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Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Package / Case | Technology | Supplier Device Package | DataSheet | RoHS Status | REACH Status | Other Names | Standard Package | Speed | Voltage - DC Reverse (Vr) (Max) | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) |
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P3D06010T2 | 4.1600 | ![]() |
7698 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06010T2 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 44 µA @ 650 V | -55°C ~ 175°C | 30A | |
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P3D06002E2 | 0.9100 | ![]() |
5306 | 0.00000000 | PN Junction Semiconductor | P3D | Tape & Reel (TR) | Active | TO-252-2 | SiC (Silicon Carbide) Schottky | TO-252-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06002E2TR | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 10 µA @ 650 V | -55°C ~ 175°C | 9A | |
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P3D06006E2 | 2.5000 | ![]() |
4528 | 0.00000000 | PN Junction Semiconductor | P3D | Tape & Reel (TR) | Active | TO-252-2 | SiC (Silicon Carbide) Schottky | TO-252-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06006E2TR | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 30 µA @ 650 V | -55°C ~ 175°C | 18A | |
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P3D12010K2 | 6.5400 | ![]() |
7474 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D12010K2 | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 31A | |
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P3D06016GS | 7.7800 | ![]() |
9820 | 0.00000000 | PN Junction Semiconductor | P3D | Tape & Reel (TR) | Active | TO-263S | SiC (Silicon Carbide) Schottky | TO-263S | download | ROHS3 Compliant | REACH Affected | 4237-P3D06016GSTR | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 45 µA @ 650 V | -55°C ~ 175°C | 40A | |
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P3D06008G2 | 3.3300 | ![]() |
6822 | 0.00000000 | PN Junction Semiconductor | P3D | Tape & Reel (TR) | Active | TO-263-2 | SiC (Silicon Carbide) Schottky | TO-263-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06008G2TR | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 36 µA @ 650 V | -55°C ~ 175°C | 26A | |
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P3D12010G2 | 6.5400 | ![]() |
7423 | 0.00000000 | PN Junction Semiconductor | P3D | Tape & Reel (TR) | Active | TO-263-2 | SiC (Silicon Carbide) Schottky | TO-263-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D12010G2TR | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 33A | |
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P3D12015K2 | 10.8700 | ![]() |
8920 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D12015K2 | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 40A | |
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P3D06010I2 | 4.1600 | ![]() |
8136 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-220I-2 | SiC (Silicon Carbide) Schottky | TO-220I-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06010I2 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 44 µA @ 650 V | -55°C ~ 175°C | 26A | |
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P3D06008T2 | 3.3300 | ![]() |
7218 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06008T2 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 36 µA @ 650 V | -55°C ~ 175°C | 26A | |
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P3D12010T2 | 6.5400 | ![]() |
6876 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D12010T2 | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 31A | |
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P3D12040K2 | 18.7200 | ![]() |
1468 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D12040K2 | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 70 µA @ 650 V | -55°C ~ 175°C | 93A | |
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P3D12030K3 | 14.9200 | ![]() |
9128 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247-3 | download | ROHS3 Compliant | REACH Affected | 4237-P3D12030K3 | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 94A | |
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P3D06020K3 | 8.8400 | ![]() |
2386 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247-3 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06020K3 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 44 µA @ 650 V | -55°C ~ 175°C | 82A | |
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P3D12005T2 | 4.5000 | ![]() |
9356 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D12005T2 | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 44 µA @ 650 V | -55°C ~ 175°C | 21A | |
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P3D12015T2 | 10.8700 | ![]() |
3041 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D12015T2 | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 34A | |
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P3D12040K3 | 18.7200 | ![]() |
4655 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247-3 | download | ROHS3 Compliant | REACH Affected | 4237-P3D12040K3 | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 60 µA @ 650 V | -55°C ~ 175°C | 92A | |
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P3D06016K3 | 7.7800 | ![]() |
2736 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247-3 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06016K3 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 36 µA @ 650 V | -55°C ~ 175°C | 64A |
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