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Single FETs, MOSFETs(44971)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPB120N10S405ATMA1 | 3.9600 |  |
6 | 0.00000000 | Infineon Technologies | Automotive, AEC-Q101, OptiMOS™ | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IPB120 | MOSFET (Metal Oxide) | PG-TO263-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 100 V | 120A (Tc) | 10V | 5mOhm @ 100A, 10V | 3.5V @ 120µA | 91 nC @ 10 V | ±20V | 6540 pF @ 25 V | - | 190W (Tc) | ||
 |
IXTT88N30P | 13.6900 | |
9986 | 0.00000000 | IXYS | Polar | Tube | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | IXTT88 | MOSFET (Metal Oxide) | TO-268AA | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | -IXTT88N30P | EAR99 | 8541.29.0095 | 30 | N-Channel | 300 V | 88A (Tc) | 10V | 40mOhm @ 44A, 10V | 5V @ 250µA | 180 nC @ 10 V | ±20V | 6300 pF @ 25 V | - | 600W (Tc) | |
 |
UPA2742GR-E1-AT | 1.0200 | |
7 | 0.00000000 | Renesas Electronics America Inc | * | Bulk | Active | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | |||||||||||||||||||
 |
SPI08N50C3 | 1.0000 | |
3792 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | PG-TO262-3-1 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 560 V | 7.6A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 32 nC @ 10 V | ±20V | 750 pF @ 25 V | - | 83W (Tc) | |||
 |
RJK03M7DPA-00#J5A | 0.4300 | |
9 | 0.00000000 | Renesas Electronics America Inc | - | Bulk | Obsolete | 150°C (TJ) | Surface Mount | 8-WFDFN Exposed Pad | MOSFET (Metal Oxide) | 8-WPAK | download | ROHS3 Compliant | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 30A (Ta) | 9.6mOhm @ 15A, 10V | - | 6.6 nC @ 4.5 V | 1120 pF @ 10 V | - | 25W (Tc) | |||||||
 |
IXFJ80N10Q | - | |
5955 | 0.00000000 | IXYS | - | Tube | Obsolete | IXFJ80 | - | 1 (Unlimited) | OBSOLETE | 0000.00.0000 | 30 | - | |||||||||||||||||||
 |
SIDR104AEP-T1-RE3 | 3.0500 | |
8 | 0.00000000 | Vishay Siliconix | TrenchFET® Gen IV | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | MOSFET (Metal Oxide) | PowerPAK® SO-8DC | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 100 V | 21.1A (Ta), 90.5A (Tc) | 7.5V, 10V | 6.1mOhm @ 15A, 10V | 4V @ 250µA | 70 nC @ 10 V | ±20V | 3250 pF @ 50 V | - | 6.5W (Ta), 120W (Tc) | |||||
 |
STD12NF06T4 | 1.2300 | |
2611 | 0.00000000 | STMicroelectronics | STripFET™ II | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | STD12 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 60 V | 12A (Tc) | 10V | 100mOhm @ 6A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 315 pF @ 25 V | - | 30W (Tc) | ||
|
MMFT2955ET1G | - | |
3767 | 0.00000000 | onsemi | * | Obsolete | MMFT29 | - | 1 (Unlimited) | REACH Unaffected | OBSOLETE | 0000.00.0000 | 1,000 | ||||||||||||||||||||
 |
SISS64DN-T1-GE3 | 1.3800 | |
2142 | 0.00000000 | Vishay Siliconix | TrenchFET® Gen IV | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | SISS64 | MOSFET (Metal Oxide) | PowerPAK® 1212-8S | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 40A (Tc) | 4.5V, 10V | 2.1mOhm @ 10A, 10V | 2.2V @ 250µA | 68 nC @ 10 V | +20V, -16V | 3420 pF @ 15 V | - | 57W (Tc) | |||
 |
ISC009N06LM5ATMA1 | 4.7800 | |
8085 | 0.00000000 | Infineon Technologies | OptiMOS™ 5 | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | ISC009N | MOSFET (Metal Oxide) | PG-TSON-8-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 41A (Ta), 348A (Tc) | 4.5V, 10V | 0.9mOhm @ 50A, 10V | 2.3V @ 147µA | 209 nC @ 10 V | ±20V | 13000 pF @ 30 V | - | 3W (Ta), 214W (Tc) | ||
