FP001 | - | |
6325 | 0.00000000 | onsemi | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IRFU2 | MOSFET (Metal Oxide) | I-PAK | - | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 70 | N-Channel | 250 V | 2.2A (Tc) | 10V | 2Ohm @ 1.1A, 10V | 4V @ 250µA | 10.5 nC @ 10 V | ±30V | 275 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | |||
 |
BSC014N06NSATMA1 | 3.5900 | |
8929 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | BSC014 | MOSFET (Metal Oxide) | PG-TDSON-8-17 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 30A (Ta), 100A (Tc) | 6V, 10V | 1.45mOhm @ 50A, 10V | 2.8V @ 120µA | 89 nC @ 10 V | ±20V | 6500 pF @ 30 V | - | 2.5W (Ta), 156W (Tc) | ||
 |
SI8821EDB-T2-E1 | 0.4800 | |
5 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 4-XFBGA, CSPBGA | SI8821 | MOSFET (Metal Oxide) | 4-Microfoot | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 30 V | 1.6A (Ta) | 2.5V, 4.5V | 135mOhm @ 1A, 4.5V | 1.3V @ 250µA | 17 nC @ 10 V | ±12V | 440 pF @ 15 V | - | 500mW (Ta) | ||
 |
MCT06P02-TP | - | |
9251 | 0.00000000 | Micro Commercial Co | - | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MCT06 | MOSFET (Metal Oxide) | SOT-223 | - | 353-MCT06P02-TP | EAR99 | 8541.29.0095 | 1 | P-Channel | 20 V | 6A | 2.5V, 4.5V | 60mOhm @ 6A, 4.5V | 900mV @ 250µA | 15 nC @ 4.5 V | ±12V | 740 pF @ 4 V | - | 3W | ||||
 |
IRLL1503TR | - | |
3031 | 0.00000000 | Vishay Siliconix | - | Tape & Reel (TR) | Active | - | Surface Mount | TO-261-4, TO-261AA | IRLL1503 | MOSFET (Metal Oxide) | SOT-223 | - | RoHS non-compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | - | - | - | - | - | |||||||
 |
IRFH3707TR2PBF | - | |
1400 | 0.00000000 | Infineon Technologies | HEXFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | 8-PQFN (3x3) | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 400 | N-Channel | 30 V | 12A (Ta), 29A (Tc) | 4.5V, 10V | 12.4mOhm @ 12A, 10V | 2.35V @ 25µA | 8.1 nC @ 4.5 V | ±20V | 755 pF @ 15 V | - | 2.8W (Ta) | ||||
 |
NDD60N550U1T4G | - | |
4948 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | NDD60 | MOSFET (Metal Oxide) | DPAK | download | 3 (168 Hours) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 600 V | 8.2A (Tc) | 10V | 550mOhm @ 4A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±25V | 540 pF @ 50 V | - | 94W (Tc) | |||
 |
IXTA6N100D2 | 8.1900 | |
4446 | 0.00000000 | IXYS | Depletion | Tube | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IXTA6 | MOSFET (Metal Oxide) | TO-263AA | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 1000 V | 6A (Tc) | - | 2.2Ohm @ 3A, 0V | - | 95 nC @ 5 V | ±20V | 2650 pF @ 25 V | Depletion Mode | 300W (Tc) | ||
 |
IXFR44N80P | 22.8100 | |
8622 | 0.00000000 | IXYS | HiPerFET™, Polar | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IXFR44 | MOSFET (Metal Oxide) | ISOPLUS247™ | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 800 V | 25A (Tc) | 10V | 200mOhm @ 22A, 10V | 5V @ 8mA | 200 nC @ 10 V | ±30V | 12000 pF @ 25 V | - | 300W (Tc) | ||
 |
IRF6622TRPBF | - | |
2917 | 0.00000000 | Infineon Technologies | HEXFET® | Tape & Reel (TR) | Obsolete | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric SQ | MOSFET (Metal Oxide) | DIRECTFET™ SQ | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 4,800 | N-Channel | 25 V | 15A (Ta), 59A (Tc) | 4.5V, 10V | 6.3mOhm @ 15A, 10V | 2.35V @ 25µA | 17 nC @ 4.5 V | ±20V | 1450 pF @ 13 V | - | 2.2W (Ta), 34W (Tc) | ||||
 |
BUK78150-55A/CUF | 0.4500 | |
4 | 0.00000000 | Nexperia USA Inc. | Automotive, AEC-Q100, TrenchMOS™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | BUK78150 | MOSFET (Metal Oxide) | SOT-223 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 4,000 | N-Channel | 55 V | 5.5A (Tc) | 10V | 150mOhm @ 5A, 10V | 4V @ 1mA | ±20V | 230 pF @ 25 V | - | 8W (Tc) | |||
 |
IPAW60R280P7SE8228XKSA1 | 0.9364 | |
6630 | 0.00000000 | Infineon Technologies | CoolMOS™ P7 | Tube | Active | -40°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | IPAW60 | MOSFET (Metal Oxide) | PG-TO220-FP | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 450 | N-Channel | 600 V | 12A (Tc) | 10V | 280mOhm @ 3.8A, 10V | 4V @ 190µA | 18 nC @ 10 V | ±20V | 761 pF @ 400 V | - | 24W (Tc) | ||
