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Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Mounting Type | Package / Case | Base Product Number | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Speed | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F |
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V3N103-M3/I | 0.4900 | 14 | 0.00000000 | Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101, TMBS® | Tape & Reel (TR) | Active | Surface Mount, Wettable Flank | 2-VDFN | V3N103 | Schottky | DFN3820A | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 14,000 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | 660 mV @ 3 A | 200 µA @ 100 V | -40°C ~ 150°C | 1.8A | 410pF @ 4V, 1MHz | |||||||
V3NM63HM3/I | 0.5400 | 14 | 0.00000000 | Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101, TMBS® | Tape & Reel (TR) | Active | Surface Mount, Wettable Flank | 2-VDFN | V3NM63 | Schottky | DFN3820A | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 14,000 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 630 mV @ 3 A | 10 µA @ 60 V | -40°C ~ 175°C | 2.2A | 560pF @ 4V, 1MHz | |||||||
VSSAF5M63-M3/H | 0.5300 | 4599 | 0.00000000 | Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101, TMBS® | Cut Tape (CT) | Active | Surface Mount | DO-221AC, SMA Flat Leads | VSSAF5M63 | Schottky | DO-221AC (SlimSMA) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 3,500 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 660 mV @ 5 A | 10 µA @ 60 V | -40°C ~ 175°C | 2.6A | 700pF @ 4V, 1MHz | |||||||
VSSAF3M63HM3/H | 0.4900 | 7839 | 0.00000000 | Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101, TMBS® | Cut Tape (CT) | Active | Surface Mount | DO-221AC, SMA Flat Leads | VSSAF3M63 | Schottky | DO-221AC (SlimSMA) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 3,500 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 620 mV @ 3 A | 5 µA @ 60 V | -40°C ~ 175°C | 2.6A | 575pF @ 4V, 1MHz | |||||||
VSSAF3M63-M3/H | 0.4800 | 3231 | 0.00000000 | Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101, TMBS® | Cut Tape (CT) | Active | Surface Mount | DO-221AC, SMA Flat Leads | VSSAF3M63 | Schottky | DO-221AC (SlimSMA) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 3,500 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 620 mV @ 3 A | 5 µA @ 60 V | -40°C ~ 175°C | 2.6A | 575pF @ 4V, 1MHz | |||||||
V12PL63HM3/H | 0.8500 | 3 | 0.00000000 | Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Cut Tape (CT) | Active | Surface Mount | TO-277, 3-PowerDFN | V12PL63 | Schottky | TO-277A (SMPC) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 1,500 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 580 mV @ 12 A | 450 µA @ 60 V | -40°C ~ 150°C | 12A | 2600pF @ 4V, 1MHz | |||||||
V3NM153HM3/H | 0.4200 | 3011 | 0.00000000 | Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101, TMBS® | Bulk | Active | Surface Mount, Wettable Flank | 2-VDFN | V3NM153 | Schottky | DFN3820A | download | ROHS3 Compliant | REACH Unaffected | 112-V3NM153HM3/H | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 150 V | 970 mV @ 3 A | 35 µA @ 150 V | -40°C ~ 175°C | 1.8A | 160pF @ 4V, 1MHz | |||||||
V15PL63-M3/I | 0.8500 | 4266 | 0.00000000 | Vishay General Semiconductor - Diodes Division | - | Cut Tape (CT) | Active | Surface Mount | TO-277, 3-PowerDFN | V15PL63 | Schottky | TO-277A (SMPC) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 6,500 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 580 mV @ 15 A | 500 µA @ 60 V | -40°C ~ 150°C | 15A | 3000pF @ 4V, 1MHz | |||||||
