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Diodes(184)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Mounting Type | Package / Case | Technology | Supplier Device Package | DataSheet | Moisture Sensitivity Level (MSL) | REACH Status | ECCN | HTSUS | Standard Package | Speed | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
G4S06510JT | 4.8600 |  |
8183 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 Isolated Tab | SiC (Silicon Carbide) Schottky | TO-220ISO | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 31.2A | 550pF @ 0V, 1MHz | |||
 |
G52YT | 2.7300 | |
3166 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | DO-214AC, SMA | SiC (Silicon Carbide) Schottky | SMA | download | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 2 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 5.8A | 116.75pF @ 0V, 1MHz | ||||
 |
G3S06510A | 5.3000 | |
8307 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 35A | 690pF @ 0V, 1MHz | |||
 |
G5S06506DT | 4.8300 | |
4519 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiC (Silicon Carbide) Schottky | TO-263 | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 6 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 24A | 395pF @ 0V, 1MHz | |||
|
G4S06508HT | 4.6900 | |
4952 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 8 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 18.5A | 395pF @ 0V, 1MHz | |||
 |
G3S12010H | 17.2000 | |
4267 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 16.5A | 765pF @ 0V, 1MHz | |||
|
G5S12010D | 12.6300 | |
2899 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiC (Silicon Carbide) Schottky | TO-263 | download | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 30.9A | 825pF @ 0V, 1MHz | ||||
|
G4S06515DT | 8.3300 | |
2967 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SiC (Silicon Carbide) Schottky | TO-263 | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 15 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 38A | 645pF @ 0V, 1MHz | |||
 |
G5S12040BM | 43.4000 | |
7005 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | download | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 62A (DC) | 1.7 V @ 20 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | ||||
|
G3S06506H | 4.0700 | |
2999 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 6 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 15.4A | 424pF @ 0V, 1MHz | |||
|
G3S12030B | 38.3700 | |
1386 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 42A (DC) | 1.7 V @ 15 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | |||
|
G5S06510AT | 6.3000 | |
6640 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 36A | 645pF @ 0V, 1MHz | |||
|
G5S06502AT | 2.4300 | |
9761 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 2 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 9.6A | 124pF @ 0V, 1MHz | |||
 |
G5S06504QT | 3.0800 | |
4440 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | 4-PowerTSFN | SiC (Silicon Carbide) Schottky | 4-DFN (8x8) | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.55 V @ 4 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 14A | 181pF @ 0V, 1MHz | |||
|
G5S06506AT | 4.8300 | |
2979 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 6 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 24.5A | 395pF @ 0V, 1MHz | |||
|
G3S06504H | 3.0800 | |
2030 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 4 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 10A | 181pF @ 0V, 1MHz | |||
|
G3S12010B | 16.0500 | |
1220 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 39A (DC) | 1.7 V @ 5 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | |||
 |
G4S12010PM | 17.6300 | |
6429 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 30 µA @ 1700 V | -55°C ~ 175°C | 33.2A | - | ||||
|
G5S06506HT | 4.8300 | |
1799 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 6 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 18.5A | 395pF @ 0V, 1MHz | |||
|
G3S06560B | 37.5400 | |
2593 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 95A (DC) | 1.7 V @ 30 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | |||
 |
G3S06510C | 5.3000 | |
2289 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 34A | 690pF @ 0V, 1MHz | |||
|
G5S06510QT | 6.1800 | |
2141 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | 4-PowerTSFN | SiC (Silicon Carbide) Schottky | 4-DFN (8x8) | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.5 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 53A | 645pF @ 0V, 1MHz | |||
|
G3S06520B | 12.7000 | |
5244 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247AB | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 40A | 690pF @ 0V, 1MHz | |||
|
G3S12010C | 10.8200 | |
8007 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 33.2A | 765pF @ 0V, 1MHz | |||
|
G3S12010M | 15.1400 | |
7383 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 23.5A | 765pF @ 0V, 1MHz | |||
|
G5S06504HT | 3.6600 | |
3453 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 Full Pack | SiC (Silicon Carbide) Schottky | TO-220F | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.6 V @ 4 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 9.7A | 181pF @ 0V, 1MHz | |||
|
G3S06550P | 37.4900 | |
7840 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 50 A | 0 ns | 100 µA @ 650 V | -55°C ~ 175°C | 105A | 4400pF @ 0V, 1MHz | |||
|
G3S17010A | 33.3600 | |
3150 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1700 V | 1.7 V @ 10 A | 0 ns | 100 µA @ 1700 V | -55°C ~ 175°C | 24A | 1500pF @ 0V, 1MHz | |||
|
GAS06520A | 11.1000 | |
9864 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220AC | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 20 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 66A | 1390pF @ 0V, 1MHz | |||
|
G3S12002C | 3.8200 | |
5093 | 0.00000000 | Global Power Technology-GPT | - | Cut Tape (CT) | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252 | download | 1 (Unlimited) | REACH info available upon request | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.7 V @ 2 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 8.8A | 170pF @ 0V, 1MHz |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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