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Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) |
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ZVN3306ASTOB | - | ![]() |
7384 | 0.00000000 | Diodes Incorporated | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | E-Line-3 | MOSFET (Metal Oxide) | E-Line (TO-92 compatible) | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 2,000 | N-Channel | 60 V | 270mA (Ta) | 10V | 5Ohm @ 500mA, 10V | 2.4V @ 1mA | ±20V | 35 pF @ 18 V | - | 625mW (Ta) | |||||
SUP60N06-12P-E3 | - | ![]() |
1117 | 0.00000000 | Vishay Siliconix | TrenchFET® | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | SUP60 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | SUP60N0612PE3 | EAR99 | 8541.29.0095 | 500 | N-Channel | 60 V | 60A (Tc) | 10V | 12mOhm @ 30A, 10V | 4.5V @ 250µA | 55 nC @ 10 V | ±20V | 1970 pF @ 30 V | - | 3.25W (Ta), 100W (Tc) | ||
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2SK3670(T6CANO,A,F | - | ![]() |
5777 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Through Hole | TO-226-3, TO-92-3 Long Body | 2SK3670 | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 670mA (Tj) | ||||||||||||||||
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NP80N055MHE-S18-AY | 2.2400 | ![]() |
2 | 0.00000000 | Renesas | - | Bulk | Obsolete | 175°C | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | MP-25K | - | RoHS non-compliant | REACH Unaffected | 2156-NP80N055MHE-S18-AY | EAR99 | 8541.29.0095 | 1 | N-Channel | 55 V | 80A (Tc) | 10V | 11mOhm @ 40A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 3600 pF @ 25 V | - | 1.8W (Ta), 120W (Tc) | |||
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SIR616DP-T1-GE3 | 1.4800 | ![]() |
5061 | 0.00000000 | Vishay Siliconix | ThunderFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | SIR616 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 200 V | 20.2A (Tc) | 7.5V, 10V | 50.5mOhm @ 10A, 10V | 4V @ 250µA | 28 nC @ 7.5 V | ±20V | 1450 pF @ 100 V | - | 52W (Tc) | |||
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SI7440DP-T1-GE3 | - | ![]() |
2964 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | SI7440 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 12A (Ta) | 4.5V, 10V | 6.5mOhm @ 21A, 10V | 3V @ 250µA | 35 nC @ 4.5 V | ±20V | - | 1.9W (Ta) | |||
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SIHFR1N60A-GE3 | 1.0000 | ![]() |
2762 | 0.00000000 | Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SIHFR1 | MOSFET (Metal Oxide) | TO-252AA | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 600 V | 1.4A (Tc) | 10V | 7Ohm @ 840mA, 10V | 4V @ 250µA | 14 nC @ 10 V | ±30V | 229 pF @ 25 V | - | 36W (Tc) | ||||
DMWS120H100SM4 | 20.2100 | ![]() |
14 | 0.00000000 | Diodes Incorporated | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | DMWS120 | SiC (Silicon Carbide Junction Transistor) | TO-247-4 | download | ROHS3 Compliant | Not Applicable | 31-DMWS120H100SM4 | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 37.2A (Tc) | 15V | 100mOhm @ 20A, 15V | 3.5V @ 5mA | 52 nC @ 15 V | +19V, -8V | 1516 pF @ 1000 V | - | 208W (Tc) | |||
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AOD4454 | 0.4763 | ![]() |
4265 | 0.00000000 | Alpha & Omega Semiconductor Inc. | - | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | AOD44 | MOSFET (Metal Oxide) | TO-252 (DPAK) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 150 V | 3A (Ta), 20A (Tc) | 7V, 10V | 94mOhm @ 10A, 10V | 4.6V @ 250µA | 20 nC @ 10 V | ±20V | 985 pF @ 75 V | - | 2.5W (Ta), 100W (Tc) | ||
BSS84Q-13-F-52 | 0.0502 | ![]() |
