Tel: +86-0755-83501315
Email: sales@sic-components.com
Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Mounting Type | Package / Case | Base Product Number | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Speed | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F |
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WNSC5D126506Q | - | ![]() |
3206 | 0.00000000 | WeEn Semiconductors | - | Tube | Active | Through Hole | TO-220-2 | WNSC5 | SiC (Silicon Carbide) Schottky | TO-220AC | - | 1740-WNSC5D126506Q | EAR99 | 8541.10.0080 | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 12 A | 0 ns | 60 µA @ 650 V | -55°C ~ 175°C | 12A | 420pF @ 1V, 1MHz | |||||
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WNSC5D12650T6J | - | ![]() |
4059 | 0.00000000 | WeEn Semiconductors | - | Tape & Reel (TR) | Active | Surface Mount | 4-VSFN Exposed Pad | WNSC5 | SiC (Silicon Carbide) Schottky | 5-DFN (8x8) | - | 1740-WNSC5D12650T6JTR | EAR99 | 8541.10.0080 | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 12 A | 0 ns | 60 µA @ 650 V | -55°C ~ 175°C | 12A | 420pF @ 1V, 1MHz | |||||
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WNSC5D206506Q | - | ![]() |
6400 | 0.00000000 | WeEn Semiconductors | - | Tube | Active | Through Hole | TO-220-2 | WNSC5 | SiC (Silicon Carbide) Schottky | TO-220AC | - | 1740-WNSC5D206506Q | EAR99 | 8541.10.0080 | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 20 A | 0 ns | 100 µA @ 650 V | -55°C ~ 175°C | 20A | 640pF @ 1V, 1MHz | |||||
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WNSC5D046506Q | - | ![]() |
8122 | 0.00000000 | WeEn Semiconductors | - | Tube | Active | Through Hole | TO-220-2 | WNSC5 | SiC (Silicon Carbide) Schottky | TO-220AC | - | 1740-WNSC5D046506Q | EAR99 | 8541.10.0080 | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 4 A | 0 ns | 20 µA @ 650 V | -55°C ~ 175°C | 4A | 138pF @ 1V, 1MHz | |||||
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WNSC5D06650D6J | - | ![]() |
4757 | 0.00000000 | WeEn Semiconductors | - | Tape & Reel (TR) | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | WNSC5 | SiC (Silicon Carbide) Schottky | DPAK | - | 1740-WNSC5D06650D6JTR | EAR99 | 8541.10.0080 | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 6 A | 0 ns | 30 µA @ 650 V | -55°C ~ 175°C | 6A | 201pF @ 1V, 1MHz | |||||
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WNSC5D16650CW6Q | - | ![]() |
7644 | 0.00000000 | WeEn Semiconductors | - | Tube | Active | Through Hole | TO-247-3 | WNSC5 | SiC (Silicon Carbide) Schottky | TO-247-3 | - | 1740-WNSC5D16650CW6Q | EAR99 | 8541.10.0080 | 1 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 16A | 1.7 V @ 8 A | 0 ns | 40 µA @ 650 V | -55°C ~ 175°C | |||||
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WNSC5D10650T6J | - | ![]() |
7976 | 0.00000000 | WeEn Semiconductors | - | Tape & Reel (TR) | Active | Surface Mount | 4-VSFN Exposed Pad | WNSC5 | SiC (Silicon Carbide) Schottky | 5-DFN (8x8) | - | 1740-WNSC5D10650T6JTR | EAR99 | 8541.10.0080 | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 10A | 323pF @ 1V, 1MHz | |||||
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WNSC5D04650T6J | - | ![]() |
6725 | 0.00000000 | WeEn Semiconductors | - | Tape & Reel (TR) | Active | Surface Mount | 4-VSFN Exposed Pad | WNSC5 | SiC (Silicon Carbide) Schottky | 5-DFN (8x8) | - | 1740-WNSC5D04650T6JTR | EAR99 | 8541.10.0080 | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 4 A | 0 ns | 20 µA @ 650 V | -55°C ~ 175°C | 4A | 138pF @ 1V, 1MHz | |||||
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WNSC5D10650D6J | - | ![]() |
7153 | 0.00000000 | WeEn Semiconductors | - | Tape & Reel (TR) | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | WNSC5 | SiC (Silicon Carbide) Schottky | DPAK | - | 1740-WNSC5D10650D6JTR | EAR99 | 8541.10.0080 | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 10A | 323pF @ 1V, 1MHz | |||||