 |
SCT3030KLHRC11 | 77.0900 | |
714 | 0.00000000 | Rohm Semiconductor | Automotive, AEC-Q101 | Tube | Active | 175°C (TJ) | Through Hole | TO-247-3 | SCT3030 | SiCFET (Silicon Carbide) | TO-247N | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 72A (Tc) | 18V | 39mOhm @ 27A, 18V | 5.6V @ 13.3mA | 131 nC @ 18 V | +22V, -4V | 2222 pF @ 800 V | - | 339W | ||
 |
IRLMS5703TR | - | |
4335 | 0.00000000 | Infineon Technologies | - | Cut Tape (CT) | Obsolete | Surface Mount | SOT-23-6 | MOSFET (Metal Oxide) | Micro6™(SOT23-6) | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 30 V | 2.3A (Ta) | 200mOhm @ 1.6A, 10V | 1V @ 250µA | 11 nC @ 10 V | 170 pF @ 25 V | - | |||||||
 |
HUFA75645S3S | 2.5500 | |
1 | 0.00000000 | Fairchild Semiconductor | UltraFET™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK (TO-263) | download | EAR99 | 8542.39.0001 | 128 | N-Channel | 100 V | 75A (Tc) | 10V | 14mOhm @ 75A, 10V | 4V @ 250µA | 238 nC @ 20 V | ±20V | 3790 pF @ 25 V | - | 310W (Tc) | ||||||
 |
SQD10N30-330H_GE3 | 1.6500 | |
7747 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SQD10 | MOSFET (Metal Oxide) | TO-252AA | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 300 V | 10A (Tc) | 10V | 330mOhm @ 14A, 10V | 4.4V @ 250µA | 47 nC @ 10 V | ±30V | 2190 pF @ 25 V | - | 107W (Tc) | |||
 |
IPD60R360P7SAUMA1 | 1.1600 | |
1 | 0.00000000 | Infineon Technologies | CoolMOS™ P7 | Tape & Reel (TR) | Active | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IPD60R | MOSFET (Metal Oxide) | PG-TO252-3 | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 600 V | 9A (Tc) | 10V | 360mOhm @ 2.7A, 10V | 4V @ 140µA | 13 nC @ 10 V | ±20V | 555 pF @ 400 V | - | 41W (Tc) | ||
|
IPD30N06S2L23ATMA1 | - | |
7362 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tape & Reel (TR) | Discontinued at SIC | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IPD30N | MOSFET (Metal Oxide) | PG-TO252-3-11 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 55 V | 30A (Tc) | 4.5V, 10V | 23mOhm @ 22A, 10V | 2V @ 50µA | 42 nC @ 10 V | ±20V | 1091 pF @ 25 V | - | 100W (Tc) | ||
 |
SI2306A | 0.4300 | |
2 | 0.00000000 | UMW | UMW | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | SOT-23 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 3,000 | N-Channel | 30 V | 4A (Ta) | 4.5V, 10V | 35mOhm @ 4A, 10V | 3V @ 250µA | 7 nC @ 5 V | ±20V | 555 pF @ 15 V | - | 1.25W (Ta) | |||||
 |
TPN6R303NC,LQ | 0.8300 | |
1735 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPN6R303 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 20A (Ta) | 4.5V, 10V | 6.3mOhm @ 10A, 10V | 2.3V @ 200µA | 24 nC @ 10 V | ±20V | 1370 pF @ 15 V | - | 700mW (Ta), 19W (Tc) | |||
|
FDA16N50LDTU | 2.7600 | |
347 | 0.00000000 | onsemi | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 (Formed Leads) | FDA16N50 | MOSFET (Metal Oxide) | TO-3PN (L-Forming) | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | 2166-FDA16N50LDTU-488 | EAR99 | 8541.29.0095 | 30 | N-Channel | 500 V | 16.5A (Tc) | 10V | 380mOhm @ 8.3A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 1945 pF @ 25 V | - | 205W (Tc) | |
 |
SIUD401ED-T1-GE3 | 0.4300 | |
8874 | 0.00000000 | Vishay Siliconix | TrenchFET® Gen III | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 0806 | SIUD401 | MOSFET (Metal Oxide) | PowerPAK® 0806 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 30 V | 500mA (Ta) | 2.5V, 10V | 1.573Ohm @ 200mA, 10V | 1.4V @ 250µA | 2 nC @ 10 V | ±12V | 33 pF @ 15 V | - | 1.25W (Ta) | |||
 |
TSM2314CX RFG | 0.5307 | |
39 | 0.00000000 | Taiwan Semiconductor Corporation | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM2314 | MOSFET (Metal Oxide) | SOT-23 | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 20 V | 4.9A (Tc) | 1.8V, 4.5V | 33mOhm @ 4.9A, 4.5V | 1.2V @ 250µA | 11 nC @ 4.5 V | ±12V | 900 pF @ 10 V | - | 1.25W (Ta) | ||
 |
IRFB3006GPBF | - | |
5939 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 60 V | 195A (Tc) | 10V | 2.5mOhm @ 170A, 10V | 4V @ 250µA | 300 nC @ 10 V | ±20V | 8970 pF @ 50 V | - | 375W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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