7305 | 0.00000000 | Diodes Incorporated | Automotive, AEC-Q101 | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | BSS84 | MOSFET (Metal Oxide) | SOT-23-3 | download | 1 (Unlimited) | 31-BSS84Q-13-F-52 | EAR99 | 8541.21.0095 | 10,000 | P-Channel | 50 V | 130mA (Ta) | 5V | 10Ohm @ 100mA, 5V | 2V @ 1mA | 0.59 nC @ 10 V | ±20V | 45 pF @ 25 V | - | 300mW (Ta) | ||||
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IRL540A | - | ![]() |
7448 | 0.00000000 | onsemi | - | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | IRL54 | MOSFET (Metal Oxide) | TO-220-3 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 28A (Tc) | 5V | 58mOhm @ 14A, 5V | 2V @ 250µA | 54 nC @ 5 V | ±20V | 1580 pF @ 25 V | - | 121W (Tc) | |||
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TJ30S06M3L,LXHQ | 1.2000 | ![]() |
137 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ30S06 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 60 V | 30A (Ta) | 6V, 10V | 21.8mOhm @ 15A, 10V | 3V @ 1mA | 80 nC @ 10 V | +10V, -20V | 3950 pF @ 10 V | - | 68W (Tc) | ||||
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FDS6064N3 | 1.6200 | ![]() |
30 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | 8-SO | download | ROHS3 Compliant | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 20 V | 23A (Ta) | 1.8V, 4.5V | 4mOhm @ 23A, 4.5V | 1.5V @ 250µA | 98 nC @ 4.5 V | ±8V | 7191 pF @ 10 V | - | 3W (Ta) | |||||
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FDD3706 | 0.6000 | ![]() |
1 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252, (D-Pak) | download | 0000.00.0000 | 500 | N-Channel | 20 V | 14.7A (Ta), 50A (Tc) | 2.5V, 10V | 9mOhm @ 16.2A, 10V | 1.5V @ 250µA | 23 nC @ 4.5 V | ±12V | 1882 pF @ 10 V | - | 3.8W (Ta), 44W (Tc) | |||||||
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IRF6644TRPBF | 3.0200 | ![]() |
16 | 0.00000000 | Infineon Technologies | HEXFET® | Tape & Reel (TR) | Active | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MN | IRF6644 | MOSFET (Metal Oxide) | DIRECTFET™ MN | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 4,800 | N-Channel | 100 V | 10.3A (Ta), 60A (Tc) | 10V | 13mOhm @ 10.3A, 10V | 4.8V @ 150µA | 47 nC @ 10 V | ±20V | 2210 pF @ 25 V | - | 2.8W (Ta), 89W (Tc) | ||
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FDFMA3P029Z | 0.2500 | ![]() |
2 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | MOSFET (Metal Oxide) | 6-MLP (2x2) | download | EAR99 | 8542.39.0001 | 1 | P-Channel | 30 V | 3.3A (Ta) | 87mOhm @ 3.3A, 10V | 3V @ 250µA | 10 nC @ 10 V | 435 pF @ 15 V | Schottky Diode (Isolated) | 1.4W (Ta) | ||||||||
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RJK03H0DPA-00#J5A | 0.7800 | ![]() |
21 | 0.00000000 | Renesas Electronics America Inc | * | Bulk | Active | - | Not applicable | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.29.0095 | 387 | |||||||||||||||||||
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FQI7P06TU | 0.4100 | ![]() |
2 | 0.00000000 | Fairchild Semiconductor | QFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK (TO-262) | download | ROHS3 Compliant | EAR99 | 8541.29.0095 | 1,000 | P-Channel | 60 V | 7A (Tc) | 10V | 410mOhm @ 3.5A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±25V | 295 pF @ 25 V | - | 3.75W (Ta), 45W (Tc) | |||||
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FDMA291P | 1.0000 | ![]() |
6897 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | MOSFET (Metal Oxide) | 6-MicroFET (2x2) | download | EAR99 | 8542.39.0001 | 1 | P-Channel | 20 V | 6.6A (Ta) | 1.8V, 4.5V | 42mOhm @ 6.6A, 4.5V | 1V @ 250µA | 14 nC @ 4.5 V | ±8V | 1000 pF @ 10 V | - | 2.4W (Ta) | ||||||
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IXTK600N04T2 | 21.2616 | ![]() |
9957 | 0.00000000 | IXYS | TrenchT2™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-264-3, TO-264AA | IXTK600 | MOSFET (Metal Oxide) | TO-264 (IXTK) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 25 | N-Channel | 40 V | 600A (Tc) | 10V | 1.5mOhm @ 100A, 10V | 3.5V @ 250µA | 590 nC @ 10 V | ±20V | 40000 pF @ 25 V | - | 1250W (Tc) | ||
