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Email: sales@sic-components.com
Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Mounting Type | Package / Case | Technology | Supplier Device Package | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Speed | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F |
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SDS065J004D3 | 1.6100 | ![]() |
7809 | 0.00000000 | Sanan Semiconductor | - | Tape & Reel (TR) | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252-2L | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8541.10.0000 | 2,500 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 4 A | 0 ns | 12 µA @ 650 V | -55°C ~ 175°C | 14A | 213pF @ 0V, 1MHz | ||||
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SDS120J005D3 | 2.8000 | ![]() |
1989 | 0.00000000 | Sanan Semiconductor | - | Tape & Reel (TR) | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252-2L | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8541.10.0000 | 2,500 | No Recovery Time > 500mA (Io) | 1200 V | 1.5 V @ 5 A | 0 ns | 20 µA @ 1200 V | -55°C ~ 175°C | 22A | 400pF @ 0V, 1MHz | ||||
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SDS120J020G3 | 8.0400 | ![]() |
2728 | 0.00000000 | Sanan Semiconductor | - | Tube | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247-3L | ROHS3 Compliant | Not Applicable | 5023-SDS120J020G3 | EAR99 | 8541.10.0000 | 300 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 36A | 1.5 V @ 10 A | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | |||
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SDS120J002D3 | 1.4200 | ![]() |
4074 | 0.00000000 | Sanan Semiconductor | - | Tape & Reel (TR) | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252-2L | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8541.10.0000 | 2,500 | No Recovery Time > 500mA (Io) | 1200 V | 1.5 V @ 2 A | 0 ns | 8 µA @ 1200 V | -55°C ~ 175°C | 11A | 165pF @ 0V, 1MHz | ||||
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SDS120J010H3 | 5.0100 | ![]() |
5247 | 0.00000000 | Sanan Semiconductor | - | Tube | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2L | ROHS3 Compliant | Not Applicable | 5023-SDS120J010H3 | EAR99 | 8541.10.0000 | 300 | No Recovery Time > 500mA (Io) | 1200 V | 1.5 V @ 10 A | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | 36A | 780pF @ 0V, 1MHz | |||
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SDS065J020H3 | 6.3000 | ![]() |
2667 | 0.00000000 | Sanan Semiconductor | - | Tube | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2L | ROHS3 Compliant | Not Applicable | 5023-SDS065J020H3 | EAR99 | 8541.10.0000 | 300 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 20 A | 0 ns | 40 µA @ 650 V | -55°C ~ 175°C | 51A | 1018pF @ 0V, 1MHz | |||
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SDS065J004C3 | 1.1000 | ![]() |
6146 | 0.00000000 | Sanan Semiconductor | - | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2L | ROHS3 Compliant | Not Applicable | 5023-SDS065J004C3 | EAR99 | 8541.10.0000 | 1,000 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 4 A | 0 ns | 12 µA @ 650 V | -55°C ~ 175°C | 14A | 213pF @ 0V, 1MHz | |||
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SDS120J010D3 | 5.1200 | ![]() |
9659 | 0.00000000 | Sanan Semiconductor | - | Tape & Reel (TR) | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252-2L | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8541.10.0000 | 2,500 | No Recovery Time > 500mA (Io) | 1200 V | 1.5 V @ 10 A | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | 37A | 780pF @ 0V, 1MHz | ||||
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SDS120J002C3 | 1.7000 | ![]() |
1625 | 0.00000000 | Sanan Semiconductor | - | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2L | ROHS3 Compliant | Not Applicable | 5023-SDS120J002C3 | EAR99 | 8541.10.0000 | 1,000 | No Recovery Time > 500mA (Io) | 1200 V | 1.5 V @ 2 A | 0 ns | 8 µA @ 1200 V | -55°C ~ 175°C | 11A | 165pF @ 0V, 1MHz | |||
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SDS065J016H3 | 5.9300 | ![]() |