|
JANTXV2N6800 | - | |
8784 | 0.00000000 | Microsemi Corporation | Military, MIL-PRF-19500/557 | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-205AF Metal Can | MOSFET (Metal Oxide) | TO-205AF (TO-39) | - | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 400 V | 3A (Tc) | 10V | 1.1Ohm @ 3A, 10V | 4V @ 250µA | 34.75 nC @ 10 V | ±20V | - | 800mW (Ta), 25W (Tc) | ||||
 |
FCD5N60TM-WS | 1.7900 | |
2 | 0.00000000 | onsemi | SuperFET™ | Tape & Reel (TR) | Not For New Designs | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | FCD5N60 | MOSFET (Metal Oxide) | TO-252AA | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 600 V | 4.6A (Tc) | 10V | 950mOhm @ 2.3A, 10V | 5V @ 250µA | 16 nC @ 10 V | ±30V | 600 pF @ 25 V | - | 54W (Tc) | ||
|
IRL3714ZSTRRPBF | - | |
6827 | 0.00000000 | Infineon Technologies | HEXFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | N-Channel | 20 V | 36A (Tc) | 4.5V, 10V | 16mOhm @ 15A, 10V | 2.55V @ 250µA | 7.2 nC @ 4.5 V | ±20V | 550 pF @ 10 V | - | 35W (Tc) | ||||
 |
IPI80N04S204AKSA1 | - | |
8068 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tube | Discontinued at SIC | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | IPI80N | MOSFET (Metal Oxide) | PG-TO262-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 500 | N-Channel | 40 V | 80A (Tc) | 10V | 3.7mOhm @ 80A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 5300 pF @ 25 V | - | 300W (Tc) | ||
|
MCG18P02A-TP | - | |
3793 | 0.00000000 | Micro Commercial Co | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | MCG18 | MOSFET (Metal Oxide) | DFN3030-8 | download | ROHS3 Compliant | 353-MCG18P02A-TP | EAR99 | 8541.29.0095 | 1 | P-Channel | 20 V | 18A | 1.8V, 4.5V | 8.5mOhm @ 4.2A, 4.5V | 900mV @ 250µA | 29 nC @ 10 V | ±8V | 1255 pF @ 10 V | - | 52W | |||
 |
TSM3443CX6 RFG | 0.9700 | |
11 | 0.00000000 | Taiwan Semiconductor Corporation | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | TSM3443 | MOSFET (Metal Oxide) | SOT-26 | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 4.7A (Ta) | 2.5V, 4.5V | 60mOhm @ 4.7A, 4.5V | 1.4V @ 250µA | 9 nC @ 4.5 V | ±12V | 640 pF @ 10 V | - | 2W (Ta) | ||
 |
TSM043NH04LCR RLG | 3.4600 | |
4 | 0.00000000 | Taiwan Semiconductor Corporation | PerFET™ | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerTDFN | TSM043 | MOSFET (Metal Oxide) | 8-PDFNU (5x6) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 40 V | 20A (Ta), 54A (Tc) | 4.5V, 10V | 4.3mOhm @ 27A, 10V | 2.2V @ 250µA | 42 nC @ 10 V | ±16V | 2480 pF @ 25 V | - | 100W (Tc) | ||
 |
IRF6637TRPBF | 0.8300 | |
31 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MP | MOSFET (Metal Oxide) | DIRECTFET™ MP | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 30 V | 14A (Ta), 59A (Tc) | 4.5V, 10V | 7.7mOhm @ 14A, 10V | 2.35V @ 250µA | 17 nC @ 4.5 V | ±20V | 1330 pF @ 15 V | - | 2.3W (Ta), 42W (Tc) | ||||||
 |
SIDR390DP-T1-GE3 | 2.4900 | |
6 | 0.00000000 | Vishay Siliconix | TrenchFET® Gen IV | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | SIDR390 | MOSFET (Metal Oxide) | PowerPAK® SO-8DC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 69.9A (Ta), 100A (Tc) | 4.5V, 10V | 0.8mOhm @ 20A, 10V | 2V @ 250µA | 153 nC @ 10 V | +20V, -16V | 10180 pF @ 15 V | - | 6.25W (Ta), 125W (Tc) | |||
|
RJK5031DPD-01#J2 | - | |
