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Diodes(10)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Mounting Type | Package / Case | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Speed | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IV1D12020T3 | 17.9500 |  |
120 | 0.00000000 | Inventchip | - | Tube | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247-3 | download | ROHS3 Compliant | 1 (Unlimited) | 4084-IV1D12020T3 | EAR99 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 30A (DC) | 1.8 V @ 20 A | 0 ns | 100 µA @ 1200 V | -55°C ~ 175°C | ||||
 |
IV1D12010O2 | 11.0300 | |
190 | 0.00000000 | Inventchip | - | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2 | download | ROHS3 Compliant | 1 (Unlimited) | 4084-IV1D12010O2 | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 1200 V | 1.8 V @ 10 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 28A | 575pF @ 1V, 1MHz | |||
 |
IV1D12030U3 | 23.8500 | |
110 | 0.00000000 | Inventchip | - | Tube | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247-3 | download | ROHS3 Compliant | 1 (Unlimited) | 4084-IV1D12030U3 | EAR99 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 44A (DC) | 1.8 V @ 15 A | 0 ns | 80 µA @ 1200 V | -55°C ~ 175°C | ||||
 |
IV1D12010T2 | 11.0300 | |
110 | 0.00000000 | Inventchip | - | Tube | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2 | download | ROHS3 Compliant | 1 (Unlimited) | 4084-IV1D12010T2 | EAR99 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.8 V @ 10 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 30A | 575pF @ 1V, 1MHz | ||||
 |
IV1D12020T2 | 17.9500 | |
120 | 0.00000000 | Inventchip | - | Tube | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2 | download | ROHS3 Compliant | 1 (Unlimited) | 4084-IV1D12020T2 | EAR99 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.8 V @ 20 A | 0 ns | 120 µA @ 1200 V | -55°C ~ 175°C | 54A | 1114pF @ 1V, 1MHz | ||||
 |
IV1D06006P3 | 4.2300 | |
2 | 0.00000000 | Inventchip | - | Tape & Reel (TR) | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252-3 | download | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8541.10.0080 | 2,500 | No Recovery Time > 500mA (Io) | 650 V | 1.65 V @ 6 A | 0 ns | 10 µA @ 650 V | -55°C ~ 175°C | 16.7A | 224pF @ 1V, 1MHz | ||||
 |
IV1D12015T2 | 13.6300 | |
120 | 0.00000000 | Inventchip | - | Tube | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2 | download | ROHS3 Compliant | 1 (Unlimited) | 4084-IV1D12015T2 | EAR99 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.8 V @ 15 A | 0 ns | 80 µA @ 1200 V | -55°C ~ 175°C | 44A | 888pF @ 1V, 1MHz | ||||
 |
IV1D12040U2 | 27.8300 | |
120 | 0.00000000 | Inventchip | - | Tube | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2 | download | ROHS3 Compliant | 1 (Unlimited) | 4084-IV1D12040U2 | EAR99 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 102A (DC) | 1.8 V @ 40 A | 0 ns | 200 µA @ 1200 V | -55°C ~ 175°C | ||||
 |
IV1D12005O2 | 6.1300 | |
164 | 0.00000000 | Inventchip | - | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2 | download | ROHS3 Compliant | 1 (Unlimited) | 4084-IV1D12005O2 | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 1200 V | 1.8 V @ 5 A | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | 17A | 320pF @ 1V, 1MHz | |||
 |
IV1D06006O2 | 4.0900 | |
136 | 0.00000000 | Inventchip | - | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2 | download | ROHS3 Compliant | 1 (Unlimited) | 4084-IV1D06006O2 | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.65 V @ 6 A | 0 ns | 10 µA @ 650 V | -55°C ~ 175°C | 17.4A | 212pF @ 1V, 1MHz |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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