5280 | 0.00000000 | Sanan Semiconductor | - | Tube | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2L | ROHS3 Compliant | Not Applicable | 5023-SDS065J016H3 | EAR99 | 8541.10.0000 | 300 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 16 A | 0 ns | 48 µA @ 650 V | -55°C ~ 175°C | 44A | 837pF @ 0V, 1MHz | |||
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SDS120J030H3 | 10.8300 | ![]() |
9338 | 0.00000000 | Sanan Semiconductor | - | Tube | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2L | ROHS3 Compliant | Not Applicable | 5023-SDS120J030H3 | EAR99 | 8541.10.0000 | 300 | No Recovery Time > 500mA (Io) | 1200 V | 1.5 V @ 30 A | 0 ns | 72 µA @ 1200 V | -55°C ~ 175°C | 95A | 2546pF @ 0V, 1MHz | |||
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SDS065J040G3 | 10.6200 | ![]() |
7453 | 0.00000000 | Sanan Semiconductor | - | Tube | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247-3L | ROHS3 Compliant | Not Applicable | 5023-SDS065J040G3 | EAR99 | 8541.10.0000 | 300 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 51A | 1.5 V @ 20 A | 0 ns | 40 µA @ 650 V | -55°C ~ 175°C | |||
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SDS065J020G3 | 6.3000 | ![]() |
3807 | 0.00000000 | Sanan Semiconductor | - | Tube | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247-3L | ROHS3 Compliant | Not Applicable | 5023-SDS065J020G3 | EAR99 | 8541.10.0000 | 300 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 30A | 1.5 V @ 10 A | 0 ns | 30 µA @ 650 V | -55°C ~ 175°C | |||
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SDS120J027H3 | 10.8900 | ![]() |
5197 | 0.00000000 | Sanan Semiconductor | - | Tube | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2L | ROHS3 Compliant | Not Applicable | 5023-SDS120J027H3 | EAR99 | 8541.10.0000 | 300 | No Recovery Time > 500mA (Io) | 1200 V | 1.8 V @ 27 A | 0 ns | 80 µA @ 1200 V | -55°C ~ 175°C | 77A | 1761pF @ 0V, 1MHz | |||
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SDS065J016G3 | 5.5300 | ![]() |
9398 | 0.00000000 | Sanan Semiconductor | - | Tube | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247-3L | ROHS3 Compliant | Not Applicable | 5023-SDS065J016G3 | EAR99 | 8541.10.0000 | 300 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 650 V | 25A | 1.5 V @ 8 A | 24 µA @ 650 V | -55°C ~ 175°C | ||||
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SDS065J010E3 | 2.8000 | ![]() |
1387 | 0.00000000 | Sanan Semiconductor | - | Tube | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiC (Silicon Carbide) Schottky | TO-263-2L | ROHS3 Compliant | 3 (168 Hours) | 5023-SDS065J010E3 | EAR99 | 8541.10.0000 | 800 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 10 A | 0 ns | 30 µA @ 650 V | -55°C ~ 175°C | 30A | 556pF @ 0V, 1MHz | |||
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SDS120J010C3 | 5.2700 | ![]() |
5757 | 0.00000000 | Sanan Semiconductor | - | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2L | ROHS3 Compliant | Not Applicable | 5023-SDS120J010C3 | EAR99 | 8541.10.0000 | 1,000 | No Recovery Time > 500mA (Io) | 1200 V | 1.5 V @ 10 A | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | 37A | 780pF @ 0V, 1MHz | |||
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SDS065J016C3 | 5.2700 | ![]() |
6166 | 0.00000000 | Sanan Semiconductor | - | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2L | ROHS3 Compliant | Not Applicable | 5023-SDS065J016C3 | EAR99 | 8541.10.0000 | 1,000 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 16 A | 0 ns | 48 µA @ 650 V | -55°C ~ 175°C | 44A | 837pF @ 0V, 1MHz | |||
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SDS120J005C3 | 2.9500 | ![]() |
1507 | 0.00000000 | Sanan Semiconductor | - | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2L | ROHS3 Compliant | Not Applicable | 5023-SDS120J005C3 | EAR99 | 8541.10.0000 | 1,000 | No Recovery Time > 500mA (Io) | 1200 V | 1.5 V @ 5 A | 0 ns | 20 µA @ 1200 V | -55°C ~ 175°C | 22A | 400pF @ 0V, 1MHz | |||
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SDS065J006E3 | 2.4600 | ![]() |
