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Diodes(184)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Mounting Type | Package / Case | Technology | Supplier Device Package | DataSheet | Moisture Sensitivity Level (MSL) | REACH Status | ECCN | HTSUS | Standard Package | Speed | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
G5S12008H | 8.0700 |  |
1340 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | download | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 8 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 16A | 550pF @ 0V, 1MHz | ||||
 |
G4S06508QT | 4.8300 | |
1848 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | 4-PowerTSFN | SiC (Silicon Carbide) Schottky | 4-DFN (8x8) | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 8 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 34A | 395pF @ 0V, 1MHz | |||
|
G3S06508H | 4.8000 | |
3000 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 8 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 14A | 550pF @ 0V, 1MHz | |||
 |
G5S12010BM | 13.9300 | |
3293 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | download | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 19.35A (DC) | 1.7 V @ 5 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | ||||
|
G3S06505H | 3.3300 | |
1856 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 5 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 15.4A | 424pF @ 0V, 1MHz | |||
|
GAS06520H | 11.1000 | |
8334 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 20 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 30A | 1390pF @ 0V, 1MHz | |||
|
G4S06520BT | 12.1100 | |
9600 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 31.2A (DC) | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | |||
 |
G3S17010A | 33.3600 | |
3150 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1700 V | 1.7 V @ 10 A | 0 ns | 100 µA @ 1700 V | -55°C ~ 175°C | 24A | 1500pF @ 0V, 1MHz | |||
 |
G3S06550P | 37.4900 | |
7840 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 50 A | 0 ns | 100 µA @ 650 V | -55°C ~ 175°C | 105A | 4400pF @ 0V, 1MHz | |||
|
G5S06508QT | 6.2000 | |
7166 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | 4-PowerTSFN | SiC (Silicon Carbide) Schottky | 4-DFN (8x8) | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 8 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 44.9A | 550pF @ 0V, 1MHz | |||
|
GAS06520A | 11.1000 | |
9864 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 20 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 66A | 1390pF @ 0V, 1MHz | |||
 |
G5S06504CT | 3.6600 | |
7292 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.6 V @ 4 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 13.8A | 181pF @ 0V, 1MHz | |||
 |
G3S06503D | 2.7300 | |
5471 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiC (Silicon Carbide) Schottky | TO-263 | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 3 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 11.5A | 181pF @ 0V, 1MHz | |||
|
G3S06520A | 11.9400 | |
1774 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 20 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 56.5A | 1170pF @ 0V, 1MHz | |||
|
G3S06506B | 5.0200 | |
1251 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 14A (DC) | 1.7 V @ 3 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | |||
|
G4S06510HT | 4.8600 | |
9481 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 20A | 550pF @ 0V, 1MHz | |||
|
G5S12005D | 7.4500 | |
5571 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiC (Silicon Carbide) Schottky | TO-263 | download | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 5 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 21A | 424pF @ 0V, 1MHz | ||||
|
G5S06508HT | 5.3200 | |
9812 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 8 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 20A | 550pF @ 0V, 1MHz | |||
|
G5S06510PT | 5.7300 | |
2769 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | - | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 39A | 645pF @ 0V, 1MHz | |||
|
G5S12016BM | 14.2800 | |
9360 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | download | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 27.9A (DC) | 1.7 V @ 8 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | ||||
|
G3S06510B | 7.1800 | |
7126 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 27A (DC) | 1.7 V @ 5 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | |||
|
G4S06515PT | 8.3300 | |
2725 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 15 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 39A | 645pF @ 0V, 1MHz | |||
|
G3S06502H | 2.2800 | |
3507 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 2 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 9A | 123pF @ 0V, 1MHz | |||
|
G4S06506AT | 3.9000 | |
5870 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.8 V @ 6 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 11.6A | 181pF @ 0V, 1MHz | |||
|
G3S12002C | 3.8200 | |
5093 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 2 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 8.8A | 170pF @ 0V, 1MHz | |||
|
G3S06505D | 3.2200 | |
3256 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiC (Silicon Carbide) Schottky | TO-263 | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 5 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 22.6A | 424pF @ 0V, 1MHz | |||
|
G3S06530A | 15.4900 | |
1167 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 30 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 110A | 2150pF @ 0V, 1MHz | |||
|
G4S12040BM | 53.2300 | |
3643 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 64.5A (DC) | 1.6 V @ 20 A | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | |||
|
G3S17005P | 28.5100 | |
8699 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1700 V | 1.7 V @ 5 A | 0 ns | 50 µA @ 1700 V | -55°C ~ 175°C | 29.5A | 780pF @ 0V, 1MHz | |||
|
G3S12004B | 6.7200 | |
3127 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 8.5A (DC) | 1.7 V @ 2 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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