4341 | 0.00000000 | Renesas Electronics America Inc | - | Tape & Reel (TR) | Obsolete | 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | MP-3A | - | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 500 V | 3A (Ta) | 10V | 3.2Ohm @ 1.5A, 10V | 4.5V @ 1mA | ±30V | 280 pF @ 25 V | - | 40.3W (Tc) | ||||||
 |
IRFSL4321PBF | - | |
5953 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | TO-262 | download | 1 (Unlimited) | REACH Unaffected | SP001550194 | EAR99 | 8541.29.0095 | 50 | N-Channel | 150 V | 85A (Tc) | 10V | 15mOhm @ 33A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±30V | 4460 pF @ 25 V | - | 350W (Tc) | |||
 |
IPW90R120C3FKSA1 | - | |
2826 | 0.00000000 | Infineon Technologies | CoolMOS™ | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IPW90R | MOSFET (Metal Oxide) | PG-TO247-3-1 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 240 | N-Channel | 900 V | 36A (Tc) | 10V | 120mOhm @ 26A, 10V | 3.5V @ 2.9mA | 270 nC @ 10 V | ±20V | 6800 pF @ 100 V | - | 417W (Tc) | ||
 |
TP2635N3-G | 2.0000 | |
832 | 0.00000000 | Microchip Technology | - | Bag | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TP2635 | MOSFET (Metal Oxide) | TO-92-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | P-Channel | 350 V | 180mA (Tj) | 2.5V, 10V | 15Ohm @ 300mA, 10V | 2V @ 1mA | ±20V | 300 pF @ 25 V | - | 1W (Ta) | |||
 |
ICE10N60FP | 1.7300 | |
500 | 0.00000000 | IceMOS Technology | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | MOSFET (Metal Oxide) | TO-220 Full Pack | download | 5133-ICE10N60FP | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 10A (Tc) | 10V | 330mOhm @ 5A, 10V | 3.9V @ 250µA | 41 nC @ 10 V | ±20V | 1250 pF @ 25 V | - | 35W (Tc) | |||||
 |
FQA34N20L | - | |
5784 | 0.00000000 | onsemi | QFET® | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | FQA3 | MOSFET (Metal Oxide) | TO-3P | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 200 V | 34A (Tc) | 5V, 10V | 75mOhm @ 17A, 10V | 2V @ 250µA | 72 nC @ 5 V | ±20V | 3900 pF @ 25 V | - | 210W (Tc) | |||
 |
IRF7464TR | - | |
2100 | 0.00000000 | Infineon Technologies | HEXFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | 8-SO | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 4,000 | N-Channel | 200 V | 1.2A (Ta) | 10V | 730mOhm @ 720mA, 10V | 5.5V @ 250µA | 14 nC @ 10 V | ±30V | 280 pF @ 25 V | - | 2.5W (Ta) | |||
|
PH2625L,115 | 0.3000 | |
5 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | PH26 | download | ROHS3 Compliant | REACH Unaffected | EAR99 | 8541.29.0095 | 1,500 | |||||||||||||||||||
 |
RTR040N03HZGTL | 0.6800 | |
15 | 0.00000000 | Rohm Semiconductor | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SC-96 | RTR040 | MOSFET (Metal Oxide) | TSMT3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 4A (Ta) | 2.5V, 4.5V | 48mOhm @ 4A, 4.5V | 1.5V @ 1mA | 8.3 nC @ 4.5 V | ±12V | 475 pF @ 10 V | - | 700mW (Ta) | ||
|
TSM60NB190CI | 4.4264 | |
7507 | 0.00000000 | Taiwan Semiconductor Corporation | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TSM60 | MOSFET (Metal Oxide) | ITO-220 | download | ROHS3 Compliant | REACH Unaffected | 1801-TSM60NB190CI | EAR99 | 8541.29.0095 | 4,000 | N-Channel | 600 V | 18A (Tc) | 10V | 190mOhm @ 6A, 10V | 4V @ 250µA | 31 nC @ 10 V | ±30V | 1273 pF @ 100 V | - | 33.8W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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