7074 | 0.00000000 | Sanan Semiconductor | - | Tube | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiC (Silicon Carbide) Schottky | TO-263-2L | ROHS3 Compliant | 3 (168 Hours) | 5023-SDS065J006E3 | EAR99 | 8541.10.0000 | 800 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 6 A | 0 ns | 20 µA @ 650 V | -55°C ~ 175°C | 20A | 310pF @ 0V, 1MHz | |||
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SDS065J012C3 | 3.6800 | ![]() |
4729 | 0.00000000 | Sanan Semiconductor | - | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2L | ROHS3 Compliant | Not Applicable | 5023-SDS065J012C3 | EAR99 | 8541.10.0000 | 1,000 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 12 A | 0 ns | 36 µA @ 650 V | -55°C ~ 175°C | 37A | 651pF @ 0V, 1MHz | |||
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SDS065J006C3 | 2.4200 | ![]() |
6272 | 0.00000000 | Sanan Semiconductor | - | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2L | ROHS3 Compliant | Not Applicable | 5023-SDS065J006C3 | EAR99 | 8541.10.0000 | 1,000 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 6 A | 0 ns | 20 µA @ 650 V | -55°C ~ 175°C | 20A | 310pF @ 0V, 1MHz | |||
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SDS065J020C3 | 5.7900 | ![]() |
3621 | 0.00000000 | Sanan Semiconductor | - | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2L | ROHS3 Compliant | Not Applicable | 5023-SDS065J020C3 | EAR99 | 8541.10.0000 | 1,000 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 20 A | 0 ns | 40 µA @ 650 V | -55°C ~ 175°C | 51A | 1018pF @ 0V, 1MHz | |||
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SDS065J010N3 | 3.0600 | ![]() |
4699 | 0.00000000 | Sanan Semiconductor | - | Tube | Active | ROHS3 Compliant | Not Applicable | 5023-SDS065J010N3 | EAR99 | 8541.10.0000 | 1,000 | |||||||||||||||
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SDS120J010E3 | 5.2700 | ![]() |
4536 | 0.00000000 | Sanan Semiconductor | - | Tube | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiC (Silicon Carbide) Schottky | TO-263-2L | ROHS3 Compliant | 3 (168 Hours) | 5023-SDS120J010E3 | EAR99 | 8541.10.0000 | 800 | No Recovery Time > 500mA (Io) | 1200 V | 1.5 V @ 10 A | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | 37A | 780pF @ 0V, 1MHz | |||
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SDS065J008S3 | 2.8300 | ![]() |
8248 | 0.00000000 | Sanan Semiconductor | - | Tape & Reel (TR) | Active | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8541.10.0000 | 3,000 | ||||||||||||||||
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SDS065J030G3 | 8.5100 | ![]() |
1351 | 0.00000000 | Sanan Semiconductor | - | Tube | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247-3L | ROHS3 Compliant | Not Applicable | 5023-SDS065J030G3 | EAR99 | 8541.10.0000 | 300 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 44A | 1.5 V @ 15 A | 0 ns | 48 µA @ 650 V | -55°C ~ 175°C | |||
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SDS120J010G3 | 5.7900 | ![]() |
8702 | 0.00000000 | Sanan Semiconductor | - | Tube | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247-3L | ROHS3 Compliant | Not Applicable | 5023-SDS120J010G3 | EAR99 | 8541.10.0000 | 300 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 20A | 1.5 V @ 5 A | 0 ns | 20 µA @ 1200 V | -55°C ~ 175°C | |||
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SDS065J006S3 | 2.3000 | ![]() |
1961 | 0.00000000 | Sanan Semiconductor | - | Tape & Reel (TR) | Active | Surface Mount | 4-PowerVSFN | SiC (Silicon Carbide) Schottky | 4-DFN (8x8) | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8541.10.0000 | 3,000 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 6 A | 0 ns | 18 µA @ 650 V | -55°C ~ 175°C | 23A | 310pF @ 0V, 1MHz | ||||
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SDS065J008C3 | 2.6300 | ![]() |
2379 | 0.00000000 | Sanan Semiconductor | - | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2L | ROHS3 Compliant | Not Applicable | 5023-SDS065J008C3 | EAR99 | 8541.10.0000 | 1,000 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 8 A | 0 ns | 24 µA @ 650 V | -55°C ~ 175°C | 25A | 395pF @ 0V, 1MHz |
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