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IRFC9140NB | - | ![]() |
4918 | 0.00000000 | Infineon Technologies | HEXFET® | Bulk | Obsolete | - | Surface Mount | Die | MOSFET (Metal Oxide) | Die | - | ROHS3 Compliant | REACH Unaffected | 448-IRFC9140NB | OBSOLETE | 1 | - | 100 V | 23A | 10V | 117mOhm @ 23A, 10V | - | - | - | - | ||||||
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TK155E65Z,S1X | 3.2600 | ![]() |
181 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 18A (Ta) | 10V | 155mOhm @ 9A, 10V | 4V @ 730µA | 29 nC @ 10 V | ±30V | 1635 pF @ 300 V | - | 150W (Tc) | ||||
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FDS8876 | 0.5000 | ![]() |
562 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | 8-SOIC | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 30 V | 12.5A (Ta) | 4.5V, 10V | 8.2mOhm @ 12.5A, 10V | 2.5V @ 250µA | 36 nC @ 10 V | ±20V | 1650 pF @ 15 V | - | 2.5W (Ta) | ||||||
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FDMS0312S | 0.2300 | ![]() |
3 | 0.00000000 | Fairchild Semiconductor | PowerTrench®, SyncFET™ | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 8-PQFN (5x6) | download | EAR99 | 8542.39.0001 | 1,398 | N-Channel | 30 V | 19A (Ta), 42A (Tc) | 4.5V, 10V | 4.9mOhm @ 18A, 10V | 3V @ 1mA | 46 nC @ 10 V | ±20V | 2820 pF @ 15 V | - | 2.5W (Ta), 46W (Tc) | ||||||
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BSC360N15NS3GATMA1 | 2.0700 | ![]() |
35 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | BSC360 | MOSFET (Metal Oxide) | PG-TDSON-8-1 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 150 V | 33A (Tc) | 8V, 10V | 36mOhm @ 25A, 10V | 4V @ 45µA | 15 nC @ 10 V | ±20V | 1190 pF @ 75 V | - | 74W (Tc) | ||
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MMDF2P01HDR2 | 0.1400 | ![]() |
17 | 0.00000000 | onsemi | * | Bulk | Active | download | RoHS non-compliant | 1 (Unlimited) | REACH Affected | EAR99 | 8541.29.0095 | 2,500 | |||||||||||||||||||
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IRLS4030-7PPBF | - | ![]() |
8432 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Discontinued at SIC | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | MOSFET (Metal Oxide) | D2PAK (7-Lead) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 190A (Tc) | 4.5V, 10V | 3.9mOhm @ 110A, 10V | 2.5V @ 250µA | 140 nC @ 4.5 V | ±16V | 11490 pF @ 50 V | - | 370W (Tc) | |||
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IRFB38N20DPBF | 1.3300 | ![]() |
3 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | EAR99 | 8541.29.0095 | 226 | N-Channel | 200 V | 43A (Tc) | 10V | 54mOhm @ 26A, 10V | 5V @ 250µA | 91 nC @ 10 V | ±20V | 2900 pF @ 25 V | - | 3.8W (Ta), 300W (Tc) | ||||||
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DMNH6008SPSQ-13 | 0.7088 | ![]() |
8616 | 0.00000000 | Diodes Incorporated | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | DMNH6008 | MOSFET (Metal Oxide) | PowerDI5060-8 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 60 V | 16.5A (Ta), 88A (Tc) | 10V | 8mOhm @ 20A, 10V | 4V @ 250µA | 40.1 nC @ 10 V | ±20V | 2597 pF @ 30 V | - | 1.6W (Ta) | ||
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NTB004N10G | 6.9600 | ![]() |
1634 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | NTB004 | MOSFET (Metal Oxide) | D²PAK-3 (TO-263-3) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 488-NTB004N10GTR | EAR99 | 8541.29.0095 | 800 | N-Channel | 100 V | 201A (Ta) | 10V | 4.2mOhm @ 100A, 10V | 4V @ 500µA | 175 nC @ 10 V | ±20V | 11900 pF @ 50 V | - | 340W (Tc) |
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