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WNSC2D101200D6J | 1.3300 | ![]() |
8173 | 0.00000000 | WeEn Semiconductors | - | Bulk | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | WNSC2 | SiC (Silicon Carbide) Schottky | DPAK | download | EAR99 | 8541.10.0080 | 2,500 | No Recovery Time > 500mA (Io) | 1200 V | 1.6 V @ 10 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 10A | 481pF @ 1V, 1MHz | ||||||
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BYV30JT-600PMQ | 0.7721 | ![]() |
9894 | 0.00000000 | WeEn Semiconductors | - | Bulk | Active | Through Hole | TO-3P-3, SC-65-3 | BYV30 | Standard | TO-3PF | - | EAR99 | 8541.10.0080 | 480 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 1.8 V @ 30 A | 65 ns | 10 µA @ 600 V | 175°C | 30A | - | ||||||
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WB30FC120ALZ | 1.2113 | ![]() |
5763 | 0.00000000 | WeEn Semiconductors | - | Bulk | Active | Surface Mount | Die | WB30 | Standard | Wafer | - | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 1200 V | 3.5 V @ 30 A | 65 ns | 250 µA @ 1200 V | 175°C | 30A | - | ||||||
BYT28X-500Q | 0.3767 | ![]() |
4290 | 0.00000000 | WeEn Semiconductors | - | Bulk | Active | Through Hole | TO-220-3 Full Pack, Isolated Tab | BYT28 | Standard | TO-220F | download | EAR99 | 8541.10.0080 | 1,000 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 500 V | 10A | 1.4 V @ 5 A | 60 ns | 10 µA @ 500 V | 150°C | |||||||
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BYV10D-600PJ | 0.2136 | ![]() |
4015 | 0.00000000 | WeEn Semiconductors | - | Tape & Reel (TR) | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | BYV10 | Standard | DPAK | download | EAR99 | 8541.10.0080 | 2,500 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 1.3 V @ 10 A | 100 ns | 10 µA @ 600 V | 175°C | 10A | - | ||||||
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MUR440J | 0.1249 | ![]() |
5660 | 0.00000000 | WeEn Semiconductors | - | Tape & Reel (TR) | Active | Surface Mount | DO-214AB, SMC | MUR440 | Standard | SMC | download | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 400 V | 1.25 V @ 4 A | 75 ns | 10 µA @ 400 V | 175°C | 4A | - | ||||||
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MUR320J | 0.1183 | ![]() |
7804 | 0.00000000 | WeEn Semiconductors | - | Bulk | Active | Surface Mount | DO-214AB, SMC | MUR320 | Standard | SMC | download | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | 875 mV @ 3 A | 35 ns | 10 µA @ 200 V | 175°C | 3A | - | ||||||
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WB100FC120ALZ | 2.5754 | ![]() |
3492 | 0.00000000 | WeEn Semiconductors | - | Bulk | Active | Surface Mount | Die | WB100 | Standard | Wafer | - | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 1200 V | 3.3 V @ 100 A | 90 ns | 250 µA @ 1200 V | 175°C | 100A | - | ||||||
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WNSC2D2012006Q | 2.9042 | ![]() |
7419 | 0.00000000 | WeEn Semiconductors | - | Bulk | Active | Through Hole | TO-220-2 | WNSC2 | SiC (Silicon Carbide) Schottky | TO-220AC | download | EAR99 | 8541.10.0080 | 1,000 | No Recovery Time > 500mA (Io) | 1200 V | 1.65 V @ 20 A | 0 ns | 100 µA @ 1200 V | -55°C ~ 175°C | 20A | 950pF @ 1V, 1MHz | ||||||
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WNB199V5APTSV | 0.9319 | ![]() |
8774 | 0.00000000 | WeEn Semiconductors | - | Bulk | Active | Surface Mount | Die | WNB199 | Standard | Wafer | - | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 2 V @ 60 A | 55 ns | 10 µA @ 600 V | 175°C | 60A | - | ||||||
BYV410X-600/L01Q | 0.6979 | ![]() |
9126 | 0.00000000 | WeEn Semiconductors | - | Bulk | Active | Through Hole | TO-220-3 Full Pack, Isolated Tab | BYV410 | Standard | TO-220F | download | EAR99 | 8541.10.0080 | 600 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 600 V | 20A | 2.1 V @ 10 A | 35 ns | 50 µA @ 600 V | 150°C | |||||||