V15PL63HM3/H | 0.9000 | 6332 | 0.00000000 | Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Cut Tape (CT) | Active | Surface Mount | TO-277, 3-PowerDFN | V15PL63 | Schottky | TO-277A (SMPC) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 1,500 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 580 mV @ 15 A | 500 µA @ 60 V | -40°C ~ 150°C | 15A | 3000pF @ 4V, 1MHz | |||||||
V15PL63-M3/H | 0.8500 | 2630 | 0.00000000 | Vishay General Semiconductor - Diodes Division | - | Cut Tape (CT) | Active | Surface Mount | TO-277, 3-PowerDFN | V15PL63 | Schottky | TO-277A (SMPC) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 1,500 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 580 mV @ 15 A | 500 µA @ 60 V | -40°C ~ 150°C | 15A | 3000pF @ 4V, 1MHz | |||||||
S8PK-M3/I | 0.2175 | 4395 | 0.00000000 | Vishay General Semiconductor - Diodes Division | - | Tape & Reel (TR) | Active | Surface Mount | TO-277, 3-PowerDFN | S8PK | Standard | TO-277A (SMPC) | download | ROHS3 Compliant | REACH Unaffected | 112-S8PK-M3/ITR | 6,000 | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | 1.1 V @ 8 A | 5 µs | 5 µA @ 800 V | -55°C ~ 150°C | 2A | 60pF @ 4V, 1MHz | ||||||
V20PL63HM3/H | 1.0900 | 6616 | 0.00000000 | Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101 | Cut Tape (CT) | Active | Surface Mount | TO-277, 3-PowerDFN | V20PL63 | Schottky | TO-277A (SMPC) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 1,500 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 640 mV @ 20 A | 600 µA @ 60 V | -40°C ~ 150°C | 20A | 3400pF @ 4V, 1MHz | |||||||
S8PK-M3/H | 0.2187 | 3580 | 0.00000000 | Vishay General Semiconductor - Diodes Division | - | Tape & Reel (TR) | Active | Surface Mount | TO-277, 3-PowerDFN | S8PK | Standard | TO-277A (SMPC) | download | ROHS3 Compliant | REACH Unaffected | 112-S8PK-M3/HTR | 1,500 | Fast Recovery =< 500ns, > 200mA (Io) | 800 V | 1.1 V @ 8 A | 5 µs | 5 µA @ 800 V | -55°C ~ 150°C | 2A | 60pF @ 4V, 1MHz | ||||||
S8PJ-M3/I | 0.2175 | 6536 | 0.00000000 | Vishay General Semiconductor - Diodes Division | - | Tape & Reel (TR) | Active | Surface Mount | TO-277, 3-PowerDFN | S8PJ | Standard | TO-277A (SMPC) | download | ROHS3 Compliant | REACH Unaffected | 112-S8PJ-M3/ITR | 6,000 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 1.1 V @ 8 A | 5 µs | 5 µA @ 600 V | -55°C ~ 150°C | 2A | 60pF @ 4V, 1MHz | ||||||
S8PJ-M3/H | 0.2187 | 9089 | 0.00000000 | Vishay General Semiconductor - Diodes Division | - | Tape & Reel (TR) | Active | Surface Mount | TO-277, 3-PowerDFN | S8PJ | Standard | TO-277A (SMPC) | download | ROHS3 Compliant | REACH Unaffected | 112-S8PJ-M3/HTR | 1,500 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 1.1 V @ 8 A | 5 µs | 5 µA @ 600 V | -55°C ~ 150°C | 2A | 60pF @ 4V, 1MHz | ||||||
V20PL63-M3/I | 0.8800 | 2621 | 0.00000000 | Vishay General Semiconductor - Diodes Division | - | Cut Tape (CT) | Active | Surface Mount | TO-277, 3-PowerDFN | V20PL63 | Schottky | TO-277A (SMPC) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 6,500 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 640 mV @ 20 A | 600 µA @ 60 V | -40°C ~ 150°C | 20A | 3400pF @ 4V, 1MHz | |||||||