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BYC40W-1200PQ | 1.8808 | ![]() |
1282 | 0.00000000 | WeEn Semiconductors | - | Bulk | Active | Through Hole | TO-247-2 | BYC40 | Standard | TO-247-2 | download | EAR99 | 8541.10.0080 | 450 | Fast Recovery =< 500ns, > 200mA (Io) | 1200 V | 3.3 V @ 40 A | 91 ns | 250 µA @ 1200 V | 175°C | 40A | - | ||||||
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WNSC2D1012006Q | 1.4521 | ![]() |
4911 | 0.00000000 | WeEn Semiconductors | - | Tube | Active | Through Hole | TO-220-2 | WNSC2 | SiC (Silicon Carbide) Schottky | TO-220AC | download | EAR99 | 8541.10.0080 | 1,000 | No Recovery Time > 500mA (Io) | 1200 V | 1.6 V @ 10 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 10A | 481pF @ 1V, 1MHz | ||||||
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BYC8D-600,127 | 0.9400 | ![]() |
6 | 0.00000000 | WeEn Semiconductors | - | Tube | Active | Through Hole | TO-220-2 | BYC8 | Standard | TO-220AC | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 2.9 V @ 8 A | 20 ns | 40 µA @ 600 V | 150°C (Max) | 8A | - | ||||
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BYV29F-600,127 | 0.4125 | ![]() |
7894 | 0.00000000 | WeEn Semiconductors | - | Tube | Active | Through Hole | TO-220-2 | BYV29 | Standard | TO-220AC | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 1.9 V @ 8 A | 35 ns | 50 µA @ 600 V | 150°C (Max) | 9A | - | ||||
BYV32G-200,127 | 0.7260 | ![]() |
6441 | 0.00000000 | WeEn Semiconductors | - | Tube | Active | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | BYV32 | Standard | I2PAK (TO-262) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1,000 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 200 V | 20A | 850 mV @ 8 A | 25 ns | 30 µA @ 200 V | 150°C (Max) | |||||
BYV42G-200,127 | 0.7590 | ![]() |
1754 | 0.00000000 | WeEn Semiconductors | - | Tube | Active | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | BYV42 | Standard | I2PAK (TO-262) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1,000 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 200 V | 15A | 850 mV @ 15 A | 28 ns | 100 µA @ 200 V | 150°C (Max) | |||||
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BYV415W-600PQ | 1.4871 | ![]() |
9779 | 0.00000000 | WeEn Semiconductors | - | Tube | Active | Through Hole | TO-247-3 | BYV415 | Standard | TO-247-3 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 30 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 600 V | 15A | 2.1 V @ 15 A | 45 ns | 10 µA @ 600 V | -65°C ~ 175°C | ||||
NXPSC04650Q | - | ![]() |
1767 | 0.00000000 | WeEn Semiconductors | - | Tube | Last Time Buy | Through Hole | TO-220-2 | NXPSC | SiC (Silicon Carbide) Schottky | TO-220AC | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1,000 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 4 A | 0 ns | 170 µA @ 650 V | 175°C (Max) | 4A | 130pF @ 1V, 1MHz | ||||||
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WNS40100CQ | 1.2000 | ![]() |
15 | 0.00000000 | WeEn Semiconductors | - | Tube | Active | Through Hole | TO-220-3 | WNS40 | Schottky | TO-220E | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1,000 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 100 V | 20A | 780 mV @ 20 A | 50 µA @ 100 V | 150°C | ||||||
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WNSC2D151200WQ | 6.2000 | ![]() |
4 | 0.00000000 | WeEn Semiconductors | - | Tube | Active | Through Hole | TO-247-2 | WNSC2 | SiC (Silicon Carbide) Schottky | TO-247-2 | download | RoHS Compliant | 1 (Unlimited) | 1740-WNSC2D151200WQ | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 15 A | 0 ns | 150 µA @ 1200 V | 175°C | 15A | 700pF @ 1V, 1MHz |
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