V2PL63L-M3/H | 0.4200 | 15 | 0.00000000 | Vishay General Semiconductor - Diodes Division | Automotive, AEC-Q101, TMBS® | Cut Tape (CT) | Active | Surface Mount | DO-220AA | V2PL63 | Schottky | DO-220AA (SMP) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 580 mV @ 2 A | 50 µA @ 60 V | -40°C ~ 150°C | 2A | 360pF @ 4V, 1MHz | |||||||
DSS210U | 0.2600 | 15 | 0.00000000 | SMC Diode Solutions | - | Tape & Reel (TR) | Active | Surface Mount | SOD-123F | Schottky | SOD-123FL | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 100 V | 850 mV @ 2 A | 500 µA @ 100 V | -55°C ~ 150°C | 2A | 40pF @ 4V, 1MHz | ||||||||
DSS220U | 0.3300 | 8708 | 0.00000000 | SMC Diode Solutions | - | Tape & Reel (TR) | Active | Surface Mount | SOD-123F | Schottky | SOD-123FL | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | 900 mV @ 2 A | 50 µA @ 200 V | -55°C ~ 150°C | 2A | 50pF @ 4V, 1MHz | ||||||||
S1G | 0.3500 | 8407 | 0.00000000 | YAGEO | - | Tape & Reel (TR) | Active | download | ROHS3 Compliant | 1 (Unlimited) | 5,000 | ||||||||||||||||||||
S1D | 0.3400 | 9676 | 0.00000000 | YAGEO | - | Tape & Reel (TR) | Active | download | ROHS3 Compliant | 1 (Unlimited) | 5,000 | ||||||||||||||||||||
ES1J | 0.3500 | 1945 | 0.00000000 | YAGEO | - | Tape & Reel (TR) | Active | download | ROHS3 Compliant | 1 (Unlimited) | 5,000 | ||||||||||||||||||||
S1A | 0.3400 | 3944 | 0.00000000 | YAGEO | - | Tape & Reel (TR) | Active | download | ROHS3 Compliant | 1 (Unlimited) | 5,000 | ||||||||||||||||||||
BAV116W | 0.3100 | 8402 | 0.00000000 | YAGEO | - | Tape & Reel (TR) | Active | Surface Mount | SOD-123F | Standard | SOD-123 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 110 V | 1.25 V @ 150 mA | 3 µs | 5 nA @ 75 V | -55°C ~ 150°C | 215mA | 5pF @ 0V, 1MHz | ||||||
S1B | 0.3500 | 6631 | 0.00000000 | YAGEO | - | Tape & Reel (TR) | Active | download | ROHS3 Compliant | 1 (Unlimited) | 5,000 | ||||||||||||||||||||
TRS4E65H,S1Q | 1.8500 | 400 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2L | - | ROHS3 Compliant | 1 (Unlimited) | 264-TRS4E65H,S1Q | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.35 V @ 4 A | 0 ns | 55 µA @ 650 V | 175°C | 4A | 263pF @ 1V, 1MHz | |||||
TRS4V65H,LQ | 1.8500 | 5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 4-VSFN Exposed Pad | SiC (Silicon Carbide) Schottky | 4-DFN-EP (8x8) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 2,500 | No Recovery Time > 500mA (Io) | 650 V | 1.34 V @ 4 A | 0 ns | 55 µA @ 650 V | 175°C | 4A | 263pF @ 1V, 1MHz | ||||||
TRS8V65H,LQ | 2.7700 | 5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 4-VSFN Exposed Pad | SiC (Silicon Carbide) Schottky | 4-DFN-EP (8x8) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 2,500 | No Recovery Time > 500mA (Io) | 650 V | 1.35 V @ 8 A | 0 ns | 90 µA @ 650 V | 175°C | 8A | 520pF @ 1V, 1MHz | ||||||
TRS2E65H,S1Q | 1.5500 | 300 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2L | - | ROHS3 Compliant | 1 (Unlimited) | 264-TRS2E65H,S1Q | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.35 V @ 2 A | 0 ns | 40 µA @ 650 V | 175°C | 2A | 135pF @ 1V, 1MHz | |||||
TRS6V65H,LQ | 2.3200 | 5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 4-VSFN Exposed Pad | SiC (Silicon Carbide) Schottky | 4-DFN-EP (8x8) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 2,500 | No Recovery Time > 500mA (Io) | 650 V | 1.35 V @ 6 A | 0 ns | 70 µA @ 650 V | 175°C | 6A | 392pF @ 1V, 1MHz |
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